Injin 4 inch 6 inch 8 SiC Crystal Growth Fired don Tsarin CVD

Takaitaccen Bayani:

Tsarin Tsarin Girki na Girki na SiC Crystal Growth na XKH CVD yana amfani da fasahar adana tururin sinadarai mafi girma a duniya, wanda aka tsara musamman don haɓakar lu'ulu'u guda ɗaya na SiC mai inganci. Ta hanyar sarrafa ma'aunin tsari, gami da kwararar iskar gas, zafin jiki da matsin lamba, yana ba da damar haɓaka lu'ulu'u na SiC akan abubuwan da aka yi amfani da su na inci 4-8. Wannan tsarin CVD na iya samar da nau'ikan lu'ulu'u na SiC daban-daban, gami da nau'in 4H/6H-N da nau'in rufewa na 4H/6H-SEMI, yana ba da cikakkun mafita daga kayan aiki zuwa hanyoyin aiki. Tsarin yana tallafawa buƙatun girma don wafers na inci 2-12, wanda hakan ya sa ya dace musamman don samar da kayan lantarki masu ƙarfi da na'urorin RF.

Aika mana imel

Siffofi

Ka'idar Aiki

Babban ƙa'idar tsarin CVD ɗinmu ta ƙunshi rugujewar zafi na iskar gas mai ɗauke da silicon (misali, SiH4) da iskar gas mai ɗauke da carbon (misali, C3H8) a yanayin zafi mai yawa (yawanci 1500-2000°C), suna ajiye lu'ulu'u guda ɗaya na SiC a kan abubuwan da aka yi amfani da su ta hanyar halayen sinadarai na lokaci-lokaci na iskar gas. Wannan fasaha ta dace musamman don samar da tsabta mai yawa (>99.9995%) lu'ulu'u guda ɗaya na 4H/6H-SiC tare da ƙarancin lahani (<1000/cm²), biyan buƙatun kayan aiki masu tsauri don na'urorin lantarki masu amfani da wutar lantarki da na'urorin RF. Ta hanyar sarrafa daidaiton tsarin iskar gas, saurin kwarara da yanayin zafi, tsarin yana ba da damar daidaita daidaiton nau'in wutar lantarki mai aiki da lu'ulu'u (nau'in N/P) da juriya.

Nau'in Tsarin da Sigogi na Fasaha

Nau'in Tsarin	Yanayin Zafin Jiki	Mahimman Sifofi	Aikace-aikace
CVD mai zafi sosai	1500-2300°C	Dumamawar induction ta graphite, ±5°C daidaiton zafin jiki	Girman lu'ulu'u na SiC mai yawa
CVD Mai Zafi	800-1400°C	Dumama filament na Tungsten, ƙimar ajiya na 10-50μm/h	Epitaxy mai kauri na SiC
CVD na VPE	1200-1800°C	Kula da zafin jiki na yankuna da yawa, > 80% amfani da iskar gas	Samar da babban epi-wafer
PECVD	400-800°C	An inganta plasma, ƙimar ajiya 1-10μm/h	Fina-finan SiC masu ƙarancin zafi

Muhimman Halayen Fasaha

1. Tsarin Kula da Zafin Jiki Mai Cike da Sauƙi
Tanderu tana da tsarin dumama mai jure zafi mai sassa daban-daban wanda zai iya kiyaye yanayin zafi har zuwa 2300°C tare da daidaiton ±1°C a duk faɗin ɗakin girma. Ana samun wannan daidaitaccen tsarin sarrafa zafi ta hanyar:
Yankunan dumama guda 12 masu sarrafawa daban-daban.
Kulawa mai yawan amfani da thermocouple (Nau'in C W-Re).
Algorithms na daidaitawar yanayin zafi na ainihin lokaci.
Bangon ɗakin da aka sanyaya da ruwa don sarrafa yanayin zafi.

2. Fasahar Isar da Iskar Gas da Haɗawa
Tsarin rarraba iskar gas ɗinmu na musamman yana tabbatar da ingantaccen haɗakar abubuwan da suka dace da kuma isar da su iri ɗaya:
Masu sarrafa kwararar taro tare da daidaiton ±0.05sccm.
Manhajar allurar iskar gas mai maki da yawa.
Kula da abubuwan da ke cikin iskar gas (FTIR spectroscopy).
Daidaita kwararar ruwa ta atomatik yayin zagayowar girma.

3. Inganta Ingancin Crystal
Tsarin ya haɗa da sabbin abubuwa da yawa don inganta ingancin lu'ulu'u:
Mai riƙe da substrate mai juyawa (wanda za'a iya tsara shi 0-100rpm).
Fasaha mai zurfi ta sarrafa layin iyaka.
Tsarin sa ido kan lahani a cikin wurin (watsa laser na UV).
Mayar da hankali ta atomatik yayin girma.

4. Tsarin Aiki da Kai da Sarrafawa
Cikakken aiwatar da girke-girke ta atomatik.
Inganta sigogin girma na ainihin lokaci AI.
Kulawa daga nesa da kuma gano cutar.
Rijistar bayanai sama da 1000 (an adana shi tsawon shekaru 5).

5. Siffofin Tsaro da Aminci
Kariyar zafi mai yawa sau uku.
Tsarin tsaftace gaggawa ta atomatik.
Tsarin gine-gine mai ƙimar girgizar ƙasa.
Garanti na 98.5% na lokacin aiki.

6. Tsarin Gine-gine Mai Girma
Tsarin zamani yana ba da damar haɓaka iya aiki.
Dace da girman wafer 100mm zuwa 200mm.
Yana goyan bayan saitunan tsaye da kwance.
Sauya kayan aiki cikin sauri don kulawa.

7. Ingantaccen Makamashi
Amfani da wutar lantarki ya ragu da kashi 30% fiye da tsarin da aka kwatanta.
Tsarin dawo da zafi yana kama kashi 60% na zafin sharar gida.
Ingantaccen algorithms na amfani da iskar gas.
Bukatun kayan aiki masu bin ka'idojin LEED.

8. Sauƙin Amfani da Kayan Aiki
Yana haɓaka dukkan manyan nau'ikan SiC (4H, 6H, 3C).
Yana tallafawa bambance-bambancen sarrafawa da kuma semi-insulating.
Yana ɗaukar nau'ikan doping daban-daban (nau'in N-type, nau'in P-type).
Dace da madadin abubuwan da suka riga suka fara aiki (misali, TMS, TES).

9. Aikin Tsarin Injin Tsafta
Matsi na tushe: <1×10⁻⁶ Torr
Yawan zubewa: <1×10⁻⁹ Torr·L/sec
Gudun famfo: 5000L/s (don SiH₄)

Sarrafa matsin lamba ta atomatik yayin zagayowar girma
Wannan cikakken bayani na fasaha yana nuna ikon tsarinmu na samar da lu'ulu'u na SiC masu inganci da inganci na bincike tare da daidaito da yawan amfanin ƙasa a masana'antu. Haɗin sarrafa daidaito, sa ido na gaba, da injiniya mai ƙarfi ya sa wannan tsarin CVD ya zama zaɓi mafi kyau ga duka aikace-aikacen R&D da ƙera girma a cikin na'urorin lantarki masu amfani da wutar lantarki, na'urorin RF, da sauran aikace-aikacen semiconductor masu ci gaba.

Muhimman Fa'idodi

1. Girman Crystal Mai Inganci
• Yawan lahani kamar <1000/cm² (4H-SiC)
• Daidaiton shan ƙwayoyi <5% (wafers mai inci 6)
• Tsarkakakken lu'ulu'u >99.9995%

2. Ƙarfin Samarwa Mai Girma
• Yana tallafawa girman wafer har zuwa inci 8
• Daidaito tsakanin diamita >99%
• Bambancin kauri <±2%

3. Daidaitaccen Tsarin Sarrafawa
• Daidaiton sarrafa zafin jiki ±1°C
• Daidaiton sarrafa kwararar iskar gas ±0.1sccm
• Daidaiton sarrafa matsi ±0.1Torr

4. Ingantaccen Makamashi
• Inganta makamashi ta hanyar amfani da hanyoyin gargajiya ta hanyar amfani da kashi 30%
• Yawan girma har zuwa 50-200μm/h
• Lokacin aiki na kayan aiki >95%

Manhajoji Masu Mahimmanci

1. Na'urorin Lantarki Masu Ƙarfi
Substrates masu inci 6 masu girman 4H-SiC don 1200V+ MOSFETs/diodes, suna rage asarar sauyawa da kashi 50%.

2. Sadarwa ta 5G
Ƙananan SiC substrates (resistivity >10⁸Ω·cm) don tashar tushe PAs, tare da asarar shigarwa <0.3dB a >10GHz.

3. Sabbin Motocin Makamashi
Modules na wutar lantarki na SiC na mota suna faɗaɗa kewayon EV da kashi 5-8% kuma suna rage lokacin caji da kashi 30%.

4. Masu canza PV
Ƙananan lahani suna haɓaka ingancin juyawa fiye da kashi 99% yayin da suke rage girman tsarin da kashi 40%.

Ayyukan XKH

1. Ayyukan Keɓancewa
Tsarin CVD mai inci 4-8 da aka kera.
Yana tallafawa ci gaban nau'in 4H/6H-N, nau'in rufewa na 4H/6H-SEMI, da sauransu.

2. Tallafin Fasaha
Cikakken horo kan aiki da inganta tsarin aiki.
Amsar fasaha ta 24/7.

3. Maganin Turnkey
Ayyukan ƙarshe daga shigarwa zuwa tabbatar da tsari.

4. Samar da Kayan Aiki
Akwai nau'ikan SiC substrates/epi-wafers masu inci 2-12.
Yana goyan bayan nau'ikan polytypes na 4H/6H/3C.

Manyan bambance-bambancen sun haɗa da:
Har zuwa ƙarfin girma na lu'ulu'u mai inci 8.
Kashi 20% cikin sauri fiye da matsakaicin masana'antu.
98% amincin tsarin.
Cikakken tsarin kula da hankali.