Hasashe da Kalubale don Kayayyakin Semiconductor na ƙarni na biyar

Semiconductors suna aiki a matsayin ginshiƙi na zamanin bayanai, tare da kowane juzu'in kayan aiki yana sake fasalta iyakokin fasahar ɗan adam. Daga na'ura mai ba da hanya tsakanin hanyoyin sadarwa na ƙarni na farko zuwa na zamani na ƙarni na huɗu na yau matsananci-faɗin bandgap, kowane tsalle-tsalle na juyin halitta ya haifar da ci gaban canji a cikin sadarwa, kuzari, da ƙididdiga. Ta hanyar nazarin halaye da dabaru na mika mulki na tsararraki na kayan aikin semiconductor da ake da su, za mu iya hasashen hanyoyin da za a bi wajen samar da na'urori na zamani na biyar, yayin da ake nazarin hanyoyin dabarun kasar Sin a wannan fagen gasa.

 

I. Halaye da Dabarun Juyin Halitta na Ƙungiyoyin Semiconductor Hudu

 

Semiconductors na Farko: The Silicon-Germanium Foundation Era


Halayen: Elemental semiconductors kamar silicon (Si) da germanium (Ge) suna ba da ingantaccen farashi da tsarin masana'antu balagagge, duk da haka suna fama da kunkuntar bandgaps (Si: 1.12 eV; Ge: 0.67 eV), iyakance juriya da ƙarfin lantarki da aiki mai girma.
Aikace-aikace: Haɗaɗɗen da'irori, ƙwayoyin hasken rana, ƙananan ƙarfin lantarki/ƙananan na'urori masu ƙarfi.
Direban Canjawa: Buƙatar haɓakar aiki mai girma/zazzabi a cikin optoelectronics ya zarce ƙarfin silicon.

Si wafer & Ge na gani windows_副本

Semiconductors na ƙarni na biyu: Juyin Juyin Halitta na III-V


Halaye: III-V mahadi kamar gallium arsenide (GaAs) da indium phosphide (InP) sun ƙunshi manyan bandgaps (GaAs: 1.42 eV) da babban motsi na lantarki don RF da aikace-aikacen photonic.
Aikace-aikace: 5G RF na'urorin, Laser diodes, tauraron dan adam sadarwa.
Kalubale: Karancin kayan abu (yawan indium: 0.001%), abubuwa masu guba (arsenic), da tsadar samarwa.
Direban Canjawa: Makamashi/Aikace-aikacen wutar lantarki sun buƙaci kayan aiki tare da manyan ƙarfin rushewa.

GaAs wafer & InP wafer_副本

 

Semiconductors na ƙarni na uku: Faɗin Ƙarfafa Makamashi

 


Halaye: Silicon carbide (SiC) da gallium nitride (GaN) suna sadar da bandgaps> 3eV (SiC: 3.2eV; GaN: 3.4eV), tare da ingantaccen haɓakar thermal da halaye masu girma.
Aikace-aikace: EV powertrains, PV inverters, 5G kayayyakin more rayuwa.
Abũbuwan amfãni: 50%+ tanadin makamashi da rage girman 70% da silicon.
Direban Canjawa: AI/ ƙididdigar ƙididdiga na buƙatar kayan aiki tare da matsananciyar awo.

SiC wafer & GaN wafer_副本

Semiconductors na ƙarni na huɗu: Ƙarfafa Bandgap mai iyaka


Halaye: Gallium oxide (Ga₂O₃) da lu'u-lu'u (C) sun cimma gaɓoɓin bandeji har zuwa 4.8eV, suna haɗuwa da juriya mara ƙarancin ƙarfi tare da juriya na ajin kV.
Aikace-aikace: Ultra-high-voltage ICs, zurfin-UV ganowa, jimla sadarwar.
Cigaba: Na'urorin Ga₂O₃ suna jure wa> 8kV, ƙwarewar SiC har sau uku.
Ma'anar Juyin Halitta: Ana buƙatar tsalle-tsalle-ƙididdigar aiki don shawo kan iyakokin jiki.

Ga₂O₃ wafer & GaN On Diamond_副本

I. Juni na Biyar Ƙarfafa Ƙwararrun Ƙwararru: Ƙirar Materials & 2D Architectures

 

Abubuwan da za su iya haɓaka haɓaka sun haɗa da:

 

1. Topological Insulators: Gudanar da saman saman tare da babban rufi yana ba da damar rashin hasara na lantarki.

 

2. 2D Materials: Graphene/MoS₂ suna ba da amsa mitar THz da daidaitawar kayan lantarki.

 

3. Ƙididdigar ƙididdigewa & Crystals Photonic: Injiniyan Bandgap yana ba da damar haɗin kai na optoelectronic-thermal.

 

4. Bio-Semiconductors: DNA/protein-tushen kayan haɗa kai gada ilmin halitta da lantarki.

 

5. Maɓallin Direbobi: AI, mu'amalar kwamfuta-kwakwalwa, da buƙatun yanayin zafin ɗaki.

 

II. Damar Semiconductor na China: Daga Mabiyi zuwa Jagora

 

1. Cigaban Fasaha
• 3rd-Gen: Mass samar da 8-inch SiC substrates; SiC MOSFETs na motoci a cikin motocin BYD
• 4th-Gen: 8-inch Ga₂O₃ ci gaban epitaxy na XUPT da CETC46

 

2. Tallafin Siyasa
• Tsari na shekaru biyar na 14 ya ba da fifiko ga na'urori masu zaman kansu na 3rd-gen
• An kafa asusun masana'antu na lardin Yuan biliyan ɗari

 

• Matsakaicin 6-8 inch GaN na'urorin da Ga₂O₃ transistor da aka jera a cikin manyan ci gaban fasaha 10 a cikin 2024

 

III. Kalubale da Dabarun Magani

 

1. Kayan kwalliyar Fasaha
• Girman Crystal: Ƙananan yawan amfanin ƙasa don manyan diamita na boules (misali, Ga₂O₃ fashe)
• Ka'idodin dogaro: Rashin ƙayyadaddun ka'idoji don gwaje-gwajen tsufa masu ƙarfi/maɗaukakiyar girma

 

2. Gimbin Sarkar Supply
• Kayan aiki: <20% abun ciki na cikin gida don masu shuka SiC crystal
Karɓa: fifikon ƙasa don abubuwan da aka shigo da su

 

3. Hanyoyi Dabarun

• Haɗin gwiwar Masana'antu-Makarantar: Samfuran bayan "Ƙungiyar Semiconductor Alliance na Uku"

 

• Mayar da hankali: Ba da fifikon hanyoyin sadarwa na ƙididdigewa/sabbin kasuwannin makamashi

 

• Haɓaka Hazaka: Kafa shirye-shiryen ilimi na "Chip Science & Engineering".

 

Daga silicon zuwa Ga₂O₃, juyin halittar semiconductor yana ba da labarin nasarar ɗan adam akan iyakokin jiki. Damar da kasar Sin ta samu ya ta'allaka ne wajen sarrafa kayayyakin zamani na hudu, yayin da suke fara aikin kirkire-kirkire na karni na biyar. Kamar yadda Masanin Ilimi Yang Deren ya lura: "Ƙirƙirar gaskiya tana buƙatar ƙirƙira hanyoyin da ba a bi ba." Haɗin kai na manufofi, babban birnin kasar, da fasaha zai tabbatar da makomar masana'antar ta Sin.

 

XKH ta fito a matsayin mai ba da mafita mai haɗa kai tsaye ƙware a cikin kayan aikin semiconductor a cikin ƙarni na fasaha da yawa. Tare da mahimman ƙwarewar haɓaka haɓakar kristal, daidaitaccen aiki, da fasahar suturar aiki, XKH tana ba da manyan ayyuka masu ƙarfi da wafers don yanke aikace-aikace a cikin wutar lantarki, sadarwar RF, da tsarin optoelectronic. Tsarin halittun masana'antar mu ya ƙunshi matakai na mallakar mallaka don samar da 4-8 inch silicon carbide da gallium nitride wafers tare da sarrafa lahani na masana'antu, yayin da ke riƙe shirye-shiryen R&D masu aiki a cikin abubuwan banɗaki mai fa'ida mai fa'ida gami da gallium oxide da lu'u-lu'u semiconductor. Ta hanyar haɗin gwiwar dabarun tare da manyan cibiyoyin bincike da masana'antun kayan aiki, XKH ya haɓaka tsarin samar da sassauƙa wanda zai iya tallafawa duka manyan ƙira na samfuran daidaitattun samfura da haɓaka na musamman na samfuran kayan aiki na musamman. Ƙwarewar fasaha ta XKH tana mai da hankali kan magance ƙalubalen masana'antu masu mahimmanci kamar haɓaka daidaiton wafer don na'urorin wutar lantarki, haɓaka sarrafa zafi a aikace-aikacen RF, da haɓaka sabbin hanyoyin samar da kayan aikin hoto na gaba. Ta hanyar haɗa ilimin kimiyyar abu mai ci gaba tare da ingantaccen aikin injiniya, XKH yana bawa abokan ciniki damar shawo kan iyakokin aiki a cikin babban mita, ƙarfin ƙarfi, da matsananciyar aikace-aikacen yanayi yayin da ke tallafawa canjin masana'antar semiconductor na cikin gida zuwa mafi girman sarkar samar da 'yancin kai.

 

 

Wadannan sune wafer 12inchsapphire na XKH & 12inch SiC substrate:
12 inch sapphire wafer

 

 

 


Lokacin aikawa: Juni-06-2025