SiC silicon carbidena'urar tana nufin na'urar da aka yi da silicon carbide a matsayin kayan da aka samar.
Dangane da kaddarorin juriya daban-daban, an raba shi zuwa na'urorin wutar lantarki na silicon carbide mai sarrafawa da kumasemi-insulated silicon carbideNa'urorin RF.
Babban siffofin na'urori da aikace-aikacen silicon carbide
Babban fa'idodin SiC akanSi kayansune:
SiC yana da tazara mai girman Si sau 3, wanda zai iya rage fitar da ruwa da kuma ƙara juriyar zafin jiki.
SiC yana da ƙarfin filin rushewa sau 10 fiye da Si, yana iya inganta yawan halin yanzu, mitar aiki, juriya ƙarfin wutar lantarki da rage asarar kunnawa, ya fi dacewa da aikace-aikacen wutar lantarki mai girma.
SiC yana da saurin juyewar electron sau biyu fiye da Si, don haka yana iya aiki a mafi yawan mita.
SiC yana da sau uku na ƙarfin zafi na Si, mafi kyawun aikin watsa zafi, yana iya tallafawa yawan ƙarfi mai yawa da rage buƙatun watsa zafi, yana sa na'urar ta zama mai sauƙi.
Substrate mai jurewa
Substrate mai aiki: Ta hanyar cire ƙazanta daban-daban a cikin lu'ulu'u, musamman ƙazanta marasa zurfi, don cimma babban juriyar lu'ulu'u.
Mai amfani da wutar lantarkisilicon carbide substrateWafer ɗin SiC
Na'urar samar da wutar lantarki ta silicon carbide mai sarrafawa tana samuwa ne ta hanyar girman layin epitaxial na silicon carbide akan substrate mai sarrafawa, ana ƙara sarrafa takardar epitaxial ta silicon carbide, gami da samar da diodes na Schottky, MOSFET, IGBT, da sauransu, waɗanda galibi ana amfani da su a cikin motocin lantarki, samar da wutar lantarki ta photovoltaic, jigilar jirgin ƙasa, cibiyar bayanai, caji da sauran kayayyakin more rayuwa. Fa'idodin aiki sune kamar haka:
Halayen matsin lamba mai ƙarfi. Ƙarfin filin lantarki na lalacewar silicon carbide ya fi sau 10 fiye da silicon, wanda hakan ke sa juriyar matsin lamba na na'urorin silicon carbide ya fi na na'urorin silicon masu kama da juna girma.
Ingantattun halaye na zafin jiki mai yawa. Silicon carbide yana da ƙarfin jure zafi fiye da silicon, wanda hakan ke sa watsawar zafi ta na'urar ta fi sauƙi kuma iyakance zafin aiki ya fi girma. Juriyar zafin jiki mai yawa na iya haifar da ƙaruwa mai yawa a yawan wutar lantarki, yayin da rage buƙatun tsarin sanyaya, ta yadda tashar za ta iya zama mai sauƙi da kuma ƙarami.
Ƙarancin amfani da makamashi. ① Na'urar silicon carbide tana da ƙarancin juriya ga wuta da ƙarancin asarar wuta; (2) Ruwan fitar da na'urorin silicon carbide ya ragu sosai fiye da na na'urorin silicon, wanda hakan ke rage asarar wuta; ③ Babu wani abin da ke faruwa a lokacin da ake kashe na'urorin silicon carbide, kuma asarar sauyawar ta yi ƙasa, wanda hakan ke inganta yawan sauyawar aikace-aikacen da ake amfani da su.
Substrate na SiC mai rufi da rabi: Ana amfani da N doping don sarrafa juriyar samfuran sarrafawa daidai ta hanyar daidaita alaƙar da ke tsakanin yawan sinadarin nitrogen doping, ƙimar girma da juriyar lu'ulu'u.
Babban tsarkin kayan semi-insulating abu
Ana ƙara yin na'urorin RF masu tushen silicon carbon ta hanyar haɓaka Layer ɗin epitaxial na gallium nitride akan substrate ɗin silicon carbide mai rufi don shirya takardar epitaxial na silicon nitride, gami da HEMT da sauran na'urorin RF na gallium nitride, waɗanda galibi ake amfani da su a cikin sadarwa ta 5G, sadarwa ta abin hawa, aikace-aikacen tsaro, watsa bayanai, da sararin samaniya.
Yawan kwararar lantarki mai cike da kayan silicon carbide da gallium nitride ya ninka na silicon sau 2.0 da 2.5, don haka yawan aiki na na'urorin silicon carbide da gallium nitride ya fi na na'urorin silicon na gargajiya. Duk da haka, kayan gallium nitride yana da rashin kyawun juriyar zafi, yayin da silicon carbide yana da kyakkyawan juriyar zafi da kuma juriyar zafi, wanda zai iya rama mummunan juriyar zafi na na'urorin gallium nitride, don haka masana'antar tana ɗaukar silicon carbide mai rabin-insulated a matsayin substrate, kuma ana shuka layin gan epitaxial akan silicon carbide substrate don ƙera na'urorin RF.
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Lokacin Saƙo: Yuli-16-2024