6 a cikin Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
Kayayyaki
1. Halin Jiki da Tsari
● Nau'in Abu: Silicon Carbide (SiC)
●Polytype: 4H-SiC, tsarin crystal hexagonal
●Diamita: 6 inci (150 mm)
●Kauri: Configurable (5-15 mm al'ada ga dummy grade)
●Crystal fuskantarwa:
oFiramare: [0001] (C-jirgin sama)
Zaɓuɓɓukan sakandare: Kashe-axis 4° don ingantaccen haɓakar epitaxial
● Fitowa na Farko: (10-10) ± 5°
●Matsakaicin Fitowa na biyu: 90° counterclockwise daga firamare ± 5°
2. Kayan Wutar Lantarki
● Juriya:
oSemi-insulating (> 106 ^ 66 Ω·cm), manufa don rage ƙarfin ƙarfin parasitic.
●Nau'in Doping:
Doped ba da gangan ba, yana haifar da babban juriya na lantarki da kwanciyar hankali ƙarƙashin kewayon yanayin aiki.
3. Thermal Properties
● Ƙwararrun Ƙwararrun Ƙwararru: 3.5-4.9 W / cm · K, yana ba da damar watsar da zafi mai tasiri a cikin tsarin wutar lantarki.
● Ƙimar Ƙarfafa Ƙwararru: 4.2 × 10−64.2 \ sau 10 ^ {-6} 4.2 × 10−6 / K, yana tabbatar da kwanciyar hankali a lokacin aiki mai zafi.
4. Kayayyakin gani
●Bandgap: Wide bandgap na 3.26 eV, kyale aiki a karkashin high voltages da yanayin zafi.
●Transparency: Babban nuna gaskiya ga UV da tsayin daka na iya gani, da amfani ga gwajin optoelectronic.
5. Kayayyakin Injini
● Hardness: Mohs sikelin 9, na biyu kawai zuwa lu'u-lu'u, tabbatar da dorewa yayin aiki.
● Rashin Yawa:
Ana sarrafa shi don ƙarancin lahani na macro, yana tabbatar da isassun inganci don aikace-aikacen da ba su da daraja.
●Lalata: Daidaituwa tare da karkacewa
Siga | Cikakkun bayanai | Naúrar |
Daraja | Dummy Grade | |
Diamita | 150.0 ± 0.5 | mm |
Wafer Orientation | Kan-axis: <0001> ± 0.5° | digiri |
Juriya na Lantarki | > 1E5 | Ω · cm |
Hannun Filayen Firamare | {10-10} ± 5.0° | digiri |
Tsawon Fitowa na Farko | Daraja | |
Cracks (Binciken Haske mai Girma) | <3 mm a cikin radial | mm |
Hex Plates (Binciken Haske mai Girma) | Tarin yanki ≤ 5% | % |
Yankunan Polytype (Binciken Haske mai Girma) | Tarin yanki ≤ 10% | % |
Maƙarƙashiya Maɗaukaki | <50 | cm-2^-2-2 |
Chipping Edge | 3 an yarda, kowane ≤ 3 mm | mm |
Lura | Slicing wafer kauri <1 mm,> 70% (ban da iyakar biyu) ya cika buƙatun da ke sama |
Aikace-aikace
1. Samfura da Bincike
Dummy-grade 6-inch 4H-SiC ingot shine ingantaccen abu don samfuri da bincike, yana bawa masana'anta da dakunan gwaje-gwaje damar:
●Tsarin gwaje-gwaje na tsari a cikin Jigilar Ruwan Ruwa na Chemical (CVD) ko Tsarin Tushen Jiki (PVD).
● Ƙirƙira da kuma tace etching, goge, da dabarun slicing.
●Bincika sabbin ƙirar na'ura kafin canzawa zuwa kayan samarwa-sa.
2. Gyaran Na'urar da Gwaji
Kaddarorin Semi-insulating sun sanya wannan ingot mai kima ga:
●Yi kimantawa da daidaita kayan lantarki na na'urori masu ƙarfi da haɓakawa.
● Yin kwaikwayon yanayin aiki don MOSFETs, IGBTs, ko diodes a cikin mahallin gwaji.
●Yin aiki azaman mai amfani mai tsada don maye gurbin tsaftataccen tsafta yayin haɓaka matakin farko.
3. Wutar Lantarki
Babban halayen thermal da faffadan halayen bandgap na 4H-SiC suna ba da damar ingantaccen aiki a cikin na'urorin lantarki, gami da:
●Maɗaukakin wutar lantarki mai ƙarfi.
●Mashinan lantarki (EV) inverters.
●Tsarin makamashi mai sabuntawa, irin su inverters na hasken rana da injin turbin iska.
4. Aikace-aikacen Mitar Rediyo (RF).
4H-SiC's ƙananan asarar dielectric da babban motsi na lantarki sun sa ya dace da:
● RF amplifiers da transistor a cikin hanyoyin sadarwa.
● Tsarin radar mai girma don sararin samaniya da aikace-aikacen tsaro.
● Abubuwan haɗin sadarwar mara waya don fasahar 5G masu tasowa.
5. Radiation-Resistant Devices
Saboda juriya na asali ga lahani da ke haifar da radiation, Semi-insulating 4H-SiC ya dace don:
● Kayan aikin binciken sararin samaniya, ciki har da na'urorin lantarki na tauraron dan adam da tsarin wutar lantarki.
●Radiation-hardened electronics for nuclear monitoring and control.
● Aikace-aikacen tsaro da ke buƙatar ƙarfi a cikin matsanancin yanayi.
6. Optoelectronics
Bayyanar gani da faffadan bandgap na 4H-SiC yana ba da damar amfani da shi a:
●UV photodetectors da high-power LEDs.
● Gwaji na gani kayan shafa da saman jiyya.
● Samar da kayan aikin gani don na'urori masu auna firikwensin ci gaba.
Fa'idodin Kayan Dummy-Grade
Ƙarfin Kuɗi:
Makin daɗaɗɗen ƙima shine mafi arha madadin bincike ko kayan ƙira, yana mai da shi manufa don gwaji na yau da kullun da gyaran tsari.
Daidaitawa:
Ƙimar da za a iya daidaitawa da kuma daidaitawar kristal suna tabbatar da dacewa tare da kewayon aikace-aikace.
Ƙarfafawa:
Diamita na inci 6 ya yi daidai da ka'idodin masana'antu, yana ba da damar ƙwanƙwasa ƙima zuwa matakan samarwa.
Karfi:
Ƙarfin injina da kwanciyar hankali na zafi suna sa ingot ɗin ya dawwama kuma abin dogaro a ƙarƙashin yanayin gwaji iri-iri.
Yawanci:
Ya dace da masana'antu da yawa, daga tsarin makamashi zuwa sadarwa da optoelectronics.
Kammalawa
Silicon Carbide mai inci 6-inch (4H-SiC) ingot mai insulating, matakin dummy, yana ba da ingantaccen dandali mai dacewa don bincike, samfuri, da gwaji a cikin sassan fasaha na yanke. Its na kwarai thermal, lantarki, da inji, haɗe tare da araha da customizability, sanya shi wani makawa abu ga duka biyu ilimi da kuma masana'antu. Daga na'urorin lantarki zuwa tsarin RF da na'urori masu taurin radiyo, wannan ingot yana goyan bayan ƙirƙira a kowane mataki na ci gaba.
Don ƙarin cikakkun bayanai ko don neman zance, da fatan za a tuntuɓe mu kai tsaye. Ƙungiyarmu ta fasaha a shirye take don taimakawa tare da ƙera mafita don biyan bukatun ku.