4 inch SiC Wafers 6H Semi-Insulating SiC Substrates firamare, bincike, da juzu'i.
Ƙayyadaddun samfur
Daraja | Zero MPD Production Grade (Z Grade) | Daidaitaccen Matsayin Ƙirƙira (P Grade) | Dummy Grade (D Grade) | ||||||||
Diamita | 99.5mm ~ 100.0 mm | ||||||||||
4H-SI | 500 μm± 20 μm | 500 μm± 25 μm | |||||||||
Wafer Orientation |
Kashe axis: 4.0° zuwa <1120> ± 0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI | ||||||||||
4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||||||||
4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
Hanyar Farko ta Flat | {10-10} ± 5.0° | ||||||||||
Tsawon Lantarki na Farko | 32.5 mm ± 2.0 mm | ||||||||||
Tsawon Lantarki na Sakandare | 18.0mm ± 2.0 mm | ||||||||||
Gabatarwar Flat na Sakandare | Fuskar Silicon: 90° CW. daga Prime flat ± 5.0° | ||||||||||
Ƙarƙashin Ƙarfi | 3 mm ku | ||||||||||
LTV/TTV/Baka/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
Tashin hankali | C fuska | Yaren mutanen Poland | Ra ≤1 nm | ||||||||
Sa face | CMP | ≤0.2 nm | ≤0.5 nm | ||||||||
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara | Babu | Tsayin tarawa ≤ 10 mm, guda tsayi ≤2 mm | |||||||||
Hex Plates Ta Babban Haske mai ƙarfi | Tarin yanki ≤0.05% | Tarin yanki ≤0.1% | |||||||||
Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi | Babu | Tarin yanki≤3% | |||||||||
Haɗin Carbon Na gani | Tarin yanki ≤0.05% | Tarin yanki ≤3% | |||||||||
Silicon Surface Scratches By High Intensity Light | Babu | Tsayin tarawa≤1*wafer diamita | |||||||||
Edge Chips High By Intensity Light | Babu wanda aka halatta ≥0.2 mm faɗi da zurfin | 5 izini, ≤1 mm kowanne | |||||||||
Gurɓatar Silicon Surface Ta Babban Ƙarfi | Babu | ||||||||||
Marufi | Cassette mai yawa-wafer ko kwantena wafer guda ɗaya |
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