2 inch 6H-N Silicon Carbide Substrate Sic Wafer Biyu Goyan bayan Babban Matsayin Matsayi

2 inch 6H-N Silicon Carbide Substrate Sic Wafer Biyu Goyanke Mai Haɓakawa Babban Matsayi Mos Matsayin Hoto

Takaitaccen Bayani:

6H n-type Silicon Carbide (SiC) guda-crystal substrate abu ne mai mahimmanci na semiconductor wanda aka yi amfani da shi sosai a cikin babban iko, mai girma, da aikace-aikacen lantarki mai zafi. Shahararren don tsarin lu'ulu'u na hexagonal, 6H-N SiC yana ba da fa'ida mai fa'ida da haɓakar yanayin zafi, yana mai da shi manufa don yanayin da ake buƙata.
Babban rushewar filin lantarki da motsin lantarki na wannan kayan yana ba da damar haɓaka ingantattun na'urorin lantarki masu ƙarfi, kamar MOSFETs da IGBTs, waɗanda zasu iya aiki a mafi girman ƙarfin lantarki da yanayin zafi fiye da waɗanda aka yi daga silicon na gargajiya. Kyakkyawan yanayin zafi mai kyau yana tabbatar da tasirin zafi mai mahimmanci, mai mahimmanci don kiyaye aiki da aminci a cikin aikace-aikace masu ƙarfi.
A aikace-aikacen mitar rediyo (RF), 6H-N SiC's Properties suna goyan bayan ƙirƙirar na'urorin da za su iya aiki a mafi girma mitoci tare da ingantacciyar inganci. Tsayuwar sinadarai da juriya ga radiation suma sun sa ya dace da amfani a cikin muggan yanayi, gami da sararin samaniya da sassan tsaro.
Bugu da ƙari kuma, 6H-N SiC substrates suna da mahimmanci ga na'urorin optoelectronic, irin su ultraviolet photodetectors, inda babban bandgap ɗin su ya ba da izinin gano hasken UV mai inganci. Haɗin waɗannan kaddarorin yana sa nau'in 6H n-type SiC ya zama madaidaicin abu kuma ba makawa a cikin haɓaka fasahar lantarki na zamani da fasahar optoelectronic.

Aika mana imel

Cikakken Bayani

Tags samfurin

Wadannan su ne halayen silicon carbide wafer:

Sunan samfur: SiC Substrate
Tsarin Hexagonal: Kayan lantarki na musamman.
Babban Motsin Wutar Lantarki: ~ 600 cm²/V·s.
· Tsawon Sinadarai: Mai jurewa da lalata.
Juriya na Radiation: Ya dace da mummuna yanayi.
Ƙarƙashin Ƙarƙashin Ƙarfafa Mai ɗaukar kaya: Mai inganci a yanayin zafi mai girma.
· Durability: Ƙarfin kayan aikin injiniya.
Ƙarfin Optoelectronic: Ingantacciyar gano hasken UV.

Silicon carbide wafer yana da aikace-aikace da yawa

Aikace-aikacen wafer na SiC:
SiC (Silicon Carbide) substrates ana amfani da a daban-daban high-yi aikace-aikace saboda musamman kaddarorin kamar high thermal conductivity, high lantarki filin lantarki, da fadi da bandgap. Ga wasu aikace-aikace:

1. Power Electronics:
MOSFETs masu ƙarfi
IGBTs (Insulated Gate Bipolar Transistors)
Schottky diodes
· Inverters

2. Na'urorin Maɗaukaki:
· RF (Mitar Rediyo) amplifiers
（Microwave transistor
· Na'urori masu motsi na millimeter

3.Maɗaukakin Wutar Lantarki:
· Na'urori masu auna firikwensin da da'irori don wurare masu tsauri
· Kayan lantarki na sararin samaniya
· Kayan lantarki na motoci (misali, sassan sarrafa injin)

4. Na'urar lantarki:
· Masu gano hoto na UV (UV).
Diodes masu fitar da haske (LEDs)
· Laser diodes

5.Tsarin Makamashi Mai Sabunta:
· Masu canza hasken rana
· Masu sauya injin injin iska
· Motocin wutar lantarki

6. Masana'antu da Tsaro:
· Tsarin radar
· Sadarwar tauraron dan adam
· Kayan aikin makamashin nukiliya

SiC wafer Customization

Za mu iya keɓance girman siginar SiC don biyan takamaiman buƙatunku. Hakanan muna ba da wafer 4H-Semi HPSI SiC tare da girman 10x10mm ko 5x5 mm.
An ƙayyade farashin ta hanyar shari'ar, kuma bayanan marufi za a iya keɓance su ga abin da kuke so.
Lokacin bayarwa yana cikin makonni 2-4. Muna karɓar biyan kuɗi ta hanyar T/T.
Our factory ya ci-gaba samar da kayan aiki da fasaha tawagar, wanda zai iya siffanta daban-daban bayani dalla-dalla, kauri da kuma siffofi na SiC wafer bisa ga abokan ciniki' takamaiman bukatun.