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Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR

Wafer mai inci 12 mai siffar 4H-SiC don gilashin AR Hoton da aka Fito
  • Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR
  • Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR
  • Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR
  • Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR
  • Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR

Takaitaccen Bayani:

TheSubstrate mai inci 12 mai aiki da injin 4H-SiC (silicon carbide)wani wafer ne mai faɗi-bandgap semiconductor mai girman gaske wanda aka ƙera don ƙarni na gabababban ƙarfin lantarki, babban ƙarfi, babban mita, da kuma babban zafin jikiƙera na'urorin lantarki masu amfani da wutar lantarki. Amfani da fa'idodin da ke tattare da SiC—kamarbabban filin lantarki mai mahimmanci, babban saurin juyewar electron mai cike da sinadarai, babban ƙarfin lantarki na thermal, kumakyakkyawan kwanciyar hankali na sinadarai- an sanya wannan substrate a matsayin kayan aiki na asali don dandamalin na'urorin wutar lantarki masu ci gaba da aikace-aikacen wafer mai girma.


Siffofi

Cikakken Zane

Wafer mai inci 12 mai girman inci 4H-SiC
Wafer mai inci 12 mai girman inci 4H-SiC

Bayani

TheSubstrate mai inci 12 mai aiki da injin 4H-SiC (silicon carbide)wani wafer ne mai faɗi-bandgap semiconductor mai girman gaske wanda aka ƙera don ƙarni na gabababban ƙarfin lantarki, babban ƙarfi, babban mita, da kuma babban zafin jikiƙera na'urorin lantarki masu amfani da wutar lantarki. Amfani da fa'idodin da ke tattare da SiC—kamarbabban filin lantarki mai mahimmanci, babban saurin juyewar electron mai cike da sinadarai, babban ƙarfin lantarki na thermal, kumakyakkyawan kwanciyar hankali na sinadarai- an sanya wannan substrate a matsayin kayan aiki na asali don dandamalin na'urorin wutar lantarki masu ci gaba da aikace-aikacen wafer mai girma.

Don biyan buƙatun masana'antu na gaba ɗayarage farashi da inganta yawan aiki, sauyawa daga babban al'amariSiC inci 6–8 to SiC inci 12Ana sane da ƙananan abubuwa a matsayin babbar hanya. Wafer mai inci 12 yana ba da yanki mai girma fiye da ƙananan tsare-tsare, wanda ke ba da damar samar da mafi girman fitarwa na kowane wafer, inganta amfani da wafer, da kuma rage yawan asarar gefuna - ta haka yana tallafawa haɓaka farashin masana'antu gabaɗaya a cikin sarkar samar da kayayyaki.

Hanyar Girman Crystal da Ƙirƙirar Wafer

 

Ana samar da wannan substrate mai inci 12 mai amfani da injin 4H-SiC ta hanyar cikakken rufe sarkar tsari.faɗaɗa iri, girma mai lu'ulu'u ɗaya, wafe, rage sirara, da gogewa, bin ƙa'idodin masana'antar semiconductor na yau da kullun:

 

  • Faɗaɗa iri ta hanyar Jirgin Ruwa na Physical Vapor (PVT):
    Inci 12Kwalta iri ta 4H-SiCAna samunsa ta hanyar faɗaɗa diamita ta amfani da hanyar PVT, wanda ke ba da damar haɓaka boules masu sarrafa 4H-SiC masu inci 12 daga baya.

  • Girman lu'ulu'u guda ɗaya mai aiki da 4H-SiC:
    Mai amfani da wutar lantarkin⁺ 4H-SiCAna samun ci gaban lu'ulu'u ɗaya ta hanyar shigar da nitrogen cikin yanayin girma don samar da maganin da aka sarrafa don bayarwa.

  • ƙera wafer (tsarin sarrafa semiconductor na yau da kullun):
    Bayan siffanta boule, ana samar da wafers ta hanyaryanka laser, sai kumarage zafi, gogewa (gami da kammala matakin CMP), da tsaftacewa.
    Kauri daga substrate shine560 μm.

 

An tsara wannan tsarin haɗin gwiwa don tallafawa ci gaba mai ɗorewa a diamita mai girma sosai yayin da ake kiyaye daidaiton kristal da kuma daidaiton halayen lantarki.

 

sic wafer 9

 

Don tabbatar da cikakken kimantawa mai inganci, ana amfani da kayan aikin duba lahani ta amfani da haɗin kayan aikin gini, na gani, na lantarki, da na'urori masu zuwa:

 

  • Raman spectroscopy (taswirar yanki):tabbatar da daidaiton nau'in polytype a fadin wafer

  • Cikakken sarrafa na'urar hangen nesa ta atomatik (taswirar wafer):ganowa da kimantawa na ƙananan bututu

  • Tsarin nazarin juriyar da ba ta taɓawa ba (taswirar wafer):Rarraba juriya a wurare da yawa na aunawa

  • Rarraba hasken X-ray mai ƙuduri mai girma (HRXRD):kimanta ingancin kristal ta hanyar ma'aunin lanƙwasa mai girgiza

  • Dubawar katsewar wuri (bayan an zaɓi fenti):kimanta yawan katsewar wuri da kuma yanayin halittarsa ​​(tare da mai da hankali kan katsewar dunkule)

 

sic wafer 10

Babban Sakamakon Aiki (Wakili)

Sakamakon siffofi ya nuna cewa substrate mai inci 12 mai aiki da injin 4H-SiC yana nuna ingantaccen ingancin abu a cikin mahimman sigogi:

(1) Tsarkakakken nau'in da daidaito

  • Taswirar yankin Raman tana nunaRufin polytype 4H-SiC 100%a fadin substrate.

  • Ba a gano haɗakar wasu nau'ikan polytypes ba (misali, 6H ko 15R), wanda ke nuna kyakkyawan ikon sarrafa polytypes a sikelin inci 12.

(2) Yawan bututun micro (MPD)

  • Taswirar microscopy na sikelin Wafer yana nunaYawan bututun micro < 0.01 cm⁻², yana nuna ingantaccen danne wannan nau'in lahani mai iyakance na'urar.

(3) Juriyar lantarki da daidaito

  • Taswirar juriyar da ba ta taɓawa ba (ma'aunin maki 361) yana nuna:

    • Tsarin juriya:20.5–23.6 mΩ·cm

    • Matsakaicin juriya:22.8 mΩ·cm

    • Rashin daidaito:< 2%
      Waɗannan sakamakon suna nuna kyakkyawan daidaiton haɗakar ƙwayoyin halitta da kuma daidaiton wutar lantarki mai kyau na sikelin wafer.

(4) Ingancin lu'ulu'u (HRXRD)

  • Ma'aunin lanƙwasa mai jujjuyawa na HRXRD akan(004) tunani, an ɗauka amaki biyartare da alkiblar diamita na wafer, nuna:

    • Kololuwa ɗaya, kusan daidaitacce ba tare da ɗabi'ar kololuwa da yawa ba, wanda ke nuna rashin fasalulluka na iyakokin ƙananan kusurwa.

    • Matsakaicin FWHM:20.8 arcsec (″), yana nuna ingancin kristal mai girma.

(5) Yawan katsewar sikirin (TSD)

  • Bayan an zaɓi zaɓi da kuma duba ta atomatik, an shigar da shirin,Yawan katsewar dunƙuleana auna shi a2 cm⁻², yana nuna ƙarancin TSD a sikelin inci 12.

Kammalawa daga sakamakon da ke sama:
Substrate yana nunaKyakkyawan tsarkin nau'in polytype 4H, ƙarancin yawan micropipe, tsayayye kuma iri ɗaya, ƙarancin juriya, ƙarfin kristal mai ƙarfi, da ƙarancin yawan dislocation, yana tallafawa dacewarsa ga kera na'urori na zamani.

Darajar Samfuri da Fa'idodi

  • Yana ba da damar ƙaura masana'antar SiC mai inci 12
    Yana samar da dandamali mai inganci wanda ya dace da taswirar masana'antu don kera wafer SiC mai inci 12.

  • Ƙananan lahani mai yawa don inganta yawan amfanin na'ura da aminci
    Ƙananan yawan bututun micro da ƙarancin yawan nakasa suna taimakawa wajen rage mummunan tasirin asarar amfanin gona da kuma hanyoyin rage yawan amfanin gona.

  • Kyakkyawan daidaiton lantarki don kwanciyar hankali na tsari
    Rarraba juriya mai ƙarfi yana tallafawa ingantaccen wafer-zuwa-wafer da kuma daidaiton na'urar a cikin wafer.

  • Babban ingancin kristal yana tallafawa aikin epitaxy da na'urar
    Sakamakon HRXRD da rashin sa hannun ƙananan kusurwa na hatsi yana nuna kyakkyawan ingancin kayan don haɓakar epitaxial da ƙera na'urori.

 

Manufa Aikace-aikace

Substrate mai inci 12 mai amfani da wutar lantarki 4H-SiC ya dace da:

  • Na'urorin wutar lantarki na SiC:MOSFETs, Schottky barrier diodes (SBD), da kuma tsarin da ya shafi hakan

  • Motocin lantarki:manyan inverters na jan hankali, caja a cikin jirgin (OBC), da masu canza DC-DC

  • Makamashi mai sabuntawa & grid:masu amfani da wutar lantarki ta photovoltaic, tsarin adana makamashi, da kuma na'urorin grid masu wayo

  • Masana'antar lantarki ta lantarki:kayan wutar lantarki masu inganci, tuƙi na motoci, da masu sauya wutar lantarki masu ƙarfi

  • Bukatun wafer masu tasowa masu tasowa:marufi mai ci gaba da sauran yanayin masana'antu na semiconductor masu jituwa da inci 12

 

Tambayoyin da ake yawan yi - Substrate mai amfani da inci 12 mai amfani da 4H-SiC

T1. Wane irin SiC substrate ne wannan samfurin?

A:
Wannan samfurin shineMai inci 12 mai sarrafa wutar lantarki (nau'in n⁺) mai siffar lu'ulu'u guda ɗaya mai 4H-SiC, an haɓaka shi ta hanyar hanyar Physical Vapor Transport (PVT) kuma an sarrafa shi ta amfani da dabarun wafe na semiconductor na yau da kullun.

T2. Me yasa ake zaɓar 4H-SiC a matsayin nau'in polytype?

A:
4H-SiC yana ba da mafi kyawun haɗinbabban motsi na electron, faɗaɗɗen bandgita, babban filin fashewa, da kuma ƙarfin lantarki mai zafitsakanin nau'ikan SiC masu dacewa da kasuwanci. Ita ce nau'in polytype mafi rinjaye da ake amfani da shi donna'urorin SiC masu ƙarfin lantarki da ƙarfi mai girma, kamar MOSFETs da Schottky diodes.

T3. Menene fa'idodin ƙaura daga inci 8 zuwa inci 12 na SiC substrates?

A:
Wafer SiC mai inci 12 yana ba da:

  • Muhimmancibabban yanki mai amfani

  • Mafi girman fitarwar mutu a kowace wafer

  • Ƙananan rabon asarar gefe-gefe

  • Ingantaccen daidaito daLayukan masana'antu na semiconductor masu inci 12 masu ci gaba

Waɗannan abubuwan suna ba da gudummawa kai tsaye gaƙarancin farashi ga kowace na'urada kuma ingantaccen aikin masana'antu.

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.

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