Gilashin Ar Mai Tsabtace-tsaftace Mai Rufewa Mai Rufe-rufe (SiC)

Gilashin Ar Mai Tsabtace-tsaftace Mai Rage-Rage (SiC)

Takaitaccen Bayani:

Abubuwan da aka yi da silicon carbide mai kauri (SiC) masu tsabta kayan aiki ne na musamman da aka yi da silicon carbide, waɗanda ake amfani da su sosai wajen kera na'urorin lantarki masu amfani da wutar lantarki, na'urorin rediyo (RF), da kuma kayan aikin semiconductor masu yawan mita da zafin jiki. Silicon carbide, a matsayin kayan semiconductor mai faɗi, yana ba da kyawawan halaye na lantarki, zafi, da na inji, wanda hakan ya sa ya dace sosai don amfani a cikin yanayin wutar lantarki mai yawan mita, mai yawan mita, da zafin jiki mai yawa.

Aika mana imel

Siffofi

Cikakken Zane

Bayanin Samfurin Wafers na SiC Mai Rufewa

An ƙera Wafers ɗin SiC mai Tsabta Mai Tsabta don na'urorin lantarki masu ƙarfi, abubuwan haɗin RF/microwave, da aikace-aikacen optoelectronic. An ƙera waɗannan wafers ɗin ne daga lu'ulu'u guda ɗaya masu inganci na 4H- ko 6H-SiC, ta amfani da hanyar haɓaka Fisiki na Vapor Transport (PVT), sannan kuma a yi musu gyaran diyya mai zurfi. Sakamakon shine wafer mai waɗannan kyawawan halaye:

Juriya Mai Girma: ≥1×10¹² Ω·cm, yana rage kwararar ruwa a cikin na'urorin canza wutar lantarki mai ƙarfi.
Faɗin Bandgift (~3.2 eV): Yana tabbatar da kyakkyawan aiki a cikin yanayi mai zafi, mai cike da yanayi mai zafi, da kuma mai cike da hasken rana.
Ƙarfin wutar lantarki na musamman: >4.9 W/cm·K, yana samar da ingantaccen watsa zafi a cikin aikace-aikacen da ke da ƙarfin iko mai yawa.
Ƙarfin Inji Mai Kyau: Tare da taurin Mohs na 9.0 (na biyu bayan lu'u-lu'u), ƙarancin faɗaɗa zafi, da kuma ƙarfin kwanciyar hankali na sinadarai.
Fuskar da ke da santsi ta atomatik: Ra < 0.4 nm da kuma yawan lahani < 1/cm², ya dace da ƙirƙirar MOCVD/HVPE epitaxy da micro-nano.

Girman da ake da suGirman da aka saba amfani da shi ya haɗa da 50, 75, 100, 150, da 200 mm (2"–8"), tare da diamita na musamman da ake da shi har zuwa 250 mm.
Nisa Mai Kauri: 200–1,000 μm, tare da juriyar ±5 μm.

Tsarin Kera Wafers na SiC Mai Rufewa

Shiri na SiC Mai Tsabta

Kayan Farawa: Foda SiC mai nauyin 6N, an tsarkake ta ta amfani da ma'aunin zafi da na injinan rage gurɓata abubuwa da yawa, wanda ke tabbatar da ƙarancin gurɓatar ƙarfe (Fe, Cr, Ni < 10 ppb) da ƙarancin haɗakar polycrystalline.

Girman PVT Mai Sauƙi Ɗaya

Muhalli: Kusa da injin (10⁻³–10⁻² Torr).
Zafin jiki: An dumama graphite zuwa ~2,500 °C tare da daidaitaccen yanayin zafi na ΔT ≈ 10–20 °C/cm.
Tsarin Gudun Iskar Gas & Crucible: Masu raba bututun ruwa da ramuka masu ramuka da aka ƙera suna tabbatar da rarraba tururi iri ɗaya da kuma danne nucleation ɗin da ba a so.
Ciyarwa & Juyawa Mai Sauƙi: Cika foda na SiC da juyawar sandar lu'ulu'u lokaci-lokaci yana haifar da ƙarancin katsewar danshi (<3,000 cm⁻²) da kuma daidaiton yanayin 4H/6H.

Ƙaramin Biyan Kuɗi

Hydrogen Anal: Ana gudanar da shi a cikin yanayin H₂ a yanayin zafi tsakanin 600–1,400 °C don kunna tarkuna masu zurfi da kuma daidaita masu ɗaukar kaya na ciki.
Ba a haɗa magunguna da juna ba (Zaɓi ne): Haɗa Al (mai karɓa) da N (mai bayarwa) yayin girma ko bayan girma CVD don samar da ma'aurata masu karɓuwa masu ba da gudummawa, wanda ke haifar da kololuwar juriya.

Yankan Daidaito & Lapping-Standards Multi-Standards

Wayar Lu'u-lu'u: Wafers ɗin da aka yanka zuwa kauri na 200–1,000 μm, tare da ƙarancin lalacewa da juriya na ±5 μm.
Tsarin Latsawa: Abubuwan goge lu'u-lu'u masu kauri zuwa laushi suna cire lalacewar zarto, suna shirya wafer ɗin don gogewa.

Gina Injinan Sinadarai (CMP)

Kafofin Watsa Labarai Masu Kyau: Nano-oxide (SiO₂ ko CeO₂) slurry a cikin ruwan alkaline mai laushi.
Sarrafa Tsarin Aiki: Gogewa mai ƙarancin ƙarfi yana rage ƙazanta, yana cimma ƙazanta na RMS na 0.2–0.4 nm kuma yana kawar da ƙananan ƙazanta.

Tsaftacewa da Marufi na Ƙarshe

Tsaftacewa ta UltrasonicTsarin tsaftacewa mai matakai da yawa (mai narkewar sinadarai na halitta, maganin acid/base, da kuma wankewar ruwa mai narkewa) a cikin muhallin tsaftace ɗaki na Class-100.
Hatimi & Marufi: Busar da wafer ɗin da sinadarin nitrogen, an rufe shi a cikin jakunkunan kariya masu cike da nitrogen kuma an lulluɓe shi a cikin akwatunan waje masu hana girgiza da kuma rage girgiza.

Bayani dalla-dalla game da Wafers ɗin SiC masu rufi da Semi-Insulating

Aikin Samfuri	Darasi na P	Darasi na D
I. Sigogi na Crystal	I. Sigogi na Crystal	I. Sigogi na Crystal
Nau'in Kwalliyar Crystal	4H	4H
Fihirisar Refractive a	>2.6 @589nm	>2.6 @589nm
Matsayin Sha a	≤0.5% @450-650nm	≤1.5% @450-650nm
MP Transmittance a (Ba a rufe shi ba)	≥66.5%	≥66.2%
Haze a	≤0.3%	≤1.5%
Haɗa Polytype a	Ba a yarda ba	Yankin da aka tara ≤20%
Yawan bututun micro a	≤0.5 /cm²	≤2 /cm²
Gudu mai kusurwa huɗu a	Ba a yarda ba	Ba a Samu Ba
Haɗakar Faceted a	Ba a yarda ba	Ba a Samu Ba
Haɗa MP a	Ba a yarda ba	Ba a Samu Ba
II. Sigogi na Inji	II. Sigogi na Inji	II. Sigogi na Inji
diamita	150.0 mm +0.0 mm / -0.2 mm	150.0 mm +0.0 mm / -0.2 mm
Tsarin Fuskar	{0001} ±0.3°	{0001} ±0.3°
Babban Tsawon Lebur	Notch	Notch
Tsawon Lebur na Biyu	Babu gidan sakandare	Babu gidan sakandare
Tsarin Notch	<1-100> ±2°	<1-100> ±2°
Kusurwar Notch	90° +5° / -1°	90° +5° / -1°
Zurfin Fitowa	1 mm daga gefe +0.25 mm / -0.0 mm	1 mm daga gefe +0.25 mm / -0.0 mm
Maganin Fuskar	Fuskar C, Si-fuskar: Man shafawa na Chemo-Mechanical (CMP)	Fuskar C, Si-fuskar: Man shafawa na Chemo-Mechanical (CMP)
Gefen Wafer	Chamfered (An zagaye)	Chamfered (An zagaye)
Taushin saman (AFM) (5μm x 5μm)	Si-face, C-fuska: Ra ≤ 0.2 nm	Si-face, C-fuska: Ra ≤ 0.2 nm
Kauri a (Tropel)	500.0 μm ± 25.0 μm	500.0 μm ± 25.0 μm
LTV (Tropel) (40mm x 40mm) a	≤ 2 μm	≤ 4 μm
Jimlar Bambancin Kauri (TTV) a (Tropel)	≤ 3 μm	≤ 5 μm
Baka (cikakkiyar darajar) a (Tropel)	≤ 5 μm	≤ 15 μm
Warp a (Tropel)	≤ 15 μm	≤ 30 μm
III. Sigogin Fuskar	III. Sigogin Fuskar	III. Sigogin Fuskar
Chip/Filoci	Ba a yarda ba	≤ guda 2, kowanne tsayi da faɗi ≤ 1.0 mm
Kwace a (Si-face, CS8520)	Jimlar tsawon ≤ 1 x Diamita	Jimlar tsawon ≤ 3 x Diamita
Barbashi a (Si-face, CS8520)	≤ guda 500	Ba a Samu Ba
Tsatsa	Ba a yarda ba	Ba a yarda ba
Gurɓatawa a	Ba a yarda ba	Ba a yarda ba

Manyan Amfani da Wafers na SiC Mai Rufewa

Babban Lantarki Mai Ƙarfi: MOSFETs na tushen SiC, Schottky diodes, da kuma na'urorin wutar lantarki na motocin lantarki (EVs) suna amfana daga ƙarancin ƙarfin juriya da ƙarfin wutar lantarki na SiC.
RF & Microwave: Ayyukan SiC masu yawan mita da juriya ga radiation sun dace da amplifiers na tashar tushe ta 5G, na'urorin radar, da kuma sadarwa ta tauraron dan adam.
Optoelectronics: Na'urorin UV-LEDs, diodes masu launin shuɗi, da masu gano hoto suna amfani da sifofin SiC masu santsi na atomic don haɓaka epitaxial iri ɗaya.
Matsanancin Jin Daɗin Muhalli: Kwanciyar SiC a yanayin zafi mai yawa (>600 °C) ya sa ya zama cikakke ga na'urori masu auna firikwensin a cikin mawuyacin yanayi, gami da injinan iskar gas da na'urorin gano makaman nukiliya.
Tashar Jiragen Sama da Tsaro: SiC yana ba da juriya ga na'urorin lantarki masu ƙarfi a cikin tauraron ɗan adam, tsarin makamai masu linzami, da na'urorin lantarki na jirgin sama.
Bincike Mai Ci Gaba: Magani na musamman don ƙirar kwantum, ƙananan na'urori masu auna gani, da sauran aikace-aikacen bincike na musamman.

Tambayoyin da ake yawan yi

Me yasa SiC mai kauri ya wuce SiC mai jurewa?
SiC mai rufewa da rabi yana ba da juriya mai yawa, wanda ke rage kwararar ruwa a cikin na'urori masu ƙarfin lantarki da na'urori masu yawan mita. SiC mai sarrafa wutar lantarki ya fi dacewa da aikace-aikace inda ake buƙatar kwararar wutar lantarki.
Za a iya amfani da waɗannan wafers don ci gaban epitaxial?
Eh, waɗannan wafers ɗin an shirya su sosai kuma an inganta su don MOCVD, HVPE, ko MBE, tare da maganin saman da kuma kula da lahani don tabbatar da ingancin Layer ɗin epitaxial mai kyau.
Ta yaya ake tabbatar da tsaftar wafer?
Tsarin tsaftace ɗaki na Class-100, tsaftacewar ultrasonic matakai da yawa, da kuma marufi mai rufe nitrogen yana tabbatar da cewa wafers ɗin ba su da gurɓatawa, ragowar abubuwa, da ƙananan ƙazanta.
Menene lokacin jagora don umarni?
Samfura yawanci ana jigilar su cikin kwanakin kasuwanci 7-10, yayin da ake isar da odar samarwa cikin makonni 4-6, ya danganta da girman wafer ɗin da fasalulluka na musamman.
Za ku iya samar da siffofi na musamman?
Eh, za mu iya ƙirƙirar abubuwan da aka keɓance na musamman a siffofi daban-daban kamar tagogi masu siffar planar, V-grooves, ruwan tabarau masu siffar ƙwallo, da ƙari.

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.