4inch Semi-zagi SiC wafers HPSI SiC substrate Prime Production daraja

4inch Semi-cin mutuncin SiC wafers HPSI SiC substrate Prime Production grade Featured Image

Takaitaccen Bayani:

4-inch high-tsaftataccen siliki-carbide farantin goge mai fuska biyu ana amfani da shi ne a cikin sadarwar 5G da sauran fagage, tare da fa'idodin haɓaka kewayon mitar rediyo, ƙwarewar nesa mai tsayi, tsangwama, babban sauri. , watsa bayanai mai girma da sauran aikace-aikace, kuma ana ɗaukarsa a matsayin madaidaicin madaidaicin na'urorin wutar lantarki.

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Silicon carbide (SiC) wani abu ne mai haɗaɗɗiyar fili wanda ya haɗa da abubuwan carbon da silicon, kuma yana ɗaya daga cikin abubuwan da suka dace don yin babban zafin jiki, mai ƙarfi, ƙarfin ƙarfi da na'urori masu ƙarfi. Idan aka kwatanta da kayan siliki na al'ada (Si), haramtaccen bandeji na siliki carbide ya ninka sau uku na silicon; da thermal watsin ne sau 4-5 na silicon; raguwar ƙarfin lantarki shine sau 8-10 na silicon; kuma adadin zazzagewar wutar lantarki ya ninka sau 2-3 na silicon, wanda ke biyan buƙatun masana'antar zamani don ƙarfin ƙarfi, ƙarfin lantarki, da mitoci mai ƙarfi, kuma galibi ana amfani dashi don yin babban sauri, mai girma. mita, babban iko da haske mai fitar da kayan lantarki, da wuraren aikace-aikacensa na ƙasa sun haɗa da grid mai hankali, Sabbin motocin makamashi, wutar lantarki ta photovoltaic, sadarwar 5G, da sauransu. A fagen na'urorin lantarki, silicon carbide diodes da MOSFETs sun fara zama a yi amfani da kasuwanci.

Fa'idodin SiC wafers/SiC substrate

High zafin jiki juriya. Nisa da aka haramta na siliki carbide shine sau 2-3 na silicon, don haka electrons ba su da yuwuwar tsalle a yanayin zafi mai yawa kuma suna iya jure yanayin zafi mai girma, kuma yanayin zafi na silicon carbide shine sau 4-5 na silicon, yin hakan. ya fi sauƙi don watsar da zafi daga na'urar kuma yana ba da damar mafi girman iyakance zafin aiki. Halayen zafin jiki mai girma na iya ƙara yawan ƙarfin wutar lantarki, yayin da rage abubuwan da ake buƙata don tsarin zubar da zafi, yana sa tashar ta fi sauƙi kuma mai sauƙi.

High ƙarfin lantarki juriya. Ƙarfin faɗuwar filin Silicon carbide ya ninka na silicon sau 10, yana ba shi damar jure wa mafi girman ƙarfin lantarki, yana sa ya fi dacewa da na'urori masu ƙarfi.

Juriya mai girma. Silicon carbide yana da sau biyu saturation electron drift rate of silicon, wanda ya haifar da na'urorin sa a cikin tsarin rufewa ba ya wanzu a cikin yanayin ja na yanzu, yana iya inganta mitar na'urar yadda ya kamata, don cimma ƙarancin na'urar.

Ƙananan asarar makamashi. Silicon carbide yana da ƙarancin juriya sosai idan aka kwatanta da kayan siliki, ƙarancin tafiyarwa; a lokaci guda, babban bandwidth na silicon carbide yana rage yawan zubar da ruwa, asarar wutar lantarki; Bugu da kari, silicon carbide na'urorin a cikin tsarin kashewa ba ya wanzu a halin yanzu ja sabon abu, low sauya hasara.