Silicon carbide (SiC) wani fili ne na ban mamaki wanda za'a iya samuwa a cikin masana'antar semiconductor da samfuran yumbu na ci gaba. Wannan sau da yawa yana haifar da rudani tsakanin mutane marasa aiki waɗanda zasu iya kuskuren su azaman nau'in samfuri iri ɗaya. A hakikanin gaskiya, yayin da ake raba nau'ikan sinadarai iri ɗaya, SiC yana bayyana azaman ko dai yumbu na ci gaba mai jurewa ko na'ura mai inganci mai inganci, yana taka rawa daban-daban a aikace-aikacen masana'antu. Akwai bambance-bambance masu mahimmanci tsakanin yumbu da kayan SiC na semiconductor dangane da tsarin crystal, tsarin masana'antu, halayen aiki, da filayen aikace-aikace.
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Ceramic-grade SiC yana da ingantacciyar buƙatun tsabta mai sauƙi don kayan abinci na foda. Yawanci, samfuran darajar kasuwanci tare da 90% -98% tsarki na iya saduwa da yawancin buƙatun aikace-aikacen, kodayake babban aikin yumbu na iya buƙatar 98%-99.5% tsarki (misali, SiC mai ɗaure kai yana buƙatar abun ciki na silicon kyauta mai sarrafawa). Yana jure wa wasu ƙazanta kuma wani lokacin da gangan ya haɗa da kayan aikin sintering kamar aluminum oxide (Al₂O₃) ko yttrium oxide (Y₂O₃) don haɓaka aikin ɓarna, ƙananan yanayin zafi, da haɓaka ƙimar samfurin ƙarshe.
Semiconductor-grade SiC yana buƙatar matakan tsabta kusa da cikakke. SiC kristal mai daraja ɗaya yana buƙatar ≥99.9999% (6N), tare da wasu manyan aikace-aikace masu buƙatar 7N (99.99999%) tsarki. Dole ne yadudduka na Epitaxial su kula da ƙarancin ƙazanta a ƙasa da 10¹⁶ atom/cm³ (musamman guje wa ƙazanta masu zurfi kamar B, Al, da V). Ko da gano ƙazanta irin su baƙin ƙarfe (Fe), aluminum (Al), ko boron (B) na iya yin tasiri sosai ga kaddarorin lantarki ta hanyar haifar da warwatse mai ɗaukar kaya, rage ɓarkewar filin, kuma a ƙarshe lalata aikin na'urar da aminci, yana buƙatar tsauraran ƙazanta.
Silicon carbide semiconductor abu
- Daban-daban Tsarin Crystal da inganci
Ceramic-grade SiC da farko yana kasancewa azaman foda na polycrystalline ko gawarwakin da aka haɗa da yawa waɗanda ke daidaita SiC microcrystals bazuwar. Abubuwan na iya ƙunsar polytypes (misali, α-SIC, β-samic) ba tare da tsayayyen iko akan takamaiman kayan pololypes ba, tare da girmamawa maimakon yawan kayan duniya gaba ɗaya. Tsarinsa na ciki yana fasalta iyakoki masu yawa da ƙurar ƙura, kuma yana iya ƙunsar kayan taimako (misali, Al₂O₃, Y₂O₃).
Semiconductor-grade SiC dole ne ya zama madaukai-crystal substrates ko epitaxial yadudduka tare da tsari mai girma na crystal. Yana buƙatar takamaiman nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'ikan nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau‘in nau'in nau'in nau'in nau'in nau'in nau'in nau‘in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau‘in kifi) wanda aka samo shi ta hanyar ingantattun dabarun girma na crystal (misali, 4H-SiC, 6H-SiC). Kayayyakin lantarki kamar motsi na lantarki da bandgap suna da matuƙar kula da zaɓin nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau‘in nau'in nau'in nau'in nau'in nau'in zaɓin zaɓin zaɓi, wanda ke buƙatar kulawa mai ƙarfi. A halin yanzu, 4H-SiC ta mamaye kasuwa saboda manyan kayan lantarki da suka haɗa da babban motsi mai ɗaukar kaya da ƙarfin filin fage, yana mai da shi manufa don na'urorin wuta.
- Kwatancen Tsarin Tsari
Ceramic-grade SiC yana ɗaukar matakai masu sauƙi na masana'anta (shirin foda → ƙirƙirar → sintering), kwatankwacin "yin tubali." Tsarin ya ƙunshi:
- Haɗa foda SiC mai daraja na kasuwanci (yawanci micron-sized) tare da masu ɗaure
- Samar da ta hanyar latsawa
- Sintering high-zazzabi (1600-2200 ° C) don cimma densification ta hanyar barbashi yaduwa.
Yawancin aikace-aikacen za a iya gamsu da> 90% yawa. Gabaɗayan tsari baya buƙatar madaidaicin kulawar ci gaban crystal, mai da hankali maimakon ƙirƙira da daidaita daidaito. Abũbuwan amfãni sun haɗa da sassauƙar tsari don hadaddun siffofi, kodayake tare da ƙananan buƙatun tsabta.
Semiconductor-grade SiC ya ƙunshi matakai masu rikitarwa da yawa (tsarin tsaftataccen foda → girma-crystal substrate girma → jigon wafer epitaxial → ƙirƙira na'urar). Manyan matakai sun haɗa da:
- Shirye-shiryen Substrate da farko ta hanyar jigilar tururi ta jiki (PVT).
- Sublimation na SiC foda a matsanancin yanayi (2200-2400 ° C, babban injin)
- Madaidaicin sarrafa matakan zafin jiki (± 1°C) da sigogin matsa lamba
- Epitaxial Layer girma ta hanyar sinadari tururi jijiya (CVD) don ƙirƙirar kauri iri ɗaya, yadudduka doped (yawanci da yawa zuwa dubun microns)
Gabaɗayan tsarin yana buƙatar mahalli masu tsafta (misali, ɗakunan tsaftar aji 10) don hana gurɓatawa. Halayen sun haɗa da matsananciyar ƙayyadaddun tsari, buƙatar iko akan filayen thermal da ƙimar iskar gas, tare da ƙaƙƙarfan buƙatu don tsabtar ɗanyen abu (> 99.9999%) da ƙwarewar kayan aiki.
- Mahimman Bambance-bambancen Kuɗi da Hanyoyi na Kasuwa
SiC mai darajar yumbura:
- Raw material: Commercial-grade foda
- Sabbin matakai masu sauƙi
- Ƙananan farashi: Dubban zuwa dubunnan RMB kowace ton
- Babban aikace-aikace: Abrasives, refractories, da sauran masana'antu masu tsada
SiC mai darajar Semiconductor:
- Dogon substrate girma hawan keke
- Kula da lahani mai ƙalubale
- Ƙananan yawan amfanin ƙasa
- Babban farashi: Dubban USD a kowane 6-inch substrate
- Kasuwannin da aka mayar da hankali: Na'urorin lantarki masu inganci kamar na'urorin wuta da abubuwan RF
Tare da saurin haɓaka sabbin motocin makamashi da hanyoyin sadarwa na 5G, buƙatar kasuwa tana ƙaruwa sosai.
- Daban-daban Yanayin Aikace-aikacen
SiC-jin yumbu yana aiki a matsayin "doki na masana'antu" da farko don aikace-aikacen tsari. Yin amfani da ingantattun kayan aikin injin sa (babban tauri, juriya) da kaddarorin thermal (juriya mai zafi, juriya na iskar shaka), ya yi fice a:
- Abrasives (niƙa ƙafafun, sandpaper)
- Refractories (rufin kiln mai zafin jiki)
- Abubuwan sawa/lalata (jikin famfo, rufin bututu)
Silicon carbide yumbu tsarin sassa
Semiconductor-grade SiC yana aiki azaman “Elite Electronic,” yana amfani da faffadan kaddarorin sa na bandgap don nuna fa'idodi na musamman a cikin na'urorin lantarki:
- Na'urorin wuta: EV inverters, grid converters (inganta ƙarfin jujjuya wutar lantarki)
- Na'urorin RF: Tashoshin tushe na 5G, tsarin radar (yana ba da damar mitoci masu girma)
- Optoelectronics: Substrate abu don shuɗi LEDs
200-milimita SiC epitaxial wafer
| Girma | Ceramic-grade SiC | Semiconductor-grade SiC |
| Tsarin Crystal | Polycrystalline, iri-iri iri-iri | Lu'ulu'u ɗaya, nau'in nau'in nau'in nau'in nau'in nau'in nau'in nau'i na musamman |
| Mayar da hankali kan tsari | Densification da sarrafa siffar | Crystal ingancin da ikon sarrafa dukiya |
| Fifikon Aiki | Ƙarfin injina, juriya na lalata, kwanciyar hankali na thermal | Kaddarorin lantarki (bandgap, filin rushewa, da sauransu) |
| Yanayin aikace-aikace | Abubuwan da aka gyara, sassa masu jurewa, abubuwan zafi masu zafi | Na'urori masu ƙarfi, na'urori masu ƙarfi, na'urorin optoelectronic |
| Direbobi masu tsada | Tsarin sassauci, farashin albarkatun kasa | Ƙimar girma na Crystal, daidaitattun kayan aiki, tsabtataccen kayan abu |
A taƙaice, ainihin bambance-bambancen ya samo asali ne daga takamaiman dalilai na aikin su: yumbu-grade SiC yana amfani da “siffa (tsari)” yayin da SiC-minti-conductor ke amfani da “kayayyaki (lantarki).” Tsohon yana bin aikin injiniya / thermal mai tsada mai tsada, yayin da na karshen yana wakiltar kololuwar fasahar shirye-shiryen kayan aiki azaman tsafta mai tsabta, kayan aiki guda-crystal. Kodayake raba asalin sinadarai iri ɗaya, yumbu-grade da semiconductor-grade SiC suna nuna bambance-bambance masu tsabta a cikin tsabta, tsarin crystal, da tsarin masana'antu - duk da haka duka biyun suna ba da gudummawa mai mahimmanci ga samarwa masana'antu da ci gaban fasaha a yankunansu.
XKH babban kamfani ne na fasaha wanda ya kware a cikin R&D da kuma samar da kayan silicon carbide (SiC), yana ba da haɓaka haɓakawa na musamman, mashin ɗin daidaitaccen aiki, da sabis na jiyya na sama wanda ya fito daga manyan yumbu na SiC masu tsafta zuwa lu'ulu'u na SiC na semiconductor. Yin amfani da fasahar shirye-shiryen ci gaba da fasahar samar da fasaha, XKH yana ba da damar yin aiki (90% -7N tsarki) da kuma tsarin sarrafawa (polycrystalline / single-crystalline) SiC samfurori da mafita ga abokan ciniki a cikin semiconductor, sabon makamashi, sararin samaniya da sauran filayen yankan. Samfuran mu suna samun aikace-aikace masu yawa a cikin kayan aikin semiconductor, motocin lantarki, sadarwar 5G da masana'antu masu alaƙa.
Wadannan su ne na'urorin yumbura na silicon carbide da XKH ke samarwa.
Lokacin aikawa: Yuli-30-2025