4inch SiC Epi wafer don MOS ko SBD

Epitaxy yana nufin haɓakar Layer na mafi girman ingancin kayan kristal guda ɗaya akan saman silin carbide substrate. Daga cikin su, haɓakar gallium nitride epitaxial Layer a kan silin-carbide substrate-insulating na silicon carbide ana kiransa epitaxy iri-iri; girma da siliki carbide epitaxial Layer a saman wani conductive silicon carbide substrate ana kiransa kama epitaxy.

Epitaxial ya dace da buƙatun ƙirar na'urar na haɓaka babban aikin aikin, galibi yana ƙayyade aikin guntu da na'urar, farashin 23%. Babban hanyoyin SiC bakin ciki film epitaxy a wannan mataki sun hada da: sinadaran tururi jijiya (CVD), kwayoyin katako epitaxy (MBE), ruwa lokaci epitaxy (LPE), da pulsed Laser deposition da sublimation (PLD).

Epitaxy hanya ce mai matukar mahimmanci a cikin masana'antar gaba ɗaya. Ta hanyar girma GaN epitaxial yadudduka a kan siliki-carbide substrates, GaN epitaxial wafers dangane da silicon carbide ana samar da su, waɗanda za a iya ƙara yin su cikin na'urorin GaN RF kamar manyan transistor motsi na lantarki (HEMTs);

By girma silicon carbide epitaxial Layer a kan conductive substrate don samun silicon carbide epitaxial wafer, kuma a cikin epitaxial Layer a kan yi na Schottky diodes, zinariya-oxygen rabin filin sakamako transistor, insulated kofa bipolar transistors da sauran ikon na'urorin, don haka ingancin epitaxial a kan wasan kwaikwayon na na'urar ne sosai babban tasiri a kan ci gaban da na'urar taka muhimmiyar rawa a cikin ci gaban da na'urar.