3inch High tsafta Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade

3inch Babban Tsabtace Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Firamin Hoto

Takaitaccen Bayani:

HPSI (High-Purity Silicon Carbide) SiC wafer, tare da diamita 3-inch da kauri na 350 µm ± 25 µm, an ƙera shi don aikace-aikacen lantarki mai yankan-baki. Wafers na SiC sun shahara saboda abubuwan kayansu na musamman, kamar babban ƙarfin zafin jiki, juriya mai ƙarfi, da ƙarancin ƙarancin kuzari, wanda ya sa su zaɓi zaɓi don na'urorin semiconductor. An tsara waɗannan wafers don kula da matsanancin yanayi, suna ba da ingantaccen aiki a cikin mita mai girma, ƙarfin lantarki, da yanayin zafi mai zafi, duk yayin da yake tabbatar da ingantaccen makamashi da dorewa.

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Aikace-aikace

HPSI SiC wafers suna da mahimmanci wajen ba da damar na'urorin wutar lantarki na gaba, waɗanda ake amfani da su a cikin aikace-aikacen manyan ayyuka iri-iri:
Tsarin Canza Wuta: SiC wafers suna aiki azaman ainihin kayan don na'urorin wuta kamar MOSFETs masu ƙarfi, diodes, da IGBTs, waɗanda ke da mahimmanci don ingantaccen canjin wutar lantarki a cikin da'irori na lantarki. Ana samun waɗannan abubuwan haɗin gwiwa a cikin samar da wutar lantarki mai inganci, injin tuƙi, da inverter na masana'antu.

Motocin Lantarki (EVs):Haɓaka buƙatun motocin lantarki na buƙatar yin amfani da na'urorin lantarki masu inganci, kuma wafers na SiC sune kan gaba wajen wannan sauyi. A cikin EV powertrains, waɗannan wafers suna ba da ingantaccen aiki da saurin sauyawa, waɗanda ke ba da gudummawa ga lokutan caji da sauri, tsayi mai tsayi, da haɓaka aikin abin hawa gabaɗaya.

Makamashi Mai Sabuntawa:A cikin tsarin makamashi mai sabuntawa kamar hasken rana da wutar lantarki, ana amfani da wafers na SiC a cikin inverters da masu juyawa waɗanda ke ba da damar kamawa da rarraba makamashi mafi inganci. Babban ƙarfin wutar lantarki mai ƙarfi da ƙarancin wutar lantarki na SiC yana tabbatar da cewa waɗannan tsarin suna aiki da dogaro, ko da ƙarƙashin matsanancin yanayin muhalli.

Masana'antu Automation da Robotics:Ƙarfin wutar lantarki mai girma a cikin tsarin sarrafa kansa na masana'antu da na'ura mai kwakwalwa na buƙatar na'urorin da za su iya canzawa da sauri, sarrafa manyan kayan wuta, da kuma aiki a ƙarƙashin babban damuwa. Semiconductors na tushen SiC sun cika waɗannan buƙatun ta hanyar samar da ingantaccen aiki da ƙarfi, har ma a cikin matsanancin yanayin aiki.

Tsarin Sadarwa:A cikin kayan aikin sadarwa, inda babban dogaro da ingantaccen canjin makamashi ke da mahimmanci, ana amfani da wafers na SiC a cikin samar da wutar lantarki da masu canza DC-DC. Na'urorin SiC suna taimakawa rage yawan kuzari da haɓaka aikin tsarin a cibiyoyin bayanai da cibiyoyin sadarwa.

Ta hanyar samar da tushe mai ƙarfi don aikace-aikacen ƙarfi mai ƙarfi, HPSI SiC wafer yana ba da damar haɓaka na'urori masu amfani da makamashi, taimakawa masana'antu canzawa zuwa kore, mafi ɗorewa mafita.

Kayayyaki

aiki	Matsayin samarwa	Matsayin Bincike	Dummy Grade
Diamita	75.0 mm ± 0.5 mm	75.0 mm ± 0.5 mm	75.0 mm ± 0.5 mm
Kauri	350 µm ± 25 µm	350 µm ± 25 µm	350 µm ± 25 µm
Wafer Orientation	Kan axis: <0001> ± 0.5°	Kan axis: <0001> ± 2.0°	Kan axis: <0001> ± 2.0°
Matsakaicin Micropipe na 95% na Wafers (MPD)	≤ 1 cm²	≤5 cm²	≤ 15 cm²
Juriya na Lantarki	≥ 1E7 Ω·cm	≥ 1E6 Ω·cm	≥ 1E5 Ω·cm
Dopant	An kwance	An kwance	An kwance
Hannun Filayen Firamare	{11-20} ± 5.0°	{11-20} ± 5.0°	{11-20} ± 5.0°
Tsawon Fitowa na Farko	32.5 mm ± 3.0 mm	32.5 mm ± 3.0 mm	32.5 mm ± 3.0 mm
Tsawon Lantarki na Sakandare	18.0 mm ± 2.0 mm	18.0 mm ± 2.0 mm	18.0 mm ± 2.0 mm
Gabatarwar Flat na Sakandare	Si Fuska: 90° CW daga firamare lebur ± 5.0°	Si Fuska: 90° CW daga firamare lebur ± 5.0°	Si Fuska: 90° CW daga firamare lebur ± 5.0°
Ƙarƙashin Ƙarfi	3 mm ku	3 mm ku	3 mm ku
LTV/TTV/Baka/Warp	3 µm / 10 µm / ± 30 µm / 40 µm	3 µm / 10 µm / ± 30 µm / 40 µm	5 µm / 15 µm / ± 40 µm / 45 µm
Tashin Lafiya	C-fuska: goge, Si-fuska: CMP	C-fuska: goge, Si-fuska: CMP	C-fuska: goge, Si-fuska: CMP
Cracks (ana duba shi ta hanyar babban tsananin haske)	Babu	Babu	Babu
Hex Plates (wanda aka bincika ta babban haske mai ƙarfi)	Babu	Babu	Tarin yanki 10%
Wuraren Polytype (ana duba ta wurin babban haske mai ƙarfi)	Yankin tarawa 5%	Yankin tarawa 5%	Tarin yanki 10%
Scratches (ana duba ta wurin babban tsananin haske)	≤ 5 scratches, tara tsawon ≤ 150 mm	≤ 10 scratches, tara tsawon ≤ 200 mm	≤ 10 scratches, tara tsawon ≤ 200 mm
Chipping Edge	Babu wanda aka halatta ≥ 0.5 mm faɗi da zurfin	2 izini, ≤ 1 mm faɗi da zurfin	5 izini, ≤ 5 mm faɗi da zurfin
Lalacewar saman (ana duba ta wurin babban haske mai ƙarfi)	Babu	Babu	Babu

Mabuɗin Amfani

Babban Ayyukan thermal: SiC's high thermal conductivity yana tabbatar da ingantaccen zafi a cikin na'urorin wuta, yana ba su damar yin aiki a mafi girman matakan wuta da mitoci ba tare da zafi ba. Wannan yana fassara zuwa ƙarami, ingantaccen tsarin aiki da tsawon rayuwar aiki.

Babban fashewa mai tsayi: tare da mafi fadi banƙantar da silicon, Sic Wafers suna tallafawa manyan aikace-aikacen lantarki, kamar a cikin motocin wutar lantarki, da tsarin wutar lantarki, da kuma sabunta tsarin makamashi.

Rage Rashin Ƙarfin Ƙarfi: Ƙarƙashin juriya da saurin sauyawa na na'urorin SiC suna haifar da raguwar asarar makamashi yayin aiki. Wannan ba kawai yana inganta inganci ba har ma yana haɓaka yawan tanadin makamashi na tsarin da aka tura su.
Ingantattun Dogaro da Muhalli na Harsh: Kayayyakin kayan aiki masu ƙarfi na SiC sun ba shi damar yin aiki a cikin matsanancin yanayi, kamar yanayin zafi mai girma (har zuwa 600°C), ƙarfin wuta mai ƙarfi, da manyan mitoci. Wannan yana sa wafers na SiC ya dace da buƙatar masana'antu, motoci, da aikace-aikacen makamashi.

Amfanin Makamashi: Na'urorin SiC suna ba da ƙarfin ƙarfin ƙarfi fiye da na'urorin tushen silicon na gargajiya, suna rage girman da nauyin tsarin lantarki yayin haɓaka haɓakar su gabaɗaya. Wannan yana haifar da tanadin farashi da ƙaramin sawun muhalli a aikace-aikace kamar makamashi mai sabuntawa da motocin lantarki.

Scalability: Diamita na 3-inch da madaidaicin jurewar masana'anta na HPSI SiC wafer yana tabbatar da cewa yana da ƙima don samarwa da yawa, yana saduwa da duka bincike da buƙatun masana'antar kasuwanci.

Kammalawa

The HPSI SiC wafer, tare da diamita 3-inch da 350 µm ± 25 µm kauri, shine mafi kyawun abu don ƙarni na gaba na na'urorin lantarki masu ƙarfi na gaba. Haɗin sa na musamman na ƙayyadaddun yanayin zafi, babban ƙarfin rushewa, ƙarancin kuzari, da aminci a ƙarƙashin matsanancin yanayi ya sa ya zama muhimmin sashi don aikace-aikace daban-daban a cikin jujjuyawar wutar lantarki, makamashin sabuntawa, motocin lantarki, tsarin masana'antu, da sadarwa.

Wannan wafer na SiC ya dace musamman don masana'antu da ke neman cimma ingantaccen aiki, babban tanadin makamashi, da ingantaccen tsarin amincin tsarin. Kamar yadda fasahar lantarki ke ci gaba da haɓakawa, HPSI SiC wafer yana ba da tushe don haɓaka ƙarni na gaba, hanyoyin samar da makamashi mai ƙarfi, tuƙi don samun ci gaba mai dorewa, ƙarancin carbon nan gaba.