Wafer ɗin SiC mai inci 3 mai girman inci 76.2mm mai siffar 4H-Semi SiC mai siffar ƙwallo ...

Wafer ɗin SiC mai inci 3 mai girman inci 76.2mm 4H-Semi SiC mai siffar siffa ta Silicon Carbide mai siffar siffa ta siffa ta siffa ta siffa ta siffa ta siffa ta siffa

Takaitaccen Bayani:

Wafer SiC mai inganci mai kyau ga masana'antar lantarki da optoelectronic. Wafer SiC mai inci 3 wani abu ne na semiconductor na zamani, wanda aka yi da semi-insulating silicon-carbide mai diamita inci 3. An yi shi ne don ƙera na'urorin lantarki, RF da optoelectronic.

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Bayanin Samfuri

Wafers ɗin substrate mai inci 3 mai inci 4H SiC (silicon carbide) wani abu ne da ake amfani da shi a semiconductor. 4H yana nuna tsarin lu'ulu'u na tetrahexahedral. Semi-rufi yana nufin cewa substrate ɗin yana da halaye masu ƙarfi na juriya kuma ana iya ware shi daga kwararar wutar lantarki.

Irin waɗannan wafers ɗin substrate suna da halaye masu zuwa: yawan zafin jiki mai yawa, ƙarancin asarar watsawa, juriya mai kyau ga zafin jiki, da kuma kyakkyawan kwanciyar hankali na injiniya da sinadarai. Saboda silicon carbide yana da faffadan gibin makamashi kuma yana iya jure yanayin zafi mai yawa da yanayin filin lantarki mai yawa, ana amfani da wafers ɗin semi-insulated 4H-SiC sosai a cikin na'urorin lantarki masu amfani da wutar lantarki da mitar rediyo (RF).

Babban amfani da wafers masu rufi na 4H-SiC sun haɗa da:

1--Ikon lantarki mai ƙarfi: Ana iya amfani da wafers na 4H-SiC don ƙera na'urorin canza wutar lantarki kamar MOSFETs (Tsarin Tasirin Filayen Metal Oxide Semiconductor), IGBTs (Tsarin Gate Bipolar Transistors) da Schottky diodes. Waɗannan na'urori suna da ƙarancin asarar watsawa da sauyawa a cikin yanayin zafi mai yawa da wutar lantarki mai yawa kuma suna ba da inganci da aminci mafi girma.

2--Na'urorin Mitar Rediyo (RF): Ana iya amfani da wafers mai rufi na 4H-SiC don ƙera amplifiers na wutar lantarki mai ƙarfi, masu ƙarfin RF mai ƙarfi, masu juriya ga guntu, matattara, da sauran na'urori. Silicon carbide yana da ingantaccen aiki mai ƙarfi da kwanciyar hankali na zafi saboda yawan kwararar electron da yake yi da kuma yawan watsawar zafi.

3--Na'urorin Optoelectronic: Ana iya amfani da wafers masu kauri 4H-SiC don ƙera diodes masu ƙarfi na laser, na'urorin gano hasken UV da kuma da'irori masu haɗaka na optoelectronic.

Dangane da alkiblar kasuwa, buƙatar wafers masu kauri 4H-SiC yana ƙaruwa yayin da ake samun karuwar fannoni na lantarki, RF da optoelectronics. Wannan ya faru ne saboda gaskiyar cewa silicon carbide yana da nau'ikan aikace-aikace iri-iri, ciki har da ingantaccen makamashi, motocin lantarki, makamashi mai sabuntawa da sadarwa. A nan gaba, kasuwar wafers masu kauri 4H-SiC har yanzu tana da kyakkyawan fata kuma ana sa ran za ta maye gurbin kayan silicon na gargajiya a aikace-aikace daban-daban.