12 inch SiC Substrate N Nau'in Babban Girma Babban Ayyukan RF Aikace-aikacen

12 inch Nau'in SiC Substrate N Nau'in Babban Girma Babban Ayyukan Ayyukan RF Featured Hoton

Takaitaccen Bayani:

Tsarin SiC mai inci 12 yana wakiltar ci gaba mai ban sha'awa a cikin fasahar kayan aikin semiconductor, yana ba da fa'idodi masu canzawa don kayan lantarki da aikace-aikacen mitoci masu girma. A matsayin mafi girman tsarin masana'antar siliki carbide wafer na masana'antu, sikelin inch 12 na SiC yana ba da damar tattalin arzikin da ba a taɓa ganin irinsa ba yayin da yake riƙe fa'idodin abubuwan da ke tattare da fa'idodin bandgap mai faɗi da keɓaɓɓen kaddarorin thermal. Idan aka kwatanta da na al'ada 6-inch ko ƙarami SiC wafers, dandali 12-inch yana ba da sama da 300% ƙarin yanki da ake amfani da shi a kowace wafer, yana haɓaka yawan amfanin ƙasa da rage farashin masana'anta don na'urorin wuta. Wannan girman girman mizanin yana nuna tarihin juyin halitta na wafers na silicon, inda kowane haɓakar diamita ya kawo raguwar farashi mai mahimmanci da haɓaka aiki. 12-inch SiC Substrate's in thermal conductivity's thermal conductivity (kusan 3 × na silicon) da kuma babban ƙarfin fashewar filin ya sa ya zama mai mahimmanci musamman ga tsarin abin hawa na lantarki na 800V na gaba, inda yake ba da damar ƙarami da ingantattun na'urori masu ƙarfi. A cikin abubuwan more rayuwa na 5G, babban saurin jikewa na kayan lantarki yana ba na'urorin RF damar yin aiki a mitoci mafi girma tare da ƙananan asara. Daidaituwar ma'auni tare da gyare-gyaren kayan aikin masana'anta na silicon shima yana sauƙaƙe ɗaukar hoto ta hanyar fas ɗin da ke akwai, kodayake ana buƙatar kulawa ta musamman saboda tsananin taurin SiC (9.5 Mohs). Yayin da adadin samarwa ya karu, 12-inch SiC substrate ana tsammanin ya zama ma'aunin masana'antu don aikace-aikacen manyan ƙarfi, haɓaka sabbin abubuwa a cikin keɓaɓɓun kera, sabunta makamashi, da tsarin jujjuya wutar masana'antu.

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Cikakken Bayani

Tags samfurin

Siffofin fasaha

12 inch Silicon Carbide (SiC) Ƙididdigar Substrate
Daraja		Samfuran ZeroMPD Daraja (Z Grade)	Standard Production Daraja (P Grade)		Dummy Grade (D Grade)
Diamita		3 00mm ~ 1305mm
Kauri	4 H-N	750μm± 15 μm	750μm± 25 μm
	4H-SI	750μm± 15 μm	750μm± 25 μm
Wafer Orientation		Kashe axis: 4.0° zuwa <1120>±0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI
Maƙarƙashiya Maɗaukaki	4 H-N	≤0.4cm-2	≤4cm-2		25cm-2
	4H-SI	≤5cm-2	≤10cm-2		25cm-2
Resistivity	4 H-N	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Hannun Filayen Firamare		{10-10} ± 5.0°
Tsawon Fitowa na Farko	4 H-N	N/A
	4H-SI	Daraja
Ƙarƙashin Ƙarfi		3 mm ku
LTV/TTV/Baka/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Tashin hankali		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.2 nm			≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara Hex Plates Ta Babban Haske mai ƙarfi Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi Haɗin Carbon Na gani Silicon Surface Scratches By High Intensity Light		Babu Tarin yanki ≤0.05% Babu Tarin yanki ≤0.05% Babu			Tsayin tarawa ≤ 20 mm, tsayi ɗaya≤2 mm Tarin yanki ≤0.1% Tarin yanki≤3% Tarin yanki ≤3% Tsayin tarawa≤1× diamita wafer
Chips Gefe Ta Babban Haske mai ƙarfi		Babu wanda aka halatta ≥0.2mm nisa da zurfinsa			7 izini, ≤1 mm kowanne
(TSD) Rushewar dunƙulewar zare		≤500 cm-2		N/A
(BPD) Tushe jirgin sama		≤1000 cm-2		N/A
Lalacewar Silicon Surface Ta Babban Haske mai ƙarfi		Babu
Marufi		Cassette mai yawa-wafer ko kwantena wafer guda ɗaya
Bayanan kula:
1 Iyakoki na lahani sun shafi gaba dayan saman wafer ban da yankin keɓe gefen. 2Ya kamata a duba karce a fuskar Si kawai. 3 Bayanin ɓarna daga KOH etched wafers ne kawai.

Mabuɗin Siffofin

1. Babban Fa'idar Girman Girma: Tsarin SiC na 12-inch (12-inch silicon carbide substrate) yana ba da mafi girman yanki guda-wafer, yana ba da damar ƙarin kwakwalwan kwamfuta da za a iya samarwa ta kowace wafer, ta haka rage farashin masana'anta da haɓaka yawan amfanin ƙasa.
2. Babban Ayyukan Ayyuka: Silicon carbide's high-zazzabi juriya da kuma babban rushewar filin ƙarfin sa 12-inch substrate manufa domin high-voltage da kuma high-mita aikace-aikace, irin su EV inverters da sauri-caji tsarin.
3. Daidaitawar Gudanarwa: Duk da babban tauri da ƙalubalen sarrafawa na SiC, 12-inch SiC substrate yana samun ƙananan lahani ta hanyar ingantattun dabarun yankewa da gogewa, haɓaka yawan amfanin na'urar.
4.

Babban Aikace-aikace

1. Electric Vehicles: SiC substrate na 12-inch (12-inch silicon carbide substrate) wani muhimmin sashi ne na tsarin tafiyar da wutar lantarki na gaba, yana ba da damar inverters masu inganci waɗanda ke haɓaka kewayon da rage lokacin caji.

2. 5G Base Stations: Manyan SiC substrates suna tallafawa manyan na'urorin RF masu tsayi, suna biyan buƙatun tashoshin tushe na 5G don babban iko da ƙarancin asara.

3.Industrial Power Supplies: A cikin hasken rana inverters da kaifin baki grids, da 12-inch substrate iya jure mafi girma voltages yayin da minimizing makamashi hasãra.

4.Consumer Electronics: Masu caja masu sauri na gaba da samar da wutar lantarki na cibiyar bayanai na iya ɗaukar 12-inch SiC substrates don cimma ƙananan girman da inganci mafi girma.

Ayyukan XKH

Mun ƙware a cikin ayyukan sarrafawa na musamman don 12-inch SiC substrates (12-inch silicon carbide substrates), gami da:
1. Dicing & Polishing: Low-lalacewa, high-flatness substrate aiki wanda aka kera don abokin ciniki bukatun, tabbatar da barga na'urar yi.
2. Taimakon Ci gaban Epitaxial: Babban ingancin sabis na wafer na epitaxial don haɓaka masana'antar guntu.
3. Ƙirƙirar Ƙwararrun Batch: Yana goyan bayan ingantaccen R&D don cibiyoyin bincike da masana'antu, rage hawan ci gaba.
4. Technical Consulting: Ƙarshe-zuwa-ƙarshen mafita daga zaɓin kayan aiki don aiwatar da ingantawa, taimaka wa abokan ciniki su shawo kan kalubalen sarrafa SiC.
Ko don samarwa da yawa ko keɓancewa na musamman, sabis ɗin mu na 12-inch na SiC ya dace da bukatun aikin ku, yana ƙarfafa ci gaban fasaha.