A ranar 26 ga wata, Power Cube Semi ta sanar da nasarar ci gaba da aikin farko na semiconductor MOSFET na 2300V SiC (Silicon Carbide) na Koriya ta Kudu.
Idan aka kwatanta da na'urorin semiconductors da ke tushen Si (Silicon), SiC (Silicon Carbide) na iya jure wa ƙarfin lantarki mai yawa, don haka ana yaba shi a matsayin na'urar tsara ta gaba da za ta jagoranci makomar na'urorin semiconductors masu amfani da wutar lantarki. Yana aiki a matsayin muhimmin sashi da ake buƙata don gabatar da fasahohin zamani, kamar yaduwar motocin lantarki da faɗaɗa cibiyoyin bayanai waɗanda basirar wucin gadi ke jagoranta.
Kamfanin Power Cube Semi wani kamfani ne mai ban mamaki wanda ke haɓaka na'urorin semiconductor masu amfani da wutar lantarki a manyan rukuni uku: SiC (Silicon Carbide), Si (Silicon), da Ga2O3 (Gallium Oxide). Kwanan nan, kamfanin ya yi amfani da kuma sayar da Schottky Barrier Diodes (SBDs) mai ƙarfin gaske ga wani kamfanin kera motocin lantarki na duniya a China, wanda hakan ya sami karɓuwa saboda ƙirar semiconductor da fasaharsa.
Fitowar 2300V SiC MOSFET abin lura ne a matsayin wani lamari na farko da ya shafi ci gaba a Koriya ta Kudu. Kamfanin Infineon, wani kamfanin samar da wutar lantarki na duniya da ke Jamus, shi ma ya sanar da ƙaddamar da samfurin 2000V a watan Maris, amma ba tare da jerin samfuran 2300V ba.
Injin Infineon mai ƙarfin 2000V CoolSiC MOSFET, wanda ke amfani da fakitin TO-247PLUS-4-HCC, ya biya buƙatun ƙaruwar yawan wutar lantarki tsakanin masu ƙira, yana tabbatar da ingancin tsarin koda a ƙarƙashin yanayi mai tsauri na ƙarfin lantarki mai ƙarfi da kuma yanayin sauyawar mita.
CoolSiC MOSFET yana ba da ƙarfin wutar lantarki mai ƙarfi, wanda ke ba da damar ƙara ƙarfin lantarki ba tare da ƙara ƙarfin lantarki ba. Ita ce na'urar farko ta silicon carbide mai rarrabuwa a kasuwa tare da ƙarfin lantarki mai lalacewa na 2000V, tana amfani da fakitin TO-247PLUS-4-HCC tare da nisan creepage na 14mm da kuma clearance na 5.4mm. Waɗannan na'urori suna da ƙarancin asarar sauyawa kuma sun dace da aikace-aikace kamar inverters na igiyar rana, tsarin adana makamashi, da cajin ababen hawa na lantarki.
Jerin samfuran CoolSiC MOSFET 2000V ya dace da tsarin bas na DC mai ƙarfin lantarki har zuwa 1500V DC. Idan aka kwatanta da 1700V SiC MOSFET, wannan na'urar tana ba da isasshen iyaka na overvoltage don tsarin DC 1500V. CoolSiC MOSFET yana ba da ƙarfin lantarki na 4.5V kuma yana zuwa da kayan aiki masu ƙarfi na jiki don sauyawa mai tauri. Tare da fasahar haɗin .XT, waɗannan abubuwan suna ba da kyakkyawan aikin zafi da juriya mai ƙarfi ga danshi.
Baya ga 2000V CoolSiC MOSFET, Infineon zai ƙaddamar da ƙarin diodes na CoolSiC waɗanda aka sanya a cikin fakitin TO-247PLUS 4-pin da TO-247-2 a kwata na uku na 2024 da kuma kwata na ƙarshe na 2024, bi da bi. Waɗannan diodes sun dace musamman don amfani da hasken rana. Hakanan ana samun haɗin samfuran direbobin ƙofa masu dacewa.
Jerin samfuran CoolSiC MOSFET 2000V yanzu yana samuwa a kasuwa. Bugu da ƙari, Infineon yana ba da allunan kimantawa masu dacewa: EVAL-COOLSIC-2KVHCC. Masu haɓakawa za su iya amfani da wannan allunan a matsayin dandamali na gwaji na gabaɗaya don kimanta duk CoolSiC MOSFETs da diodes waɗanda aka kimanta a 2000V, da kuma jerin samfuran EiceDRIVER compact single-channel isolation gate driver 1ED31xx ta hanyar dual-pulse ko ci gaba da aikin PWM.
Gung Shin-soo, Babban Jami'in Fasaha na Power Cube Semi, ya ce, "Mun sami damar fadada kwarewarmu a fannin ci gaba da samar da wutar lantarki mai karfin 1700V SiC MOSFETs zuwa 2300V."
Lokacin Saƙo: Afrilu-08-2024