Ingot na SiC ingot na inci 2 Dia50.8mmx10mmt 4H-N monocrystal

Hoton SiC mai inci 2 Dia50.8mmx10mmt 4H-N monocrystal mai fasali

Takaitaccen Bayani:

Ingot na SiC (silicon carbide) mai inci 2 yana nufin lu'ulu'u ɗaya mai siffar silinda ko bulo mai diamita ko tsawon gefen inci 2. Ana amfani da ingot na silicon carbide a matsayin kayan farawa don samar da na'urori daban-daban na semiconductor, kamar na'urorin lantarki masu ƙarfi da na'urorin optoelectronic.

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Siffofi

Fasahar Ci Gaban SiC Crystal

Halayen SiC suna sa ya yi wuya a shuka lu'ulu'u guda ɗaya. Wannan ya faru ne musamman saboda babu wani matakin ruwa tare da rabon stoichiometric na Si: C = 1: 1 a matsin yanayi, kuma ba zai yiwu a shuka SiC ta hanyar hanyoyin girma mafi girma ba, kamar hanyar zane kai tsaye da hanyar crucible mai faɗuwa, waɗanda sune manyan tushen masana'antar semiconductor. A ka'ida, ana iya samun mafita tare da rabon stoichiometric na Si: C = 1: 1 ne kawai lokacin da matsin lamba ya fi 10E5atm kuma zafin jiki ya fi 3200℃. A halin yanzu, hanyoyin da aka fi amfani da su sun haɗa da hanyar PVT, hanyar ruwa-mataki, da kuma hanyar adana sinadarai mai zafi-zafi.

Wafers da lu'ulu'u na SiC da muke samarwa galibi ana noma su ne ta hanyar jigilar tururi na zahiri (PVT), kuma ga taƙaitaccen gabatarwa game da PVT:

Hanyar jigilar tururin jiki (PVT) ta samo asali ne daga dabarar sublimation ta hanyar iskar gas da Lely ta ƙirƙiro a shekarar 1955, inda aka sanya foda na SiC a cikin bututun graphite kuma aka dumama shi zuwa babban zafin jiki don ya sa foda na SiC ya ruɓe ya kuma yi laushi, sannan bututun graphite ya huce, sannan aka sanya sassan gas na foda na SiC da suka ruɓe aka sanya su a cikin lu'ulu'u na SiC a yankin da ke kewaye da bututun graphite. Kodayake wannan hanyar tana da wahalar samun manyan lu'ulu'u guda ɗaya na SiC kuma tsarin adanawa a cikin bututun graphite yana da wahalar sarrafawa, yana ba da ra'ayoyi ga masu bincike na gaba.

YM Tairov da abokan aikinsa a Rasha sun gabatar da manufar lu'ulu'u iri bisa wannan tushe, wanda ya magance matsalar siffar lu'ulu'u marasa iko da kuma matsayin nucleation na lu'ulu'u na SiC. Masu bincike na baya-bayan nan sun ci gaba da ingantawa kuma daga ƙarshe sun ƙirƙiri hanyar canja wurin tururi (PVT) ta zahiri wadda ake amfani da ita a masana'antu a yau.

A matsayin farkon hanyar girma lu'ulu'u na SiC, PVT a halin yanzu ita ce hanyar girma mafi girma ga lu'ulu'u na SiC. Idan aka kwatanta da sauran hanyoyi, wannan hanyar tana da ƙarancin buƙatun kayan aiki na girma, tsarin girma mai sauƙi, ƙarfin sarrafawa, ci gaba mai zurfi da bincike, kuma an riga an haɓaka ta a masana'antu.