12 inch SiC substrate Diamita 300mm Kauri 750μm 4H-N Nau'in za a iya musamman

12 inch SiC substrate Diamita 300mm Kauri 750μm 4H-N Nau'in za a iya keɓance Hoton da aka Haɓaka

Takaitaccen Bayani:

A wani muhimmin lokaci a cikin canjin masana'antar semiconductor zuwa ingantacciyar ingantacciyar mafita da ƙaƙƙarfan mafita, fitowar ɓangarorin SiC mai inci 12 (12-inch silicon carbide substrate) ya canza yanayin da gaske. Idan aka kwatanta da ƙayyadaddun ƙayyadaddun inci 6-inch da 8-inch na gargajiya, fa'idar girman girman inch 12 yana ƙara adadin kwakwalwan kwamfuta da aka samar da wafer fiye da ninki huɗu. Bugu da ƙari, farashin rukunin 12-inch SiC substrate an rage shi da 35-40% idan aka kwatanta da na yau da kullun 8-inch, wanda ke da mahimmanci ga yaduwar samfuran ƙarshen.
Ta hanyar amfani da fasahar haɓakar haɓakar tururin mu ta mallaka, mun sami nasarar sarrafa masana'antu kan yawan rarrabuwar kawuna a cikin lu'ulu'u 12-inch, suna ba da tushe na musamman don kera na'urar ta gaba. Wannan ci gaban yana da mahimmanci musamman a cikin ƙarancin guntu na duniya a halin yanzu.

Maɓalli na na'urorin wuta a aikace-aikacen yau da kullun-kamar tashoshin caji mai sauri na EV da tashoshi na 5G-suna ƙara ɗaukar wannan babban yanki mai girma. Musamman a cikin matsanancin zafin jiki, babban ƙarfin lantarki, da sauran munanan yanayin aiki, 12-inch SiC substrate yana nuna kwanciyar hankali mafi girma idan aka kwatanta da kayan tushen silicon.

Aika mana imel

Cikakken Bayani

Tags samfurin

Siffofin fasaha

12 inch Silicon Carbide (SiC) Ƙididdigar Substrate
Daraja		Samfuran ZeroMPD Daraja (Z Grade)	Standard Production Daraja (P Grade)		Dummy Grade (D Grade)
Diamita		3 00mm ~ 1305mm
Kauri	4 H-N	750μm± 15 μm	750μm± 25 μm
	4H-SI	750μm± 15 μm	750μm± 25 μm
Wafer Orientation		Kashe axis: 4.0° zuwa <1120>±0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI
Maƙarƙashiya Maɗaukaki	4 H-N	≤0.4cm-2	≤4cm-2		25cm-2
	4H-SI	≤5cm-2	≤10cm-2		25cm-2
Resistivity	4 H-N	0.015 ~ 0.024 Ω · cm			0.015 ~ 0.028 Ω · cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Hannun Filayen Firamare		{10-10} ± 5.0°
Tsawon Fitowa na Farko	4 H-N	N/A
	4H-SI	Daraja
Ƙarƙashin Ƙarfi		3 mm ku
LTV/TTV/Baka/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Tashin hankali		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.2 nm			≤0.5 nm
Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara Hex Plates Ta Babban Haske mai ƙarfi Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi Haɗin Carbon Na gani Silicon Surface Scratches By High Intensity Light		Babu Tarin yanki ≤0.05% Babu Tarin yanki ≤0.05% Babu			Tsayin tarawa ≤ 20 mm, tsayi ɗaya≤2 mm Tarin yanki ≤0.1% Tarin yanki≤3% Tarin yanki ≤3% Tsayin tarawa≤1× diamita wafer
Chips Gefe Ta Babban Haske mai ƙarfi		Babu wanda aka halatta ≥0.2mm nisa da zurfinsa			7 izini, ≤1 mm kowanne
(TSD) Rushewar dunƙulewar zare		≤500 cm-2		N/A
(BPD) Tushe jirgin sama		≤1000 cm-2		N/A
Lalacewar Silicon Surface Ta Babban Haske mai ƙarfi		Babu
Marufi		Cassette mai yawa-wafer ko kwantena wafer guda ɗaya
Bayanan kula:
1 Iyakoki na lahani sun shafi gaba dayan saman wafer ban da yankin keɓe gefen. 2Ya kamata a duba karce a fuskar Si kawai. 3 Bayanin ɓarna daga KOH etched wafers ne kawai.

Mabuɗin Siffofin

1.Production Capacity da Cost Advantages: The taro samar da 12-inch SiC substrate (12-inch silicon carbide substrate) alama wani sabon zamani a semiconductor masana'antu. Adadin kwakwalwan kwamfuta da ake samu daga wafer guda ya kai sau 2.25 fiye da na 8-inch substrates, kai tsaye yana haifar da tsalle-tsalle cikin ingancin samarwa. Ra'ayin abokin ciniki yana nuna cewa ɗaukar matakan inch 12 ya rage farashin samar da wutar lantarki da kashi 28%, yana haifar da fa'ida mai fa'ida a cikin kasuwar da ke fama da rikici.
2.Fitattun Abubuwan Jiki: Substrate SiC mai inch 12 ya gaji duk fa'idodin silicon carbide abu - halayen zafinsa shine sau 3 na silicon, yayin da raunin filin sa ya kai sau 10 na silicon. Waɗannan halayen suna ba da damar na'urorin da suka dogara da 12-inch substrates suyi aiki a tsaye a cikin yanayin zafi sama da 200 ° C, yana sa su dace musamman don aikace-aikacen buƙatu kamar motocin lantarki.
3.Surface Jiyya Technology: Mun ɓullo da wani labari sinadaran inji polishing (CMP) tsari musamman ga 12-inch SiC substrates, cimma atomic-matakin surface flatness (Ra <0.15nm). Wannan ci gaban ya warware ƙalubalen duniya na babban diamita silicon carbide wafer saman jiyya, share cikas ga high quality epitaxial girma.
4.Thermal Management Performance: A aikace-aikace masu amfani, 12-inch SiC substrates nuna gagarumin zafi dissipability capabilities. Bayanan gwaji sun nuna cewa a ƙarƙashin ƙarfin ƙarfin iri ɗaya, na'urorin da ke amfani da ma'aunin inci 12 suna aiki a yanayin zafi 40-50 ° C ƙasa da na'urorin tushen silicon, suna haɓaka rayuwar sabis na kayan aiki sosai.

Babban Aikace-aikace

1.New Energy Vehicle Ecosystem: The 12-inch SiC substrate (12-inch silicon carbide substrate) yana juyin juya halin lantarki abin hawa powertrain gine. Daga caja na onboard (OBC) zuwa manyan injin inverters da tsarin sarrafa baturi, ingantattun ingantattun inci 12-inch sun haɓaka kewayon abin hawa da kashi 5-8%. Rahotanni daga babban mai kera kera motoci sun nuna cewa ɗaukar kayan aikin mu na inci 12 ya rage asarar makamashi a cikin tsarin cajin su da kashi 62%.
2.Sassan Makamashi Renewable: A cikin tashoshin wutar lantarki na photovoltaic, inverters bisa 12-inch SiC substrates ba wai kawai suna nuna ƙananan nau'ikan nau'ikan nau'ikan ba amma har ma sun sami ingantaccen juzu'i wanda ya wuce 99%. Musamman a cikin yanayin tsararraki da aka rarraba, wannan babban inganci yana fassara zuwa tanadin dubban daruruwan yuan na shekara-shekara na asarar wutar lantarki ga masu aiki.
3.Industrial Automation: Masu juyawa na mita da ke amfani da 12-inch substrates suna nuna kyakkyawan aiki a cikin masana'antun masana'antu, kayan aikin CNC, da sauran kayan aiki. Halayen canjin mitoci masu tsayi suna haɓaka saurin amsa motar da kashi 30% yayin da rage tsangwama na lantarki zuwa kashi ɗaya bisa uku na mafita na al'ada.
4.Consumer Electronics Innovation: Na gaba-tsara wayoyi masu saurin cajin fasahar zamani sun fara ɗaukar kayan aikin SiC mai inci 12. Ana hasashen cewa samfuran caji da sauri sama da 65W za su jujjuya gabaɗaya zuwa mafita na silicon carbide, tare da 12-inch substrates suna fitowa azaman mafi kyawun zaɓin ayyuka.

Sabis na Musamman na XKH don 12-inch Substrate SiC

Don saduwa da takamaiman buƙatu don 12-inch SiC substrates (12-inch silicon carbide substrates), XKH yana ba da cikakken tallafin sabis:
1.Tsarin Kauri:
Mun samar da 12-inch substrates a daban-daban kauri bayani dalla-dalla ciki har da 725μm saduwa daban-daban aikace-aikace bukatun.
2. Doping maida hankali:
Masana'antar mu tana goyan bayan nau'ikan haɓakawa da yawa gami da nau'in n-type da nau'in p-type, tare da madaidaicin ikon juriya a cikin kewayon 0.01-0.02Ω · cm.
3. Ayyukan Gwaji:
Tare da cikakkun kayan gwajin matakin wafer, muna ba da cikakkun rahotannin dubawa.
XKH ya fahimci cewa kowane abokin ciniki yana da buƙatu na musamman don 12-inch SiC substrates. Don haka muna ba da samfuran haɗin gwiwar kasuwanci masu sassauƙa don samar da mafi kyawun mafita, ko don:
Samfuran R&D
· Siyayyar samar da ƙara
Ayyukanmu na musamman sun tabbatar da cewa za mu iya saduwa da takamaiman fasaha da buƙatun samarwa don 12-inch SiC substrates.