SiC wafer's abtract
Silicon carbide (SiC) wafers sun zama madaidaicin zaɓi don babban iko, mita mai ƙarfi, da zafin jiki na lantarki a cikin keɓaɓɓun motoci, makamashi mai sabuntawa, da sassan sararin samaniya. Bayanin mu na Portfolio ya ƙunshi maɓallin polytypes da doping makirci-nitrogen-doped 4h (3h-n), nitrogen-nitrating 3h (hpsi), nitran-n), da p-/h-n), nitran-n) (ya fadi ko ba a rufe shi ba gwaje-gwajen tsari), da BINCIKE (na al'ada epi yadudduka da bayanan doping don R&D). Wafer diamita 2 ″, 4″, 6″, 8″, da 12″ don dacewa da kayan aikin gado da manyan fabs. Hakanan muna samar da boules na monocrystalline da daidaitattun nau'ikan lu'ulu'u don tallafawa ci gaban kristal na cikin gida.
Wafers ɗin mu na 4H-N yana nuna nau'ikan nau'ikan jigilar kaya daga 1 × 10¹⁶ zuwa 1 × 10¹⁹ cm⁻³ da juriya na 0.01-10 Ω·cm, suna isar da ingantacciyar motsi na lantarki da filayen fashe sama da 2 MV/cm—madaidaicin ga Schottky diodes, da JSFET. Matsalolin HPSI sun wuce 1 × 10¹² Ω·cm juriya tare da ƙarancin micropipe ƙasa da 0.1 cm⁻², yana tabbatar da ƙyalli kaɗan don na'urorin RF da microwave. Cubic 3C-N, samuwa a cikin 2 ″ da 4 ″ tsari, yana ba da damar heteroepitaxy akan silicon kuma yana goyan bayan aikace-aikacen photonic da MEMS. P-type 4H/6H-P wafers, doped tare da aluminum zuwa 1×10¹⁶–5×10¹⁸ cm⁻³, sauƙaƙe kayan gine-ginen na'ura.
PRIME wafers suna shan gogewar sinadarai- injiniyoyi zuwa <0.2 nm RMS roughness surface roughness, jimlar kauri bambancin karkashin 3 µm, da baka <10 µm. Abubuwan DUMMY suna haɓaka haɗuwa da gwaje-gwajen marufi, yayin da wafers BINCIKE ke nuna kauri na epi-Layer na 2-30 µm da bespoke doping. Duk samfuran an tabbatar da su ta hanyar diffraction X-ray (rocking curve <30 arcsec) da Raman spectroscopy, tare da gwaje-gwajen lantarki-Ma'aunin Hall, bayanin C-V, da sikanin micropipe-tabbatar da yarda da JEDEC da SEMI.
Ana yin girma har zuwa diamita mm 150 ta hanyar PVT da CVD tare da ɗimbin rarrabuwa a ƙasa 1 × 10³ cm⁻² da ƙananan ƙidayar micropipe. An yanke lu'ulu'u iri a cikin 0.1° na axis na c-axis don tabbatar da haɓakar haɓakawa da yawan slicing amfanin gona.
Ta hanyar hada pololypes da yawa, bambance-bambancen doping, maki inganci, maki mai kyau, da kuma kayan aiki na kayan aiki, da kuma kayan aikin dandalinmu, da kuma aikace-aikacenmu mai girman gaske.
SiC wafer's abtract
Silicon carbide (SiC) wafers sun zama madaidaicin zaɓi don babban iko, mita mai ƙarfi, da zafin jiki na lantarki a cikin keɓaɓɓun motoci, makamashi mai sabuntawa, da sassan sararin samaniya. Bayanin mu na Portfolio ya ƙunshi maɓallin polytypes da doping makirci-nitrogen-doped 4h (3h-n), nitrogen-nitrating 3h (hpsi), nitran-n), da p-/h-n), nitran-n) (ya fadi ko ba a rufe shi ba gwaje-gwajen tsari), da BINCIKE (na al'ada epi yadudduka da bayanan doping don R&D). Wafer diamita 2 ″, 4″, 6″, 8″, da 12″ don dacewa da kayan aikin gado da manyan fabs. Hakanan muna samar da boules na monocrystalline da daidaitattun nau'ikan lu'ulu'u don tallafawa ci gaban kristal na cikin gida.
Wafers ɗin mu na 4H-N yana nuna nau'ikan nau'ikan jigilar kaya daga 1 × 10¹⁶ zuwa 1 × 10¹⁹ cm⁻³ da juriya na 0.01-10 Ω·cm, suna isar da ingantacciyar motsi na lantarki da filayen fashe sama da 2 MV/cm—madaidaicin ga Schottky diodes, da JSFET. Matsalolin HPSI sun wuce 1 × 10¹² Ω·cm juriya tare da ƙarancin micropipe ƙasa da 0.1 cm⁻², yana tabbatar da ƙyalli kaɗan don na'urorin RF da microwave. Cubic 3C-N, samuwa a cikin 2 ″ da 4 ″ tsari, yana ba da damar heteroepitaxy akan silicon kuma yana goyan bayan aikace-aikacen photonic da MEMS. P-type 4H/6H-P wafers, doped tare da aluminum zuwa 1×10¹⁶–5×10¹⁸ cm⁻³, sauƙaƙe kayan gine-ginen na'ura.
PRIME wafers suna shan gogewar sinadarai- injiniyoyi zuwa <0.2 nm RMS roughness surface roughness, jimlar kauri bambancin karkashin 3 µm, da baka <10 µm. Abubuwan DUMMY suna haɓaka haɗuwa da gwaje-gwajen marufi, yayin da wafers BINCIKE ke nuna kauri na epi-Layer na 2-30 µm da bespoke doping. Duk samfuran an tabbatar da su ta hanyar diffraction X-ray (rocking curve <30 arcsec) da Raman spectroscopy, tare da gwaje-gwajen lantarki-Ma'aunin Hall, bayanin C-V, da sikanin micropipe-tabbatar da yarda da JEDEC da SEMI.
Ana yin girma har zuwa diamita mm 150 ta hanyar PVT da CVD tare da ɗimbin rarrabuwa a ƙasa 1 × 10³ cm⁻² da ƙananan ƙidayar micropipe. An yanke lu'ulu'u iri a cikin 0.1° na axis na c-axis don tabbatar da haɓakar haɓakawa da yawan slicing amfanin gona.
Ta hanyar hada pololypes da yawa, bambance-bambancen doping, maki inganci, maki mai kyau, da kuma kayan aiki na kayan aiki, da kuma kayan aikin dandalinmu, da kuma aikace-aikacenmu mai girman gaske.
Hoton wafer na SiC
6inch 4H-N nau'in SiC wafer's data sheet
| 6 inch SiC wafers data takardar | ||||
| Siga | Sub-Parameter | Babban darajar Z | P daraja | D darajar |
| Diamita | 149.5-150.0 mm | 149.5-150.0 mm | 149.5-150.0 mm | |
| Kauri | 4H-N | 350 µm ± 15 µm | 350 µm ± 25 µm | 350 µm ± 25 µm |
| Kauri | 4H-SI | 500 µm ± 15 µm | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Wafer Orientation | Kashe axis: 4.0° zuwa <11-20> ± 0.5° (4H-N); Kan axis: <0001> ± 0.5° (4H-SI) | Kashe axis: 4.0° zuwa <11-20> ± 0.5° (4H-N); Kan axis: <0001> ± 0.5° (4H-SI) | Kashe axis: 4.0° zuwa <11-20> ± 0.5° (4H-N); Kan axis: <0001> ± 0.5° (4H-SI) | |
| Maƙarƙashiya Maɗaukaki | 4H-N | ≤ 0.2cm⁻² | ≤ 2 cm² | ≤ 15 cm² |
| Maƙarƙashiya Maɗaukaki | 4H-SI | ≤ 1 cm² | ≤5 cm² | ≤ 15 cm² |
| Resistivity | 4H-N | 0.015-0.024 Ω · cm | 0.015-0.028 Ω · cm | 0.015-0.028 Ω · cm |
| Resistivity | 4H-SI | ≥ 1×10¹⁰ Ω·cm | ≥ 1 × 10⁵ Ω·cm | |
| Hannun Filayen Firamare | [10-10] ± 5.0° | [10-10] ± 5.0° | [10-10] ± 5.0° | |
| Tsawon Fitowa na Farko | 4H-N | 47.5 mm ± 2.0 mm | ||
| Tsawon Fitowa na Farko | 4H-SI | Daraja | ||
| Ƙarƙashin Ƙarfi | 3 mm ku | |||
| Warp/LTV/TTV/Baka | ≤2.5µm / ≤6 µm / ≤25 µm / ≤35 µm | ≤5 µm / ≤15 µm / ≤40 µm / ≤60 µm | ||
| Tashin hankali | Yaren mutanen Poland | Ra ≤ 1 nm | ||
| Tashin hankali | CMP | Ra ≤ 0.2 nm | Ra ≤ 0.5 nm | |
| Tsagewar Gefen | Babu | Tsayin tarawa ≤ 20 mm, guda ≤ 2 mm | ||
| Hex Plates | Tarin yanki ≤ 0.05% | Tarin yanki ≤ 0.1% | Tarin yanki ≤ 1% | |
| Yankunan Polytype | Babu | Tarin yanki ≤ 3% | Tarin yanki ≤ 3% | |
| Haɗin Carbon | Tarin yanki ≤ 0.05% | Tarin yanki ≤ 3% | ||
| Scratches Surface | Babu | Tsayin tarawa ≤ 1 × diamita wafer | ||
| Kwakwalwa na Edge | Babu wanda aka halatta ≥ 0.2 mm nisa & zurfin | Har zuwa kwakwalwan kwamfuta 7, ≤ 1 mm kowanne | ||
| TSD (Threading Screw Dislocation) | ≤ 500 cm ² | N/A | ||
| BPD (Base Plane Dilocation) | ≤ 1000 cm⁻² | N/A | ||
| Gurbatar Sama | Babu | |||
| Marufi | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya | |
4inch 4H-N irin SiC wafer's data sheet
| 4inch SiC wafer's data sheet | |||
| Siga | Zero MPD Production | Madaidaicin Matsayin Ƙirƙira (P Grade) | Dummy Grade (D Grade) |
| Diamita | 99.5 mm-100.0 mm | ||
| Kauri (4H-N) | 350 µm± 15 µm | 350 µm± 25 µm | |
| Kauri (4H-Si) | 500 µm± 15 µm | 500 µm± 25 µm | |
| Wafer Orientation | Kashe axis: 4.0 ° zuwa <1120> ± 0.5 ° don 4H-N; Kan axis: <0001> ± 0.5° don 4H-Si | ||
| Maƙarƙashiyar Ƙarfafa (4H-N) | ≤0.2cm⁻² | ≤2 cm² | ≤15 cm² |
| Yawan Bututu (4H-Si) | ≤1 cm² | ≤5 cm² | ≤15 cm² |
| Resistivity (4H-N) | 0.015-0.024 Ω · cm | 0.015-0.028 Ω · cm | |
| Resistivity (4H-Si) | ≥1E10 Ω·cm | ≥1E5 Ω·cm | |
| Hannun Filayen Firamare | [10-10] ± 5.0° | ||
| Tsawon Fitowa na Farko | 32.5 mm ± 2.0 mm | ||
| Tsawon Lantarki na Sakandare | 18.0 mm ± 2.0 mm | ||
| Gabatarwar Flat na Sakandare | Fuskar Silicon: 90° CW daga babban lebur ± 5.0° | ||
| Ƙarƙashin Ƙarfi | 3 mm ku | ||
| LTV/TTV/Bakan Warp | ≤2.5µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Tashin hankali | Yaren mutanen Poland Ra ≤1 nm; CMP Ra ≤0.2 nm | Ra ≤0.5 nm | |
| Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara | Babu | Babu | Tsayin tarawa ≤10 mm; tsayi guda ≤2 mm |
| Hex Plates Ta Babban Haske mai ƙarfi | Tarin yanki ≤0.05% | Tarin yanki ≤0.05% | Tarin yanki ≤0.1% |
| Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi | Babu | Tarin yanki ≤3% | |
| Haɗin Carbon Na gani | Tarin yanki ≤0.05% | Tarin yanki ≤3% | |
| Silicon Surface Scratches By High Intensity Light | Babu | Tsayin tarawa ≤1 diamita wafer | |
| Chips Gefe Ta Babban Haske mai ƙarfi | Babu wanda aka halatta ≥0.2 mm faɗi da zurfin | 5 izini, ≤1 mm kowanne | |
| Lalacewar Silicon Surface Ta Babban Haske mai ƙarfi | Babu | ||
| Rushewar zaren dunƙulewa | ≤500 cm² | N/A | |
| Marufi | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya |
4inch HPSI irin SiC wafer's data sheet
| 4inch HPSI irin SiC wafer's data sheet | |||
| Siga | Zero MPD Production Grade (Z Grade) | Madaidaicin Matsayin Ƙirƙira (P Grade) | Dummy Grade (D Grade) |
| Diamita | 99.5-100.0 mm | ||
| Kauri (4H-Si) | 500 µm ± 20 µm | 500 µm ± 25 µm | |
| Wafer Orientation | Kashe axis: 4.0 ° zuwa <11-20> ± 0.5 ° don 4H-N; Kan axis: <0001> ± 0.5° don 4H-Si | ||
| Yawan Bututu (4H-Si) | ≤1 cm² | ≤5 cm² | ≤15 cm² |
| Resistivity (4H-Si) | ≥1E9 Ω·cm | ≥1E5 Ω·cm | |
| Hannun Filayen Firamare | (10-10) ± 5.0° | ||
| Tsawon Fitowa na Farko | 32.5 mm ± 2.0 mm | ||
| Tsawon Lantarki na Sakandare | 18.0 mm ± 2.0 mm | ||
| Gabatarwar Flat na Sakandare | Fuskar Silicon: 90° CW daga babban lebur ± 5.0° | ||
| Ƙarƙashin Ƙarfi | 3 mm ku | ||
| LTV/TTV/Bakan Warp | ≤3 µm/≤5 µm/≤15 µm/≤30 µm | ≤10 µm/≤15 µm/≤25 µm/≤40 µm | |
| Tashin hankali (C face) | Yaren mutanen Poland | Ra ≤1 nm | |
| Tashin hankali (Si face) | CMP | Ra ≤0.2 nm | Ra ≤0.5 nm |
| Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙashin Ƙarƙwara | Babu | Tsayin tarawa ≤10 mm; tsayi guda ≤2 mm | |
| Hex Plates Ta Babban Haske mai ƙarfi | Tarin yanki ≤0.05% | Tarin yanki ≤0.05% | Tarin yanki ≤0.1% |
| Wuraren Polytype Ta Hanyar Ƙarfin Ƙarfi | Babu | Tarin yanki ≤3% | |
| Haɗin Carbon Na gani | Tarin yanki ≤0.05% | Tarin yanki ≤3% | |
| Silicon Surface Scratches By High Intensity Light | Babu | Tsayin tarawa ≤1 diamita wafer | |
| Chips Gefe Ta Babban Haske mai ƙarfi | Babu wanda aka halatta ≥0.2 mm faɗi da zurfin | 5 izini, ≤1 mm kowanne | |
| Lalacewar Silicon Surface Ta Babban Haske mai ƙarfi | Babu | Babu | |
| Rushewar Zaren Zare | ≤500 cm² | N/A | |
| Marufi | Cassette mai yawa-wafer ko kwandon wafer guda ɗaya | ||
Lokacin aikawa: Juni-30-2025