Hasashen da Kalubale ga Kayan Semiconductor na ƙarni na Biyar

Semiconductors suna aiki a matsayin ginshiƙin zamanin bayanai, tare da kowane maimaita abu yana sake bayyana iyakokin fasahar ɗan adam. Tun daga semiconductors na ƙarni na farko da aka yi da silicon zuwa kayan zamani na ƙarni na huɗu masu faɗi da faɗi, kowace tsalle-tsalle ta juyin halitta ta haifar da ci gaba mai sauye-sauye a fannin sadarwa, makamashi, da kwamfuta. Ta hanyar nazarin halaye da dabarun sauyawar tsararraki na kayan semiconductor da ake da su, za mu iya hasashen hanyoyin da za a bi don semiconductors na ƙarni na biyar yayin da muke bincika hanyoyin dabarun China a wannan fagen gasa.

 

I. Halaye da Dabaru na Juyin Halitta na Tsararrun Semiconductor Huɗu

 

Masu amfani da Semiconductor na ƙarni na farko: Zamanin Gidauniyar Silicon-Germanium


Halaye: Na'urorin semiconductors kamar silicon (Si) da germanium (Ge) suna ba da ingantaccen farashi da kuma tsarin ƙera kayayyaki, duk da haka suna fama da ƙananan gibin da ke tsakanin su (Si: 1.12 eV; Ge: 0.67 eV), suna iyakance juriyar ƙarfin lantarki da kuma aiki mai yawa.
Aikace-aikace: Da'irori masu haɗaka, ƙwayoyin hasken rana, na'urori masu ƙarancin ƙarfin lantarki/ƙananan mitoci.
Direban Sauyi: Bukatar da ake da ita ta ƙaruwa wajen aiki mai yawan mita/zafi mai yawa a cikin optoelectronics ta zarce ƙarfin silicon.

Si wafer & Ge na gani windows_副本

Masu amfani da Semiconductor na ƙarni na biyu: Juyin Juya Halin Hadakar III-V


Halaye: Mahaɗan III-V kamar gallium arsenide (GaAs) da indium phosphide (InP) suna da faɗin bandgaps (GaAs: 1.42 eV) da kuma ƙarfin lantarki mai yawa don aikace-aikacen RF da photonic.
Aikace-aikace: Na'urorin RF na 5G, diodes na laser, sadarwa ta tauraron dan adam.
Kalubale: Karancin kayan aiki (yawan sinadarin indium: 0.001%), sinadarai masu guba (arsenic), da kuma tsadar samar da kayayyaki.
Direban Canji: Ana buƙatar kayan da ke da ƙarfin lantarki mai ƙarfi sosai ta amfani da makamashi/iko.

GaAs wafer & InP wafer_副本

 

Masu amfani da Semiconductor na ƙarni na uku: Juyin Juya Halin Makamashi Mai Faɗi

 


Halaye: Silicon carbide (SiC) da gallium nitride (GaN) suna ba da ramuka masu yawa >3eV (SiC:3.2eV; GaN:3.4eV), tare da ingantaccen watsawar zafi da halaye masu yawa.
Aikace-aikace: Injinan wutar lantarki na EV, injinan wutar lantarki na PV, kayayyakin more rayuwa na 5G.
Fa'idodi: Tanadin makamashi sama da 50% da kuma rage girman 70% idan aka kwatanta da silicon.
Direban Canji: Kwamfutar AI/kwantum tana buƙatar kayan aiki masu ma'aunin aiki mai matuƙar wahala.

SiC wafer & GaN wafer_副本

Masu amfani da Semiconductor na ƙarni na huɗu: Frontier mai faɗi da faɗi


Halaye: Gallium oxide (Ga₂O₃) da lu'u-lu'u (C) suna samun ramuka har zuwa 4.8eV, suna haɗa juriya mai ƙarancin ƙarfi da juriyar ƙarfin kV.
Aikace-aikace: ICs masu ƙarfin lantarki mai yawa, na'urorin gano zurfin UV, sadarwa ta kwantum.
Nasarorin da aka samu: Na'urorin Ga₂O₃ suna jure wa >8kV, suna ninka ingancin SiC sau uku.
Manhajar Juyin Halitta: Ana buƙatar tsauraran matakan aiki na sikelin kwata don shawo kan iyakokin jiki.

Ga₂O₃ wafer & GaN On Diamond_副本

I. Yanayin Semiconductor na ƙarni na biyar: Kayan Kwatancen Kwatancen & Tsarin Gine-gine na 2D

 

Abubuwan da za su iya haifar da ci gaba sun haɗa da:

 

1. Masu Rufe Fuskoki: Gudar da saman ruwa tare da rufin da aka yi da yawa yana ba da damar na'urorin lantarki marasa asara.

 

2. Kayan Aiki na 2D: Graphene/MoS₂ suna ba da amsawar mitar THz da kuma dacewa da na'urorin lantarki masu sassauƙa.

 

3. Ƙwayoyin Quantum da Ƙwayoyin Photonic: Injiniyan Bandgap yana ba da damar haɗakar optoelectronic da thermal.

 

4. Bio-Semiconductors: Kayan da aka haɗa da DNA/protein suna haɗa ilmin halitta da na'urorin lantarki.

 

5. Manyan Abubuwan da ke Haɗawa: AI, hanyoyin sadarwa na kwakwalwa da kwamfuta, da kuma buƙatun superconductivity na zafin ɗaki.

 

II. Damar Semiconductor na China: Daga Mabiyi zuwa Shugaba

 

1. Nasarorin Fasaha
• Nau'i na 3: Samar da kayan SiC masu inci 8 cikin yawa; SiC MOSFETs masu inci 8 a cikin motocin BYD
• Nau'i na 4: Nasarar inci 8 Ga₂O₃ mai ban mamaki ta XUPT da CETC46

 

2. Tallafin Manufofi
• Tsarin Shekaru Biyar na 14 ya ba da fifiko ga na'urorin semiconductor na ƙarni na 3
• An kafa asusun masana'antu na lardin Yuan biliyan ɗari

 

• Na'urorin GaN masu inci 6-8 da na'urorin transistors na Ga₂O₃ sun shiga cikin manyan ci gaban fasaha guda 10 a shekarar 2024.

 

III. Kalubale da Mafita Masu Mahimmanci

 

1. Matsalar Fasaha
• Girman lu'ulu'u: Ƙarancin yawan amfanin ƙasa ga manyan boules (misali, fashewar Ga₂O₃)
• Ka'idojin Aminci: Rashin ka'idoji da aka kafa don gwaje-gwajen tsufa masu ƙarfi/yawan mita

 

2. Gibin Sarkar Samarwa
• Kayan aiki: ƙasa da kashi 20% na abubuwan da ake samarwa a cikin gida ga masu noman lu'ulu'u na SiC
• Karɓa: Fifikon ƙasa ga abubuwan da aka shigo da su daga ƙasashen waje

 

3. Hanyoyi Masu Dabaru

• Haɗin gwiwar Masana'antu da Jami'o'i: An yi koyi da "Ƙungiyar Semiconductor ta ƙarni na Uku"

 

• Mayar da Hankali Kan Al'amura: Ba da fifiko ga hanyoyin sadarwa na kwantum/sabbin kasuwannin makamashi

 

• Ci gaban Hazaka: Kafa shirye-shiryen ilimi na "Kimiyya da Injiniyanci na Chip"

 

Daga silicon zuwa Ga₂O₃, juyin halittar semiconductor ya ba da labarin nasarar ɗan adam akan iyakokin zahiri. Damar China tana cikin ƙwarewar kayan ƙarni na huɗu yayin da take jagorantar sabbin abubuwa na ƙarni na biyar. Kamar yadda masanin ilimi Yang Deren ya lura: "Hakika kirkire-kirkire yana buƙatar ƙirƙirar hanyoyi marasa tafiya." Haɗin kai tsakanin manufofi, jari, da fasaha zai ƙayyade makomar semiconductor ta China.

 

XKH ta fito a matsayin mai samar da mafita mai haɗaka a tsaye wanda ya ƙware a fannin kayan semiconductor na zamani a cikin ƙarni daban-daban na fasaha. Tare da ƙwarewar da ta shafi ci gaban lu'ulu'u, sarrafa daidaito, da fasahar rufewa mai aiki, XKH tana ba da manyan abubuwan da ke aiki da kuma wafers na epitaxial don aikace-aikacen zamani a cikin na'urorin lantarki na lantarki, sadarwa ta RF, da tsarin optoelectronic. Tsarin masana'antarmu ya ƙunshi hanyoyin mallakar kayan aiki don samar da wafers na silicon carbide mai inci 4-8 da gallium nitride tare da sarrafa lahani na masana'antu, yayin da take kula da shirye-shiryen R&D masu aiki a cikin kayan bandeji masu tasowa waɗanda suka haɗa da gallium oxide da lu'u-lu'u semiconductors. Ta hanyar haɗin gwiwa mai mahimmanci tare da manyan cibiyoyin bincike da masana'antun kayan aiki, XKH ta ƙirƙiri dandamali mai sassauƙa wanda zai iya tallafawa masana'antar samfura masu yawa da haɓaka musamman na mafita na kayan aiki na musamman. Ƙwarewar fasaha ta XKH ta mayar da hankali kan magance ƙalubalen masana'antu masu mahimmanci kamar inganta daidaiton wafer don na'urorin wutar lantarki, haɓaka sarrafa zafi a cikin aikace-aikacen RF, da haɓaka sabbin hanyoyin heterostructures don na'urorin photonic na zamani. Ta hanyar haɗa kimiyyar kayan zamani da ƙwarewar injiniya mai daidaito, XKH tana bawa abokan ciniki damar shawo kan iyakokin aiki a aikace-aikacen yanayi mai yawa, mai ƙarfi, da kuma yanayi mai tsauri yayin da take tallafawa sauyin masana'antar semiconductor ta cikin gida zuwa ga samun 'yancin kai daga sarkar samar da kayayyaki.

 

 

Ga waɗannan nau'ikan wafer ɗin sapphire mai inci 12 na XKH da kuma siC mai inci 12:
Wafer mai launin shuɗi mai inci 12

 

 

 


Lokacin Saƙo: Yuni-06-2025