SiC Substrate N Nau'in 12 Babban Girman Aikace-aikacen RF Mai Aiki

Takaitaccen Bayani:

Tsarin SiC mai inci 12 yana wakiltar wani ci gaba mai ban mamaki a fannin fasahar kayan semiconductor, wanda ke ba da fa'idodi masu canzawa ga na'urorin lantarki masu amfani da wutar lantarki da aikace-aikacen mita masu yawa. A matsayin babban tsarin wafer silicon carbide da ake samu a kasuwa a masana'antar, tsarin SiC mai inci 12 yana ba da damar tattalin arziki mara misaltuwa yayin da yake kiyaye fa'idodin kayan na fa'idodin bandgap mai faɗi da halayen zafi na musamman. Idan aka kwatanta da wafers na SiC na yau da kullun na inci 6 ko ƙananan, dandamalin inci 12 yana ba da yanki mai amfani sama da 300% a kowace wafer, yana ƙara yawan amfanin ƙasa da rage farashin masana'antu ga na'urorin wutar lantarki. Wannan canjin girman yana nuna juyin halittar tarihi na wafers na silicon, inda kowace ƙara diamita ta kawo raguwar farashi mai mahimmanci da haɓaka aiki. Babban ƙarfin watsa wutar lantarki na SiC mai inci 12 (kusan 3 × na silicon) da ƙarfin filin fashewa mai mahimmanci ya sa ya zama mai mahimmanci musamman ga tsarin motocin lantarki na 800V na gaba, inda yake ba da damar ƙarin ƙananan na'urori masu ƙarfi da inganci. A cikin kayayyakin more rayuwa na 5G, babban saurin cika lantarki na kayan yana ba na'urorin RF damar aiki a manyan mitoci tare da ƙarancin asara. Daidaiton substrate ɗin da kayan aikin kera silicon da aka gyara shi ma yana sauƙaƙa karɓuwa daga masana'antun da ake da su, kodayake ana buƙatar kulawa ta musamman saboda tsananin taurin SiC (9.5 Mohs). Yayin da yawan samarwa ke ƙaruwa, ana sa ran substrate ɗin SiC mai inci 12 zai zama mizani na masana'antu don aikace-aikacen wutar lantarki mai ƙarfi, wanda ke haifar da ƙirƙira a cikin tsarin kera motoci, makamashi mai sabuntawa, da tsarin canza wutar lantarki na masana'antu.

Aika mana imel

Siffofi

Sigogi na fasaha

Bayanin Silinda Mai Inci 12 (SiC)
Matsayi		Samar da ZeroMPD Maki (Maki Z)	Tsarin Samarwa na Daidaitacce Maki (Maki na P)		Daraja ta Karya (Mataki na D)
diamita		30 0 mm ~ 1305mm
Kauri	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Tsarin Wafer		A gefen axis: 4.0° zuwa <1120 >±0.5° don 4H-N, A kan axis: <0001>±0.5° don 4H-SI
Yawan bututun micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Juriya	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Babban Tsarin Faɗi		{10-10} ±5.0°
Babban Tsawon Lebur	4H-N	Ba a Samu Ba
	4H-SI	Notch
Keɓewa a Gefen		3 mm
LTV/TTV/Bow/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Taurin kai		Yaren mutanen Poland Ra≤1 nm
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Fashewar Gefen Ta Hanyar Haske Mai Tsanani Faranti na Hex ta Haske Mai Tsanani Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi Abubuwan da ke tattare da Carbon na gani Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani		Babu Yankin da aka tara ≤0.05% Babu Yankin da aka tara ≤0.05% Babu			Tsawon jimilla ≤ 20 mm, tsawonsa ɗaya ≤ 2 mm Yankin da aka tara ≤0.1% Yankin da aka tara≤3% Yankin da aka tara ≤3% Tsawon jimla ≤1 × diamita na wafer
Ƙwayoyin Gefen Ta Haske Mai Tsanani		Babu wanda aka yarda da faɗin da zurfin ≥0.2mm			An yarda da 7, ≤1 mm kowanne
(TSD) Rushewar sukurori mai zare		≤500 cm-2		Ba a Samu Ba
(BPD) Rushewar jirgin sama na tushe		≤1000 cm-2		Ba a Samu Ba
Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani		Babu
Marufi		Akwatin Wafer Mai Yawa Ko Akwatin Wafer Guda Ɗaya
Bayanan kula:
1 Iyakokin lahani sun shafi dukkan saman wafer sai dai yankin da aka ware gefen. 2Ya kamata a duba ƙurajen a fuskar Si kawai. 3 Bayanan rabuwar wuri daga wafers ɗin KOH ne kawai.

Mahimman Sifofi

1. Babban Fa'ida: Tsarin SiC mai inci 12 (silicon carbide substrate mai inci 12) yana ba da babban yanki mai wafer guda ɗaya, yana ba da damar samar da ƙarin guntu a kowace wafer, ta haka rage farashin masana'antu da ƙara yawan amfanin ƙasa.
2. Kayan Aiki Mai Kyau: Juriyar zafin jiki mai yawa da ƙarfin filin lalacewa mai yawa na silicon carbide sun sa substrate mai inci 12 ya dace da aikace-aikacen wutar lantarki mai yawa da yawan mita, kamar inverters na EV da tsarin caji mai sauri.
3. Dacewar Sarrafawa: Duk da ƙalubalen da SiC ke fuskanta na tauri da sarrafawa, siC mai inci 12 yana samun ƙananan lahani a saman ta hanyar dabarun yankewa da gogewa, wanda ke inganta yawan amfanin na'urori.
4. Ingantaccen Tsarin Kula da Zafi: Tare da ingantaccen tsarin watsa zafi fiye da kayan da aka yi da silicon, substrate mai inci 12 yana magance zubar zafi a cikin na'urori masu ƙarfi, yana tsawaita tsawon rayuwar kayan aiki.

Babban Aikace-aikace

1. Motocin Lantarki: SiC substrate mai inci 12 (silicon carbide substrate mai inci 12) babban ɓangare ne na tsarin tuƙi na lantarki na zamani, wanda ke ba da damar inverters masu inganci waɗanda ke haɓaka kewayon aiki da rage lokacin caji.

2. Tashoshin Tushe na 5G: Manyan SiC substrates suna tallafawa na'urorin RF masu yawan mita, suna biyan buƙatun tashoshin tushe na 5G don babban iko da ƙarancin asara.

3. Kayayyakin Wutar Lantarki na Masana'antu: A cikin inverters na hasken rana da grid mai wayo, substrate mai inci 12 zai iya jure wa wutar lantarki mai girma yayin da yake rage asarar makamashi.

4. Lantarki na Masu Amfani: Na'urorin caji masu sauri na gaba da kuma samar da wutar lantarki na cibiyar bayanai na iya ɗaukar ƙananan SiC guda 12 don cimma ƙaramin girma da inganci mafi girma.

Ayyukan XKH

Mun ƙware a ayyukan sarrafawa na musamman don substrates SiC inci 12 (substrates silicon carbide inci 12), gami da:
1. Ragewa da Gogewa: Tsarin substrate mai ƙarancin lalacewa, mai faɗi sosai wanda aka tsara shi bisa ga buƙatun abokin ciniki, yana tabbatar da ingantaccen aikin na'urar.
2. Tallafin Ci gaban Epitaxial: Ayyukan wafer na epitaxial masu inganci don hanzarta kera guntu.
3. Tsarin Samfurin Ƙananan Rukuni: Yana tallafawa tabbatar da bincike da ci gaban fasaha ga cibiyoyin bincike da kamfanoni, yana rage zagayowar ci gaba.
4. Shawarwari kan Fasaha: Magani daga ƙarshe zuwa ƙarshe daga zaɓin kayan aiki zuwa inganta tsarin aiki, yana taimaka wa abokan ciniki su shawo kan ƙalubalen sarrafa SiC.
Ko don samar da kayayyaki da yawa ko kuma keɓancewa na musamman, ayyukanmu na SiC mai inci 12 sun dace da buƙatun aikinku, suna ƙarfafa ci gaban fasaha.