200mm SiC substrate dummy sa 4H-N 8inch SiC wafer

Takaitaccen Bayani:

Silicon carbide substrate tare da diamita na 8 inci (kimanin 200 mm).Silicon carbide (SiC) abu ne mai mahimmanci don kera na'urorin wutar lantarki da na'urorin optoelectronic.8-inch SiC substrates ana amfani da su don kera na'urorin lantarki masu ƙarfi kamar MOSFETs masu ƙarfi, diodes mai ƙarfi, da sauran na'urori masu ƙarfi masu ƙarfi.Wannan babban ma'auni mai girma zai iya inganta ingantaccen samarwa, rage farashin masana'antu, da taimakawa ba da damar kera na'urori masu ƙarfi.Silicon carbide abu yana da kyakkyawan yanayin zafi, juriya mai zafi da juriya na radiation, yana mai da shi kyakkyawan zaɓi don kera manyan na'urori masu ƙarfi.

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Matsalolin fasaha na 8-inch SiC substrate samar sun haɗa da:

1.Crystal Growth: Samun babban inganci guda kristal girma na silicon carbide a cikin manyan diamita na iya zama kalubale saboda kula da lahani da ƙazanta.

2.Wafer Processing: Girman girman 8-inch wafers yana gabatar da ƙalubale dangane da daidaito da kuma kula da lahani yayin sarrafa wafer, kamar gogewa, etching, da doping.

3.Material Homogeneity: Tabbatar da daidaitattun kaddarorin kayan aiki da daidaituwa a duk faɗin 8-inch SiC substrate yana buƙatar fasaha ta fasaha kuma yana buƙatar daidaitaccen iko yayin aikin masana'anta.

4.Cost: Ƙaddamarwa har zuwa 8-inch SiC substrates yayin da yake kula da ingancin kayan abu da yawan amfanin ƙasa na iya zama kalubale na tattalin arziki saboda rikitarwa da farashin ayyukan samarwa.

5.Addressing waɗannan matsalolin fasaha yana da mahimmanci ga yaduwar 8-inch SiC substrates a cikin babban ƙarfin aiki da na'urorin optoelectronic.

Muna samar da sapphire substrates daga masana'antun SiC na farko na kasar Sin da ke fitarwa ciki har da Tankeblue.Fiye da shekaru 10 na hukumar ya ba mu damar kula da dangantaka ta kud da kud da masana'anta.Za mu iya samar muku da 6inch da 8inchSiC substrates kana bukatar na dogon lokaci da kuma barga wadata yayin bayar da mafi kyaun farashi da farashi.

Tankeblue babban kamfani ne na fasaha wanda ya kware a cikin haɓakawa, samarwa da siyar da kwakwalwan kwamfuta na ƙarni na uku na silicon carbide (SiC).Kamfanin yana ɗaya daga cikin manyan masu kera wafer na SiC a duniya.