SiC silicon carbidena'urar tana nufin na'urar da aka yi da siliki carbide azaman ɗanyen abu.
Dangane da kaddarorin juriya daban-daban, an raba shi zuwa na'urorin wutar lantarki na silicon carbide daSemi-insulated silicon carbideRF na'urorin.
Babban nau'ikan na'ura da aikace-aikacen silicon carbide
Babban fa'idodin SiC akanSi kayansu ne:
SiC yana da ratar bandeji sau 3 na Si, wanda zai iya rage ɗigowa da haɓaka juriyar zafin jiki.
SiC yana da sau 10 na raguwar ƙarfin filin Si, zai iya inganta yawan halin yanzu, mitar aiki, jure wa ƙarfin lantarki da rage asarar kashewa, mafi dacewa da aikace-aikacen wutar lantarki mai girma.
SiC yana da saurin juyewar sikelin lantarki sau biyu na Si, don haka yana iya aiki a mitoci mafi girma.
SiC yana da sau 3 na zafin zafin jiki na Si, mafi kyawun aikin watsar da zafi, zai iya tallafawa ƙarfin ƙarfin ƙarfi da rage buƙatun zafi, yana sa na'urar ta yi haske.
Conductive substrate
Matsakaicin ɗabi'a: Ta hanyar cire ƙazanta daban-daban a cikin kristal, musamman ƙazantattun matakan ƙazanta, don cimma babban juriya na kristal.
Gudanarwasilicon carbide substrateSiC wafer
Conductive silicon carbide ikon na'urar ne ta hanyar girma na silicon carbide epitaxial Layer a kan conductive substrate, da silicon carbide epitaxial takardar da aka kara sarrafa, ciki har da samar da Schottky diodes, MOSFET, IGBT, da dai sauransu, yafi amfani a lantarki motocin, photovoltaic ikon samar, dogo wucewa, data cibiyar, caji da sauran kayayyakin more rayuwa. Amfanin aikin sune kamar haka:
Ingantattun halayen matsi. Ƙarfin filin lantarki na silicon carbide ya fi sau 10 fiye da na silicon, wanda ke sa ƙarfin juriya na na'urorin silicon carbide ya fi girma fiye da na na'urorin silicon daidai.
Mafi kyawun halayen zafin jiki. Silicon carbide yana da haɓakar zafin jiki mafi girma fiye da siliki, wanda ke sa zafin na'urar ya fi sauƙi kuma iyakar zafin aiki mafi girma. Babban juriya na zafin jiki na iya haifar da haɓakar ƙarfin ƙarfin ƙarfi, yayin da rage buƙatun akan tsarin sanyaya, ta yadda tashar zata iya zama mafi sauƙi kuma mai sauƙi.
Ƙananan amfani da makamashi. ① Silicon carbide na'urar tana da ƙarancin juriya da ƙarancin hasara; (2) Yayyo halin yanzu na silicon carbide na'urorin an rage muhimmanci fiye da na silicon na'urorin, don haka rage wutar lantarki; ③ Babu wani abu na yau da kullun na wutsiya a cikin tsarin kashe na'urorin silicon carbide, kuma asarar canzawa ba ta da yawa, wanda ke haɓaka saurin sauyawa na aikace-aikacen aiki.
Semi-insulated SiC Substrate: N doping ana amfani da daidai sarrafa juriya na conductive kayayyakin ta calibrating daidai alakar tsakanin nitrogen doping maida hankali, girma kudi da crystal resistivity.
High tsarki Semi-insulating substrate abu
Semi-insulated silicon carbon tushen RF na'urorin ana ƙara yin ta girma gallium nitride epitaxial Layer a kan Semi-insulated silicon carbide substrate don shirya silicon nitride epitaxial takardar, ciki har da HEMT da sauran gallium nitride RF na'urorin, yafi amfani a 5G sadarwa, abin hawa sadarwa, tsaro aikace-aikace, data watsa, sararin samaniya.
Madaidaicin ƙimar siliki na siliki da kayan gallium nitride shine 2.0 da 2.5 na silicon bi da bi, don haka mitar aiki na silicon carbide da gallium nitride na'urorin ya fi na na'urorin silicon na gargajiya. Duk da haka, gallium nitride abu yana da hasara na rashin zafi juriya, yayin da silicon carbide yana da kyau zafi juriya da thermal conductivity, wanda zai iya gyara ga matalauta zafi juriya na gallium nitride na'urorin, don haka masana'antu daukan Semi-insulated silicon carbide a matsayin substrate, kuma gan epitaxial Layer aka girma a kan silicon carbide substrate don kera RF na'urorin.
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Lokacin aikawa: Yuli-16-2024