2inch SiC ingot Dia50.8mmx10mmt 4H-N monocrystal

Takaitaccen Bayani:

SiC (silicon carbide) ingot ingot 2-inch yana nufin silindrical ko siffa guda ɗaya na silicon carbide tare da diamita ko tsayin gefen inci 2. Ana amfani da ingots na siliki na carbide azaman kayan farawa don samar da na'urorin semiconductor daban-daban, kamar na'urorin lantarki da na'urorin optoelectronic.

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Fasahar Ci gaban SiC Crystal

Halayen SiC suna sa ya yi wahala girma lu'ulu'u ɗaya. Wannan shi ne yafi saboda gaskiyar cewa babu wani lokaci na ruwa tare da rabon stoichiometric na Si: C = 1: 1 a matsa lamba na yanayi, kuma ba zai yiwu ba don girma SiC ta hanyar mafi girma girma hanyoyin, irin su hanyar zane kai tsaye kuma hanyar faɗowa crucible, waɗanda su ne ginshiƙan masana'antar semiconductor. A ka'ida, wani bayani tare da stoichiometric rabo na Si: C = 1: 1 za a iya samu ne kawai a lokacin da matsa lamba ne mafi girma fiye da 10E5atm da zafin jiki ne mafi girma fiye da 3200 ℃. A halin yanzu, hanyoyin da ake amfani da su sun haɗa da hanyar PVT, hanyar ruwa-lokaci, da kuma hanyar saka sinadarai masu zafi mai zafi.

SiC wafers da lu'ulu'u da muke samarwa galibi ana girma ta hanyar jigilar tururi ta jiki (PVT), kuma mai zuwa shine taƙaitaccen gabatarwa ga PVT:

Hanyar safarar tururi ta jiki (PVT) ta samo asali ne daga fasahar sublimation na gas-lokacin da Lely ya ƙirƙira a cikin 1955, wanda aka sanya SiC foda a cikin bututu mai graphite kuma mai zafi zuwa babban zafin jiki don sa foda na SiC ya lalace kuma ya lalace, sannan graphite. An kwantar da bututu, kuma an adana abubuwan da aka lalata-lokacin iskar gas na foda na SiC kuma ana yin crystallized azaman lu'ulu'u na SiC a cikin kewayen yankin. graphite tube. Kodayake wannan hanyar tana da wahala a sami manyan lu'ulu'u ɗaya na SiC masu girma da yawa kuma tsarin sakawa a cikin bututun graphite yana da wahalar sarrafawa, yana ba da ra'ayoyi ga masu bincike na gaba.

YM Tairov et al. a Rasha ya gabatar da manufar kristal iri a kan wannan tushen, wanda ya warware matsalar siffar crystal marar sarrafawa da matsayi na tsakiya na SiC crystals. Masu bincike na gaba sun ci gaba da haɓaka kuma daga ƙarshe sun haɓaka hanyar canja wurin tururin jiki (PVT) wanda ake amfani da shi ta masana'antu a yau.

A matsayin farkon hanyar ci gaban kristal SiC, PVT a halin yanzu shine mafi girman hanyar girma don lu'ulu'u na SiC. Idan aka kwatanta da sauran hanyoyin, wannan hanya tana da ƙananan buƙatu don kayan haɓaka haɓaka, tsarin haɓaka mai sauƙi, mai ƙarfi mai ƙarfi, cikakken ci gaba da bincike, kuma an riga an haɓaka masana'antu.