SiC substrate Dia200mm 4H-N da HPSI Silicon carbide

4H-N da HPSI nau'in silicon carbide ne mai yawa (SiC), tare da tsarin lattice na lu'ulu'u wanda ya ƙunshi raka'o'i hexagonal waɗanda aka yi da ƙwayoyin carbon guda huɗu da silicon guda huɗu. Wannan tsarin yana ba wa kayan aiki kyakkyawan yanayin motsi na electron da ƙarfin lantarki. Daga cikin dukkan nau'ikan SiC, 4H-N da HPSI ana amfani da su sosai a fannin lantarki saboda daidaiton motsi na electron da rami da kuma ƙarfin watsa zafi mai yawa.

Fitowar ƙananan sifofi masu inci 8 na SiC yana wakiltar babban ci gaba ga masana'antar semiconductor mai amfani da wutar lantarki. Kayan semiconductor na gargajiya waɗanda aka yi da silicon suna fuskantar raguwar aiki mai yawa a ƙarƙashin yanayi mai tsanani kamar yanayin zafi mai yawa da ƙarfin lantarki mai yawa, yayin da ƙananan sifofin SiC na iya kiyaye kyakkyawan aikinsu. Idan aka kwatanta da ƙananan sifofi, ƙananan sifofin SiC masu inci 8 suna ba da babban yanki na sarrafawa guda ɗaya, wanda ke fassara zuwa ingantaccen samarwa da ƙarancin farashi, wanda yake da mahimmanci don haɓaka tsarin kasuwanci na fasahar SiC.

Fasahar girma ga substrates silicon carbide (SiC) mai inci 8 tana buƙatar daidaito da tsarki sosai. Ingancin substrates ɗin kai tsaye yana shafar aikin na'urori masu zuwa, don haka masana'antun dole ne su yi amfani da fasahohin zamani don tabbatar da kamalar kristal da ƙarancin lahani na substrates. Wannan yawanci ya ƙunshi hanyoyin tattara tururi masu rikitarwa (CVD) da dabarun girma da yanke kristal daidai. Ana amfani da substrates 4H-N da HPSI SiC musamman a fannin lantarki mai ƙarfi, kamar a cikin masu canza wutar lantarki mai inganci, masu canza wutar lantarki don motocin lantarki, da tsarin makamashi mai sabuntawa.

Za mu iya samar da substrate mai inci 4H-N 8, nau'ikan wafers daban-daban na substrate. Haka kuma za mu iya shirya keɓancewa bisa ga buƙatunku. Barka da zuwa tambaya!