Haɗin Hydropholic na HPSI SiCOI guda 4 inci 6

Hoton da aka nuna na HPSI SiCOI wafer mai inci 4 6 mai haɗin Hydropholic

Takaitaccen Bayani:

Ana ƙirƙirar wafers masu ƙarfi na semi-insulating (HPSI) 4H-SiCOI ta amfani da fasahar haɗawa da rage sirara. Ana ƙera wafers ɗin ta hanyar haɗa substrates na silicon carbide na 4H HPSI akan yadudduka masu zafi ta hanyoyi guda biyu: haɗin hydrophilic (kai tsaye) da haɗin da aka kunna a saman. Na ƙarshen yana gabatar da wani Layer mai daidaitawa (kamar amorphous silicon, aluminum oxide, ko titanium oxide) don inganta ingancin haɗin gwiwa da rage kumfa, musamman dacewa da aikace-aikacen gani. Ana samun iko akan kauri na layin silicon carbide ta hanyar SmartCut ko niƙa da tsarin gogewa na CMP da aka gina a cikin ion. SmartCut yana ba da daidaiton kauri mai kyau (50nm–900nm tare da daidaiton ±20nm) amma yana iya haifar da ɗan lalacewar lu'ulu'u saboda dasa ion, yana shafar aikin na'urar gani. Niƙa da gogewa na CMP suna guje wa lalacewar abu kuma an fi so don fina-finai masu kauri (350nm–500µm) da aikace-aikacen quantum ko PIC, kodayake tare da ƙarancin daidaiton kauri (±100nm). Wafers na yau da kullun masu inci 6 suna da layin SiC mai girman 1µm ±0.1µm akan layin SiO2 mai girman 3µm a saman substrates Si 675µm tare da santsi na musamman (Rq < 0.2nm). Waɗannan wafers na HPSI SiCOI suna kula da MEMS, PIC, quantum, da na'urorin gani tare da ingantaccen ingancin abu da sassaucin sarrafawa.

Aika mana imel

Siffofi

Bayanin Kadarorin SiCOI Wafer (Silicon Carbide-on-Insulator)

Wafers ɗin SiCOI wani sabon tsari ne na semiconductor wanda ke haɗa Silicon Carbide (SiC) da wani Layer mai hana ruwa shiga, wanda galibi SiO₂ ko sapphire ne, don inganta aiki a cikin na'urorin lantarki masu amfani da wutar lantarki, RF, da photonics. Ga cikakken bayani game da kaddarorinsu da aka rarraba zuwa manyan sassa:

Kadara	Bayani
Tsarin Kayan Aiki	Layer ɗin Silicon Carbide (SiC) da aka haɗa a kan wani abu mai hana ruwa shiga (yawanci SiO₂ ko saffir)
Tsarin Crystal	Yawanci nau'ikan SiC na 4H ko 6H, wanda aka sani da ingancin lu'ulu'u mai girma da daidaito
Ƙarfin Wutar Lantarki	Filin lantarki mai ƙarfi (~3 MV/cm), faɗin bandgift (~3.26 eV don 4H-SiC), ƙarancin kwararar wutar lantarki
Tsarin kwararar zafi	Babban ƙarfin wutar lantarki (~300 W/m·K), wanda ke ba da damar watsar da zafi mai inganci
Layer na Dielectric	Layer mai rufi (SiO₂ ko sapphire) yana samar da keɓancewa ta lantarki kuma yana rage ƙarfin ƙwayoyin cuta
Kayayyakin Inji	Babban tauri (~ 9 Mohs sikelin), ƙarfin injina mai kyau, da kwanciyar hankali na zafi
Ƙarshen Fuskar	Yawanci yana da santsi sosai tare da ƙarancin lahani, wanda ya dace da ƙera na'urori
Aikace-aikace	Na'urorin lantarki masu ƙarfi, na'urorin MEMS, na'urorin RF, na'urori masu auna firikwensin da ke buƙatar jure zafin jiki mai yawa da ƙarfin lantarki

Wafers na SiCOI (Silicon Carbide-on-Insulator) suna wakiltar wani tsari na semiconductor mai ci gaba, wanda ya ƙunshi siririn silicon carbide (SiC) mai inganci wanda aka haɗa a kan wani Layer mai rufi, yawanci silicon dioxide (SiO₂) ko sapphire. Silicon carbide wani semiconductor ne mai faɗi wanda aka sani da ikonsa na jure wahalhalu masu yawa da yanayin zafi mai yawa, tare da kyakkyawan yanayin zafi da kuma taurin injina, wanda hakan ya sa ya dace da aikace-aikacen lantarki mai ƙarfi, mai yawan mita, da kuma mai yawan zafin jiki.

Tsarin rufewa a cikin wafers ɗin SiCOI yana ba da ingantaccen keɓewa ta lantarki, yana rage ƙarfin ƙwayoyin cuta da kwararar ɗigowa tsakanin na'urori, ta haka yana haɓaka aikin na'urar gabaɗaya da aminci. An goge saman wafer ɗin daidai don samun santsi sosai tare da ƙarancin lahani, yana biyan buƙatun ƙaƙƙarfan buƙatun ƙera na'urori masu ƙananan da nano.

Wannan tsarin kayan ba wai kawai yana inganta halayen lantarki na na'urorin SiC ba, har ma yana ƙara inganta sarrafa zafi da kwanciyar hankali na injiniya. Sakamakon haka, ana amfani da wafers na SiCOI sosai a cikin na'urorin lantarki masu amfani da wutar lantarki, abubuwan da ke cikin mitar rediyo (RF), na'urori masu auna microelectromechanical (MEMS), da na'urorin lantarki masu zafi. Gabaɗaya, wafers na SiCOI suna haɗa kyawawan halayen jiki na silicon carbide tare da fa'idodin keɓewa na lantarki na layin insulator, suna samar da tushe mai kyau ga ƙarni na gaba na na'urorin semiconductor masu aiki mai kyau.

Aikace-aikacen wafer na SiCOI

Na'urorin Lantarki na Wutar Lantarki

Maɓallan wutar lantarki masu ƙarfi da ƙarfi, MOSFETs, da diodes

Amfana daga babban bandgap na SiC, babban ƙarfin lantarki mai lalacewa, da kwanciyar hankali na zafi

Rage asarar wutar lantarki da kuma ingantaccen aiki a tsarin canza wutar lantarki

Abubuwan da ke cikin Mitar Rediyo (RF)

Transistors da amplifiers masu yawan mita

Ƙarancin ƙarfin ƙwayoyin cuta saboda rufin rufi yana ƙara aikin RF

Ya dace da tsarin sadarwa na 5G da radar

Tsarin Microelectromechanical (MEMS)

Na'urori masu auna firikwensin da masu kunna sauti suna aiki a cikin yanayi mai wahala

Ƙarfin injina da rashin ƙarfin sinadarai suna ƙara tsawon rayuwar na'urar

Ya haɗa da na'urori masu auna matsin lamba, na'urori masu auna accelerometers, da na'urorin gyroscopes

Lantarki Mai Zafi Mai Tsayi

Lantarki don aikace-aikacen mota, sararin samaniya, da masana'antu

Yi aiki da aminci a yanayin zafi mai yawa inda silicon ya lalace

Na'urorin Photonic

Haɗawa da abubuwan optoelectronic akan abubuwan rufewa

Yana ba da damar yin amfani da photonics a kan guntu tare da ingantaccen sarrafa zafi

Tambaya da Amsa na SiCOI wafer

Q:Menene wafer SiCOI

A:Wafer ɗin SiCOI yana nufin Silicon Carbide-on-Insulator wafer. Wani nau'in substrate ne na semiconductor inda aka haɗa siririn Layer na silicon carbide (SiC) akan wani Layer mai hana ruwa, yawanci silicon dioxide (SiO₂) ko wani lokacin sapphire. Wannan tsari yayi kama da sanannen wafers ɗin Silicon-on-Insulator (SOI) amma yana amfani da SiC maimakon silicon.