2 inch SiC Wafers 6H ko 4H Semi-Insulating SiC Substrates Dia50.8mm

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Silicon carbide (SiC) fili ne na binary na Rukunin IV-IV, shine kawai tabbataccen fili mai ƙarfi a cikin Rukunin IV na Teburin Abubuwan Abubuwa na lokaci-lokaci, Yana da mahimmancin semiconductor. SiC yana da kyakkyawan yanayin zafi, inji, sinadarai da kayan lantarki, wanda ya sa ya zama ɗaya daga cikin mafi kyawun kayan aiki don yin babban zafin jiki, ƙarami, da na'urorin lantarki masu ƙarfi.

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Aikace-aikace na silicon carbide substrate

Silicon carbide substrate za a iya raba conductive irin da Semi-insulating nau'in bisa ga resistivity. Ana amfani da na'urori masu amfani da siliki carbide galibi a cikin motocin lantarki, samar da wutar lantarki, jigilar jirgin ƙasa, cibiyoyin bayanai, caji da sauran abubuwan more rayuwa. Masana'antar kera motocin lantarki suna da babban buƙatu na abubuwan sarrafa siliki na siliki, kuma a halin yanzu, Tesla, BYD, NIO, Xiaopeng da sauran sabbin kamfanonin motocin makamashi sun shirya yin amfani da na'urori masu hankali na silicon carbide.

Ana amfani da na'urorin silicon carbide Semi-insulated galibi a cikin sadarwar 5G, sadarwar abin hawa, aikace-aikacen tsaro na ƙasa, watsa bayanai, sararin samaniya da sauran fannoni. Ta hanyar haɓaka gallium nitride epitaxial Layer a kan silin-carbide substrate mai siliki, za a iya ƙara yin wafer gallium nitride epitaxial wafer na tushen silicon zuwa na'urorin RF na microwave, waɗanda galibi ana amfani da su a fagen RF, kamar masu haɓaka wutar lantarki a cikin sadarwar 5G da na'urorin gano rediyo a cikin tsaron kasa.

Kera samfuran siliki carbide substrate ya haɗa da haɓaka kayan aiki, haɓakar albarkatun ƙasa, haɓaka kristal, yankan kristal, sarrafa wafer, tsaftacewa da gwaji, da sauran hanyoyin haɗin gwiwa. Dangane da albarkatun kasa, masana'antar Songshan Boron suna samar da albarkatun siliki na siliki don kasuwa, kuma sun sami ƙananan tallace-tallace. Kayayyakin semiconductor na ƙarni na uku wanda silicon carbide ke wakilta suna taka muhimmiyar rawa a cikin masana'antar zamani, tare da haɓakar shigar sabbin motocin makamashi da aikace-aikacen hotovoltaic, buƙatun siliki carbide substrate yana gab da shigo da madaidaicin juzu'i.