Samfurin substrate na SiC inci 3 Dia76.2mm 4H-N

Manyan siffofin wafers ɗin silicon carbide mai inci 3 sune kamar haka;

Silicon Carbide (SiC) wani abu ne mai faɗi da ke da ƙarfin lantarki, wanda ke da alaƙa da yawan zafin jiki, ƙarfin lantarki mai yawa, da kuma ƙarfin filin lantarki mai ƙarfi. Waɗannan halaye suna sa wafers ɗin SiC su yi fice a aikace-aikacen ƙarfi, mita mai yawa, da zafin jiki mai yawa. Musamman a cikin nau'in 4H-SiC, tsarin lu'ulu'u yana ba da kyakkyawan aikin lantarki, wanda hakan ya sa ya zama kayan da aka fi so don na'urorin lantarki masu ƙarfi.

Wafer ɗin Silicon Carbide 4H-N mai inci 3 wafer ne mai sinadarin nitrogen mai ƙarfin lantarki tare da tsarin N-type. Wannan hanyar yin amfani da doping tana ba wafer ɗin ƙarin yawan electrons, ta haka ne ke haɓaka aikin na'urar. Girman wafer ɗin, wanda yake inci 3 (diamita na 76.2 mm), wani girma ne da aka saba amfani da shi a masana'antar semiconductor, wanda ya dace da hanyoyin kera kayayyaki daban-daban.

Ana samar da wafer ɗin Silicon Carbide 4H-N mai inci 3 ta amfani da hanyar Physical Vapor Transport (PVT). Wannan tsari ya ƙunshi canza foda na SiC zuwa lu'ulu'u guda ɗaya a yanayin zafi mai yawa, don tabbatar da ingancin lu'ulu'u da daidaiton wafer ɗin. Bugu da ƙari, kauri na wafer yawanci yana kusa da 0.35 mm, kuma ana goge saman sa da gefuna biyu don cimma babban matakin lanƙwasa da santsi, wanda yake da mahimmanci ga ayyukan kera semiconductor na gaba.

Tsarin amfani da wafer ɗin Silicon Carbide 4H-N mai inci 3 yana da faɗi sosai, gami da na'urorin lantarki masu ƙarfi, na'urori masu auna zafin jiki mai yawa, na'urorin RF, da na'urorin optoelectronic. Kyakkyawan aiki da amincinsa yana ba wa waɗannan na'urori damar yin aiki cikin kwanciyar hankali a ƙarƙashin mawuyacin yanayi, suna biyan buƙatun kayan semiconductor masu aiki sosai a masana'antar lantarki ta zamani.

Za mu iya samar da substrate mai inci 4H-N 3, nau'ikan wafers daban-daban na substrate. Haka kuma za mu iya shirya keɓancewa bisa ga buƙatunku. Barka da zuwa tambaya!