4 inch SiC Wafers 6H Semi-Insulating SiC Substrates firamare, bincike, da juzu'i.
Ƙayyadaddun samfur
| Daraja | Zero MPD Production Grade (Z Grade) | Daidaitaccen Matsayin Ƙirƙira (P Grade) | Dummy Grade (D Grade) | ||||||||
| Diamita | 99.5mm ~ 100.0 mm | ||||||||||
| 4H-SI | 500 μm± 20 μm | 500 μm± 25 μm | |||||||||
| Wafer Orientation |
Kashe axis: 4.0° zuwa <1120> ± 0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI | ||||||||||
| 4H-SI | ≤1cm-2 | ≤5 cm-2 | ≤15 cm-2 | ||||||||
| 4H-SI | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |||||||||
| Hanyar Farko ta Flat | {10-10} ± 5.0° | ||||||||||
| Tsawon Lantarki na Farko | 32.5 mm ± 2.0 mm | ||||||||||
| Tsawon Lantarki na Sakandare | 18.0 mm ± 2.0 mm | ||||||||||
| Gabatarwar Flat na Sakandare | Fuskar Silicon: 90° CW. daga Prime flat ± 5.0° | ||||||||||
| Ƙarƙashin Ƙarfi | 3 mm ku | ||||||||||
| LTV/TTV/Baka/Warp | ≤3 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||||||||
| Tashin hankali | C fuska | Yaren mutanen Poland | Ra ≤1 nm | ||||||||
| Sa face | CMP | ≤0.2 nm | ≤0.5 nm | ||||||||
| Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara | Babu | Tsayin tarawa ≤ 10 mm, guda tsayi ≤2 mm | |||||||||
| Hex Plates Ta Babban Haske mai ƙarfi | Tarin yanki ≤0.05% | Tarin yanki ≤0.1% | |||||||||
| Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi | Babu | Tarin yanki≤3% | |||||||||
| Haɗin Carbon Na gani | Tarin yanki ≤0.05% | Tarin yanki ≤3% | |||||||||
| Silicon Surface Scratches By High Intensity Light | Babu | Tsayin tarawa≤1*wafer diamita | |||||||||
| Edge Chips High By Intensity Light | Babu wanda aka halatta ≥0.2 mm faɗi da zurfin | 5 izini, ≤1 mm kowanne | |||||||||
| Gurɓatar Silicon Surface Ta Babban Ƙarfi | Babu | ||||||||||
| Marufi | Cassette mai yawa-wafer ko kwantena wafer guda ɗaya | ||||||||||
Cikakken zane
Samfura masu dangantaka
Ku rubuta sakonku anan ku aiko mana






