4H-Semi-HPSI 2inch SiC substrate wafer Production Dummy Research grade

An raba sinadarin silicon carbide zuwa nau'in mai sarrafawa da mai rufewa, sinadarin silicon carbide mai sarrafawa zuwa nau'in n galibi ana amfani da shi don LED mai tushen GaN da sauran na'urorin lantarki na optoelectronic, na'urorin lantarki masu amfani da wutar lantarki na SiC, da sauransu, kuma ana amfani da sinadarin silicon carbide mai rufewa da siC silicon musamman don kera na'urorin mitar rediyo masu ƙarfi na GaN. Bugu da ƙari, sinadarin semi-insulation mai ƙarfi na HPSI da SI ya bambanta, yawan sinadarin semi-insulation mai ƙarfi na kewayon 3.5 * 1013 ~ 8 * 1015/cm3, tare da babban motsi na lantarki; sinadarin semi-insulation abu ne mai juriya sosai, juriya yana da yawa, galibi ana amfani da shi don na'urorin microwave, ba mai watsawa ba.

Takardar silinda mai kauri ta SiC wafer mai kauri ta Semi-insulating Silicon Carbide

Tsarin lu'ulu'u na SiC yana ƙayyade yanayinsa na zahiri, dangane da Si da GaAs, SiC yana da shi don halayen jiki; faɗin band da aka haramta babba ne, kusan sau 3 na Si, don tabbatar da cewa na'urar tana aiki a yanayin zafi mai yawa a ƙarƙashin aminci na dogon lokaci; ƙarfin filin lalacewa yana da girma, sau 1O na Si, don tabbatar da cewa ƙarfin ƙarfin na'urar, inganta ƙimar ƙarfin wutar lantarki na na'urar; ƙimar electron mai cikewa babba ne, sau 2 na Si, don ƙara mita da yawan wutar na'urar; ƙarfin wutar lantarki yana da girma, fiye da Si, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma, fiye da Si, ƙarfin wutar lantarki yana da girma, ƙarfin wutar lantarki yana da girma. Babban ƙarfin wutar lantarki, fiye da sau 3 na Si, ƙara ƙarfin watsa zafi na na'urar da kuma fahimtar ƙarancin na'urar.