Wafer ɗin Sapphire mai inci 12 don ƙera Semiconductor mai girma

Wafer ɗin Sapphire mai inci 12 don kera na'urar Semiconductor mai girma

Takaitaccen Bayani:

An tsara wafer ɗin sapphire mai inci 12 don biyan buƙatun da ake da su na kera semiconductor mai girman gaske da kuma optoelectronic. Yayin da tsarin na'urori ke ci gaba da faɗaɗawa da kuma layukan samarwa zuwa ga manyan nau'ikan wafer, sapphire substrates masu diamita mai girma suna ba da fa'idodi bayyanannu a fannin yawan aiki, inganta yawan amfanin ƙasa, da kuma kula da farashi.

Aika mana imel

Siffofi

Cikakken Zane

Gabatarwar wafer mai inci 12 na saffir

An ƙera wafer ɗinmu mai inci 12 na sapphire daga Al₂O₃ mai tsarki, suna haɗa ƙarfin injina mai kyau, kwanciyar hankali na zafi, da ingancin saman. Ta hanyar ingantaccen haɓakar lu'ulu'u da sarrafa wafer daidai, waɗannan substrates suna ba da ingantaccen aiki don ci gaba da aikace-aikacen LED, GaN, da na musamman na semiconductor.

Halayen Kayan Aiki

Sapphire (mai lu'ulu'u ɗaya mai lu'ulu'u, Al₂O₃) sananne ne saboda kyawun halayensa na zahiri da na sinadarai. Wafers ɗin sapphire mai inci 12 suna gaji dukkan fa'idodin kayan sapphire yayin da suke samar da babban yanki mai amfani.

Muhimman halaye na kayan sun haɗa da:

Babban taurin kai da juriyar lalacewa
Kyakkyawan kwanciyar hankali na thermal da kuma babban wurin narkewa
Mafi kyawun juriya ga acid da alkalis
Babban haske mai haske daga UV zuwa IR tsawon rai
Kyakkyawan kaddarorin rufin lantarki

Waɗannan halaye sun sa wafers ɗin sapphire mai inci 12 ya dace da yanayin sarrafawa mai tsauri da kuma tsarin kera semiconductor mai zafi sosai.

Tsarin Masana'antu

Samar da wafers ɗin sapphire mai inci 12 yana buƙatar ci gaban lu'ulu'u mai zurfi da fasahar sarrafa su ta hanya mai kyau. Tsarin ƙera kayayyaki ya haɗa da:

Girman Crystal Guda ɗaya
Ana noma lu'ulu'u masu tsarki ta amfani da hanyoyi na zamani kamar KY ko wasu fasahohin girma lu'ulu'u masu girma da diamita, wanda ke tabbatar da daidaiton lu'ulu'u da kuma ƙarancin damuwa a ciki.
Siffa da Yanka Crystal
An yi siffar sapphire daidai kuma an yanka shi zuwa wafers mai inci 12 ta amfani da kayan aikin yankewa masu inganci don rage lalacewar ƙasa.
Lapping da gogewa
Ana amfani da hanyoyin yin amfani da matakai da yawa da kuma goge sinadarai (CMP) don cimma kyakkyawan tsatsa, lanƙwasa, da kuma daidaiton kauri.
Tsaftacewa da Dubawa
Kowace wafer mai inci 12 na sapphire tana yin tsaftacewa sosai da kuma duba sosai, gami da ingancin saman, TTV, baka, warp, da kuma nazarin lahani.

Aikace-aikace

Ana amfani da wafers ɗin sapphire mai inci 12 sosai a cikin fasahohin ci gaba da tasowa, gami da:

Babban ƙarfin LED da haske mai yawa
Na'urorin wutar lantarki masu tushen GaN da na'urorin RF
Mai ɗaukar kayan aikin Semiconductor da abubuwan rufewa
Tagogi masu gani da manyan kayan gani
Marufi na semiconductor mai ci gaba da kuma masu ɗaukar kaya na musamman

Babban diamita yana ba da damar samar da kayayyaki mafi girma da kuma inganta ingantaccen farashi a fannin samar da kayayyaki.

Fa'idodin Wafers ɗin Sapphire Inci 12

Babban yanki mai amfani don mafi girman fitarwa na na'ura a kowace wafer
Inganta daidaiton tsari da daidaito
Rage farashi ga kowace na'ura a cikin yawan samarwa
Kyakkyawan ƙarfin injina don manyan girma
Keɓancewa dalla-dalla don aikace-aikace daban-daban

Zaɓuɓɓukan Keɓancewa

Muna bayar da gyare-gyare masu sassauƙa don wafers ɗin sapphire inci 12, gami da:

Tsarin lu'ulu'u (C-plane, A-plane, R-plane, da sauransu)
Juriyar kauri da diamita
gogewa ta gefe ɗaya ko ta gefe biyu
Tsarin bayanin gefe da kuma tsarin chamfer
Bukatun ƙaiƙayi da lanƙwasa na saman

Sigogi	Ƙayyadewa	Bayanan kula
Diamita na Wafer	Inci 12 (mm 300)	Wafer mai girman diamita na yau da kullun
Kayan Aiki	Sapphire mai lu'ulu'u ɗaya (Al₂O₃)	Tsarkakakken abu, na lantarki/na gani
Tsarin Crystal	C-jirgin sama (0001), A-jirgin sama (11-20), R-jirgin sama (1-102)	Ana samun zaɓuɓɓukan gabatarwa
Kauri	430–500 μm	Ana samun kauri na musamman akan buƙata
Juriyar Kauri	±10 μm	Haƙuri mai ƙarfi ga na'urori masu ci gaba
Jimlar Bambancin Kauri (TTV)	≤10 μm	Tabbatar da daidaiton aiki a fadin wafer
Rukayya	≤50 μm	An auna shi a kan dukkan wafer ɗin
Warp	≤50 μm	An auna shi a kan dukkan wafer ɗin
Ƙarshen Fuskar	Mai goge gefe ɗaya (SSP) / Mai goge gefe biyu (DSP)	Babban farfajiya mai inganci na gani
Taurin saman (Ra)	≤0.5 nm (an goge shi)	Santsi na matakin atomic don ci gaban epitaxial
Bayanin Gefen	Chamfer / Gefen zagaye	Don hana guntuwar ƙarfe yayin sarrafawa
Daidaiton Gabatarwa	±0.5°	Yana tabbatar da ingantaccen ci gaban Layer na epitaxial
Yawan Lalacewa	<10 cm⁻²	An auna ta hanyar duba ido
Faɗi	≤2 μm / 100 mm	Yana tabbatar da daidaiton lithography da ci gaban epitaxial
Tsafta	Aji 100 - Aji 1000	Mai jituwa da ɗakin tsaftacewa
Watsawar Tantancewa	>85% (UV–IR)	Ya danganta da tsawon tsayi da kauri

Tambayoyin da ake yawan yi game da Wafer ɗin Sapphire Inci 12

T1: Menene kauri na yau da kullun na wafer sapphire inci 12?
A: Kauri na yau da kullun yana tsakanin 430 μm zuwa 500 μm. Haka kuma ana iya samar da kauri na musamman bisa ga buƙatun abokin ciniki.

Q2: Waɗanne hanyoyin lu'ulu'u ne ake samu don wafers ɗin sapphire mai inci 12?
A: Muna bayar da tsarin C-plane (0001), A-plane (11-20), da kuma R-plane (1-102). Sauran hanyoyin za a iya keɓance su bisa ga takamaiman buƙatun na'ura.

T3: Menene jimlar bambancin kauri (TTV) na wafer ɗin?
A: Wafer ɗinmu mai inci 12 na sapphire yawanci suna da TTV ≤10 μm, wanda ke tabbatar da daidaito a duk faɗin saman wafer don ƙera na'urori masu inganci.

game da Mu

XKH ta ƙware a fannin haɓaka fasaha, samarwa, da kuma sayar da gilashin gani na musamman da sabbin kayan lu'ulu'u. Kayayyakinmu suna ba da kayan lantarki na gani, na'urorin lantarki na masu amfani, da kuma sojoji. Muna ba da kayan gani na Sapphire, murfin ruwan tabarau na wayar hannu, yumbu, LT, Silicon Carbide SIC, Quartz, da wafers na lu'ulu'u na semiconductor. Tare da ƙwarewa mai ƙwarewa da kayan aiki na zamani, mun yi fice a fannin sarrafa samfura marasa tsari, da nufin zama babban kamfanin fasahar zamani na kayan lantarki na optoelectronic.