Inci 12 na SIC substrate silicon carbide prime grade diamita 300mm babba girman 4H-N Ya dace da watsa zafi mai ƙarfi na na'urar

Silinda mai inci 12 mai siffar silinda carbide mai girman inci 300mm babba 4H-N Ya dace da watsa zafi mai ƙarfi na na'urar lantarki. Hoton da aka nuna

Takaitaccen Bayani:

Substrate mai inci 12 na silicon carbide (SiC substrate) babban abu ne mai girman gaske, mai aiki sosai wanda aka yi daga lu'ulu'u ɗaya na silicon carbide. Silicon carbide (SiC) wani abu ne mai faɗi da ke da kyawawan halaye na lantarki, zafi da na inji, wanda ake amfani da shi sosai wajen ƙera na'urorin lantarki a cikin yanayi mai ƙarfi, mai yawan mita da zafi. Substrate mai inci 12 (300mm) shine ƙayyadaddun bayanai na yanzu na fasahar silicon carbide, wanda zai iya inganta ingantaccen samarwa da rage farashi.

Aika mana imel

Siffofi

Sifofin Samfura

1. Babban ƙarfin lantarki na zafi: ƙarfin lantarki na silicon carbide ya fi sau 3 fiye da na silicon, wanda ya dace da watsa zafi mai ƙarfi na na'urar.

2. Ƙarfin filin fashewa mai ƙarfi: Ƙarfin filin fashewa ya ninka na silicon sau 10, wanda ya dace da aikace-aikacen matsin lamba mai ƙarfi.

3. Faɗin faɗin bandgip: Bandgip ɗin shine 3.26eV (4H-SiC), ya dace da amfani da zafi mai yawa da mita mai yawa.

4. Babban tauri: Taurin Mohs shine 9.2, na biyu bayan lu'u-lu'u, kyakkyawan juriya ga lalacewa da ƙarfin injiniya.

5. Daidaiton sinadarai: juriya mai ƙarfi ga tsatsa, aiki mai ƙarfi a cikin yanayin zafi mai yawa da yanayi mai tsauri.

6. Girman da ya fi girma: Inci 12 (300mm) mai siffar ƙasa, yana inganta yadda ake samar da shi, yana rage farashin na'urar.

7. Ƙarancin lahani: fasahar girma ta lu'ulu'u mai inganci guda ɗaya don tabbatar da ƙarancin lahani da daidaito mai yawa.

Babban hanyar amfani da samfurin

1. Na'urorin lantarki masu amfani da wutar lantarki:

Mosfets: Ana amfani da shi a cikin motocin lantarki, injinan masana'antu da masu canza wutar lantarki.

Diodes: kamar Schottky diodes (SBD), ana amfani da su don gyarawa da sauya wutar lantarki yadda ya kamata.

2. Na'urorin Rf:

Amplifier na wutar lantarki na Rf: ana amfani da shi a tashoshin sadarwa na 5G da kuma sadarwar tauraron dan adam.

Na'urorin Microwave: Ya dace da tsarin sadarwa na radar da mara waya.

3. Sabbin motocin makamashi:

Tsarin tuƙi na lantarki: masu sarrafa motoci da inverters don motocin lantarki.

Tarin caji: Tsarin wutar lantarki don kayan aiki masu sauri.

4. Aikace-aikacen masana'antu:

Babban ƙarfin lantarki mai jurewa: don sarrafa injin masana'antu da sarrafa makamashi.

Grid mai wayo: Don na'urorin canza wutar lantarki da na'urorin lantarki na HVDC.

5. Tashar Jiragen Sama:

Kayan lantarki masu zafi sosai: ya dace da yanayin zafi mai yawa na kayan aikin sararin samaniya.

6. Fannin bincike:

Binciken semiconductor mai faɗi: don haɓaka sabbin kayan semiconductor da na'urori.

Substrate ɗin silicon carbide mai inci 12 wani nau'in kayan semiconductor ne mai aiki sosai tare da kyawawan halaye kamar ƙarfin zafi mai yawa, ƙarfin filin fashewa mai yawa da kuma tazara mai faɗi. Ana amfani da shi sosai a cikin na'urorin lantarki masu amfani da wutar lantarki, na'urorin mitar rediyo, sabbin motocin makamashi, sarrafa masana'antu da sararin samaniya, kuma muhimmin abu ne don haɓaka ci gaban ƙarni na gaba na na'urorin lantarki masu inganci da ƙarfi.

Duk da cewa a halin yanzu akwai ƙarancin amfani da kayan lantarki na silicon carbide a cikin na'urorin lantarki na masu amfani kamar gilashin AR, ƙarfinsu a cikin ingantaccen sarrafa wutar lantarki da ƙananan na'urorin lantarki na iya tallafawa mafita masu sauƙi, masu inganci don na'urorin AR/VR na gaba. A halin yanzu, babban ci gaban kayan silicon carbide yana mai da hankali ne a fannoni na masana'antu kamar sabbin motocin makamashi, kayayyakin more rayuwa na sadarwa da sarrafa kansu na masana'antu, kuma yana haɓaka masana'antar semiconductor don haɓaka ta hanyar ingantacciyar hanya da aminci.

XKH ta kuduri aniyar samar da ingantattun kayan aikin SIC guda 12 tare da cikakken tallafin fasaha da ayyuka, gami da:

1. Musamman samarwa: Bisa ga abokin ciniki yana buƙatar samar da juriya daban-daban, yanayin lu'ulu'u da kuma substrate na maganin surface.

2. Inganta tsari: Ba wa abokan ciniki tallafin fasaha na ci gaban epitaxial, ƙera na'urori da sauran hanyoyin inganta aikin samfura.

3. Gwaji da takaddun shaida: Samar da cikakken gano lahani da kuma takardar shaidar inganci don tabbatar da cewa substrate ya cika ƙa'idodin masana'antu.

4. Haɗin gwiwar R&D: Haɗa kai wajen haɓaka sabbin na'urorin silicon carbide tare da abokan ciniki don haɓaka sabbin fasahohi.

Jadawalin bayanai

Bayanin Silinda Carbide (SiC) mai inci 1 2
Matsayi		Samar da ZeroMPD Maki (Maki Z)	Tsarin Samarwa na Daidaitacce Maki (Maki na P)		Daraja ta Karya (Mataki na D)
diamita		30 0 mm ~ 305mm
Kauri	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Tsarin Wafer		A gefen axis: 4.0° zuwa <1120 >±0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI
Yawan bututun micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Juriya	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Babban Tsarin Faɗi		{10-10} ±5.0°
Babban Tsawon Lebur	4H-N	Ba a Samu Ba
	4H-SI	Notch
Keɓewa a Gefen		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Taurin kai		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Fashewar Gefen Ta Hanyar Haske Mai Tsanani Faranti na Hex ta Haske Mai Tsanani Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi Abubuwan da ke tattare da Carbon na gani Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani		Babu Yankin da aka tara ≤0.05% Babu Yankin da aka tara ≤0.05% Babu			Tsawon jimilla ≤ 20 mm, tsawonsa ɗaya ≤ 2 mm Yankin da aka tara ≤0.1% Yankin da aka tara≤3% Yankin da aka tara ≤3% Tsawon jimla ≤1 × diamita na wafer
Ƙwayoyin Gefen Ta Haske Mai Tsanani		Babu wanda aka yarda da faɗin da zurfin ≥0.2mm			An yarda da 7, ≤1 mm kowanne
(TSD) Rushewar sukurori mai zare		≤500 cm-2		Ba a Samu Ba
(BPD) Rushewar jirgin sama na tushe		≤1000 cm-2		Ba a Samu Ba
Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani		Babu
Marufi		Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya
Bayanan kula:
1 Iyakokin lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. 2Ya kamata a duba ƙurajen a fuskar Si kawai. 3 Bayanan rabuwar wuri daga wafers ɗin KOH ne kawai.

XKH za ta ci gaba da zuba jari a bincike da ci gaba don haɓaka ci gaban abubuwan da aka yi amfani da su na silicon carbide mai inci 12 a cikin manyan girma, ƙarancin lahani da kuma daidaito mai yawa, yayin da XKH ke bincika aikace-aikacenta a fannoni masu tasowa kamar na'urorin lantarki na masu amfani (kamar na'urorin wutar lantarki don na'urorin AR/VR) da kuma ƙididdigar kwantum. Ta hanyar rage farashi da ƙara ƙarfin aiki, XKH za ta kawo wadata ga masana'antar semiconductor.