Wafers ɗin SOI (Silicon-On-Insulator)suna wakiltar wani abu na musamman na semiconductor wanda ke ɗauke da wani sirara mai silicon wanda aka samar a saman wani Layer na oxide mai hana ruwa shiga. Wannan tsarin sandwich na musamman yana ba da ingantaccen aiki mai mahimmanci ga na'urorin semiconductor.
Tsarin Gine-gine:
Layer na Na'ura (Silikon Sama):
Kauri ya kama daga nanometer da yawa zuwa micrometers, wanda ke aiki a matsayin Layer mai aiki don ƙera transistor.
Layer Oxide da aka binne (AKWATIN):
Wani Layer mai hana silicon dioxide (kauri 0.05-15μm) wanda ke raba layin na'urar daga substrate ta hanyar lantarki.
Tushen ƙasa:
Babban silicon (kauri 100-500μm) yana ba da tallafin injiniya.
Dangane da fasahar tsarin shiri, manyan hanyoyin aiwatar da wafers na silicon SOI za a iya rarraba su kamar haka: SIMOX (fasahar keɓewa ta allurar iskar oxygen), BESOI (fasahar rage radadi), da Smart Cut (fasahar cire radadi mai hankali).
SIMOX (Fasahar keɓewa ta allurar iskar oxygen) wata dabara ce da ta ƙunshi allurar ions mai ƙarfi a cikin wafers ɗin silicon don samar da wani Layer da aka saka a silicon dioxide, wanda daga nan ake sanya shi a cikin zafin jiki mai zafi don gyara lahani a layin. Ciki shine allurar iskar oxygen ta ion kai tsaye don samar da iskar oxygen da aka binne a saman.
BESOI (Fasahar Magance Matsalolin Haɗawa) ta ƙunshi haɗa wafers guda biyu na silicon sannan a rage guda ɗaya ta hanyar niƙa na inji da kuma ƙera sinadarai don samar da tsarin SOI. Tushen yana cikin haɗuwa da rage su.
Smart Cut (fasahar Exfoliation ta Intelligent) tana samar da Layer na exfoliation ta hanyar allurar hydrogen ion. Bayan haɗawa, ana yin maganin zafi don cire silicon wafer tare da layin hydrogen ion, yana samar da Layer silicon mai siriri sosai. Ana cire hydrogen allurar.
A halin yanzu, akwai wata fasaha da aka sani da SIMBOND (fasahar haɗin iskar oxygen), wadda Xinao ya ƙirƙiro. A zahiri, hanya ce da ta haɗa fasahar keɓewa da haɗin iskar oxygen. A cikin wannan hanyar fasaha, ana amfani da iskar oxygen da aka allura a matsayin ƙaramin shinge, kuma ainihin layin oxygen da aka binne shine layin iskar oxygen na thermal. Saboda haka, yana inganta sigogi a lokaci guda kamar daidaiton silicon na sama da ingancin layin oxygen da aka binne.
Wafers ɗin silicon na SOI da aka ƙera ta hanyoyi daban-daban na fasaha suna da sigogi daban-daban na aiki kuma sun dace da yanayi daban-daban na aikace-aikace.
Ga taƙaitaccen bayani game da fa'idodin aikin wafers ɗin silicon na SOI, tare da fasalulluka na fasaha da yanayin aikace-aikacensu na ainihi. Idan aka kwatanta da silicon na gargajiya, SOI yana da fa'idodi masu mahimmanci a cikin daidaiton gudu da amfani da wutar lantarki. (PS: Aikin FD-SOI na 22nm yana kusa da na FinFET, kuma farashin ya ragu da kashi 30%.)
| Amfanin Aiki | Ka'idar Fasaha | Bayyanar Musamman | Yanayin Aikace-aikace na yau da kullun |
| Ƙarancin Ƙarfin Parasitic | Layer mai rufi (AKWATIN) yana toshe haɗin caji tsakanin na'urar da substrate | Saurin sauyawa ya karu da kashi 15%-30%, yawan amfani da wutar lantarki ya ragu da kashi 20%-50% | 5G RF, Kwamfutocin sadarwa masu yawan mita |
| Rage fitar da ruwa | Layer mai rufewa yana hana hanyoyin kwararar ruwa | Rage fitar da wutar lantarki da kashi >90%, tsawaita rayuwar batirin | Na'urorin IoT, Kayan lantarki masu amfani |
| Ingantaccen Taurin Haske | Tsarin rufewa yana toshe tarin caji da radiation ke haifarwa | Juriyar radiation ta inganta sau 3-5, kuma an rage rikice-rikicen da suka faru sau ɗaya | Jiragen Sama, kayan aikin masana'antar nukiliya |
| Sarrafa Tasirin Tashar Gajere | Siraran silikon yana rage tsangwama tsakanin filin lantarki tsakanin magudanar ruwa da tushe | Ingantaccen kwanciyar hankali na ƙarfin lantarki, ingantaccen gangaren ƙasa | Cibiyoyin dabaru na nodes masu ci gaba (<14nm) |
| Ingantaccen Gudanar da Zafin Jiki | Layer mai hana ruwa yana rage haɗin wutar lantarki | Rage tarin zafi da kashi 30%, ƙarancin zafin aiki da ya kai 15-25°C | 3D ICs, Na'urorin lantarki na mota |
| Ingantaccen Sauti Mai Girma | Rage ƙarfin ƙwayoyin cuta da kuma inganta motsi na masu ɗaukar kaya | Jinkirin da ya ragu da kashi 20%, yana tallafawa aikin siginar > 30GHz | Sadarwar mmWave, Kwamfutocin Sadarwar Tauraron Dan Adam |
| Ƙarin Sauƙin Zane | Ba a buƙatar yin amfani da maganin rijiya ba, yana taimakawa wajen nuna son kai ga baya | Matakan tsari kaɗan 13%-20%, yawan haɗin kai mafi girma 40% | Na'urori masu auna sigina iri-iri, Na'urori masu auna sigina |
| Garkuwar Jiki | Mahadar PN mai rufewa tana raba ƙwayoyin cuta | Ƙarfin wutar lantarki mai haɗa wutar lantarki ya ƙaru zuwa >100mA | Na'urorin wutar lantarki masu ƙarfin lantarki |
A taƙaice, manyan fa'idodin SOI sune: yana aiki da sauri kuma yana da ƙarfi sosai.
Saboda waɗannan halayen aiki na SOI, yana da fa'idodi da yawa a fannoni waɗanda ke buƙatar kyakkyawan aikin mita da aikin amfani da wutar lantarki.
Kamar yadda aka nuna a ƙasa, bisa ga rabon filayen aikace-aikace da suka dace da SOI, za a iya ganin cewa RF da na'urorin wutar lantarki suna da mafi yawan kasuwar SOI.
| Filin Aikace-aikace | Raba Kasuwa |
| RF-SOI (Mitar Rediyo) | Kashi 45% |
| Power SOI | Kashi 30% |
| FD-SOI (An gama aiki gaba ɗaya) | 15% |
| SOI na gani | 8% |
| Na'urar firikwensin SOI | 2% |
Tare da ci gaban kasuwanni kamar sadarwa ta wayar hannu da tuƙi mai cin gashin kansa, ana kuma sa ran wafers ɗin silicon na SOI za su ci gaba da samun wani ci gaba.
XKH, a matsayinta na babbar mai ƙirƙira a fasahar Silicon-On-Insulator (SOI), tana isar da cikakkun hanyoyin magance matsalar SOI daga bincike da haɓaka yawan samarwa ta amfani da hanyoyin masana'antu masu jagorancin masana'antu. Cikakken fayil ɗinmu ya haɗa da wafers ɗin SOI 200mm/300mm waɗanda suka haɗa da nau'ikan RF-SOI, Power-SOI da FD-SOI, tare da ingantaccen kula da inganci wanda ke tabbatar da daidaiton aiki na musamman (daidaiton kauri a cikin ±1.5%). Muna bayar da mafita na musamman tare da kauri na Layer oxide (BOX) wanda aka binne daga 50nm zuwa 1.5μm da ƙayyadaddun ƙayyadaddun juriya daban-daban don biyan takamaiman buƙatu. Tare da amfani da ƙwarewar fasaha ta shekaru 15 da sarkar samar da kayayyaki mai ƙarfi ta duniya, muna samar da kayan SOI masu inganci ga manyan masana'antun semiconductor a duk duniya, wanda ke ba da damar sabbin fasahohin guntu a cikin sadarwa ta 5G, kayan lantarki na mota, da aikace-aikacen fasahar wucin gadi.
XKH'Wafers ɗin SOI:
Lokacin Saƙo: Afrilu-24-2025