3 inch Babban Tsabta (Ba a kwance) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl)

3 inch Babban Tsabta (Ba a kwance ba) Silicon Carbide Wafers Semi-Insulating Sic Substrates (HPSl) Featured Image

Takaitaccen Bayani:

3-inch High Purity Semi-Insulating (HPSI) Silicon Carbide (SiC) wafer shine mafi girman matakin ƙima wanda aka inganta don babban iko, babban mitoci, da aikace-aikacen optoelectronic. An ƙera shi da kayan 4H-SiC mai tsafta mara ƙarfi, waɗannan wafers suna nuna kyakkyawan yanayin zafi, faffadar bandeji, da ƙayyadaddun kaddarorin rufewa, yana mai da su zama makawa don haɓaka na'urar ci gaba. Tare da ingantaccen tsarin tsari da ingancin saman, HPSI SiC substrates suna aiki azaman tushe don fasahar zamani na gaba a cikin wutar lantarki, sadarwa, da masana'antar sararin samaniya, suna tallafawa sabbin abubuwa a fagage daban-daban.

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Kayayyaki

1. Halin Jiki da Tsari
● Nau'in Abu: Babban Tsabta (Ba a kwance) Silicon Carbide (SiC)
● Diamita: 3 inci (76.2 mm)
● Kauri: 0.33-0.5 mm, wanda za'a iya daidaita shi bisa bukatun aikace-aikacen.
● Tsarin Crystal: 4H-SiC polytype tare da lattice hexagonal, wanda aka sani da babban motsi na lantarki da kwanciyar hankali na thermal.
●Fitowa:
oStandard: [0001] (C-jirgin sama), dace da kewayon aikace-aikace.
oZaɓi: Kashe-axis (4° ko 8° karkatar da hankali) don haɓaka haɓakar epitaxial na yaduddukan na'ura.
●Lafi: Jimlar bambancin kauri (TTV) ● Ingancin saman:
An goge shi zuwa ƙarancin ƙarancin-ƙasa (<10/cm² yawan maƙarorin bututu). 2. Abubuwan Lantarki ● Resistivity:> 109 ^ 99 Ω · cm, ana kiyaye shi ta hanyar kawar da dopants na niyya.
● Ƙarfin Dielectric: Babban ƙarfin ƙarfin lantarki tare da ƙananan asarar dielectric, manufa don aikace-aikace masu ƙarfi.
Produutukar kan thaliyyewa: 3.5-4.9 W /M · K, 3.5-9 W / CM · k, yana ba da ingancin yanayin zafi a cikin na'urorin aiki.

3. Thermal da Mechanical Properties
●Wide Bandgap: 3.26 eV, goyon bayan aiki a karkashin babban ƙarfin lantarki, high zafin jiki, da kuma high radiation yanayi.
● Tauri: Mohs sikelin 9, yana tabbatar da ƙarfi ga lalacewa na injiniya yayin aiki.
● Ƙimar Ƙarfafa Ƙwararrun Ƙwararru: 4.2 × 10−6 / K4.2 \ sau 10 ^ {-6} / \ rubutu {K} 4.2 × 10−6 / K, yana tabbatar da kwanciyar hankali a ƙarƙashin bambance-bambancen zafin jiki.

Siga	Matsayin samarwa	Matsayin Bincike	Dummy Grade	Naúrar
Daraja	Matsayin samarwa	Matsayin Bincike	Dummy Grade
Diamita	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Kauri	500 ± 25	500 ± 25	500 ± 25	µm
Wafer Orientation	Kan-axis: <0001> ± 0.5°	Kan-axis: <0001> ± 2.0°	Kan-axis: <0001> ± 2.0°	digiri
Maƙarƙashiya Maɗaukaki (MPD)	≤ 1	≤ 5	≤ 10	cm-2^-2-2
Juriya na Lantarki	≥ 1E10	≥ 1E5	≥ 1E5	Ω · cm
Dopant	An kwance	An kwance	An kwance
Hannun Filayen Firamare	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	digiri
Tsawon Fitowa na Farko	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Tsawon Lantarki na Sakandare	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Gabatarwar Flat na Sakandare	90° CW daga firamare lebur ± 5.0°	90° CW daga firamare lebur ± 5.0°	90° CW daga firamare lebur ± 5.0°	digiri
Ƙarƙashin Ƙarfi	3	3	3	mm
LTV/TTV/Baka/Warp	3 / 10 / ± 30 / 40	3 / 10 / ± 30 / 40	5 / 15 / ± 40 / 45	µm
Tashin Lafiya	Si-fuska: CMP, C-fuska: goge	Si-fuska: CMP, C-fuska: goge	Si-fuska: CMP, C-fuska: goge
Cracks (Haske mai ƙarfi)	Babu	Babu	Babu
Hex Plates (Haske mai ƙarfi)	Babu	Babu	Tarin yanki 10%	%
Yankunan Polytype (Haske Mai Ƙarfi)	Yankin tarawa 5%	Tarin yanki 20%	Tarin yanki 30%	%
Scratches (Haske mai ƙarfi)	≤ 5 scratches, tara tsayi ≤ 150	≤ 10 scratches, tara tsayi ≤ 200	≤ 10 scratches, tara tsayi ≤ 200	mm
Chipping Edge	Babu ≥ 0.5 mm nisa/zurfin	2 an yarda ≤ 1 mm nisa/zurfin	5 an yarda ≤ 5 mm nisa/zurfin	mm
Gurbatar Sama	Babu	Babu	Babu

Aikace-aikace

1. Wutar Lantarki
Faɗin bandgap da babban ƙarfin wutar lantarki na HPSI SiC substrates ya sa su dace don na'urorin wutar lantarki da ke aiki cikin matsanancin yanayi, kamar:
●Maɗaukakin Na'urori masu Ƙarfi: Ciki har da MOSFETs, IGBTs, da Schottky Barrier Diodes (SBDs) don ingantaccen canjin wutar lantarki.
●Tsarin Makamashi Mai Sabuntawa: Irin su masu jujjuya hasken rana da masu sarrafa injin injin iska.
●Motocin Lantarki (EVs): Ana amfani da su a cikin inverters, caja, da tsarin wutar lantarki don inganta inganci da rage girman.

2. RF da Aikace-aikacen Microwave
Babban juriya da ƙananan asarar dielectric na wafers na HPSI suna da mahimmanci don mitar rediyo (RF) da tsarin microwave, gami da:
●Tsarin Sadarwar Sadarwa: Tashoshin tushe don cibiyoyin sadarwar 5G da sadarwar tauraron dan adam.
● Aerospace da Tsaro: Tsarin Radar, eriya-array-array, da abubuwan haɗin jirgin sama.

3. Optoelectronics
Bayyanar gaskiya da faffadan bandeji na 4H-SiC yana ba da damar amfani da shi a cikin na'urorin optoelectronic, kamar:
●UV Photodetectors: Don kula da muhalli da bincike na likita.
● LEDs masu ƙarfi: Taimakawa tsarin hasken wutar lantarki mai ƙarfi.
●Laser Diodes: Don aikace-aikacen masana'antu da na likita.

4. Bincike da Ci gaba
HPSI SiC ana amfani da su sosai a cikin dakunan gwaje-gwaje na R&D na ilimi da masana'antu don bincika abubuwan ci gaba da ƙirƙira na'ura, gami da:
● Ci gaban Layer Epitaxial: Nazarin kan rage lahani da inganta Layer.
● Nazarin Motsi na Mai ɗaukar kaya: Binciken lantarki da jigilar ramuka a cikin kayan tsabta mai tsabta.
●Prototyping: Farko na haɓaka na'urorin zamani da da'irori.

Amfani

Mafi Girma:
Babban tsabta da ƙarancin ƙarancin lahani suna ba da ingantaccen dandamali don aikace-aikacen ci gaba.

Ƙarfin Ƙarfi:
Kyawawan kaddarorin kashe zafi suna ba da damar na'urori suyi aiki da kyau a ƙarƙashin babban iko da yanayin zafin jiki.

Faɗin Daidaitawa:
Hanyoyin da ake da su da zaɓuɓɓukan kauri na al'ada suna tabbatar da daidaitawa don buƙatun na'urori daban-daban.

Dorewa:
Musamman taurin da kwanciyar hankali na tsari yana rage lalacewa da lalacewa yayin aiki da aiki.

Yawanci:
Ya dace da masana'antu daban-daban, daga makamashi mai sabuntawa zuwa sararin samaniya da sadarwa.

Kammalawa

3-inch High Purity Semi-Insulating Silicon Carbide wafer yana wakiltar koli na fasaha mai ƙarfi don babban iko, mitoci, da na'urorin optoelectronic. Haɗin sa na kyakkyawan yanayin zafi, lantarki, da kayan aikin injiniya yana tabbatar da ingantaccen aiki a cikin mahalli masu ƙalubale. Daga na'urorin lantarki da na'urorin RF zuwa optoelectronics da R&D na ci gaba, waɗannan abubuwan da ake amfani da su na HPSI suna ba da tushe don sabbin abubuwan gobe.
Don ƙarin bayani ko yin oda, da fatan za a tuntuɓe mu. Ƙungiyarmu ta fasaha tana samuwa don samar da jagora da zaɓuɓɓukan gyare-gyare waɗanda suka dace da bukatun ku.