4 inch Sapphire Wafer C-Plane SSP/DSP 0.43mm 0.65mm
Aikace-aikace
● Girman haɓaka don abubuwan III-V da II-VI.
● Electronics da optoelectronics.
● Aikace-aikacen IR.
● Silicon A Sapphire Integrated Circuit(SOS).
● Haɗin kai Mitar Rediyo (RFIC).
A cikin samar da LED, ana amfani da wafer sapphire a matsayin maƙasudin haɓakar lu'ulu'u na gallium nitride (GaN), waɗanda ke fitar da haske lokacin da ake amfani da wutar lantarki. Sapphire shine ingantaccen abu mai mahimmanci don haɓakar GaN saboda yana da tsari mai kama da kristal da haɓaka haɓakar zafi zuwa GaN, wanda ke rage lahani kuma yana haɓaka ingancin crystal.
A cikin na'urorin gani, ana amfani da wafer sapphire a matsayin tagogi da ruwan tabarau a cikin matsanancin yanayi da yanayin zafi, da kuma a cikin tsarin hoto na infrared, saboda girman bayyanar su da taurinsu.
Ƙayyadaddun bayanai
| Abu | 4-inch C-jirgin sama (0001) 650μm Sapphire Wafers | |
| Crystal Materials | 99,999%, Babban Tsafta, Monocrystalline Al2O3 | |
| Daraja | Prime, Epi-Ready | |
| Hannun saman | C-jirgin sama (0001) | |
| C-jirgin kashe-kwasa zuwa M-axis 0.2 +/- 0.1° | ||
| Diamita | 100.0 mm +/- 0.1 mm | |
| Kauri | 650 μm +/- 25 μm | |
| Hanyar Farko ta Flat | Jirgin sama (11-20) +/- 0.2° | |
| Tsawon Lantarki na Farko | 30.0 mm +/- 1.0 mm | |
| Goge Gefe Guda Daya | Fuskar Gaba | Epi- goge, Ra <0.2 nm (ta AFM) |
| (SSP) | Baya Surface | Kyakkyawan ƙasa, Ra = 0.8 μm zuwa 1.2 μm |
| Gefe Biyu | Fuskar Gaba | Epi- goge, Ra <0.2 nm (ta AFM) |
| (DSP) | Baya Surface | Epi- goge, Ra <0.2 nm (ta AFM) |
| TTV | <20 m | |
| BANGO | <20 m | |
| WARP | <20 m | |
| Tsaftacewa / Marufi | Tsabtace ɗaki na 100 mai tsafta da marufi, | |
| Guda 25 a cikin marufi guda ɗaya ko marufi guda ɗaya. | ||
Shiryawa & jigilar kaya
Kullum magana, muna samar da kunshin ta akwatin kaset na 25pcs; mu ma za mu iya cushe ta kwandon wafer ɗaya ƙarƙashin ɗakin tsaftacewa mai daraja 100 bisa ga buƙatun abokin ciniki.
Cikakken zane
