Wafer ɗin Sapphire mai inci 6 mai girman 156mm 159mm don ɗaukar kaya na C-Plane DSP TTV
Ƙayyadewa
| Abu | Wafers ɗin Sapphire mai inci 6 (0001) | |
| Kayan Lu'ulu'u | 99,999%, Tsarkakakken Tsabta, Monocrystalline Al2O3 | |
| Matsayi | Firayim, Epi-Ready | |
| Tsarin Fuskar | Jirgin sama na C(0001) | |
| Kusurwar C-jirgin sama daga kusurwa zuwa ga axis na M 0.2 +/- 0.1° | ||
| diamita | 100.0 mm +/- 0.1 mm | |
| Kauri | 650 μm +/- 25 μm | |
| Babban Tsarin Faɗi | C-jirgin sama(00-01) +/- 0.2° | |
| An goge Gefe Guda ɗaya | Fuskar Gaba | An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM) |
| (SSP) | Bayan Fuskar | Ƙasa mai kyau, Ra = 0.8 μm zuwa 1.2 μm |
| An goge Gefen Biyu | Fuskar Gaba | An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM) |
| (DSP) | Bayan Fuskar | An goge shi da ƙarfi, Ra < 0.2 nm (ta AFM) |
| TTV | < 20 μm | |
| RUWAN BAKI | < 20 μm | |
| WARP | < 20 μm | |
| Tsaftacewa / Marufi | Tsaftace ɗaki mai tsafta na aji 100 da kuma marufi na injin tsotsa, | |
| Guda 25 a cikin fakitin kaset ɗaya ko fakitin guda ɗaya. | ||
A halin yanzu kamfanoni da yawa a China suna amfani da hanyar Kylopoulos (hanyar KY) don samar da lu'ulu'u masu launin shuɗi don amfani a masana'antar lantarki da na gani.
A cikin wannan tsari, ana narkar da sinadarin aluminum oxide mai tsafta a cikin tukunyar ruwa a yanayin zafi sama da digiri 2100 na Celsius. Yawanci, ana yin tukunyar ruwa ne da tungsten ko molybdenum. Ana nutsar da lu'ulu'u iri mai daidaitacce a cikin alumina mai narkewa. Ana jan lu'ulu'u iri a hankali sama kuma ana iya juyawa a lokaci guda. Ta hanyar daidaita yanayin zafi, saurin jan ruwa da kuma saurin sanyaya, ana iya samar da babban ingot mai lu'ulu'u ɗaya, kusan silinda daga narkewar.
Bayan an girma da ƙusoshin lu'ulu'u guda ɗaya, ana haƙa su cikin sandunan silinda, waɗanda daga nan ake yanke su zuwa kauri da ake so a tagar sannan a ƙarshe a goge su zuwa saman da ake so.
Cikakken Zane





