Mabuɗin Raw Materials don Samar da Semiconductor: Nau'in Abubuwan Wafer

Wafer Substrates azaman Maɓallin Maɓalli a cikin Na'urorin Semiconductor

Wafer substrates sune dillalai na zahiri na na'urorin semiconductor, kuma kayan aikin su kai tsaye suna ƙayyade aikin na'urar, farashi, da filayen aikace-aikace. A ƙasa akwai manyan nau'ikan wafer substrates tare da fa'idodi da rashin amfanin su:

1.Silicon (Si)

• Raba Kasuwa:Lissafi na sama da 95% na kasuwar semiconductor na duniya.

• Amfani:

  • Maras tsada:Abubuwan albarkatun kasa da yawa (silicon dioxide), manyan hanyoyin masana'antu, da kuma tattalin arzikin sikeli mai ƙarfi.

  • Babban dacewa da tsari:Fasahar CMOS ta balaga sosai, tana goyan bayan ci gaba nodes (misali, 3nm).

  • Kyakkyawan ingancin crystal:Za'a iya girma manyan wafers diamita (galibi 12-inch, 18-inch ƙarƙashin haɓakawa) tare da ƙarancin ƙarancin lahani.

  • Bargarin inji Properties:Sauƙi don yanke, gogewa, da rikewa.

• Rashin hasara:

  • Ƙunƙarar bandgap (1.12 eV):Babban yoyo halin yanzu a yanayin zafi mai tsayi, yana iyakance ƙarfin na'urar wuta.

  • Bandgap kai tsaye:Ƙarƙashin ƙaƙƙarfan ƙaƙƙarfan ƙaƙƙarfan ƙayyadaddun ƙayyadaddun haske, wanda bai dace da na'urorin optoelectronic kamar LEDs da lasers ba.

  • Motsi mai iyaka:Ƙarƙashin ƙaƙƙarfan aiki mai girma idan aka kwatanta da na'urorin semiconductor.
    

2.Gallium Arsenide (GaAs)

• Aikace-aikace:Na'urorin RF masu girma (5G/6G), na'urorin optoelectronic (laser, ƙwayoyin rana).

• Amfani:

  • Babban motsi na lantarki (5-6 × na silicon):Ya dace da babban sauri, aikace-aikacen mitoci masu girma kamar sadarwar millimeter-kalaman.

  • Bandgap kai tsaye (1.42 eV):Canjin hoto mai inganci mai inganci, tushen infrared lasers da LEDs.

  • Babban zafin jiki da juriya na radiation:Ya dace da sararin samaniya da yanayi mai tsauri.

• Rashin hasara:

  • Babban farashi:Karancin abu, girman kristal mai wahala (mai yuwuwa ga tarwatsewa), ƙayyadaddun girman wafer (yafi inch 6).

  • Makanikai masu fashewa:Mai yiwuwa ga karaya, yana haifar da ƙarancin sarrafawa.

  • Guba:Arsenic yana buƙatar kulawa mai ƙarfi da sarrafa muhalli.

3. Silicon Carbide (SiC)

• Aikace-aikace:Babban zafin jiki da na'urorin wutar lantarki mai ƙarfi (EV inverters, tashoshi caji), sararin samaniya.

• Amfani:

  • Babban bandeji (3.26 eV):Ƙarfin ɓarna mai ƙarfi (10 × na silicon), juriya mai zafi (zazzabi mai aiki> 200 ° C).

  • High thermal conductivity (≈3× silicon):Kyakkyawan zubar da zafi, yana ba da damar ƙarfin ƙarfin tsarin mafi girma.

  • Asarar ƙarancin sauyawa:Yana haɓaka ƙarfin jujjuya wutar lantarki.

• Rashin hasara:

  • Shirye-shiryen substrate mai ƙalubale:Jinkirin girma crystal (> 1 mako), kula da lahani mai wuya (micropipes, dislocations), tsada mai tsada (5-10 × silicon).

  • Karamin girman wafer:Mafi yawan 4-6 inch; 8-inch har yanzu yana kan ci gaba.

  • Wahalar aiwatarwa:Mai wuyar gaske (Mohs 9.5), yin yankan da gogewa yana ɗaukar lokaci.

4. Gallium Nitride (GAN)

• Aikace-aikace:Na'urorin wutar lantarki masu ƙarfi (caji mai sauri, tashoshin tushe na 5G), LEDs/laser masu shuɗi.

• Amfani:

  • Matsanancin motsi na lantarki + faffadan bandeji (3.4 eV):Haɗa babban mitoci (> 100 GHz) da babban ƙarfin ƙarfin aiki.

  • Ƙananan juriya:Yana rage asarar wutar lantarki.

  • Heteroepitaxy mai jituwa:Wanda aka fi girma akan silicon, sapphire, ko SiC substrates, rage farashi.

• Rashin hasara:

  • Girman girma guda-crystal mai wahala:Heteroepitaxy shine na al'ada, amma rashin daidaituwa na lattice yana gabatar da lahani.

  • Babban farashi:Matsalolin GaN na asali suna da tsada sosai (wafer inch 2 na iya kashe dala dubu da yawa).

  • Kalubalen dogaro:Abubuwan al'amura kamar rugujewar yanzu suna buƙatar haɓakawa.

5. Indium Phosphide (InP)

• Aikace-aikace:Hanyoyin sadarwa masu saurin gani (laser, photodetectors), na'urorin terahertz.

• Amfani:

  • Motsin ultra-high electron:Yana goyan bayan aikin> 100 GHz, wanda ya fi GaAs.

  • Bandgap kai tsaye tare da daidaita tsawon zango:Babban abu don sadarwa na fiber na gani na 1.3-1.55 μm.

• Rashin hasara:

  • Gaggawa da tsada sosai:Farashin Substrate ya wuce siliki 100 × 100, iyakataccen girman wafer (inch 4-6).

6. Sapphire (Al₂O₃)

• Aikace-aikace:Hasken LED (GaN epitaxial substrate), gilashin murfin mabukaci.

• Amfani:

  • Maras tsada:Mai rahusa fiye da SiC/GaN substrates.

  • Kyakkyawan kwanciyar hankali na sinadarai:Mai jure lalata, mai tsananin rufewa.

  • Fassara:Ya dace da sifofin LED na tsaye.

• Rashin hasara:

  • Babban rashin daidaituwa da GaN (> 13%):Yana haifar da babban lahani mai yawa, yana buƙatar yadudduka mai ɗaukar hoto.

  • Rashin ƙarancin zafin jiki (~ 1/20 na silicon):Yana iyakance ayyukan LED masu ƙarfi.

7. Abubuwan yumbura (AlN, BeO, da sauransu)

• Aikace-aikace:Masu ba da zafi don manyan kayayyaki masu ƙarfi.

• Amfani:

  • Insulating + high thermal conductivity (AlN: 170-230 W/m·K):Dace da babban marufi.

• Rashin hasara:

  • Wanda ba guda-crystal:Ba za a iya tallafawa ci gaban na'urar kai tsaye ba, ana amfani da shi azaman marufi kawai.

8. Substrates na Musamman

• SOI (Silicon akan Insulator):

  • Tsarin:Silicon/SiO₂/ Sandwich siliki.

  • Amfani:Yana rage karfin karfin parasitic, mai taurin radiyo, zubar da ruwa (amfani da RF, MEMS).

  • Rashin hasara:30-50% ya fi tsada fiye da silicon.

• Quartz (SiO₂):An yi amfani da shi a cikin hotunan hoto da MEMS; tsayin daka mai zafi amma mai karye sosai.

• Diamond:Mafi girman ma'aunin zafin jiki (> 2000 W/m·K), ƙarƙashin R&D don matsanancin zafi.

Teburin Taƙaitaccen Kwatancen

Mabuɗin Abubuwa don Zaɓin Substrate

• Bukatun aiki:GaAs/InP don babban mita; SiC don babban ƙarfin lantarki, yanayin zafi; GaAs/InP/GaN don optoelectronics.

• Ƙuntataccen farashi:Masu amfani da lantarki sun fi son siliki; filaye masu tsayi na iya tabbatar da ƙimar SiC/GaN.

• Matsalolin haɗin kai:Silicon ya kasance ba a maye gurbinsa don dacewa da CMOS.

• Gudanar da thermal:Aikace-aikace masu ƙarfi sun fi son SiC ko GaN na tushen lu'u-lu'u.

• Balagagge sarkar kaya:Si > Sapphire > GaAs > SiC > GaN > InP.

Trend na gaba

Haɗin kai daban-daban (misali, GaN-on-Si, GaN-on-SiC) zai daidaita aiki da farashi, ci gaban tuƙi a cikin 5G, motocin lantarki, da ƙididdigar ƙididdiga.