Tsaftace Rigar Ruwa (Rigar Ruwa) yana ɗaya daga cikin mahimman matakai a cikin tsarin kera semiconductor, wanda aka yi niyya don cire gurɓatattun abubuwa daban-daban daga saman wafer don tabbatar da cewa ana iya aiwatar da matakan aiwatarwa na gaba akan farfajiya mai tsabta.
Yayin da girman na'urorin semiconductor ke ci gaba da raguwa kuma buƙatun daidaito suna ƙaruwa, buƙatun fasaha na hanyoyin tsaftace wafer sun ƙara yin tsauri. Ko da ƙananan barbashi, kayan halitta, ions na ƙarfe, ko ragowar oxide akan saman wafer na iya yin tasiri sosai ga aikin na'urar, ta haka yana shafar yawan amfanin da ingancin na'urorin semiconductor.
Ka'idojin Tsaftace Wafer
Tushen tsaftace wafer yana cikin cire gurɓatattun abubuwa daban-daban daga saman wafer ta hanyar amfani da sinadarai, sinadarai, da sauran hanyoyi don tabbatar da cewa wafer ɗin yana da tsabtataccen wuri da ya dace da sarrafawa na gaba.
Nau'in Gurɓatawa
Babban Tasiri Kan Halayen Na'ura
| Gurɓatar abubuwa | Lalacewar tsari
Lalacewar dasa ion a jiki
Lalacewar lalacewar fim ɗin rufewa
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| Gurɓatar ƙarfe | Karafan Alkali | Rashin daidaiton transistor na MOS
Rushewar/lalacewar fim ɗin ƙofa mai ɗauke da sinadarin oxide
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| Karfe Masu Nauyi | Ƙara yawan fitar da wutar lantarki ta hanyar haɗin PN
Lalacewar lalacewar fim ɗin ƙofa mai ɗauke da sinadarin oxide
Lalacewar masu ɗaukar marasa lafiya na tsawon rai
Samar da lahani na Layer na motsa oxide
| |
| Gurɓatar Sinadarai | Kayan Halitta | Lalacewar lalacewar fim ɗin ƙofa mai ɗauke da sinadarin oxide
Bambance-bambancen fim ɗin CVD (lokutan shiryawa)
Bambance-bambancen kauri na fim ɗin thermal oxide (ƙara yawan iskar shaka)
Hazo (wafer, ruwan tabarau, madubi, abin rufe fuska, reticle)
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| Magungunan da ba su da sinadarai (B, P) | Canjin transistor na MOS Vth
Bambancin juriyar takardar poly-silicon da kuma babban juriyar substrate na Si
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| Tushen Inorganic (amines, ammonia) da acid (SOx) | Lalacewar ƙudurin juriyar da aka ƙara wa sinadarai
Faruwar gurɓataccen ƙwayoyin cuta da hazo sakamakon samar da gishiri
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| Fina-finan Oxide na asali da na sinadarai saboda danshi, iska | Ƙara juriyar hulɗa
Rushewar/lalacewar fim ɗin ƙofa mai ɗauke da sinadarin oxide
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Musamman, manufofin tsarin tsaftace wafer sun haɗa da:
Cire Barbashi: Amfani da hanyoyin zahiri ko na sinadarai don cire ƙananan barbashi da aka haɗa a saman wafer. Ƙananan barbashi suna da wahalar cirewa saboda ƙarfin lantarki mai ƙarfi tsakanin su da saman wafer, wanda ke buƙatar kulawa ta musamman.
Cire Kayan Halitta: Gurɓatattun abubuwa kamar man shafawa da ragowar masu hana haske na iya mannewa a saman wafer. Yawanci ana cire waɗannan gurɓatattun abubuwa ta amfani da sinadarai masu ƙarfi ko abubuwan narkewa.
Cire ion na ƙarfe: Ragowar ion na ƙarfe a saman wafer na iya lalata aikin lantarki har ma da shafar matakan sarrafawa na gaba. Saboda haka, ana amfani da takamaiman maganin sinadarai don cire waɗannan ion ɗin.
Cire Oxide: Wasu hanyoyin suna buƙatar saman wafer ya kasance ba tare da yadudduka na oxide ba, kamar silicon oxide. A irin waɗannan yanayi, ana buƙatar cire yadudduka na oxide na halitta yayin wasu matakan tsaftacewa.
Kalubalen fasahar tsaftace wafer yana cikin kawar da gurɓatattun abubuwa yadda ya kamata ba tare da yin illa ga saman wafer ba, kamar hana tsatsa, tsatsa, ko wasu lalacewar jiki.
2. Tsarin Tsaftace Wafer
Tsarin tsaftace wafer yawanci ya ƙunshi matakai da yawa don tabbatar da kawar da gurɓatattun abubuwa gaba ɗaya da kuma cimma cikakken tsabtataccen wuri.
Hoto: Kwatanta Tsakanin Tsaftace Nau'in Rukuni da Tsaftace Wafer Guda Ɗaya
Tsarin tsaftace wafer na yau da kullun ya haɗa da manyan matakai masu zuwa:
1. Tsaftacewa Kafin A Yi (Tsabtacewa Kafin A Yi)
Manufar tsaftacewa kafin lokaci ita ce cire gurɓatattun abubuwa da manyan barbashi daga saman wafer, wanda yawanci ake samu ta hanyar wankewar ruwa mai narkewa (DI Water) da kuma tsaftace ultrasonic. Ruwan da aka cire daga ion zai iya cire barbashi da datti da aka narkar daga saman wafer, yayin da tsaftacewar ultrasonic ke amfani da tasirin cavitation don karya alaƙar da ke tsakanin barbashi da saman wafer, wanda hakan ke sa su sauƙin cirewa.
2. Tsaftace Sinadarai
Tsaftace sinadarai yana ɗaya daga cikin manyan matakai a cikin tsarin tsaftace wafer, ta amfani da maganin sinadarai don cire kayan halitta, ions na ƙarfe, da oxides daga saman wafer.
Cire Kayan Halitta: Yawanci, ana amfani da acetone ko cakuda ammonia/peroxide (SC-1) don narke da kuma lalata gurɓatattun abubuwa na halitta. Matsakaicin rabo na maganin SC-1 shine NH₄OH
₂O₂
₂O = 1:1:5, tare da zafin aiki na kusan 20°C.
Cire ion na ƙarfe: Ana amfani da cakuda nitric acid ko hydrochloric acid/peroxide (SC-2) don cire ion na ƙarfe daga saman wafer. Matsakaicin rabo na maganin SC-2 shine HCl.
₂O₂
₂O = 1:1:6, tare da kiyaye zafin jiki a kusan 80°C.
Cire Oxide: A wasu hanyoyin, ana buƙatar cire layin oxide na asali daga saman wafer, wanda ake amfani da maganin hydrofluoric acid (HF). Matsakaicin rabo na maganin HF shine HF
₂O = 1:50, kuma ana iya amfani da shi a zafin ɗaki.
3. Tsaftace Ƙarshe
Bayan tsaftace sinadarai, wafers yawanci suna ɗaukar matakin tsaftacewa na ƙarshe don tabbatar da cewa babu wani ragowar sinadarai da ya rage a saman. Tsaftacewa na ƙarshe galibi yana amfani da ruwan da aka cire daga ion don wankewa sosai. Bugu da ƙari, ana amfani da tsaftace ruwan ozone (O₃/H₂O) don ƙara cire duk wani gurɓataccen abu da ya rage daga saman wafer.
4. Busarwa
Dole ne a busar da wafers ɗin da aka tsaftace da sauri don hana alamun ruwa ko sake haɗawa da gurɓatattun abubuwa. Hanyoyin busarwa da aka saba amfani da su sun haɗa da busar da juyawa da kuma tsarkake nitrogen. Na farko yana cire danshi daga saman wafer ta hanyar juyawa da sauri, yayin da na biyun yana tabbatar da bushewa gaba ɗaya ta hanyar hura busasshen iskar nitrogen a saman wafer.
Gurɓataccen abu
Sunan Tsarin Tsaftacewa
Bayanin Cakuda Sinadarai
Sinadarai
| Barbashi | Piranha (SPM) | Sinadarin Sulfuric/hydrogen peroxide/ruwan DI | H2SO4/H2O2/H2O3-4:1; 90°C |
| SC-1 (APM) | Ammonium hydroxide/hydrogen peroxide/ruwa DI | NH4OH/H2O2/H2O 1:4:20; 80°C | |
| Karfe (ba jan ƙarfe ba) | SC-2 (HPM) | Ruwan Hydrochloric acid/hydrogen peroxide/DI | HCl/H2O2/H2O1:1:6; 85°C |
| Piranha (SPM) | Sinadarin Sulfuric/hydrogen peroxide/ruwan DI | H2SO4/H2O2/H2O3-4:1; 90°C | |
| DHF | A narkar da ruwan hydrofluoric acid/DI (ba zai cire jan ƙarfe ba) | HF/H2O1:50 | |
| Organics | Piranha (SPM) | Sinadarin Sulfuric/hydrogen peroxide/ruwan DI | H2SO4/H2O2/H2O3-4:1; 90°C |
| SC-1 (APM) | Ammonium hydroxide/hydrogen peroxide/ruwa DI | NH4OH/H2O2/H2O 1:4:20; 80°C | |
| DIO3 | Ozone a cikin ruwan da aka cire ion | Haɗaɗɗun O3/H2O da aka Inganta | |
| Oxide na asali | DHF | A narkar da sinadarin hydrofluoric acid/ruwan DI | HF/H2O 1:100 |
| BHF | Ruwan hydrofluoric acid | NH4F/HF/H2O |
3. Hanyoyin Tsaftace Wafer Na Yau Da Kullum
1. Hanyar Tsaftace RCA
Hanyar tsaftacewa ta RCA tana ɗaya daga cikin dabarun tsaftacewar wafer mafi shahara a masana'antar semiconductor, wacce Kamfanin RCA ya ƙirƙiro sama da shekaru 40 da suka gabata. Ana amfani da wannan hanyar musamman don cire gurɓatattun abubuwa na halitta da ƙazanta na ƙarfe kuma ana iya kammala ta matakai biyu: SC-1 (Standard Clean 1) da SC-2 (Standard Clean 2).
Tsaftacewa ta SC-1: Ana amfani da wannan matakin ne musamman don cire gurɓatattun abubuwa da ƙwayoyin halitta. Maganin shine cakuda ammonia, hydrogen peroxide, da ruwa, wanda ke samar da siraran silicon oxide a saman wafer.
Tsaftacewa ta SC-2: Ana amfani da wannan matakin ne musamman don cire gurɓatattun ion na ƙarfe, ta amfani da cakuda hydrochloric acid, hydrogen peroxide, da ruwa. Yana barin wani siririn Layer na passivation a saman wafer don hana gurɓatawa.
2. Hanyar Tsaftace Piranha (Tsabtace Etch na Piranha)
Hanyar tsaftacewa ta Piranha wata hanya ce mai matuƙar tasiri wajen cire kayan halitta, ta amfani da cakuda sulfuric acid da hydrogen peroxide, yawanci a cikin rabo na 3:1 ko 4:1. Saboda ƙarfin sinadarin oxidative na wannan maganin, yana iya cire adadi mai yawa na abubuwan halitta da gurɓatattun abubuwa masu tauri. Wannan hanyar tana buƙatar kulawa sosai ga yanayi, musamman dangane da zafin jiki da yawansu, don guje wa lalata wafer ɗin.
Tsaftacewar ultrasonic yana amfani da tasirin cavitation da raƙuman sauti masu yawa ke samarwa a cikin ruwa don cire gurɓatawa daga saman wafer. Idan aka kwatanta da tsaftacewar ultrasonic ta gargajiya, tsaftacewar megasonic tana aiki a mafi yawan mita, wanda ke ba da damar cire ƙananan ƙwayoyin da ke da girman micron cikin inganci ba tare da haifar da lahani ga saman wafer ba.
4. Tsaftace Ozone
Fasahar tsaftace iskar ozone tana amfani da ƙarfin sinadari mai hana iskar ozone ruɓewa da kuma cire gurɓatattun abubuwa daga saman wafer, a ƙarshe tana mayar da su zuwa carbon dioxide da ruwa marasa lahani. Wannan hanyar ba ta buƙatar amfani da sinadarai masu tsada kuma tana haifar da ƙarancin gurɓataccen muhalli, wanda hakan ya sa ta zama fasaha mai tasowa a fannin tsaftace iskar ozone.
4. Kayan Aikin Tsaftace Wafer
Domin tabbatar da inganci da amincin hanyoyin tsaftace wafer, ana amfani da nau'ikan kayan aikin tsaftacewa na zamani a masana'antar semiconductor. Manyan nau'ikan sun haɗa da:
1. Kayan Aikin Tsaftace Jiki
Kayan aikin tsaftacewa da ruwa sun haɗa da tankunan nutsewa daban-daban, tankunan tsaftacewa na ultrasonic, da na'urorin busar da na'urorin juyawa. Waɗannan na'urori suna haɗa ƙarfin injina da na'urorin sinadarai don cire gurɓatattun abubuwa daga saman wafer. Tankunan nutsewa galibi suna da tsarin sarrafa zafin jiki don tabbatar da daidaito da ingancin maganin sinadarai.
2. Kayan Aikin Tsaftace Busasshe
Kayan aikin tsaftacewar busasshe sun haɗa da masu tsaftace plasma, waɗanda ke amfani da ƙwayoyin cuta masu ƙarfi a cikin plasma don amsawa da kuma cire ragowar daga saman wafer. Tsaftace plasma ya dace musamman don hanyoyin da ke buƙatar kiyaye ingancin saman ba tare da shigar da ragowar sinadarai ba.
3. Tsarin Tsaftacewa Mai Aiki da Kai
Tare da ci gaba da faɗaɗa samar da semiconductor, tsarin tsaftacewa ta atomatik ya zama zaɓi mafi kyau don tsaftace manyan wafer. Waɗannan tsarin galibi sun haɗa da hanyoyin canja wuri ta atomatik, tsarin tsaftacewa na tankuna da yawa, da tsarin sarrafa daidaito don tabbatar da daidaiton sakamakon tsaftacewa ga kowane wafer.
5. Yanayin da ke Faruwa a Nan Gaba
Yayin da na'urorin semiconductor ke ci gaba da raguwa, fasahar tsaftace wafer tana ci gaba da bunƙasa zuwa ga mafi inganci da kuma hanyoyin magance muhalli. Fasahar tsaftacewa ta gaba za ta mayar da hankali kan:
Cire ƙananan ƙwayoyin nanometer: Fasahar tsaftacewa da ke akwai na iya sarrafa ƙananan ƙwayoyin nanometer, amma tare da ƙarin raguwar girman na'urar, cire ƙananan ƙwayoyin nanometer zai zama sabon ƙalubale.
Tsaftace Kore da Mai Kyau ga Muhalli: Rage amfani da sinadarai masu cutarwa ga muhalli da kuma haɓaka hanyoyin tsaftacewa masu kyau ga muhalli, kamar tsaftace ozone da tsaftacewa mai girma, zai ƙara zama da muhimmanci.
Manyan Matakan Aiki da Kai da Hankali: Tsarin hankali zai ba da damar sa ido da daidaita sigogi daban-daban a ainihin lokaci yayin aikin tsaftacewa, wanda hakan zai ƙara inganta ingancin tsaftacewa da ingancin samarwa.
Fasahar tsaftace wafer, a matsayin muhimmin mataki a cikin kera semiconductor, tana taka muhimmiyar rawa wajen tabbatar da tsaftar saman wafer don ayyuka masu zuwa. Haɗakar hanyoyin tsaftacewa daban-daban tana kawar da gurɓatattun abubuwa yadda ya kamata, tana samar da tsaftataccen saman substrate don matakai na gaba. Yayin da fasaha ke ci gaba, za a ci gaba da inganta hanyoyin tsaftacewa don biyan buƙatun daidaito mafi girma da ƙarancin lahani a cikin kera semiconductor.
Lokacin Saƙo: Oktoba-08-2024