Kayayyaki
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Inci 12 na SIC substrate silicon carbide prime grade diamita 300mm babba girman 4H-N Ya dace da watsa zafi mai ƙarfi na na'urar
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Dia300x1.0mmt Kauri Sapphire Wafer C-Plane SSP/DSP
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Wafer mai inci 8 mai girman 200mm mai siffar saffir mai kauri mai kauri 1SP 2SP 0.5mm 0.75mm
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Wafer ɗin HPSI SiC dia: kauri inci 3:350um± 25 µm don Lantarki Mai Wutar Lantarki
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Wafer SiC silicon carbide mai inci 8 4H-N nau'in 0.5mm na matakin samarwa na bincike na musamman wanda aka goge shi da kyau
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Wafers ɗin lu'ulu'u guda ɗaya Al2O3 99.999% Dia200mm na saffir 1.0mm kauri 0.75mm
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Wafer ɗin Sapphire mai inci 6 mai girman 156mm 159mm don ɗaukar kaya na C-Plane DSP TTV
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Axis na C/A/M mai inci 4 na sapphire wafers mai lu'ulu'u guda ɗaya Al2O3, SSP DSP mai tauri mai ƙarfi na sapphire substrate
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Inci 3 Tsarkakakken Tsaftataccen Semi-Insulating (HPSI) SiC wafer 350um Dummy grade Prime grade
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Sabuwar samfurin SiC wafer Dia2inch mai nau'in P-type
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Hanyar sarrafa saman sandunan laser na kristal mai ɗauke da titanium-doped sapphire
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Wafers na Silicon Carbide SiC mai inci 8 200mm 4H-N nau'in samarwa Kauri 500um