Nau'in Semi 4H SiC mai haɗaka mai inci 6 Kauri 500μm TTV≤5μm MOS

Nau'in Semi 4H SiC mai hade da sinadarai Kauri 500μm TTV≤5μm MOS Hotunan da aka Fito

Takaitaccen Bayani:

Tare da ci gaban sadarwa ta 5G da fasahar radar cikin sauri, substrate mai inci 6 mai rufi da sifili ya zama babban abu don kera na'urori masu yawan mita. Idan aka kwatanta da substrates na GaAs na gargajiya, wannan substrate yana riƙe da juriya mai yawa (>10⁸ Ω·cm) yayin da yake inganta watsa zafi fiye da sau 5, wanda ke magance ƙalubalen watsa zafi a cikin na'urorin da ke da milimita. Ana iya gina amplifiers na wutar lantarki a cikin na'urori na yau da kullun kamar wayoyin komai da ruwanka na 5G da tashoshin sadarwa na tauraron dan adam akan wannan substrate. Ta amfani da fasaharmu ta "maida kuɗin doping Layer buffer", mun rage yawan bututun micropipe zuwa ƙasa da 0.5/cm² kuma mun cimma asarar microwave mai ƙarancin 0.05 dB/mm.

Aika mana imel

Siffofi

Sigogi na fasaha

Abubuwa	Ƙayyadewa	Abubuwa	Ƙayyadewa
diamita	150±0.2 mm	Tsananin gaba (Si-fuska)	Ra≤0.2 nm (5μm×5μm)
Nau'in Polytype	4H	Ƙwaƙwalwar Gefen, Ƙira, Tsagewa (duba gani)	Babu
Juriya	≥1E8 Ω·cm	TTV	≤5 μm
Kauri na canja wurin Layer	≥0.4 μm	Warp	≤35 μm
Babu komai (2mm>D>0.5mm)	≤5 ea/Wafer	Kauri	500±25 μm

Mahimman Sifofi

1. Aiki Mai Kyau Mai Yawan Sauri
Tsarin haɗin SiC mai inci 6 mai rufi yana amfani da ƙirar layin dielectric mai daraja, yana tabbatar da bambancin dielectric na <2% a cikin Ka-band (26.5-40 GHz) da kuma inganta daidaiton lokaci da kashi 40%. Wannan ya ƙara inganci 15% da kuma ƙarancin amfani da wutar lantarki 20% a cikin na'urorin T/R ta amfani da wannan substrate.

2. Gudanar da Zafin Jiki na Ci Gaba
Tsarin haɗin gwiwa na musamman na "gadar zafi" yana ba da damar watsa wutar lantarki ta gefe na 400 W/m·K. A cikin na'urorin PA na tushen tashar 5G na 28 GHz, zafin haɗin yana ƙaruwa da 28°C kawai bayan awanni 24 na ci gaba da aiki - ƙasa da 50°C fiye da mafita na gargajiya.

3. Ingancin Wafer Mafi Kyau
Ta hanyar ingantaccen hanyar sufuri ta jiki (PVT), muna cimma yawan nakasa <500/cm² da kuma bambancin kauri (TTV) <3 μm.
4. Sarrafawa Mai Sauƙin Yin Masana'antu
Tsarin aikin laser ɗinmu wanda aka ƙera musamman don substrate mai inci 6 mai rufi da SiC yana rage yawan yanayin saman da matakai biyu na girma kafin epitaxy.

Babban Aikace-aikace

1. 5G Tushen Tashar Tushe Mai Mahimmanci
A cikin jerin eriya na MIMO masu yawa, na'urorin GaN HEMT akan substrates na SiC masu inci 6 suna samun ƙarfin fitarwa na 200W da inganci fiye da 65%. Gwaje-gwajen filin a 3.5 GHz sun nuna ƙaruwar 30% a cikin radius na ɗaukar hoto.

2. Tsarin Sadarwar Tauraron Dan Adam
Na'urorin watsawa na tauraron dan adam masu ƙarancin sararin samaniya (LEO) waɗanda ke amfani da wannan substrate suna nuna EIRP mai girma 8 dB a cikin Q-band (40 GHz) yayin da suke rage nauyi da 40%. Tashoshin SpaceX Starlink sun yi amfani da shi don samar da taro.

3. Tsarin Radar na Soja
Modules na radar T/R masu tsari-tsari akan wannan substrate suna samun bandwidth na 6-18 GHz da ƙimar hayaniyar ƙasa da 1.2 dB, suna faɗaɗa kewayon ganowa da kilomita 50 a cikin tsarin radar na gargaɗin farko.

4. Radar Motoci Mai Tsawon Millimeter-Wave
Kwamfutocin radar na mota na 79 GHz waɗanda ke amfani da wannan substrate suna inganta ƙudurin kusurwa zuwa 0.5°, suna biyan buƙatun tuƙi na L4 mai cin gashin kansa.

Muna bayar da cikakkiyar mafita ta musamman don abubuwan haɗin SiC na inci 6 masu kauri. Dangane da keɓance sigogin kayan aiki, muna tallafawa daidaitaccen tsarin juriya a cikin kewayon 10⁶-10¹⁰ Ω·cm. Musamman don aikace-aikacen soja, za mu iya bayar da zaɓi mai ƙarfi na juriya >10⁹ Ω·cm. Yana ba da ƙayyadaddun kauri guda uku na 200μm, 350μm da 500μm a lokaci guda, tare da cikakken sarrafa haƙuri a cikin ±10μm, yana biyan buƙatu daban-daban daga na'urori masu yawan mita zuwa aikace-aikacen masu ƙarfi.

Dangane da hanyoyin gyaran saman, muna bayar da mafita guda biyu na ƙwararru: Man shafawa na Chemical Mechanical (CMP) na iya cimma daidaiton saman matakin atomic tare da Ra<0.15nm, wanda ke biyan buƙatun girma na epitaxial mafi buƙata; Fasahar maganin saman epitaxial da aka shirya don buƙatun samarwa cikin sauri na iya samar da saman mai santsi sosai tare da Sq<0.3nm da kauri na oxide na ragowar <1nm, wanda ke sauƙaƙa tsarin kafin a fara magani a ƙarshen abokin ciniki.

XKH tana ba da cikakkun hanyoyin magance matsalolin da aka keɓance don ƙananan abubuwan haɗin SiC masu inci 6.

1. Keɓance Sigar Kayan Aiki
Muna bayar da daidaitaccen daidaita juriya a cikin kewayon 10⁶-10¹⁰ Ω·cm, tare da zaɓuɓɓukan juriya na musamman masu matuƙar ƙarfi >10⁹ Ω·cm da ake samu don aikace-aikacen soja/aerospace.

2. Bayanin Kauri
Zaɓuɓɓukan kauri guda uku masu daidaito:

· 200μm (an inganta shi don na'urori masu yawan mita)

· 350μm (ƙayyadadden bayani)

· 500μm (an tsara shi don aikace-aikacen wutar lantarki mai ƙarfi)
· Duk nau'ikan suna da juriya mai ƙarfi na ±10μm.

3. Fasahar Gyaran Fuska

Goge Injin Sinadarai (CMP): Yana cimma daidaiton matakin atomic tare da Ra <0.15nm, yana biyan buƙatun girma na epitaxial don na'urorin RF da wutar lantarki.

4. Tsarin Tsarin Sufuri na Epi-Ready

· Yana isar da saman da ba su da santsi sosai tare da kauri na Sq <0.3nm

· Yana sarrafa kauri na iskar oxygen zuwa <1nm

· Yana kawar da har zuwa matakai 3 kafin a sarrafa su a wuraren abokan ciniki