Tsarin PVT mai jure wa silicon carbide mai tsayin murhu mai girman inci 6/8/12.

Takaitaccen Bayani:

Tanderu mai jure wa sinadarin silicon carbide (hanyar PVT, hanyar canja wurin tururi ta zahiri) muhimmin kayan aiki ne don haɓaka lu'ulu'u guda ɗaya na silicon carbide (SiC) ta hanyar ƙa'idar sublimation-recrystallization mai zafi. Fasahar tana amfani da dumama juriya (jikin dumama graphite) don rage yawan kayan SiC a zafin jiki mai zafi na 2000 ~ 2500℃, da kuma sake yin amfani da su a yankin ƙarancin zafin jiki (lu'ulu'u iri) don samar da lu'ulu'u guda ɗaya na SiC mai inganci (4H/6H-SiC). Hanyar PVT ita ce babbar hanyar samar da kayan SiC masu yawa na inci 6 ko ƙasa, wanda ake amfani da shi sosai a cikin shirye-shiryen kayan semiconductors masu ƙarfi (kamar MOSFETs, SBD) da na'urorin mitar rediyo (GaN-on-SiC).

Aika mana imel

Siffofi

Ka'idar aiki:

1. Loda kayan da aka ƙera: foda mai tsarki na SiC (ko toshe) da aka sanya a ƙasan graphite crucible (yankin zafi mai yawa).

2. Muhalli na injin tsotsar iska/marasa aiki: yi amfani da injin tsotsar iskar gas (<10⁻³ mbar) ko kuma ka wuce iskar gas mara aiki (Ar).

3. Ƙarfin zafi mai yawa: dumama juriya zuwa 2000 ~ 2500℃, Rarraba SiC cikin Si, Si₂C, SiC₂ da sauran sassan yanayin iskar gas.

4. Yaɗawar yanayin iskar gas: yanayin zafi yana tura yaɗuwar kayan yanayin iskar gas zuwa yankin ƙarancin zafin jiki (ƙarshen iri).

5. Girman lu'ulu'u: Matsayin iskar gas yana sake yin birgima a saman lu'ulu'u na iri kuma yana girma a cikin alkibla tare da axis na C ko A.

Maɓallan mahimmanci:

1. Tsarin zafin jiki: 20~50℃/cm (ƙimar girma da yawan lahani).

2. Matsi: 1~100mbar (ƙarancin matsin lamba don rage ƙazanta).

3. Yawan girma: 0.1~1mm/h (yana shafar ingancin lu'ulu'u da ingancin samarwa).

Babban fasali:

(1) Ingancin lu'ulu'u
Ƙananan lahani: yawan microtubule <1 cm⁻², yawan tarwatsewa 10³~10⁴ cm⁻² (ta hanyar inganta iri da kuma sarrafa tsari).

Sarrafa nau'in polycrystalline: zai iya girma 4H-SiC (babban ruwa), 6H-SiC, 4H-SiC rabo >90% (yana buƙatar sarrafa daidaiton yanayin zafi da rabon stoichiometric na lokacin iskar gas).

(2) Aikin kayan aiki
Babban kwanciyar hankali na zafin jiki: zafin jiki na graphite ya yi zafi fiye da 2500 ℃, jikin tanderu yana ɗaukar ƙirar rufin da yawa (kamar ji na graphite + jaket mai sanyaya ruwa).

Kula da daidaito: Canjin yanayin zafi na axial/radial na ±5 ° C yana tabbatar da daidaiton diamita na lu'ulu'u (ɓacewar kauri na inci 6 <5%).

Mataki na sarrafa kansa: Tsarin sarrafa PLC mai haɗaka, sa ido kan zafin jiki, matsin lamba da ƙimar girma a ainihin lokaci.

(3) Fa'idodin Fasaha
Babban amfani da kayan aiki: ƙimar juyawar kayan aiki > 70% (mafi kyau fiye da hanyar CVD).

Daidaita girman girma: An cimma samar da taro mai inci 6, inci 8 yana cikin matakin haɓakawa.

(4) Amfani da makamashi da farashi
Yawan amfani da wutar lantarki ta murhu ɗaya shine 300 ~ 800kW·h, wanda ya kai kashi 40% ~ 60% na farashin samar da sinadarin SiC.

Zuba jarin kayan aiki yana da yawa (1.5M 3M a kowace naúra), amma farashin substrate naúrar ya yi ƙasa da hanyar CVD.

Manhajoji na asali:

1. Na'urorin lantarki masu ƙarfi: SiC MOSFET substrate don inverter na abin hawa na lantarki da inverter na photovoltaic.

2. Na'urorin Rf: Tashar tushe ta 5G GaN-on-SiC epitaxial substrate (galibi 4H-SiC).

3. Na'urorin muhalli masu matuƙar tsanani: na'urori masu auna zafin jiki da matsin lamba masu yawa don kayan aikin sararin samaniya da makamashin nukiliya.

Sigogi na fasaha:

Ƙayyadewa	Cikakkun bayanai
Girma (L × W × H)	2500 × 2400 × 3456 mm ko kuma a keɓance shi
Diamita Mai Ƙarfi	900 mm
Matsi na Ƙarshen Injin Tsafta	6 × 10⁻⁴ Pa (bayan awa 1.5 na injin tsabtace gida)
Yawan ɗigon ruwa	≤5 Pa/awa 12 (a gasa)
Diamita na Shaft na Juyawa	50 mm
Saurin Juyawa	0.5–5 rpm
Hanyar Dumamawa	Dumama juriya ta lantarki
Matsakaicin Zafin Wutar Lantarki	2500°C
Ƙarfin Dumama	40 kW × 2 × 20 kW
Ma'aunin Zafin Jiki	Pyrometer mai launi biyu-launi infrared
Yanayin Zafin Jiki	900–3000°C
Daidaiton Zafin Jiki	±1°C
Nisan Matsi	1–700 mbar
Daidaiton Kula da Matsi	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Nau'in Aiki	Zaɓuɓɓukan aminci na ƙasa, da hannu/atomatik
Zaɓaɓɓun Sifofi	Ma'aunin zafin jiki guda biyu, yankuna masu dumama da yawa

Ayyukan XKH:

XKH tana ba da dukkan ayyukan sarrafawa na tanderun SiC PVT, gami da keɓance kayan aiki (ƙirƙirar filin zafi, sarrafa atomatik), haɓaka tsari (sarrafa siffar lu'ulu'u, inganta lahani), horar da fasaha (aiki da kulawa) da tallafin bayan siyarwa (maye gurbin sassan graphite, daidaita filin zafi) don taimakawa abokan ciniki cimma samar da lu'ulu'u mai inganci. Hakanan muna ba da ayyukan haɓaka tsari don ci gaba da inganta yawan lu'ulu'u da ingancin girma, tare da lokacin jagoranci na yau da kullun na watanni 3-6.