4H-Semi HPSI 2inch SiC substrate wafer Production Dummy Research daraja

4H-Semi HPSI 2inch SiC substrate wafer Production Dummy Research grade Featured Image

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2inch silicon carbide single crystal substrate wafer abu ne mai girman gaske tare da fitattun kaddarorin jiki da sinadarai. An yi shi da siliki carbide guda kristal abu mai tsafta tare da kyakkyawan yanayin zafi, kwanciyar hankali na inji da juriya mai zafi. Godiya ga ingantaccen tsari na shirye-shiryensa da kayan inganci, wannan guntu yana ɗaya daga cikin abubuwan da aka fi so don shirye-shiryen na'urorin lantarki masu inganci a fannoni da yawa.

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Semi-insulating silicon carbide substrate SiC wafers

Silicon carbide substrate an raba shi zuwa nau'in sarrafawa da nau'in insulating, nau'in siliki carbide mai sarrafa nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in silicon na silicon carbide ana amfani da shi don LED na tushen GaN da sauran na'urorin optoelectronic, na'urorin lantarki na tushen SiC, da sauransu, da Semi- Insulating SiC silicon carbide substrate ana amfani dashi galibi don kera na'urorin mitar rediyo mai ƙarfi na GaN. Bugu da kari high-tsarki Semi-rufin HPSI da SI Semi-rufin ya bambanta, high-tsarki Semi-rufe maida hankali na 3.5 * 1013 ~ 8 * 1015/cm3 kewayon, tare da high electron motsi; Semi-rufin abu ne mai tsayin daka, juriya yana da girma sosai, ana amfani da shi gabaɗaya don kayan aikin injin microwave, mara amfani.

Semi-insulating Silicon Carbide substrate takardar SiC wafer

Tsarin crystal na SiC yana ƙayyade ta jiki, dangane da Si da GaAs, SiC yana da kayan jiki; Faɗin band ɗin da aka haramta yana da girma, kusa da sau 3 na Si, don tabbatar da cewa na'urar tana aiki a yanayin zafi mai tsayi a ƙarƙashin dogaro na dogon lokaci; Ƙarfin filin raguwa yana da girma, shine sau 1O na Si, don tabbatar da cewa ƙarfin wutar lantarki na na'urar, inganta ƙimar ƙarfin lantarki na na'urar; Matsakaicin adadin lantarki yana da girma, ya ninka sau 2 na Si, don ƙara yawan mitar na'urar da ƙarfin ƙarfin; thermal conductivity ne babba, fiye da Si, thermal conductivity ne high, thermal conductivity ne high, thermal conductivity ne high, thermal conductivity yana da girma, fiye da Si, thermal conductivity yana da girma, thermal conductivity yana da girma. High thermal conductivity, fiye da sau 3 na Si, yana ƙara ƙarfin zubar da zafi na na'urar da fahimtar ƙarancin na'urar.