4inch Semi-zagi SiC wafers HPSI SiC substrate Prime Production daraja

4inch Semi-cin mutuncin SiC wafers HPSI SiC substrate Prime Production grade Featured Image

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4-inch high-tsafta Semi-insulated silicon carbide biyu-gefe polishing farantin ne yafi amfani a 5G sadarwa da kuma sauran filayen, tare da abũbuwan amfãni na inganta mitar rediyo, matsananci-tsawon nesa fitarwa, anti-tsama, high-gudun, babban-ikon watsa bayanai da sauran aikace-aikace, kuma ana daukarsa a matsayin manufa substrate don yin microwave ikon na'urorin.

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Silicon carbide (SiC) wani abu ne mai haɗaɗɗiyar fili wanda ya haɗa da abubuwan carbon da silicon, kuma yana ɗaya daga cikin abubuwan da suka dace don yin babban zafin jiki, mai ƙarfi, ƙarfin ƙarfi da na'urori masu ƙarfi. Idan aka kwatanta da kayan siliki na al'ada (Si), haramtaccen bandeji na siliki carbide ya ninka sau uku na silicon; da thermal watsin ne sau 4-5 na silicon; raguwar ƙarfin lantarki shine sau 8-10 na silicon; da electron jikewa drift kudi ne 2-3 sau na silicon, wanda ya gana da bukatun na zamani masana'antu ga high-power, high-voltage, da kuma high-mita, kuma shi ne yafi amfani da su yi high-gudun, high-mita, high-ikon da haske-emitting lantarki aka gyara, kuma ta ƙasa aikace-aikace yankunan sun hada da kaifin baki Grid, New makamashin lantarki da wutar lantarki filin, photovoltaic filin, da dai sauransu. Carbide diodes da MOSFETs an fara amfani da su ta kasuwanci.

Fa'idodin SiC wafers/SiC substrate

High zafin jiki juriya. Haramtaccen bandeji na siliki carbide shine sau 2-3 na silicon, don haka electrons ba su da yuwuwar yin tsalle a yanayin zafi mai girma kuma suna iya jure yanayin yanayin aiki mai girma, kuma yanayin zafin jiki na silicon carbide shine sau 4-5 na silicon, yana sauƙaƙa watsar da zafi daga na'urar kuma yana ba da damar haɓaka zafin aiki mafi girma. Halayen zafin jiki mai girma na iya ƙara yawan ƙarfin wutar lantarki, yayin da rage abubuwan da ake buƙata don tsarin zubar da zafi, yana sa tashar ta fi sauƙi kuma mai sauƙi.

High ƙarfin lantarki juriya. Ƙarfin faɗuwar filin Silicon carbide ya ninka na silicon sau 10, yana ba shi damar jure wa mafi girman ƙarfin lantarki, yana sa ya fi dacewa da na'urori masu ƙarfi.

Juriya mai girma. Silicon carbide yana da sau biyu saturation electron drift rate of silicon, wanda ya haifar da na'urorin sa a cikin tsarin rufewa ba ya wanzu a cikin yanayin ja na yanzu, yana iya inganta mitar na'urar yadda ya kamata, don cimma ƙarancin na'urar.

Ƙananan asarar makamashi. Silicon carbide yana da ƙarancin juriya sosai idan aka kwatanta da kayan siliki, ƙarancin tafiyarwa; a lokaci guda, babban bandwidth na silicon carbide yana rage yawan zubar da ruwa, asarar wutar lantarki; Bugu da kari, silicon carbide na'urorin a cikin tsarin kashewa ba ya wanzu a halin yanzu ja sabon abu, low sauya hasara.