4inch 6inch 8inch SiC Crystal Growth Furnace don Tsarin CVD

Takaitaccen Bayani:

XKH's SiC Crystal Growth Furnace CVD Tsarin Rubutun Rubutun Kemikal yana amfani da fasahar tururi mai jagoranci na duniya, musamman wanda aka ƙera don haɓakar SiC mai inganci mai inganci. Ta hanyar daidaitaccen sarrafa sigogin tsari ciki har da kwararar iskar gas, zafin jiki da matsa lamba, yana ba da damar ci gaban kristal mai sarrafa SiC akan ginshiƙan inch 4-8. Wannan tsarin CVD zai iya samar da nau'ikan kristal SiC daban-daban ciki har da nau'in 4H / 6H-N da nau'in insulating na 4H / 6H-SEMI, yana ba da cikakkiyar mafita daga kayan aiki zuwa matakai. Tsarin yana goyan bayan buƙatun haɓaka don wafers 2-12, yana mai da shi dacewa musamman don yawan samar da wutar lantarki da na'urorin RF.

Aika mana imel

Siffofin

Ƙa'idar Aiki

Babban ka'idar tsarin CVD ɗin mu ya haɗa da bazuwar thermal na silicon-dauke da (misali, SiH4) da carbon-dauke da iskar gas (misali, C3H8) iskar gas a babban yanayin zafi (yawanci 1500-2000 ° C), ajiye SiC guda lu'ulu'u a kan substrates ta hanyar halayen sinadarai na lokaci-lokaci. Wannan fasaha ta dace musamman don samar da tsafta mai tsafta (> 99.9995%) 4H/6H-SiC lu'ulu'u guda ɗaya tare da ƙarancin ƙarancin lahani (<1000/cm²), saduwa da ƙaƙƙarfan buƙatun kayan lantarki da na'urorin RF. Ta hanyar daidaitaccen sarrafa abun da ke ciki na iskar gas, ƙimar kwarara da ƙarancin zafin jiki, tsarin yana ba da damar ingantaccen tsari na nau'in kristal (nau'in N/P) da tsayayya.

Nau'in Tsari da Ma'aunin Fasaha

Nau'in Tsari	Yanayin Zazzabi	Mabuɗin Siffofin	Aikace-aikace
Babban-Temp CVD	1500-2300 ° C	Dumamar shigar da hoto, ±5°C daidaiton zafin jiki	Girman SiC crystal girma
Hot-Filament CVD	800-1400 ° C	Tungsten filament dumama, 10-50μm/h adadin ajiya	SiC lokacin farin ciki epitaxy
VPE CVD	1200-1800 ° C	Multi-zone zafin jiki kula,>80% gas amfani	Mas epi-wafer samarwa
PECVD	400-800 ° C	Plasma ingantacce, 1-10μm/h adadin ajiya	Ƙananan zafin SiC fina-finai na bakin ciki

Mabuɗin Halayen Fasaha

1. Babban Tsarin Kula da Zazzabi
Tanderun yana da tsarin dumama mai juriya da yawa wanda zai iya kiyaye yanayin zafi har zuwa 2300 ° C tare da daidaito ± 1 ° C a duk ɗakin girma. Ana samun wannan madaidaicin kula da thermal ta hanyar:
Yankunan dumama 12 masu zaman kansu.
Saka idanu na thermocouple mai yawa (Nau'in C W-Re).
Algorithms daidaita bayanin martaba na ainihin lokacin.
Ganuwar ɗakin da aka sanyaya ruwa don sarrafa gradient na thermal.

2. Isar Gas da Fasahar Haɗawa
Tsarin rarraba iskar gas ɗin mu yana tabbatar da ingantacciyar haɗaɗɗen maƙasudi da isarwa iri ɗaya:
Masu kula da kwararar taro tare da daidaito ± 0.05sccm.
Multi-point gas allura da yawa.
In-situ gas abun da ke ciki saka idanu (FTIR spectroscopy).
Diyya mai gudana ta atomatik yayin hawan hawan girma.

3. Crystal Quality Haɓaka
Tsarin ya ƙunshi sabbin abubuwa da yawa don haɓaka ingancin crystal:
Juyawa mai jujjuyawa (0-100rpm shirye-shirye).
Fasahar sarrafa madaidaicin iyaka.
Tsarin kula da lahani a cikin wurin (UV Laser watsawa).
Rarraba damuwa ta atomatik yayin girma.

4. Tsarin sarrafawa da sarrafawa
Cikakken aiwatar da girke-girke mai sarrafa kansa.
Haɓaka ma'aunin haɓaka na ainihin lokaci AI.
Saka idanu mai nisa da bincike.
1000+ rajistan bayanan siga (an adana shi tsawon shekaru 5).

5. Safety da Dogara Features
Kariyar yawan zafin jiki sau uku-uku.
Tsarin tsabtace gaggawa ta atomatik.
Ƙirar tsari mai ƙima ta Seismic.
98.5% garantin lokaci.

6. Zauren Gine-gine na Sikeli
Zane na zamani yana ba da damar haɓaka iya aiki.
Mai jituwa tare da girman wafer 100mm zuwa 200mm.
Yana goyan bayan daidaitawa a tsaye da a kwance.
Canje-canje masu sauri don kiyayewa.

7. Amfanin Makamashi
30% ƙananan amfani da wutar lantarki fiye da kwatankwacin tsarin.
Tsarin dawo da zafi yana ɗaukar 60% na sharar gida.
Ingantattun algorithms masu amfani da iskar gas.
Abubuwan buƙatun kayan aikin LEED.

8. Material Versatility
Yana girma duk manyan nau'ikan SiC (4H, 6H, 3C).
Yana goyan bayan bambance-bambancen gudanarwa da kuma Semi-insulating.
Yana ɗaukar shirye-shiryen doping daban-daban (nau'in N, nau'in P).
Mai jituwa tare da madadin mafari (misali, TMS, TES).

9. Aiki na Tsarin Wuta
Tushen matsa lamba: <1×10⁻ Torr
Ƙimar ƙyalli: <1×10⁻ Torr·L/sec
Saurin fitarwa: 5000L/s (na SiH₄)

Ikon matsa lamba ta atomatik yayin hawan hawan girma
Wannan ƙayyadaddun ƙayyadaddun ƙayyadaddun fasaha yana nuna ikon tsarin mu don samar da ƙimar bincike da ƙima na SiC lu'ulu'u tare da daidaiton jagorancin masana'antu da yawan amfanin ƙasa. Haɗuwa da daidaiton sarrafawa, saka idanu na ci gaba, da injiniya mai ƙarfi ya sa wannan tsarin CVD ya zama mafi kyawun zaɓi don R&D da aikace-aikacen masana'anta girma a cikin kayan lantarki, na'urorin RF, da sauran aikace-aikacen semiconductor na ci gaba.

Mabuɗin Amfani

1. High-Quality Crystal Growth
• Lalacewar ƙima kamar ƙasa da <1000/cm² (4H-SiC)
• Daidaitawar Doping <5% (wafers 6-inch)
• Tsabtace Crystal> 99.9995%

2. Ƙarfin Samar da Girman Girma
• Yana goyan bayan haɓakar wafer har zuwa inch 8
• Daidaiton diamita> 99%
• Bambancin kauri <± 2%

3. Madaidaicin Tsarin Gudanarwa
• daidaiton yanayin zafin jiki ±1°C
• daidaiton sarrafa kwararar iskar gas ± 0.1sccm
• daidaiton sarrafa matsi ± 0.1Torr

4. Amfanin Makamashi
• 30% mafi ƙarfin kuzari fiye da hanyoyin al'ada
• Yawan girma har zuwa 50-200μm/h
• Lokacin kayan aiki> 95%

Maɓallin Aikace-aikace

1. Na'urorin Lantarki na Wutar Lantarki
6-inch 4H-SiC substrates don 1200V+ MOSFETs / diodes, rage sauya asarar da 50%.

2. 5G Sadarwa
Semi-insulating SiC substrates (resistivity>10⁸Ω·cm) don tushen tashar PAs, tare da asarar saka <0.3dB a>10GHz.

3. Sabbin Motocin Makamashi
Motocin SiC masu ƙarfin mota suna haɓaka kewayon EV da 5-8% kuma suna rage lokacin caji da 30%.

4. PV Inverters
Ƙananan-launi suna haɓaka ingantaccen juzu'i fiye da 99% yayin da rage girman tsarin da 40%.

Ayyukan XKH

1. Sabis na Musamman
Tsarukan CVD 4-8 inch da aka keɓance.
Yana goyan bayan haɓaka nau'in 4H/6H-N, nau'in insulating 4H/6H-SEMI, da sauransu.

2. Tallafin Fasaha
Cikakken horo akan aiki da ingantawa tsari.
24/7 amsawar fasaha.

3. Turnkey Solutions
Ƙarshe-zuwa-ƙarshen sabis daga shigarwa zuwa aiwatar da tabbatarwa.

4. Kayayyakin Kaya
2-12 inch SiC substrates/epi-wafers akwai.
Yana goyan bayan 4H/6H/3C polytypes.

Maɓallin bambance-bambancen sun haɗa da:
Har zuwa 8-inch ci gaban kristal.
20% saurin girma fiye da matsakaicin masana'antu.
98% amincin tsarin.
Cikakken fakitin tsarin sarrafawa na hankali.