A ranar 26th, Power Cube Semi ya ba da sanarwar nasarar ci gaban Koriya ta Kudu na farkon 2300V SiC (Silicon Carbide) MOSFET semiconductor.
Idan aka kwatanta da data kasance Si (Silicon) tushen semiconductor, SiC (Silicon Carbide) na iya jure wa mafi girman ƙarfin lantarki, saboda haka ana yaba shi azaman na'urar ƙarni na gaba wanda ke jagorantar makomar semiconductor wutar lantarki. Yana aiki a matsayin muhimmin sashi da ake buƙata don gabatar da fasahohin zamani, kamar yaɗuwar motocin lantarki da faɗaɗa cibiyoyin bayanai waɗanda ke tafiyar da hankali ta wucin gadi.
Power Cube Semi kamfani ne maras kyau wanda ke haɓaka na'urori masu sarrafa wutar lantarki a cikin manyan nau'ikan uku: SiC (Silicon Carbide), Si (Silicon), da Ga2O3 (Gallium Oxide). Kwanan nan, kamfanin ya yi amfani da sayar da babban kamfani na Schottky Barrier Diodes (SBDs) ga wani kamfanin kera motocin lantarki na duniya a kasar Sin, inda ya samu karbuwa ga zane da fasaha na semiconductor.
Sakin 2300V SiC MOSFET abin lura ne a matsayin farkon irin wannan shari'ar ci gaba a Koriya ta Kudu. Infineon, wani kamfanin samar da wutar lantarki na duniya da ke Jamus, shi ma ya sanar da ƙaddamar da samfurinsa na 2000V a cikin Maris, amma ba tare da jeri samfurin 2300V ba.
Infineon's 2000V CoolSiC MOSFET, yana amfani da kunshin TO-247PLUS-4-HCC, yana biyan buƙatun ƙara yawan ƙarfin wuta tsakanin masu zanen kaya, yana tabbatar da amincin tsarin ko da ƙarƙashin matsanancin ƙarfin ƙarfin lantarki da yanayin sauyawa.
CoolSiC MOSFET yana ba da ƙarfin haɗin kai kai tsaye na yanzu, yana ba da damar haɓaka ƙarfi ba tare da haɓaka halin yanzu ba. Ita ce na'urar siliki carbide ta farko mai hankali akan kasuwa tare da ƙarancin wutar lantarki na 2000V, tana amfani da kunshin TO-247PLUS-4-HCC tare da nisan rarrafe na 14mm da izinin 5.4mm. Waɗannan na'urori suna da ƙarancin asarar sauyawa kuma sun dace da aikace-aikace kamar masu juyawa igiyoyin hasken rana, tsarin ajiyar makamashi, da cajin abin hawa na lantarki.
Jerin samfuran CoolSiC MOSFET 2000V ya dace da tsarin bas ɗin DC mai ƙarfi mai ƙarfi har zuwa 1500V DC. Idan aka kwatanta da 1700V SiC MOSFET, wannan na'urar tana ba da isasshiyar juzu'i mai ƙarfi don tsarin 1500V DC. CoolSiC MOSFET yana ba da ƙarfin wutar lantarki na 4.5V kuma ya zo sanye da ingantattun diodes na jiki don ƙaƙƙarfan motsi. Tare da fasahar haɗin .XT, waɗannan abubuwan haɗin suna ba da kyakkyawan aikin zafi da juriya mai ƙarfi.
Baya ga 2000V CoolSiC MOSFET, nan ba da jimawa ba Infineon zai ƙaddamar da ƙarin diodes na CoolSiC wanda aka haɗa cikin TO-247PLUS 4-pin da TO-247-2 a cikin kwata na uku na 2024 da kwata na ƙarshe na 2024, bi da bi. Waɗannan diodes sun dace musamman don aikace-aikacen hasken rana. Hakanan akwai haɗe-haɗen samfuran direban kofa masu dacewa.
Jerin samfuran CoolSiC MOSFET 2000V yanzu yana kan kasuwa. Bugu da ƙari, Infineon yana ba da allunan kimantawa masu dacewa: EVAL-COOLSIC-2KVHCC. Masu haɓakawa za su iya amfani da wannan jirgi a matsayin madaidaicin dandamalin gwaji na gabaɗaya don kimanta duk CoolSiC MOSFETs da diodes waɗanda aka ƙididdige su a 2000V, da kuma EiceDRIVER ƙaramin tashar keɓewar ƙofar tashar 1ED31xx jerin samfura ta hanyar dual-pulse ko ci gaba da aikin PWM.
Gung Shin-soo, Babban Jami'in Fasaha na Power Cube Semi, ya ce, "Mun sami damar fadada kwarewar da muke da ita a cikin ci gaba da yawan samar da 1700V SiC MOSFETs zuwa 2300V.
Lokacin aikawa: Afrilu-08-2024