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Cikakken Jagora ga Wafers na Silicon Carbide/SiC

Takaitaccen bayanin SiC wafer

 Wafers ɗin silicon carbide (SiC)sun zama abin da aka fi so don na'urorin lantarki masu ƙarfi, mita mai yawa, da zafin jiki mai yawa a cikin sassan kera motoci, makamashi mai sabuntawa, da sararin samaniya. Fayil ɗinmu ya ƙunshi manyan nau'ikan nau'ikan da tsarin doping - 4H-N da aka yi da nitrogen (4H-N), semi-insulating mai ƙarfi (HPSI), 3C-N da aka yi da nitrogen (3C-N), da nau'in p-type 4H/6H (4H/6H-P) - waɗanda aka bayar a cikin matakai uku masu inganci: PRIME (wanda aka goge gaba ɗaya, substrates-grade na na'ura), DUMMY (wanda aka goge ko ba a goge shi ba don gwaje-gwajen tsari), da RESEARCH (matakan epi na musamman da bayanan doping don R&D). Diamita na wafer ya kai 2″, 4″, 6″, 8″, da 12″ don dacewa da kayan aikin da suka gabata da na zamani. Muna kuma samar da monocrystalline boules da lu'ulu'u iri masu daidaitawa daidai don tallafawa haɓakar lu'ulu'u a cikin gida.

Wafers ɗinmu na 4H-N suna da yawan masu ɗaukar kaya daga 1×10¹⁶ zuwa 1×10¹⁹ cm⁻³ da juriya na 0.01–10 Ω·cm, suna ba da kyakkyawan yanayin motsi na lantarki da wuraren rushewa sama da MV/cm 2—wanda ya dace da Schottky diodes, MOSFETs, da JFETs. Abubuwan HPSI sun wuce juriya na 1×10¹² Ω·cm tare da yawan bututun micropipe ƙasa da 0.1 cm⁻², wanda ke tabbatar da ƙarancin zubewa ga na'urorin RF da microwave. Cubic 3C-N, wanda ake samu a cikin tsarin 2″ da 4″, yana ba da damar heteroepitaxy akan silicon kuma yana goyan bayan sabbin aikace-aikacen photonic da MEMS. Wafers ɗin P-type 4H/6H-P, wanda aka haɗa da aluminum zuwa 1×10¹⁶–5×10¹⁸ cm⁻³, yana sauƙaƙe tsarin kayan aiki masu dacewa.

Wafers ɗin SiC, PRIME suna yin gogewa ta hanyar sinadarai da na injiniya zuwa <0.2 nm RMS mai kauri, jimlar bambancin kauri ƙasa da 3 µm, kuma suna da ƙasa da µm. Substrates ɗin DUMMY suna hanzarta haɗuwa da gwaje-gwajen marufi, yayin da wafers ɗin RESEARCH suna da kauri na epi-layer na 2-30 µm da kuma allurar da aka keɓance. Duk samfuran an tabbatar da su ta hanyar diffraction na X-ray (rocking curve <30 arcsec) da Raman spectroscopy, tare da gwaje-gwajen lantarki - ma'aunin Hall, bayanin martaba na C-V, da kuma duba bututun micropipe - suna tabbatar da bin ƙa'idodin JEDEC da SEMI.

Ana shuka ƙananan bishiyoyi har zuwa diamita 150 mm ta hanyar PVT da CVD tare da yawan tarkace ƙasa da 1 × 10³ cm⁻² da ƙarancin adadin ƙananan bututu. Ana yanke lu'ulu'u na iri a cikin 0.1° na axis na c don tabbatar da ci gaba mai maimaitawa da yawan amfanin ƙasa mai yawa.

Ta hanyar haɗa nau'ikan nau'ikan da yawa, nau'ikan doping, ma'aunin inganci, girman wafer na SiC, da kuma samar da boule da iri-crystal a cikin gida, dandamalin substrate ɗinmu na SiC yana sauƙaƙe sarƙoƙin samar da kayayyaki kuma yana haɓaka haɓaka na'urori don motocin lantarki, grids masu wayo, da aikace-aikacen muhalli masu tsauri.

Takaitaccen bayanin SiC wafer

 Wafers ɗin silicon carbide (SiC)sun zama abin da aka fi so a SiC don na'urorin lantarki masu ƙarfi, mita mai yawa, da zafin jiki a cikin sassan motoci, makamashi mai sabuntawa, da sararin samaniya. Fayil ɗinmu ya ƙunshi manyan nau'ikan polytypes da tsare-tsaren doping—4H-N da aka yi da nitrogen, mai tsafta mai tsafta (HPSI), mai ɗauke da nitrogen 3C (3C-N), da nau'in p 4H/6H (4H/6H-P)—wanda aka bayar a cikin matakai uku masu inganci: SiC waferPRIME (wanda aka goge shi sosai, wanda aka yi wa ado da kayan aiki), DUMMY (wanda aka goge shi ko ba a goge shi ba don gwaje-gwajen tsari), da RESEARCH (matakan epi na musamman da bayanan doping don R&D). Diamita na SiC Wafer ya kai 2″, 4″, 6″, 8″, da 12″ don dacewa da kayan aikin da aka riga aka yi da kuma kayan aikin zamani. Muna kuma samar da monocrystalline boules da kuma nau'ikan iri da aka daidaita daidai don tallafawa ci gaban lu'ulu'u a cikin gida.

Wafers ɗinmu na 4H-N SiC suna da yawan masu ɗaukar kaya daga 1×10¹⁶ zuwa 1×10¹⁹ cm⁻³ da juriya na 0.01–10 Ω·cm, suna ba da kyakkyawan yanayin motsi na lantarki da wuraren rushewa sama da MV/cm 2—wanda ya dace da Schottky diodes, MOSFETs, da JFETs. Abubuwan HPSI sun wuce juriya na 1×10¹² Ω·cm tare da yawan bututun micropipe ƙasa da 0.1 cm⁻², wanda ke tabbatar da ƙarancin zubewa ga na'urorin RF da microwave. Cubic 3C-N, wanda ake samu a cikin tsarin 2″ da 4″, yana ba da damar heteroepitaxy akan silicon kuma yana goyan bayan sabbin aikace-aikacen photonic da MEMS. Wafers ɗin SiC P-type 4H/6H-P, wanda aka haɗa da aluminum zuwa 1×10¹⁶–5×10¹⁸ cm⁻³, yana sauƙaƙe tsarin kayan aiki masu dacewa.

Wafers ɗin SiC wafer PRIME suna yin gogewa ta hanyar sinadarai da na injiniya zuwa <0.2 nm RMS mai kauri, jimlar bambancin kauri ƙasa da 3 µm, kuma suna da ƙasa da µm. Substrates ɗin DUMMY suna hanzarta haɗuwa da gwaje-gwajen marufi, yayin da wafers ɗin RESEARCH suna da kauri na epi-layer na 2-30 µm da kuma allurar da aka keɓance. Duk samfuran an tabbatar da su ta hanyar diffraction na X-ray (rocking curve <30 arcsec) da Raman spectroscopy, tare da gwaje-gwajen lantarki—ma'aunin Hall, bayanin C–V, da kuma duba bututun micropipe—suna tabbatar da bin ƙa'idodin JEDEC da SEMI.

Ana shuka ƙananan bishiyoyi har zuwa diamita 150 mm ta hanyar PVT da CVD tare da yawan tarkace ƙasa da 1 × 10³ cm⁻² da ƙarancin adadin ƙananan bututu. Ana yanke lu'ulu'u na iri a cikin 0.1° na axis na c don tabbatar da ci gaba mai maimaitawa da yawan amfanin ƙasa mai yawa.

Ta hanyar haɗa nau'ikan nau'ikan da yawa, nau'ikan doping, ma'aunin inganci, girman wafer na SiC, da kuma samar da boule da iri-crystal a cikin gida, dandamalin substrate ɗinmu na SiC yana sauƙaƙe sarƙoƙin samar da kayayyaki kuma yana haɓaka haɓaka na'urori don motocin lantarki, grids masu wayo, da aikace-aikacen muhalli masu tsauri.

Hoton SiC wafer

Takardar bayanai ta SiC wafer mai inci 6 mai girman inci 4H-N

 

Takardar bayanai ta SiC wafers mai inci 6
Sigogi Ƙananan Sigogi Matsayin Z Maki na P Daraja ta D
diamita   149.5–150.0 mm 149.5–150.0 mm 149.5–150.0 mm
Kauri 4H‑N 350 µm ± 15 µm 350 µm ± 25 µm 350 µm ± 25 µm
Kauri 4H‑SI 500 µm ± 15 µm 500 µm ± 25 µm 500 µm ± 25 µm
Tsarin Wafer   A gefen axis: 4.0° zuwa <11-20> ±0.5° (4H-N); A kan axis: <0001> ±0.5° (4H-SI) A gefen axis: 4.0° zuwa <11-20> ±0.5° (4H-N); A kan axis: <0001> ±0.5° (4H-SI) A gefen axis: 4.0° zuwa <11-20> ±0.5° (4H-N); A kan axis: <0001> ±0.5° (4H-SI)
Yawan bututun micropipe 4H‑N ≤ 0.2 cm⁻² ≤ 2 cm⁻² ≤ 15 cm⁻²
Yawan bututun micropipe 4H‑SI ≤ 1 cm⁻² ≤ 5 cm⁻² ≤ 15 cm⁻²
Juriya 4H‑N 0.015–0.024 Ω·cm 0.015–0.028 Ω·cm 0.015–0.028 Ω·cm
Juriya 4H‑SI ≥ 1×10¹⁰ Ω·cm ≥ 1×10⁵ Ω·cm  
Babban Tsarin Faɗi   [10-10] ± 5.0° [10-10] ± 5.0° [10-10] ± 5.0°
Babban Tsawon Lebur 4H‑N 47.5 mm ± 2.0 mm    
Babban Tsawon Lebur 4H‑SI Notch    
Keɓewa a Gefen     3 mm  
Warp/LTV/TTV/Bow   ≤2.5µm / ≤6 µm / ≤25 µm / ≤35 µm ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm  
Taurin kai Yaren mutanen Poland Ra ≤ 1 nm    
Taurin kai CMP Ra ≤ 0.2 nm   Ra ≤ 0.5 nm
Fashewar Gefen   Babu   Tsawon jimilla ≤ 20 mm, guda ɗaya ≤ 2 mm
Faranti na Hex   Yankin da aka tara ≤ 0.05% Yankin da aka tara ≤ 0.1% Yankin da aka tara ≤ 1%
Yankunan da aka fi amfani da su   Babu Yankin da aka tara ≤ 3% Yankin da aka tara ≤ 3%
Haɗin Carbon   Yankin da aka tara ≤ 0.05%   Yankin da aka tara ≤ 3%
Ƙirga-ƙara a saman   Babu   Tsawon jimillar ≤ 1 × diamita na wafer
Ƙwayoyin Gefen   Babu wanda aka yarda ≥ 0.2 mm faɗi da zurfi   Har zuwa guntu 7, ≤ 1 mm kowanne
TSD (Ballewar Sukurin Zaren)   ≤ 500 cm⁻²   Ba a Samu Ba
BPD (Ballewar Tashar Jiragen Sama)   ≤ 1000 cm⁻²   Ba a Samu Ba
Gurɓatar Fuskar   Babu    
Marufi   Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer

Takardar bayanai ta SiC wafer mai inci 4 mai girman inci 4H-N

 

Takardar bayanai ta SiC wafer mai inci 4
Sigogi Sifili Samar da MPD Matsakaicin Matsayin Samarwa (Matsayin P) Daraja ta D (D)
diamita 99.5 mm–100.0 mm
Kauri (4H-N) 350 µm±15 µm   350 µm±25 µm
Kauri (4H-Si) 500 µm±15 µm   500 µm±25 µm
Tsarin Wafer A gefen axis: 4.0° zuwa <1120> ±0.5° don 4H-N; A kan axis: <0001> ±0.5° don 4H-Si    
Yawan Bututun Micro (4H-N) ≤0.2 cm⁻² ≤2 cm⁻² ≤15 cm⁻²
Yawan Bututun Micro (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Juriya (4H-N)   0.015–0.024 Ω·cm 0.015–0.028 Ω·cm
Juriya (4H-Si) ≥1E10 Ω·cm   ≥1E5 Ω·cm
Babban Tsarin Faɗi   [10-10] ±5.0°  
Babban Tsawon Lebur   32.5 mm ±2.0 mm  
Tsawon Lebur na Biyu   18.0 mm ±2.0 mm  
Tsarin Faɗi na Biyu   Fuskar silicon sama: 90° CW daga babban lebur ±5.0°  
Keɓewa a Gefen   3 mm  
LTV/TTV/Baw Warp ≤2.5µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Taurin kai Ra na Poland ≤1 nm; CMP Ra ≤0.2 nm   Ra ≤0.5 nm
Fashewar Gefen Ta Hanyar Haske Mai Tsanani Babu Babu Tsawon jimilla ≤10 mm; tsawonsa ɗaya ≤2 mm
Faranti na Hex ta Haske Mai Tsanani Yankin da aka tara ≤0.05% Yankin da aka tara ≤0.05% Yankin da aka tara ≤0.1%
Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi Babu   Yankin da aka tara ≤3%
Abubuwan da ke tattare da Carbon na gani Yankin da aka tara ≤0.05%   Yankin da aka tara ≤3%
Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani Babu   Tsawon jimillar ≤1 diamita na wafer
Ƙwayoyin Gefen Ta Haske Mai Tsanani Babu wanda aka yarda da shi ≥0.2 mm faɗi da zurfi   An yarda da 5, ≤1 mm kowanne
Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani Babu    
Rushewar sukurori mai zare ≤500 cm⁻² Ba a Samu Ba  
Marufi Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer

Takardar bayanai ta SiC wafer nau'in HPSI mai inci 4

 

Takardar bayanai ta SiC wafer nau'in HPSI mai inci 4
Sigogi Sifili Matsayin Samarwa na MPD (Matsayin Z) Matsakaicin Matsayin Samarwa (Matsayin P) Daraja ta D (D)
diamita   99.5–100.0 mm  
Kauri (4H-Si) 500 µm ±20 µm   500 µm ±25 µm
Tsarin Wafer A gefen axis: 4.0° zuwa <11-20> ±0.5° don 4H-N; A kan axis: <0001> ±0.5° don 4H-Si
Yawan Bututun Micro (4H-Si) ≤1 cm⁻² ≤5 cm⁻² ≤15 cm⁻²
Juriya (4H-Si) ≥1E9 Ω·cm   ≥1E5 Ω·cm
Babban Tsarin Faɗi (10-10) ±5.0°
Babban Tsawon Lebur 32.5 mm ±2.0 mm
Tsawon Lebur na Biyu 18.0 mm ±2.0 mm
Tsarin Faɗi na Biyu Fuskar silicon sama: 90° CW daga babban lebur ±5.0°
Keɓewa a Gefen   3 mm  
LTV/TTV/Baw Warp ≤3µm/≤5 µm/≤15 µm/≤30 µm   ≤10 µm/≤15 µm/≤25 µm/≤40 µm
Taurin kai (fuskar C) Yaren mutanen Poland Ra ≤1 nm  
Taurin fuska (Si face) CMP Ra ≤0.2 nm Ra ≤0.5 nm
Fashewar Gefen Ta Hanyar Haske Mai Tsanani Babu   Tsawon jimilla ≤10 mm; tsawonsa ɗaya ≤2 mm
Faranti na Hex ta Haske Mai Tsanani Yankin da aka tara ≤0.05% Yankin da aka tara ≤0.05% Yankin da aka tara ≤0.1%
Yankunan da aka yi amfani da su ta hanyar haske mai ƙarfi Babu   Yankin da aka tara ≤3%
Abubuwan da ke tattare da Carbon na gani Yankin da aka tara ≤0.05%   Yankin da aka tara ≤3%
Ƙirƙirar saman Silicon ta hanyar Haske Mai Tsanani Babu   Tsawon jimillar ≤1 diamita na wafer
Ƙwayoyin Gefen Ta Haske Mai Tsanani Babu wanda aka yarda da shi ≥0.2 mm faɗi da zurfi   An yarda da 5, ≤1 mm kowanne
Gurɓatar Fuskar Silicon Ta Hanyar Haske Mai Tsanani Babu   Babu
Rushewar Sukurin Zaren ≤500 cm⁻² Ba a Samu Ba  
Marufi   Kaset ɗin wafer mai yawa ko akwati ɗaya mai wafer  

Aikace-aikacen SiC wafer

 

  • Modules na Wutar Lantarki na SiC Wafer don Masu Canza EV
    MOSFETs da diodes na SiC wafer waɗanda aka gina a kan manyan substrates na SiC wafer suna isar da asarar sauyawa mai ƙarancin ƙarfi. Ta hanyar amfani da fasahar SiC wafer, waɗannan na'urorin wutar lantarki suna aiki a mafi girman ƙarfin lantarki da yanayin zafi, wanda ke ba da damar inverters na jan hankali mafi inganci. Haɗa wafer na SiC a cikin matakan wutar lantarki yana rage buƙatun sanyaya da sawun ƙafa, yana nuna cikakken damar ƙirƙirar wafer na SiC.

  • Na'urorin RF da 5G masu yawan mita akan SiC Wafer
    Amplifiers da switches na RF da aka ƙera akan dandamalin SiC wafer mai rufewa suna nuna ingantaccen watsa wutar lantarki da ƙarfin lantarki mai lalacewa. Substrate ɗin SiC wafer yana rage asarar dielectric a mitoci na GHz, yayin da ƙarfin kayan SiC wafer yana ba da damar aiki mai ɗorewa a ƙarƙashin yanayin zafi mai ƙarfi da ƙarfi - wanda hakan ya sa SiC wafer ya zama abin da aka fi so ga tashoshin tushe na 5G na zamani da tsarin radar.

  • Abubuwan lantarki da LED daga SiC Wafer
    LED masu launin shuɗi da UV da aka noma a kan substrates na SiC suna amfana daga kyakkyawan daidaitawar lattice da kuma watsar da zafi. Yin amfani da wafer SiC mai gogewa wanda aka goge yana tabbatar da daidaiton layukan epitaxial, yayin da taurin SiC yana ba da damar rage wafer mai kyau da kuma marufi mai inganci. Wannan ya sa wafer SiC ya zama dandamali mafi dacewa don aikace-aikacen LED mai ƙarfi da ɗorewa.

Tambaya da Amsa na SiC wafer

1. T: Ta yaya ake ƙera wafers ɗin SiC?


A:

An ƙera wafers ɗin SiCMatakai Cikakkun Bayanai

  1. Wafers na SiCShirye-shiryen Kayan Danye

    • Yi amfani da foda SiC mai nauyin ≥5N (ƙazanta ≤1 ppm).
    • A tace sannan a gasa kafin a cire sauran sinadarai na carbon ko nitrogen.

  1. SiCShiri na Crystal na Iri

    • Ɗauki wani yanki na lu'ulu'u guda ɗaya mai siffar 4H-SiC, a yanka shi tare da yanayin 〈0001〉 zuwa ~10 × 10 mm².

    • Gogewa daidai zuwa Ra ≤0.1 nm da kuma yanayin alamar lu'ulu'u.

  2. SiCGirman PVT (Jirgin Ruwa na Jiki)

    • Load graphite crucible: ƙasa da foda na SiC, saman da lu'ulu'u iri.

    • A kwashe zuwa 10⁻³–10⁻⁵ a juye ko a cika da helium mai tsafta a 1 atm.

    • A sanya yankin da aka sanyaya zuwa 2100-2300 ℃, a kiyaye yankin iri mai sanyaya 100-150 ℃.

    • Sarrafa ƙimar girma a 1–5 mm/h don daidaita inganci da yawan aiki.

  3. SiCIngot Annealing

    • A zuba sinadarin SiC a cikin injin a zafin jiki na 1600-1800 ℃ na tsawon awanni 4-8.

    • Manufa: rage damuwa ta zafi da kuma rage yawan nakasa.

  4. SiCYankan Wafer

    • Yi amfani da zare na waya mai lu'u-lu'u don yanke ingot ɗin zuwa wafers mai kauri 0.5-1 mm.

    • Rage girgiza da ƙarfin gefe don guje wa ƙananan fasa.

  5. SiCWafer mai waferNika & Gogewa

    • Nika mai kauridon cire lalacewar yanke (ƙazanta ~ 10–30 µm).

    • Nika mai kyaudon cimma daidaito ≤5 µm.

    • Goge Sinadaran da Inji (CMP)don isa ga kammalawa kamar madubi (Ra ≤0.2 nm).

  6. SiCWafer mai waferTsaftacewa & Dubawa

    • Tsaftacewa ta Ultrasonica cikin maganin Piranha (H₂SO₄: H₂O₂), ruwa DI, sannan IPA.

    • XRD/Raman spectroscopydon tabbatar da nau'in polytype (4H, 6H, 3C).

    • Interferometrydon auna lanƙwasa (<5 µm) da kuma warp (<20 µm).

    • Binciken maki huɗudon gwada juriya (misali HPSI ≥10⁹ Ω·cm).

    • Duba lahania ƙarƙashin na'urar hangen nesa mai haske da aka haɗa da polarized da kuma na'urar gwajin karce.

  7. SiCWafer mai waferRarrabawa da Rarrabawa

    • Rarraba wafers ta hanyar nau'in polytype da nau'in lantarki:

      • Nau'in N-4H-SiC (4H-N): yawan ɗaukar kaya 10¹⁶–10¹⁸ cm⁻³

      • Tsarkakewa Mai Tsabta Mai Tsabta Mai Infusasshe ...

      • Nau'in N-6H-SiC (6H-N)

      • Wasu: 3C-SiC, nau'in P, da sauransu.

  8. SiCWafer mai waferMarufi & Jigilar kaya

    • Sanya a cikin akwatunan wafer masu tsabta, marasa ƙura.

    • Yi wa kowanne akwati lakabi da diamita, kauri, nau'in da aka fi so, matakin juriya, da lambar rukuni.

      Wafers na SiC

2. T: Menene manyan fa'idodin wafers na SiC akan wafers na silicon?


A: Idan aka kwatanta da wafers na silicon, wafers na SiC suna ba da damar:

  • Babban aikin ƙarfin lantarki(>1,200 V) tare da ƙarancin juriya akan wuta.

  • Mafi kyawun kwanciyar hankali a zafin jiki(>300 °C) da kuma ingantaccen tsarin kula da zafi.

  • Saurin sauyawa cikin sauritare da ƙarancin asarar sauyawa, rage sanyaya matakin tsarin da girma a cikin masu sauya wutar lantarki.

4. Tambaya: Waɗanne lahani ne suka shafi yawan amfanin SiC wafer da kuma aiki?


A: Babban lahani a cikin wafers ɗin SiC sun haɗa da ƙananan bututu, ɓarnar basal plane (BPDs), da kuma ɓarnar saman. Ƙananan bututu na iya haifar da gazawar na'ura mai haɗari; BPDs suna ƙara juriya akan lokaci; kuma ɓarnar saman yana haifar da karyewar wafer ko ƙarancin girman epitaxial. Saboda haka, duba mai tsauri da rage lahani suna da mahimmanci don haɓaka yawan SiC wafer.

Lokacin Saƙo: Yuni-30-2025
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