SiC
-
Inci 12 na SIC substrate silicon carbide prime grade diamita 300mm babba girman 4H-N Ya dace da watsa zafi mai ƙarfi na na'urar
-
Wafer SiC silicon carbide mai inci 8 4H-N nau'in 0.5mm na matakin samarwa na bincike na musamman wanda aka goge shi da kyau
-
Wafer ɗin HPSI SiC dia: kauri inci 3:350um± 25 µm don Lantarki Mai Wutar Lantarki
-
Inci 3 Tsarkakakken Tsaftataccen Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
-
Sabuwar samfurin SiC wafer Dia2inch mai nau'in P-type
-
Wafers na Silicon Carbide SiC mai inci 8 200mm 4H-N nau'in samarwa Kauri 500um
-
Inci 2 na Silicon Carbide Substrate Sic Wafer mai gogewa mai inci 6H-N mai siffar siliki ...
-
Wafer mai inci 12 mai girman inci 4H-SiC don gilashin AR
-
Wafer na HPSI SiC ≥90% Matsayin Canja wurin gani don Gilashin AI/AR
-
Gilashin Ar Mai Tsabtace-tsaftace Mai Rufewa Mai Rufe-rufe (SiC)
-
Wafers na Epitaxial 4H-SiC don MOSFETs masu ƙarfin lantarki mai matuƙar girma (100–500 μm, inci 6)
-
SICOI (Silicon Carbide akan Insulator) Wafers SiC Film ON Silicon