Tsarkakken Inci 3 (Ba a taɓa shafa ba) Wafers ɗin Silicon Carbide Semi-Insulating Sic Substrates (HPSl)

Inci 3 Tsarkakakken Silikon Carbide Wafers Semi-Insulating Sic Substrates (HPSl) Hoton da aka Fito

Takaitaccen Bayani:

Wafer ɗin Silicon Carbide (SiC) mai inci 3 mai ƙarfi High Purity Semi-Insulating (HPSI) wani nau'in sinadari ne mai inganci wanda aka inganta don amfani da shi a manyan ƙarfin lantarki, mita mai yawa, da kuma aikace-aikacen optoelectronic. An ƙera shi da kayan 4H-SiC marasa tsabta, masu ƙarfi, kuma suna nuna kyakkyawan yanayin zafi, faɗin bandgip, da kuma kyawawan kaddarorin semi-insulating, wanda hakan ya sa su zama dole don ci gaba da haɓaka na'urori. Tare da ingantaccen tsarin gini da ingancin saman, substrates na HPSI SiC suna aiki a matsayin tushe ga fasahar zamani ta zamani a masana'antar lantarki, sadarwa, da sararin samaniya, suna tallafawa ƙirƙira a fannoni daban-daban.

Aika mana imel

Siffofi

Kadarorin

1. Sifofin Jiki da Tsarin Gida
●Nau'in Kayan Aiki: Tsarkakken Abu (Ba a Shafa ba) Silicon Carbide (SiC)
●Diamita: inci 3 (76.2 mm)
●Kauri: 0.33-0.5 mm, ana iya daidaita shi bisa ga buƙatun aikace-aikace.
● Tsarin lu'ulu'u: nau'in polytype 4H-SiC mai lattice mai hexagonal, wanda aka san shi da ƙarfin motsi na electrons da kwanciyar hankali na zafi.
●Jagora:
oStandard: [0001] (C-plane), wanda ya dace da aikace-aikace iri-iri.
o Zabi: A gefen da'ira (4° ko 8° karkata) don haɓaka haɓakar epitaxial na yadudduka na na'ura.
●Fuska: Bambancin kauri gaba ɗaya (TTV) ●Ingancin saman:
An goge shi zuwa o Ƙarancin lahani (<10/cm² yawan bututun micro). 2. Halayen Wutar Lantarki ● Juriya: >109^99 Ω·cm, ana kiyaye shi ta hanyar kawar da allurar da aka yi niyya.
● Ƙarfin Dielectric: Babban juriyar ƙarfin lantarki tare da ƙarancin asarar dielectric, ya dace da aikace-aikacen wutar lantarki mai ƙarfi.
●Tsarin da ke aiki da zafi: 3.5-4.9 W/cm·K, wanda ke ba da damar watsa zafi mai inganci a cikin na'urori masu aiki mai kyau.

3. Halayen Zafi da Inji
●Faɗin Bandgip: 3.26 eV, yana tallafawa aiki a ƙarƙashin babban ƙarfin lantarki, zafi mai yawa, da yanayin radiation mai yawa.
●Taurin kai: Mohs sikelin 9, yana tabbatar da ƙarfi daga lalacewa ta injiniya yayin sarrafawa.
●Ma'aunin Faɗaɗawar Zafi: 4.2×10−6/K4.2 \sau 10^{-6}/\text{K}4.2×10−6/K, yana tabbatar da daidaiton girma a ƙarƙashin bambancin zafin jiki.

Sigogi	Matsayin Samarwa	Matsayin Bincike	Daraja ta Karya	Naúrar
Matsayi	Matsayin Samarwa	Matsayin Bincike	Daraja ta Karya
diamita	76.2 ± 0.5	76.2 ± 0.5	76.2 ± 0.5	mm
Kauri	500 ± 25	500 ± 25	500 ± 25	µm
Tsarin Wafer	A kan axis: <0001> ± 0.5°	A kan axis: <0001> ± 2.0°	A kan axis: <0001> ± 2.0°	digiri
Yawan Bututun Micropipe (MPD)	≤ 1	≤ 5	≤ 10	cm−2^-2−2
Juriyar Lantarki	≥ 1E10	≥ 1E5	≥ 1E5	Ω·cm
Dopant	Ba a taɓa shan ƙwayoyi ba	Ba a taɓa shan ƙwayoyi ba	Ba a taɓa shan ƙwayoyi ba
Babban Tsarin Faɗi	{1-100} ± 5.0°	{1-100} ± 5.0°	{1-100} ± 5.0°	digiri
Babban Tsawon Lebur	32.5 ± 3.0	32.5 ± 3.0	32.5 ± 3.0	mm
Tsawon Lebur na Biyu	18.0 ± 2.0	18.0 ± 2.0	18.0 ± 2.0	mm
Tsarin Faɗi na Biyu	90° CW daga babban ɗakin kwana ± 5.0°	90° CW daga babban ɗakin kwana ± 5.0°	90° CW daga babban ɗakin kwana ± 5.0°	digiri
Keɓewa a Gefen	3	3	3	mm
LTV/TTV/Bow/Warp	3 / 10 / ± 30 / 40	3 / 10 / ± 30 / 40	5 / 15 / ±40 / 45	µm
Taushin saman	Si-fuskar: CMP, C-fuskar: An goge	Si-fuskar: CMP, C-fuskar: An goge	Si-fuskar: CMP, C-fuskar: An goge
Fashewa (Haske Mai Tsanani)	Babu	Babu	Babu
Faranti na Hex (Haske Mai Tsanani)	Babu	Babu	Yankin da aka tara 10%	%
Yankunan da aka fi amfani da su (Haske Mai Tsanani)	Yankin da aka tara 5%	Yankin da aka tara 20%	Yankin da aka tara 30%	%
Ƙira (Haske Mai Tsanani)	≤ 5 karce, tsawon da aka tara ≤ 150	≤ 10 karce, tsawon da aka tara ≤ 200	≤ 10 karce, tsawon da aka tara ≤ 200	mm
Ƙunƙwasawa na Edge	Babu ≥ 0.5 mm faɗi/zurfi	An yarda da 2 ≤ Faɗin/zurfin 1 mm	An yarda da 5 ≤ Faɗi/zurfi 5 mm	mm
Gurɓatar Fuskar	Babu	Babu	Babu

Aikace-aikace

1. Lantarki Mai Lantarki
Faɗin bandgip da kuma yawan zafin jiki na substrates na HPSI SiC sun sa su dace da na'urorin wutar lantarki da ke aiki a cikin mawuyacin yanayi, kamar:
●Na'urorin Wutar Lantarki Masu Yawan Wuta: Sun haɗa da MOSFETs, IGBTs, da kuma Schottky Barrier Diodes (SBDs) don ingantaccen canjin wutar lantarki.
●Tsarin Makamashi Mai Sabuntawa: Kamar injinan inverters na hasken rana da injinan sarrafa turbine na iska.
●Motocin Lantarki (EVs): Ana amfani da su a cikin inverters, caja, da tsarin powertrain don inganta inganci da rage girma.

2. Aikace-aikacen RF da Microwave
Babban juriya da ƙarancin asarar dielectric na wafers na HPSI suna da mahimmanci ga tsarin mitar rediyo (RF) da microwave, gami da:
●Kayayyakin Sadarwa: Tashoshin tushe na hanyoyin sadarwa na 5G da sadarwa ta tauraron dan adam.
●Sararin Sama da Tsaro: Tsarin radar, eriya mai tsari mai matakai, da kuma abubuwan da ke cikin jirgin sama.

3. Injin lantarki
Bayyanar gaskiya da kuma faɗin bandgita na 4H-SiC yana ba da damar amfani da shi a cikin na'urorin lantarki, kamar:
●Masu gano hasken UV: Don sa ido kan muhalli da kuma gano cutar a fannin likitanci.
●Leds masu ƙarfi: Taimaka wa tsarin hasken da ke da ƙarfi.
●Laser Diodes: Don aikace-aikacen masana'antu da na likitanci.

4. Bincike da Ci gaba
Ana amfani da ƙananan ƙwayoyin HPSI SiC sosai a dakunan gwaje-gwaje na bincike da haɓaka fasaha na ilimi da na masana'antu don bincika halayen kayan aiki na zamani da ƙera na'urori, gami da:
●Ƙaruwar Layer Mai Zurfi: Nazari kan rage lahani da inganta Layer.
●Nazarin Motsi na Masu Jigilar Kaya: Binciken jigilar lantarki da ramuka a cikin kayan da ke da tsabta.
●Tsarin samfura: Ƙirƙirar farko ta sabbin na'urori da da'irori.

Fa'idodi

Inganci Mai Kyau:
Tsarkakakken tsarki da ƙarancin lahani suna samar da dandamali mai aminci don aikace-aikacen ci gaba.

Kwanciyar Hankali:
Kyakkyawan halayen watsa zafi suna ba na'urori damar yin aiki yadda ya kamata a ƙarƙashin yanayin zafi mai ƙarfi da ƙarfi.

Dacewar Faɗi:
Jagororin da ake da su da zaɓuɓɓukan kauri na musamman suna tabbatar da daidaitawa ga buƙatun na'urori daban-daban.

Dorewa:
Taurin kai da kwanciyar hankali na musamman suna rage lalacewa da nakasa yayin sarrafawa da aiki.

Sauƙin amfani:
Ya dace da masana'antu daban-daban, tun daga makamashin da ake sabuntawa zuwa sararin samaniya da sadarwa.

Kammalawa

Wafer ɗin Silicon Carbide mai inci 3 mai ƙarfi yana wakiltar babban fasahar substrate don na'urorin lantarki masu ƙarfi, masu yawan mita, da kuma na'urorin lantarki. Haɗinsa na kyawawan halayen zafi, lantarki, da na inji yana tabbatar da ingantaccen aiki a cikin yanayi mai ƙalubale. Daga na'urorin lantarki masu ƙarfi da tsarin RF zuwa na'urorin lantarki masu ƙarfi da kuma na'urorin bincike da ci gaba, waɗannan na'urorin HPSI suna ba da tushe ga sabbin abubuwa na gobe.
Don ƙarin bayani ko yin oda, da fatan za a tuntuɓe mu. Ƙungiyar fasaha tamu tana nan don samar da jagora da zaɓuɓɓukan keɓancewa waɗanda suka dace da buƙatunku.