2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Research da Dummy grade

2inch 50.8mm Silicon Carbide SiC Wafers Doped Si N-type Production Research and Dummy grade Featured Image

Takaitaccen Bayani:

Shanghai Xinkehui Tech. Co., Ltd yana ba da mafi kyawun zaɓi da farashi don madaidaicin siliki carbide wafers da ƙwanƙwasa har zuwa diamita na inch shida tare da nau'ikan N- da Semi-insulating iri. Kamfanonin na'urori na kanana da manya da dakunan gwaje-gwaje a duk duniya suna amfani da dogaro da wafers carbide na silicone.

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Cikakken Bayani

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Ma'auni na daidaitattun inch 2-inch 4H-N wafers SiC wanda ba a rufe su sun haɗa da

Kayan abu: 4H silicon carbide (4H-SiC)

Tsarin Crystal: tetrahexahedral (4H)

Doping: Ba a gama ba (4H-N)

Girman: 2 inci

Nau'in haɓakawa: N-type (n-doped)

Gudanarwa: Semiconductor

Kasuwa Outlook: 4H-N wadanda ba doped SiC wafers suna da fa'idodi da yawa, irin su high thermal conductivity, low conduction loss, high zafin jiki juriya, da high inji kwanciyar hankali, kuma don haka suna da fadi da kasuwa hangen nesa a ikon lantarki da RF aikace-aikace. Tare da haɓaka makamashi mai sabuntawa, motocin lantarki da sadarwa, ana samun karuwar buƙatun na'urori tare da ingantaccen aiki, aiki mai zafi da ƙarfin juriya, wanda ke ba da damar kasuwa mafi fa'ida ga 4H-N waɗanda ba su da doped SiC wafers.

Yana amfani da: 2-inch 4H-N wafers SiC waɗanda ba su doped ba za a iya amfani da su don ƙirƙira nau'ikan lantarki da na'urorin RF, gami da amma ba'a iyakance ga:

1--4H-SiC MOSFETs: Metal oxide semiconductor filin sakamako transistor don babban iko / aikace-aikacen zafin jiki. Waɗannan na'urori suna da ƙarancin tafiyarwa da asarar canzawa don samar da ingantaccen inganci da aminci.

2--4H-SiC JFETs: Junction FETs don amplifier ikon RF da aikace-aikacen sauyawa. Waɗannan na'urori suna ba da babban aikin mitoci da kwanciyar hankali mai ƙarfi.

3--4H-SiC Schottky Diodes: Diodes don babban iko, babban zafin jiki, aikace-aikacen mita mai girma. Waɗannan na'urori suna ba da ingantaccen inganci tare da ƙarancin sarrafawa da sauya asarar.

4--4H-SiC Optoelectronic Devices: Na'urorin da aka yi amfani da su a wurare kamar manyan wutar lantarki diodes, UV detectors da optoelectronic hadedde circuits. Waɗannan na'urori suna da babban iko da halayen mitoci.

A taƙaice, 2-inch 4H-N wafers SiC marasa doped suna da yuwuwar aikace-aikace da yawa, musamman a cikin lantarki da RF. Ayyukan da suka fi dacewa da kwanciyar hankali mai zafi ya sa su zama masu gwagwarmaya don maye gurbin kayan siliki na gargajiya don yin aiki mai girma, zafin jiki da ƙarfin aiki.