Wafers na Epitaxial 4H-SiC don MOSFETs masu ƙarfin lantarki mai matuƙar girma (100–500 μm, inci 6)

Wafers na Epitaxial 4H-SiC don MOSFETs masu ƙarfin lantarki mai yawa (100–500 μm, inci 6) Hoton da aka Fito

Takaitaccen Bayani:

Saurin karuwar motocin lantarki, hanyoyin sadarwa masu wayo, tsarin makamashi mai sabuntawa, da kayan aikin masana'antu masu ƙarfi ya haifar da buƙatar gaggawa ga na'urorin semiconductor waɗanda ke iya sarrafa ƙarfin lantarki mafi girma, yawan ƙarfin lantarki mafi girma, da kuma ingantaccen aiki. Daga cikin manyan na'urorin semiconductor,silicon carbide (SiC)Ya shahara saboda faɗin bandgift ɗinsa, babban ƙarfin thermal conductivity, da kuma ƙarfin filin lantarki mai mahimmanci.

Aika mana imel

Siffofi

Cikakken Zane

Bayanin Samfuri

NamuWafers na epitaxial 4H-SiCan ƙera su musamman donAikace-aikacen MOSFET mai ƙarfin lantarki mai matuƙar girmaTare da yadudduka na epitaxial waɗanda suka fara daga100 μm zuwa 500 μm on Ƙananan abubuwa masu inci 6 (150 mm)Waɗannan wafers ɗin suna isar da yankunan da ake buƙata don na'urorin aji na kV yayin da suke kiyaye ingancin lu'ulu'u da kuma iya daidaitawa. Kauri na yau da kullun ya haɗa da 100 μm, 200 μm, da 300 μm, tare da gyare-gyare da ake samu.

Kauri na Layer na Epitaxial

Layer na epitaxial yana taka muhimmiyar rawa wajen tantance aikin MOSFET, musamman daidaito tsakaninƙarfin lantarki na rushewakumajuriya.

100–200 μm: An inganta shi don matsakaicin ƙarfin lantarki zuwa babban MOSFETs, yana ba da daidaito mai kyau na ingancin watsawa da ƙarfin toshewa.
200–500 μm: Ya dace da na'urorin ƙarfin lantarki mai matuƙar ƙarfi (10 kV+), wanda ke ba da damar yankuna masu tsayi don samun ƙarfin lalacewa.

A duk faɗin yankin,Daidaiton kauri yana cikin ±2%, tabbatar da daidaito daga wafer zuwa wafer da kuma batch zuwa batch. Wannan sassauci yana bawa masu zane damar daidaita aikin na'ura don azuzuwan ƙarfin lantarki da aka nufa yayin da suke kiyaye sake samarwa a cikin yawan samarwa.

Tsarin Masana'antu

Ana ƙera wafer ɗinmu ta amfani daCVD na zamani (Sinadarin Tururi Mai Tsami) epitaxy, wanda ke ba da damar sarrafa kauri, shan ƙwayoyi, da ingancin lu'ulu'u daidai, koda ga yadudduka masu kauri sosai.

CVD Epitaxy- Iskar gas mai tsafta da yanayin da aka inganta suna tabbatar da santsi da kuma ƙarancin lahani.
Girman Layer Mai Kauri– Girke-girke na tsari na musamman suna ba da damar kauri na epitaxial har zuwa500 μmtare da kyakkyawan daidaito.
Kula da Shan Magungunan Doping- Daidaita maida hankali tsakanin1×10¹⁴ – 1×10¹⁶ cm⁻³, tare da daidaito mafi kyau fiye da ±5%.
Shiri na Fuskar- Wafers suna yin aikigogewar CMPda kuma duba sosai, don tabbatar da dacewa da ci gaba da tsare-tsare kamar oxidation na ƙofar, photolithography, da metallisation.

Muhimman Fa'idodi

Ƙarfin Ƙarfin Wutar Lantarki Mai Tsanani- Yanka-yanka masu kauri (100-500 μm) suna tallafawa ƙirar MOSFET na aji na kV.
Ingancin Crystal na Musamman- Ƙananan nakasawa da kuma yawan lahani na babban jirgin sama suna tabbatar da aminci da kuma rage yawan zubewa.
Manyan Ƙananan Ƙasa Masu Inci 6- Tallafi don samar da kayayyaki masu yawa, rage farashi ga kowace na'ura, da kuma dacewa mai kyau.
Manyan Halayen Zafin Jiki- Babban ƙarfin zafi da kuma faɗin bandgita yana ba da damar aiki mai inganci a babban iko da zafin jiki.
Sigogi na Musamman- Za a iya daidaita kauri, doping, yanayin daidaitawa, da kuma kammala saman bisa ga takamaiman buƙatu.

Bayanan Musamman

Sigogi	Ƙayyadewa
Nau'in watsa wutar lantarki	Nau'in N (wanda aka yi amfani da sinadarin Nitrogen)
Juriya	Duk wani
Kusurwar da ba ta kai ga axis ba	4° ± 0.5° (zuwa [11-20])
Tsarin Crystal	(0001) Si-fuskar
Kauri	200–300 μm (wanda za a iya keɓance shi 100–500 μm)
Ƙarshen Fuskar	Gaba: An goge CMP (an shirya shi sosai) Baya: an goge shi ko an goge shi
TTV	≤ 10 μm
Baka/Ƙarfe	≤ 20 μm

Yankunan Aikace-aikace

Wafers ɗin epitaxial na 4H-SiC sun fi dacewa daMOSFETs a cikin tsarin ƙarfin lantarki mai matuƙar girma, ciki har da:

Injinan jan hankalin ababen hawa na lantarki & na'urorin caji masu ƙarfin lantarki mai ƙarfi
Kayan aikin watsawa da rarrabawa na grid mai wayo
Masu canza makamashi (rana, iska, ajiya)
Kayayyakin masana'antu masu ƙarfi da tsarin sauyawa

Tambayoyin da ake yawan yi akai-akai

T1: Menene nau'in conductivity?
A1: Nau'in N, wanda aka haɗa da nitrogen - ma'aunin masana'antu na MOSFETs da sauran na'urorin wutar lantarki.

T2: Waɗanne kauri ne ake samu daga epitaxial?
A2: 100–500 μm, tare da zaɓuɓɓuka na yau da kullun a 100 μm, 200 μm, da 300 μm. Akwai kauri na musamman idan an buƙata.

Q3: Menene yanayin wafer da kusurwar da ba ta kai tsaye ba?
A3: (0001) Fuskar Si-fuska, tare da 4° ± 0.5° a gefen-axis zuwa ga alkiblar [11-20].

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.