3inch SiC Substrate Production Dia76.2mm 4H-N

Takaitaccen Bayani:

The 3-inch Silicon Carbide 4H-N wafer ne wani ci-gaba semiconductor abu, musamman tsara don high-yi lantarki da optoelectronic aikace-aikace.Mashahuri domin ta na kwarai jiki da lantarki Properties, wannan wafer ne daya daga cikin muhimman kayan a fagen ikon lantarki. .

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Babban fasali na 3 inch silicon carbide mosfet wafers sune kamar haka;

Silicon Carbide (SiC) wani abu ne mai faɗin bandgap semiconductor abu, wanda yake da ƙarfin ƙarfin zafin jiki, babban motsi na lantarki, da babban ƙarfin filin lantarki. Waɗannan kaddarorin suna sa wafers na SiC ya yi fice a cikin babban ƙarfi, mai ƙarfi, da aikace-aikacen zafin jiki. Musamman a cikin nau'in nau'in 4H-SiC, tsarinsa na crystal yana ba da kyakkyawan aikin lantarki, yana mai da shi kayan zaɓi don na'urorin lantarki.

Silicon Carbide 4H-N wafer mai inci 3 shine wafer-doped nitrogen tare da haɓaka nau'in N. Wannan hanyar doping tana ba wafer ɗin mafi girman ƙarfin lantarki, ta haka yana haɓaka aikin na'urar. Girman wafer, a inci 3 (diamita na 76.2 mm), girma ne da aka saba amfani da shi a masana'antar semiconductor, wanda ya dace da tsarin masana'antu daban-daban.

Ana samar da wafer Silicon Carbide 4H-N mai inci 3 ta amfani da hanyar Sufuri ta Jiki (PVT). Wannan tsari ya haɗa da canza SiC foda zuwa lu'ulu'u guda ɗaya a yanayin zafi mai yawa, tabbatar da ingancin kristal da daidaituwa na wafer. Bugu da ƙari, kauri na wafer yawanci kusan 0.35 mm, kuma saman sa yana ƙarƙashin goge fuska biyu don cimma babban matakin laushi da santsi, wanda ke da mahimmanci ga ayyukan masana'antar semiconductor na gaba.

Kewayon aikace-aikacen 3-inch Silicon Carbide 4H-N wafer yana da yawa, gami da na'urorin lantarki masu ƙarfi, na'urori masu zafi masu zafi, na'urorin RF, da na'urorin optoelectronic. Kyakkyawan aikinsa da amincinsa yana ba wa waɗannan na'urori damar yin aiki da ƙarfi a ƙarƙashin matsanancin yanayi, suna biyan buƙatun kayan aikin semiconductor masu girma a cikin masana'antar lantarki ta zamani.

Za mu iya samar da 4H-N 3inch SiC substrate, daban-daban maki na substrate stock wafers. Hakanan zamu iya shirya gyare-gyare gwargwadon bukatunku. Maraba da tambaya!