Ana iya keɓance nau'in SiC mai inci 12 Diamita 300mm Kauri 750μm 4H-N Nau'in

Takaitaccen Bayani:

A wani muhimmin lokaci na sauyin masana'antar semiconductor zuwa ga mafi inganci da ƙananan mafita, fitowar substrate SiC mai inci 12 (substrate silicon carbide mai inci 12) ya canza yanayin ƙasa sosai. Idan aka kwatanta da ƙayyadaddun bayanai na gargajiya na inci 6 da inci 8, babban fa'idar substrate mai inci 12 yana ƙara yawan guntu da ake samarwa a kowace wafer da fiye da ninki huɗu. Bugu da ƙari, farashin naúrar substrate SiC mai inci 12 ya ragu da kashi 35-40% idan aka kwatanta da substrates na yau da kullun na inci 8, wanda yake da mahimmanci don ɗaukar samfuran ƙarshe sosai.
Ta hanyar amfani da fasaharmu ta haɓaka sufuri ta tururi, mun sami nasarar sarrafa yawan gurɓatattun abubuwa a cikin lu'ulu'u masu inci 12 a cikin masana'antu, wanda ke ba da tushe mai kyau ga kera na'urori masu zuwa. Wannan ci gaban yana da mahimmanci musamman a tsakanin ƙarancin guntu na duniya a yanzu.

Na'urorin samar da wutar lantarki masu mahimmanci a aikace-aikacen yau da kullun—kamar tashoshin caji mai sauri na EV da tashoshin tushe na 5G—suna ƙara ɗaukar wannan babban substrate. Musamman a cikin yanayin zafi mai yawa, ƙarfin lantarki mai yawa, da sauran yanayi masu wahala, substrate SiC mai inci 12 yana nuna kwanciyar hankali mafi kyau idan aka kwatanta da kayan da aka yi da silicon.

Aika mana imel

Siffofi

Sigogi na fasaha

Bayanin Silinda Mai Inci 12 (SiC)
Matsayi		Samar da ZeroMPD Maki (Maki Z)	Tsarin Samarwa na Daidaitacce Maki (Maki na P)		Daraja ta Karya (Mataki na D)
diamita		30 0 mm ~ 1305mm
Kauri	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Tsarin Wafer		A gefen axis: 4.0° zuwa <1120 >±0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI
Yawan bututun micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Juriya	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Babban Tsarin Faɗi		{10-10} ±5.0°
Babban Tsawon Lebur	4H-N	Ba a Samu Ba
	4H-SI	Notch
Keɓewa a Gefen		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Taurin kai		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Fashewar Gefen Ta Hanyar Haske Mai Tsanani Faranti na Hex ta Haske Mai Tsanani Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi Abubuwan da ke tattare da Carbon na gani Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani		Babu Yankin da aka tara ≤0.05% Babu Yankin da aka tara ≤0.05% Babu			Tsawon jimilla ≤ 20 mm, tsawonsa ɗaya ≤ 2 mm Yankin da aka tara ≤0.1% Yankin da aka tara≤3% Yankin da aka tara ≤3% Tsawon jimla ≤1 × diamita na wafer
Ƙwayoyin Gefen Ta Haske Mai Tsanani		Babu wanda aka yarda da faɗin da zurfin ≥0.2mm			An yarda da 7, ≤1 mm kowanne
(TSD) Rushewar sukurori mai zare		≤500 cm-2		Ba a Samu Ba
(BPD) Rushewar jirgin sama na tushe		≤1000 cm-2		Ba a Samu Ba
Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani		Babu
Marufi		Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya
Bayanan kula:
1 Iyakokin lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. 2Ya kamata a duba ƙurajen a fuskar Si kawai. 3 Bayanan rabuwar wuri daga wafers ɗin KOH ne kawai.

Mahimman Sifofi

1. Ƙarfin Samarwa da Fa'idodin Kuɗi: Yawan samar da substrate SiC mai inci 12 (substrate silicon carbide mai inci 12) ya nuna sabon zamani a masana'antar semiconductor. Adadin guntu da ake samu daga wafer guda ɗaya ya kai sau 2.25 fiye da substrate mai inci 8, wanda hakan ke haifar da ci gaba kai tsaye a ingancin samarwa. Ra'ayoyin abokan ciniki sun nuna cewa ɗaukar substrate mai inci 12 ya rage farashin samar da module ɗin wutar lantarki da kashi 28%, wanda hakan ya haifar da babban fa'ida a kasuwar da ake fafatawa sosai.
2. Halayen Jiki Masu Kyau: SiC substrate mai inci 12 yana gaji dukkan fa'idodin kayan silicon carbide - ƙarfin zafinsa ya ninka na silicon sau uku, yayin da ƙarfin filin lalacewa ya kai sau 10 na silicon. Waɗannan halaye suna ba wa na'urori waɗanda aka yi da substrates mai inci 12 damar yin aiki cikin kwanciyar hankali a cikin yanayin zafi mai yawa wanda ya wuce 200°C, wanda hakan ya sa suka dace musamman don aikace-aikace masu wahala kamar motocin lantarki.
3. Fasahar Gyaran Sama: Mun ƙirƙiro wani sabon tsari na goge sinadarai na injiniya (CMP) musamman don ƙananan SiC masu inci 12, wanda ya kai matakin atom (Ra<0.15nm). Wannan ci gaban ya magance ƙalubalen da ake fuskanta a duniya na maganin silicon carbide wafer mai girman diamita, yana kawar da cikas ga ci gaban epitaxial mai inganci.
4. Aikin Gudanar da Zafi: A aikace-aikace na zahiri, substrates SiC masu inci 12 suna nuna ƙwarewar watsa zafi mai ban mamaki. Bayanan gwaji sun nuna cewa a ƙarƙashin ƙarfin wutar lantarki iri ɗaya, na'urori masu amfani da substrates masu inci 12 suna aiki a yanayin zafi 40-50°C ƙasa da na'urorin da ke da silicon, wanda hakan ke ƙara tsawon rayuwar kayan aiki sosai.

Babban Aikace-aikace

1. Sabon Tsarin Motocin Makamashi: Tsarin SiC mai inci 12 (silicon carbide substrate mai inci 12) yana kawo sauyi a tsarin tsarin powertrain na ababen hawa na lantarki. Daga na'urorin caji na cikin gida (OBC) zuwa na'urorin inverters na manyan motoci da tsarin sarrafa batir, ingantattun ayyukan da substrates masu inci 12 suka kawo suna ƙara yawan abin hawa da kashi 5-8%. Rahotanni daga wani babban kamfanin kera motoci sun nuna cewa amfani da substrates masu inci 12 ya rage asarar makamashi a tsarin caji mai sauri da kashi 62%.
2. Sashen Makamashi Mai Sabuntawa: A cikin tashoshin wutar lantarki na photovoltaic, inverters waɗanda aka gina bisa ga substrates na SiC mai inci 12 ba wai kawai suna da ƙananan abubuwan tsari ba, har ma suna samun ingantaccen juyi fiye da kashi 99%. Musamman a cikin yanayin samar da wutar lantarki da aka rarraba, wannan babban inganci yana nufin tanadin ɗaruruwan dubban yuan na shekara-shekara a asarar wutar lantarki ga masu aiki.
3. Atomatik na Masana'antu: Masu sauya mita ta amfani da substrates masu inci 12 suna nuna kyakkyawan aiki a cikin robots na masana'antu, kayan aikin injin CNC, da sauran kayan aiki. Halayen sauyawar mitar su na zamani suna inganta saurin amsawar mota da kashi 30% yayin da suke rage tsangwama ta lantarki zuwa kashi ɗaya bisa uku na mafita na yau da kullun.
4. Kirkirar Kayan Lantarki na Masu Amfani: Fasahar caji mai sauri ta zamani ta wayoyin komai da ruwanka ta fara amfani da na'urorin SiC masu inci 12. Ana hasashen cewa kayayyakin caji mai sauri sama da 65W za su canza zuwa mafita na silicon carbide, tare da na'urorin substrates masu inci 12 da ke fitowa a matsayin mafi kyawun zaɓi don aiki da farashi.

Ayyukan Musamman na XKH don Substrate SiC na inci 12

Domin biyan takamaiman buƙatu na substrates SiC mai inci 12 (substrates na silicon carbide mai inci 12), XKH yana ba da cikakken tallafin sabis:
1. Keɓancewa da Kauri:
Muna samar da ƙananan abubuwa masu inci 12 a cikin takamaiman kauri daban-daban, gami da 725μm don biyan buƙatun aikace-aikace daban-daban.
2. Yawan shan kwayoyi:
Masana'antarmu tana tallafawa nau'ikan conductivity da yawa, gami da nau'in n-type da nau'in p, tare da daidaitaccen ikon sarrafa juriya a cikin kewayon 0.01-0.02Ω·cm.
3. Ayyukan Gwaji:
Tare da cikakken kayan aikin gwaji na matakin wafer, muna samar da cikakkun rahotannin dubawa.
XKH ta fahimci cewa kowane abokin ciniki yana da buƙatu na musamman don substrates na SiC mai inci 12. Saboda haka muna ba da samfuran haɗin gwiwar kasuwanci masu sassauƙa don samar da mafita mafi gasa, ko don:
· Samfuran Bincike da Ƙwarewa
· Sayen kayan da aka samar da yawa
Ayyukanmu na musamman suna tabbatar da cewa za mu iya biyan buƙatunku na fasaha da samarwa na musamman don substrates SiC na inci 12.