Silicon carbide (SiC) wani abu ne mai ban mamaki wanda za a iya samu a masana'antar semiconductor da kuma kayayyakin yumbu na zamani. Wannan yakan haifar da rudani tsakanin mutanen da ba su da ƙwarewa waɗanda za su iya ɗaukar su a matsayin nau'in samfuri iri ɗaya. A zahiri, yayin da yake raba sinadarai iri ɗaya, SiC yana bayyana a matsayin yumbu na zamani waɗanda ke jure lalacewa ko kuma semiconductor masu inganci, suna taka rawa daban-daban a aikace-aikacen masana'antu. Akwai manyan bambance-bambance tsakanin kayan SiC na matakin yumbu da na matakin semiconductor dangane da tsarin lu'ulu'u, hanyoyin masana'antu, halayen aiki, da filayen aikace-aikace.
- Bukatun Tsarkakewa Masu Bambanci don Kayan Albarkatun
SiC mai nauyin yumbu yana da ƙa'idodi masu sauƙi na tsarki don amfanin foda. Yawanci, samfuran da aka yi da kayan kasuwanci tare da tsarkin 90%-98% na iya biyan buƙatun aikace-aikace, kodayake yumbu mai aiki mai girma na iya buƙatar tsarkin 98%-99.5% (misali, SiC mai haɗin amsawa yana buƙatar abun ciki na silicon kyauta). Yana jure wa wasu ƙazanta kuma wani lokacin yana haɗa da kayan aikin sintering kamar aluminum oxide (Al₂O₃) ko yttrium oxide (Y₂O₃) da gangan don inganta aikin sintering, rage zafin sintering, da haɓaka yawan samfurin ƙarshe.
SiC mai matakin Semiconductor yana buƙatar matakan tsarki kusan cikakke. SiC mai matakin substrate yana buƙatar tsarkin ≥99.9999% (6N), tare da wasu aikace-aikacen da suka dace suna buƙatar tsarkin 7N (99.99999%). Dole ne yadudduka na epitaxial su kiyaye yawan ƙazanta ƙasa da atoms/cm³ 10¹⁶ (musamman guje wa ƙazanta masu zurfi kamar B, Al, da V). Ko da ƙazanta kamar ƙarfe (Fe), aluminum (Al), ko boron (B) na iya yin mummunan tasiri ga halayen lantarki ta hanyar haifar da wargajewar mai ɗaukar kaya, rage ƙarfin filin lalacewa, da kuma ƙarshe lalata aikin na'ura da amincinsa, wanda ke buƙatar kulawa mai tsauri.
Kayan semiconductor na silicon carbide
- Tsarin Gilashi da Inganci daban-daban
SiC mai nauyin yumbu yana wanzuwa a matsayin foda mai yawan crystalline ko kuma jikin da aka yi wa siminti wanda ya ƙunshi nau'ikan microcrystal SiC da yawa da aka mayar da hankali bazuwar. Kayan na iya ƙunsar nau'ikan polytypes da yawa (misali, α-SiC, β-SiC) ba tare da cikakken iko akan takamaiman nau'ikan polytypes ba, tare da mai da hankali kan yawan abu da daidaito gabaɗaya. Tsarin cikinsa yana da iyakokin hatsi masu yawa da ƙananan ramuka, kuma yana iya ƙunsar kayan aikin sintering (misali, Al₂O₃, Y₂O₃).
SiC mai matakin semiconductor dole ne ya zama wani abu mai siffar lu'ulu'u ɗaya ko kuma wani Layer na epitaxial tare da tsarin lu'ulu'u mai tsari sosai. Yana buƙatar takamaiman nau'ikan lu'ulu'u da aka samu ta hanyar dabarun girma na lu'ulu'u daidai (misali, 4H-SiC, 6H-SiC). Halayen lantarki kamar motsi na lantarki da bandgap suna da matuƙar tasiri ga zaɓin nau'in lu'ulu'u, wanda ke buƙatar kulawa mai ƙarfi. A halin yanzu, 4H-SiC ya mamaye kasuwa saboda kyawawan halayen lantarki da suka haɗa da ƙarfin motsi mai ɗaukar kaya da kuma lalacewar filin, wanda hakan ya sa ya dace da na'urorin wutar lantarki.
- Kwatanta Rikitattun Tsarin Aiki
SiC mai nauyin yumbu yana amfani da hanyoyin ƙera abubuwa masu sauƙi (shirya foda → ƙirƙirar → sintering), kamar "yin tubali." Tsarin ya ƙunshi:
- Haɗa foda na SiC na kasuwanci (yawanci girman micron) da abubuwan ɗaurewa
- Samarwa ta hanyar latsawa
- Yin amfani da sintering mai zafi sosai (1600-2200°C) don cimma yawan danshi ta hanyar yaɗuwar ƙwayoyin cuta
Yawancin aikace-aikacen za a iya gamsuwa da yawan da ya wuce kashi 90%. Duk tsarin ba ya buƙatar ingantaccen tsarin girma na lu'ulu'u, maimakon haka yana mai da hankali kan tsari da daidaiton siminti. Fa'idodi sun haɗa da sassaucin tsari don siffofi masu rikitarwa, kodayake tare da ƙarancin buƙatun tsarki.
SiC mai matakin Semiconductor ya ƙunshi matakai masu rikitarwa (shirin foda mai tsafta → girma mai siffar lu'ulu'u ɗaya → adanawa na epitaxial wafer → ƙera na'urar). Matakan da suka fi muhimmanci sun haɗa da:
- Shirye-shiryen substrate galibi ta hanyar hanyar jigilar tururi ta jiki (PVT)
- Sublimation na foda na SiC a cikin yanayi mai tsanani (2200-2400°C, babban injin tsaftacewa)
- Daidaitaccen iko na yanayin zafi (±1°C) da sigogin matsin lamba
- Girman Layer na Epitaxial ta hanyar adana tururin sinadarai (CVD) don ƙirƙirar yadudduka masu kauri iri ɗaya, masu kauri iri ɗaya (yawanci da yawa zuwa goma na microns)
Duk tsarin yana buƙatar yanayi mai tsafta sosai (misali, ɗakunan tsafta na aji 10) don hana gurɓatawa. Halaye sun haɗa da daidaiton tsari mai tsanani, wanda ke buƙatar iko akan filayen zafi da yawan kwararar iskar gas, tare da ƙa'idodi masu tsauri don tsarkin kayan masarufi (>99.9999%) da ƙwarewar kayan aiki.
- Muhimman Bambance-bambancen Farashi da Jagororin Kasuwa
SiC mai siffar yumbu:
- Kayan aiki: Foda mai daraja ta kasuwanci
- Tsarin aiki mai sauƙi
- Farashi mai rahusa: Dubban zuwa Dubban RMB a kowace tan
- Faɗaɗa aikace-aikace: Abrasives, refractories, da sauran masana'antu masu sauƙin amfani da farashi
SiC mai matakin Semiconductor:
- Dogayen zagayowar girma na substrate
- Ƙalubalen kula da lahani
- Ƙananan ƙimar yawan amfanin ƙasa
- Babban farashi: Dubban daloli na Amurka a kowace inci 6
- Kasuwannin da aka mai da hankali: Kayan lantarki masu inganci kamar na'urorin wutar lantarki da abubuwan RF
Tare da saurin haɓaka sabbin motocin makamashi da sadarwa ta 5G, buƙatar kasuwa tana ƙaruwa sosai.
- Yanayin Aikace-aikace daban-daban
SiC mai nauyin yumbu yana aiki a matsayin "dokin aiki na masana'antu" musamman don aikace-aikacen tsari. Ta hanyar amfani da kyawawan halayen injiniya (babban tauri, juriyar lalacewa) da halayen zafi (juriyar zafin jiki mai yawa, juriyar iskar shaka), ya yi fice a cikin:
- Abubuwan da ke gogewa (tayoyin niƙa, takarda mai yashi)
- Refractories (rufin murhu mai zafi)
- Abubuwan da ke jure wa lalacewa/lalata (jikin famfo, rufin bututu)
Sinadaran tsarin yumbu na silicon carbide
SiC mai matakin Semiconductor yana aiki a matsayin "elite na lantarki," yana amfani da fa'idodin fasahar semiconductor mai faɗi don nuna fa'idodi na musamman a cikin na'urorin lantarki:
- Na'urorin wutar lantarki: Injin canza wutar lantarki na EV, masu canza wutar lantarki (inganta ingancin canza wutar lantarki)
- Na'urorin RF: Tashoshin tushe na 5G, tsarin radar (yana ba da damar yin aiki mafi girma)
- Optoelectronics: Kayan substrate don LEDs masu shuɗi
Wafer ɗin epitaxial na SiC mai milimita 200
| Girma | SiC mai daraja ta yumbu | SiC mai matakin Semiconductor |
| Tsarin Crystal | Polycrystalline, nau'ikan polycrystalline da yawa | Lu'ulu'u ɗaya, nau'ikan da aka zaɓa sosai |
| Mayar da Hankali kan Tsarin Aiki | Sarrafa yawan abu da kuma siffarsa | Ingancin lu'ulu'u da kuma kula da kadarorin lantarki |
| Fifikon Aiki | Ƙarfin injina, juriyar tsatsa, kwanciyar hankali na zafi | Ƙa'idodin lantarki (bandgap, filin fashewa, da sauransu) |
| Yanayin Aikace-aikace | Abubuwan da ke cikin tsarin, sassan da ke jure lalacewa, abubuwan da ke da zafin jiki mai yawa | Na'urori masu ƙarfi, na'urori masu yawan mita, na'urorin lantarki na optoelectronic |
| Direbobin Kuɗi | Sassaucin tsari, farashin kayan aiki | Yawan girma na kristal, daidaiton kayan aiki, tsarkin kayan masarufi |
A taƙaice, babban bambancin ya samo asali ne daga manufofinsu na aiki daban-daban: SiC mai girman yumbu yana amfani da "nau'i (tsari)" yayin da SiC mai girman semiconductor yana amfani da "kayan aiki (na lantarki)." Na farko yana bin aikin injiniya/zafin jiki mai inganci, yayin da na biyun yana wakiltar kololuwar fasahar shirya kayan aiki a matsayin kayan aiki mai ƙarfi, mai girman lu'ulu'u ɗaya. Duk da cewa suna raba asalin sinadarai iri ɗaya, SiC mai girman yumbu da na semiconductor suna nuna bambance-bambance bayyanannu a cikin tsarki, tsarin lu'ulu'u, da hanyoyin masana'antu - duk da haka dukansu suna ba da gudummawa mai mahimmanci ga samar da masana'antu da ci gaban fasaha a fannoni daban-daban.
XKH kamfani ne mai fasaha mai zurfi wanda ya ƙware a fannin bincike da haɓaka kayan silicon carbide (SiC), yana ba da ci gaba na musamman, injinan daidaitacce, da ayyukan gyaran saman da suka kama daga yumbun SiC mai tsarki zuwa lu'ulu'u na SiC mai daraja ta semiconductor. Ta hanyar amfani da fasahar shirye-shirye masu inganci da layukan samarwa masu wayo, XKH yana ba da samfuran SiC masu iya daidaitawa (tsaftacewa 90%-7N) da mafita ga abokan ciniki a fannin semiconductor, sabbin makamashi, sararin samaniya da sauran fannoni na zamani. Kayayyakinmu suna samun aikace-aikace masu yawa a cikin kayan aikin semiconductor, motocin lantarki, sadarwa ta 5G da masana'antu masu alaƙa.
Ga na'urorin yumbu na silicon carbide da XKH ta samar.
Lokacin Saƙo: Yuli-30-2025