Wafer ɗin SiC Epi mai inci 4 don MOS ko SBD

Epitaxy yana nufin girman wani Layer na kayan lu'ulu'u guda ɗaya mai inganci a saman wani silicon carbide substrate. Daga cikinsu, girman gallium nitride epitaxial Layer akan wani semi-insulating silicon carbide substrate ana kiransa heterogeneous epitaxy; girman wani silicon carbide epitaxial Layer akan saman wani conductive silicon carbide substrate ana kiransa homogeneous epitaxy.

Epitaxial ya yi daidai da buƙatun ƙirar na'urar don girma na babban aikin Layer, wanda galibi yana ƙayyade aikin guntu da na'urar, farashin 23%. Manyan hanyoyin SiC thin film epitaxy a wannan matakin sun haɗa da: sinadaran tururi deposition (CVD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), da pulsed laser deposition and sublimation (PLD).

Epitaxy wata muhimmiyar hanya ce ta haɗi a duk faɗin masana'antar. Ta hanyar haɓaka yadudduka na GaN epitaxial akan substrates na silicon carbide na semi-insulating, ana samar da wafers na GaN epitaxial waɗanda aka gina akan silicon carbide, waɗanda za a iya ƙara yin su zuwa na'urorin GaN RF kamar su transistor masu motsi na lantarki (HEMTs);

Ta hanyar haɓaka layin epitaxial na silicon carbide akan substrate mai sarrafawa don samun wafer ɗin epitaxial na silicon carbide, kuma a cikin layin epitaxial akan kera diodes na Schottky, transistors na rabin-filin sakamako na zinare-oxygen, transistors na gate bipolar da sauran na'urorin wutar lantarki, don haka ingancin epitaxial akan aikin na'urar yana da babban tasiri ga ci gaban masana'antar kuma yana taka muhimmiyar rawa.