Inci 3 Tsarkakakken Tsaftataccen Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
Aikace-aikace
Wafers na HPSI SiC suna da matuƙar muhimmanci wajen ba da damar na'urorin wutar lantarki na zamani, waɗanda ake amfani da su a cikin aikace-aikace iri-iri masu inganci:
Tsarin Canza Wutar Lantarki: Wafers na SiC suna aiki a matsayin babban kayan aiki ga na'urorin wutar lantarki kamar MOSFETs na wutar lantarki, diodes, da IGBTs, waɗanda suke da mahimmanci don ingantaccen canjin wutar lantarki a cikin da'irori na lantarki. Ana samun waɗannan abubuwan a cikin kayan wutar lantarki masu inganci, tuƙi na mota, da inverters na masana'antu.
Motocin Wutar Lantarki (EVs):Bukatar motocin lantarki da ke ƙaruwa yana buƙatar amfani da na'urorin lantarki masu inganci, kuma wafers ɗin SiC suna kan gaba a wannan sauyi. A cikin wafers ɗin EV, waɗannan wafers suna ba da inganci mai yawa da ikon canzawa cikin sauri, wanda ke ba da gudummawa ga saurin lokacin caji, tsawon lokaci, da haɓaka aikin motar gabaɗaya.
Makamashin Mai Sabuntawa:A cikin tsarin makamashi mai sabuntawa kamar wutar lantarki ta hasken rana da iska, ana amfani da wafers na SiC a cikin inverters da converters waɗanda ke ba da damar kamawa da rarraba makamashi mai inganci. Babban ƙarfin wutar lantarki mai zafi da ƙarfin lantarki mai ƙarfi na SiC suna tabbatar da cewa waɗannan tsarin suna aiki da aminci, koda a cikin mawuyacin yanayi na muhalli.
Masana'antu da sarrafa kansa da kuma robotics:Na'urorin lantarki masu ƙarfi a cikin tsarin sarrafa kansa na masana'antu da na'urorin robotic suna buƙatar na'urori masu iya canzawa da sauri, sarrafa manyan nauyin wutar lantarki, da kuma aiki a ƙarƙashin matsin lamba mai yawa. Na'urorin semiconductors masu tushen SiC suna cika waɗannan buƙatun ta hanyar samar da ingantaccen aiki da ƙarfi, koda a cikin mawuyacin yanayi na aiki.
Tsarin Sadarwa:A cikin kayayyakin more rayuwa na sadarwa, inda babban aminci da ingantaccen juyar da makamashi suke da mahimmanci, ana amfani da wafers na SiC a cikin samar da wutar lantarki da masu canza DC-DC. Na'urorin SiC suna taimakawa rage yawan amfani da makamashi da haɓaka aikin tsarin a cibiyoyin bayanai da hanyoyin sadarwa.
Ta hanyar samar da tushe mai ƙarfi don aikace-aikacen wutar lantarki mai ƙarfi, wafer na HPSI SiC yana ba da damar haɓaka na'urori masu amfani da makamashi, yana taimakawa masana'antu su canza zuwa mafita masu kyau da dorewa.
Kadarorin
| aiki | Matsayin Samarwa | Matsayin Bincike | Daraja ta Karya |
| diamita | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm | 75.0 mm ± 0.5 mm |
| Kauri | 350 µm ± 25 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Tsarin Wafer | A kan axis: <0001> ± 0.5° | A kan axis: <0001> ± 2.0° | A kan axis: <0001> ± 2.0° |
| Yawan bututun micropipe ga kashi 95% na Wafers (MPD) | ≤ 1 cm⁻² | ≤ 5 cm⁻² | ≤ 15 cm⁻² |
| Juriyar Lantarki | ≥ 1E7 Ω·cm | ≥ 1E6 Ω·cm | ≥ 1E5 Ω·cm |
| Dopant | Ba a taɓa shan ƙwayoyi ba | Ba a taɓa shan ƙwayoyi ba | Ba a taɓa shan ƙwayoyi ba |
| Babban Tsarin Faɗi | {11-20} ± 5.0° | {11-20} ± 5.0° | {11-20} ± 5.0° |
| Babban Tsawon Lebur | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm | 32.5 mm ± 3.0 mm |
| Tsawon Lebur na Biyu | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Tsarin Faɗi na Biyu | Fuska ta sama: 90° CW daga babban ɗakin kwana ± 5.0° | Fuska ta sama: 90° CW daga babban ɗakin kwana ± 5.0° | Fuska ta sama: 90° CW daga babban ɗakin kwana ± 5.0° |
| Keɓewa a Gefen | 3 mm | 3 mm | 3 mm |
| LTV/TTV/Bow/Warp | 3 µm / 10 µm / ± 30 µm / 40 µm | 3 µm / 10 µm / ± 30 µm / 40 µm | 5 µm / 15 µm / ± 40 µm / 45 µm |
| Taushin saman | Fuskar C: An goge, Fuskar Si: CMP | Fuskar C: An goge, Fuskar Si: CMP | Fuskar C: An goge, Fuskar Si: CMP |
| Fashewa (ana duba su da haske mai ƙarfi) | Babu | Babu | Babu |
| Faranti na Hex (ana duba su da haske mai ƙarfi) | Babu | Babu | Yankin da aka tara 10% |
| Yankunan da aka yi amfani da su ta hanyar amfani da haske mai ƙarfi (ana duba su da haske mai ƙarfi) | Yankin da aka tara 5% | Yankin da aka tara 5% | Yankin da aka tara 10% |
| Ƙira (ana duba ta da haske mai ƙarfi) | ≤ 5 karce, tsawon jimilla ≤ 150 mm | ≤ ƙwanƙwasa 10, tsawon da aka tara ≤ 200 mm | ≤ ƙwanƙwasa 10, tsawon da aka tara ≤ 200 mm |
| Ƙunƙwasawa na Edge | Babu wanda aka yarda da shi ≥ 0.5 mm faɗi da zurfi | An yarda da 2, ≤ 1 mm faɗi da zurfi | An yarda da 5, ≤ 5 mm faɗi da zurfi |
| Gurɓatar Fuskar Sama (ana duba ta da haske mai ƙarfi) | Babu | Babu | Babu |
Muhimman Fa'idodi
Ingantaccen Aikin Zafi: Babban ƙarfin watsa zafi na SiC yana tabbatar da ingantaccen watsa zafi a cikin na'urorin wutar lantarki, yana ba su damar aiki a matakan wutar lantarki mafi girma da mita ba tare da ƙara zafi ba. Wannan yana fassara zuwa ƙananan tsarin da suka fi inganci da tsawon rayuwar aiki.
Babban Ƙarfin Wutar Lantarki: Tare da faffadan bandgip idan aka kwatanta da silicon, wafers na SiC suna tallafawa aikace-aikacen wutar lantarki mai ƙarfi, wanda hakan ya sa suka dace da abubuwan lantarki masu ƙarfi waɗanda ke buƙatar jure babban ƙarfin lantarki mai lalacewa, kamar a cikin motocin lantarki, tsarin wutar lantarki, da tsarin makamashi mai sabuntawa.
Rage Asarar Wutar Lantarki: Ƙananan juriya da saurin sauyawa na na'urorin SiC suna haifar da raguwar asarar makamashi yayin aiki. Wannan ba wai kawai yana inganta inganci ba ne, har ma yana haɓaka jimlar tanadin makamashi na tsarin da aka tura su.
Ingantaccen Aminci a Muhalli Mai Tsanani: Ƙarfin kayan SiC yana ba shi damar yin aiki a cikin yanayi mai tsanani, kamar yanayin zafi mai yawa (har zuwa 600°C), ƙarfin lantarki mai yawa, da kuma yawan mitoci. Wannan yana sa wafers na SiC ya dace da aikace-aikacen masana'antu, motoci, da makamashi mai wahala.
Ingantaccen Makamashi: Na'urorin SiC suna ba da ƙarfin lantarki mafi girma fiye da na'urorin gargajiya na silicon, suna rage girma da nauyin tsarin lantarki mai ƙarfi yayin da suke inganta ingancinsu gabaɗaya. Wannan yana haifar da tanadin kuɗi da ƙaramin tasirin muhalli a aikace-aikace kamar makamashi mai sabuntawa da motocin lantarki.
Ƙarfin Ma'auni: Girman inci 3 da kuma daidaiton juriyar masana'antu na HPSI SiC wafer yana tabbatar da cewa yana da sauƙin sarrafawa don samar da kayayyaki da yawa, yana biyan buƙatun bincike da masana'antu na kasuwanci.
Kammalawa
Wafer ɗin HPSI SiC, mai diamita inci 3 da kauri µm ± 25 µm, shine mafi kyawun kayan aiki ga ƙarni na gaba na na'urorin lantarki masu ƙarfi masu aiki. Haɗinsa na musamman na watsa wutar lantarki mai zafi, ƙarfin lantarki mai ƙarfi, ƙarancin asarar makamashi, da aminci a ƙarƙashin yanayi mai tsauri ya sa ya zama muhimmin sashi don aikace-aikace daban-daban a cikin canza wutar lantarki, makamashi mai sabuntawa, motocin lantarki, tsarin masana'antu, da sadarwa.
Wannan wafer ɗin SiC ya dace musamman ga masana'antu da ke neman cimma ingantaccen aiki, ƙarin tanadin makamashi, da kuma ingantaccen tsarin aminci. Yayin da fasahar lantarki ta wutar lantarki ke ci gaba da bunƙasa, wafer ɗin HPSI SiC yana ba da tushe don haɓaka mafita masu inganci ga tsara mai zuwa, wanda ke haifar da sauyi zuwa ga makoma mai ɗorewa, mai ƙarancin carbon.
Cikakken Zane
