6 inch 4H SEMI Nau'in SiC mai haɗawa da kauri 500μm TTV≤5μm MOS grade

6 inch 4H SEMI Nau'in SiC mai haɗawa da kauri 500μm TTV≤5μm Matsayin MOS Featured Hoto

Takaitaccen Bayani:

Tare da saurin ci gaba na sadarwar 5G da fasahar radar, 6-inch Semi-insulating SiC composite substrate ya zama babban abu don kera na'urori masu yawa. Idan aka kwatanta da na'urori na GaAs na al'ada, wannan ma'auni yana kula da tsayin daka (> 10⁸ Ω · cm) yayin da yake inganta yanayin zafi fiye da 5x, yana magance ƙalubalen zubar da zafi a cikin na'urori masu raƙuman ruwa na millimeter. Ana iya gina na'urorin haɓaka wutar lantarki a cikin na'urorin yau da kullun kamar wayoyin hannu na 5G da tashoshi na sadarwar tauraron dan adam akan wannan kayan aikin. Yin amfani da fasahar mu ta “makullin doping diyya” na mallakar mallakarmu, mun rage ƙarancin micropipe zuwa ƙasa da 0.5/cm² kuma mun sami asarar ƙarancin microwave na 0.05 dB/mm.

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Tags samfurin

Siffofin fasaha

Abubuwa	Ƙayyadaddun bayanai	Abubuwa	Ƙayyadaddun bayanai
Diamita	150± 0.2 mm	Gaba (Si-face) rashin ƙarfi	Ra≤0.2 nm (5μm×5μm)
Polytype	4H	Gefen Chip, Scratch, Crack (duba gani)	Babu
Resistivity	≥1E8 Ω·cm	TTV	≤5m ku
Canja wurin kauri	≥0.4m	Warp	≤35 μm
Babu (2mm>D>0.5mm)	≤5 ea/Wafer	Kauri	500± 25 μm

Mabuɗin Siffofin

1. Kyawawan Ayyuka Mai Girma
6-inch Semi-insulating SiC composite substrate yana amfani da ƙirar ƙirar dielectric mai daraja, yana tabbatar da bambancin dielectric akai-akai na <2% a cikin Ka-band (26.5-40 GHz) da haɓaka daidaiton lokaci ta 40%. 15% karuwa a cikin inganci da 20% ƙananan amfani da wutar lantarki a cikin kayan aikin T / R ta amfani da wannan substrate.

2. Ci gaba Thermal Management
Tsarin hadaddiyar “gadar thermal” na musamman yana ba da damar tafiyar da yanayin zafi na gefe na 400 W/m·K. A cikin 28 GHz 5G base station PA modules, the junction zafin jiki yana tashi da 28°C kawai bayan sa'o'i 24 na ci gaba da aiki-50°C ƙasa da mafita na al'ada.

3. Mafi kyawun Wafer
Ta hanyar ingantacciyar hanyar Sufuri ta Jiki (PVT), muna samun rarrabuwar kawuna <500/cm² da Jumlar Kauri Bambancin (TTV) <3 μm.
4. Ƙirƙira-Samun Gudanarwa
Tsarin cirewar laser ɗin mu na musamman wanda aka haɓaka don 6-inch Semi-insulating SiC composite substrate yana rage girman yanayin ƙasa ta umarni biyu na girma kafin epitaxy.

Babban Aikace-aikace

1. 5G Base Station Core Components
A cikin manyan tsararrun eriya na MIMO, na'urorin GaN HEMT akan 6-inch Semi-insulating SiC composite substrates sun sami ikon fitarwa na 200W da kuma> 65% inganci. Gwajin filin a 3.5 GHz ya nuna haɓakar 30% na radiyon ɗaukar hoto.

2. Tsarin Sadarwar Tauraron Dan Adam
Ƙarƙashin Ƙasa (LEO) tauraron dan adam transceivers amfani da wannan substrate yana nuna 8 dB mafi girma EIRP a cikin Q-band (40 GHz) yayin da rage nauyi da 40%. SpaceX Starlink tashoshi sun karbe shi don samarwa da yawa.

3. Tsarin Radar Soja
Tsarin radar T/R da aka tsara akan wannan ma'aunin yana samun bandwidth na 6-18 GHz da adadi mai ƙaranci kamar ƙasan 1.2 dB, yana haɓaka kewayon ganowa ta 50km a cikin tsarin radar gargadin farko.

4. Motar Millimeter-Wave Radar
79 GHz kwakwalwan radar mota ta amfani da wannan kayan aiki suna haɓaka ƙudurin kusurwa zuwa 0.5°, suna saduwa da buƙatun tuƙi na L4.

Muna ba da cikakkiyar bayani na sabis na musamman don 6-inch Semi-insulating SiC composite substrates. Dangane da keɓance sigogin abu, muna goyan bayan ƙayyadaddun ƙa'ida ta resistivity tsakanin kewayon 10⁶-10¹⁰ Ω·cm. Musamman don aikace-aikacen soja, za mu iya ba da zaɓin juriya mai ƙarfi na> 10⁹ Ω·cm. Yana ba da ƙayyadaddun kauri guda uku na 200μm, 350μm da 500μm a lokaci guda, tare da juriya mai ƙarfi a cikin ± 10μm, saduwa da buƙatu daban-daban daga na'urori masu ƙarfi zuwa manyan aikace-aikacen iko.

A cikin sharuddan surface jiyya matakai, muna bayar da biyu sana'a mafita: Chemical Mechanical Polishing (CMP) iya cimma atomic-matakin surface flatness da Ra <0.15nm, saduwa da mafi wuya epitaxial girma bukatun; The epitaxial shirye surface jiyya fasahar ga m samar buƙatun iya samar da matsananci-m saman tare da Sq <0.3nm da saura oxide kauri <1nm, muhimmanci sauƙaƙa da pretreatment tsari a abokin ciniki ta karshen.

XKH yana ba da cikakkiyar mafita na musamman don 6-inch Semi-insulating SiC composite substrates

1. Material Parameter Customization
Muna ba da daidaitattun daidaitawar juriya tsakanin kewayon 10⁶-10¹⁰ Ω·cm, tare da zaɓuɓɓukan juriya na musamman>10⁹ Ω·cm don aikace-aikacen soja/aerospace.

2. Ƙimar Kauri
Madaidaitan zaɓuɓɓukan kauri guda uku:

200μm (an inganta don na'urori masu girma)

350μm (misali ƙayyadaddun bayanai)

500μm (tsara don aikace-aikacen manyan ƙarfi)
Duk bambance-bambancen suna kula da jurewar kauri na ± 10μm.

3. Fannin Jiyya Fasaha

Kemikal Mechanical Polishing (CMP): Yana samun kwanciyar hankali matakin atomic tare da Ra <0.15nm, saduwa da stringent ci gaban ci gaban RF da na'urorin wuta.

4. Epi-Ready Surface Processing

Yana isar da filaye masu santsi tare da ƙarancin Sq<0.3nm

· Yana sarrafa kauri na oxide zuwa <1nm

· Yana kawar da matakan aiwatarwa har guda 3 a wuraren abokin ciniki