Silicon Carbide Waveguide AR Gilashin Na gani-Grade: Shirye-shiryen Tsabtace Tsabtace Tsabtace Mai Tsafta

Dangane da yanayin juyin juya halin AI, gilashin AR suna shiga hankalin jama'a a hankali. A matsayin tsarin da ke haɗa kama-da-wane da duniyoyi na gaske ba tare da matsala ba, gilashin AR sun bambanta da na'urorin VR ta hanyar kyale masu amfani su tsinkayi hotuna na dijital da hasken muhalli a lokaci guda. Don cimma wannan aiki na dual-nau'ikan hotunan microdisplay a cikin idanu yayin da ake kiyaye watsa hasken waje - gilashin AR na tushen gani na gani na silicon carbide (SiC) yana amfani da tsarin gine-ginen waveguide (lightguide). Wannan ƙira yana ba da damar juyar da tunani na ciki don watsa hotuna, kwatankwacin watsa fiber na gani, kamar yadda aka kwatanta a cikin zane-zane.

Yawanci, ɓangarorin 6-inch mai tsafta mai tsafta mai tsafta na iya samar da nau'i-nau'i na gilashin, yayin da ɗigon inch 8 yana ɗaukar nau'i-nau'i 3-4. Yin amfani da kayan SiC yana ba da fa'idodi masu mahimmanci guda uku:

1. Fihirisar refractive (2.7): Yana ba da damar> 80° cikakken filin kallo (FOV) tare da Layer ruwan tabarau guda ɗaya, yana kawar da kayan aikin bakan gizo gama gari a ƙirar AR ta al'ada.
2. Haɗe-haɗe-haɗe-haɗe-haɗe-haɗe-haɗe-haɗe (RGB): Yana maye gurbin tulin jagororin raƙuman ruwa masu yawa, rage girman na'urar da nauyi.
3. Maɗaukakin haɓakar yanayin zafi (490 W/m·K): Yana rage gurɓacewar gani mai haifar da tara zafi.

Waɗannan cancantar sun haifar da buƙatun kasuwa mai ƙarfi don gilashin AR na tushen SiC. SiC na gani na gani da aka yi amfani da shi yawanci ya ƙunshi lu'ulu'u masu tsafta na Semi-insulating (HPSI), waɗanda ƙaƙƙarfan buƙatun shirye-shiryen suna ba da gudummawa ga babban farashi na yanzu. Sakamakon haka, haɓakar abubuwan maye gurbin HPSI SiC yana da mahimmanci.

1. Ƙwararren Ƙwararren SiC Foda na Semi-Insulating
Samar da sikelin masana'antu galibi yana amfani da haɓakar haɓakar zafin jiki mai ƙarfi (SHS), tsari mai buƙatar kulawa sosai:

• Raw kayan: 99.999% tsarki carbon / silicon powders tare da barbashi masu girma dabam na 10-100 μm.
• Tsaftar da ba ta da ƙarfi: Abubuwan da aka haɗa zanen zane suna jure yanayin tsaftar zafin jiki don rage ƙarancin ƙazanta na ƙarfe.
• Gudanar da yanayi: 6N-tsarki argon (tare da masu tsabtace layi) yana hana haɗakar nitrogen; gano iskar HCl/H₂ ana iya gabatar da su don daidaita mahaɗan boron da rage nitrogen, kodayake maida hankali H₂ yana buƙatar ingantawa don hana lalata graphite.
• Ka'idodin kayan aiki: Tanderun ƙira dole ne su cimma <10⁻ Pa base vacuum, tare da ƙaƙƙarfan ƙa'idodin duba leak.

2. Kalubalen Girman Crystal
Ci gaban HPSI SiC yana raba buƙatun tsabta iri ɗaya:

• Abincin abinci: 6N+-tsarki SiC foda tare da B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O ƙasa da iyakar kofa, da ƙananan ƙarfe alkali (Na/K).
• Tsarin gas: 6N argon / hydrogen blends yana haɓaka juriya.
• Kayan aiki: famfo na kwayoyin halitta suna tabbatar da matsananciyar injin (<10⁻⁶ Pa); crucible pre-jiyya da nitrogen tsarkakewa suna da muhimmanci.

Ƙirƙirar Ƙirƙirar Substrate
Idan aka kwatanta da silicon, SiC's tsawan tsayin hawan hawan girma da damuwa na asali (wanda ke haifar da fashewa / guntun gefen) yana buƙatar aiki mai zurfi:

• Laser slicing: Yana ƙara yawan amfanin ƙasa daga 30 wafers (350 μm, waya saw) zuwa> 50 wafers a kowace 20-mm boule, tare da yuwuwar 200-μm thinning. Lokacin sarrafawa yana saukowa daga kwanaki 10-15 (waya saw) zuwa <20 min/wafer don lu'ulu'u 8-inch.

3. Haɗin gwiwar Masana'antu

Tawagar Orion ta Meta ta yi yunƙurin karɓo jagororin SiC na gani na gani, wanda ya haifar da saka hannun jari na R&D. Babban haɗin gwiwa sun haɗa da:

• TankeBlue & MUDI Micro: Haɗin haɗin gwiwa na AR diffractive waveguide ruwan tabarau.
• Jingsheng Mech, Longqi Tech, XREAL, & Kunyou Optoelectronics: Haɗin kai don haɗa sarkar samar da AI/AR.

Hasashen kasuwa yana ƙididdige raka'o'in AR na tushen SiC 500,000 kowace shekara ta 2027, suna cinye 250,000 6-inch (ko 125,000 8-inch). Wannan yanayin yana jaddada rawar da SiC ke ta canzawa a cikin abubuwan gani na AR na gaba.

XKH ƙwararre a cikin samar da manyan 4H-semi-insulating (4H-SEMI) SiC substrates tare da diamita masu daidaitawa daga 2-inch zuwa 8-inch, wanda aka keɓance don saduwa da takamaiman buƙatun aikace-aikacen a cikin RF, wutar lantarki, da AR / VR optics. Ƙarfin mu ya haɗa da ingantaccen samar da ƙararrawa, daidaitaccen gyare-gyare (kauri, daidaitawa, ƙarewar ƙasa), da cikakken aiki a cikin gida daga haɓakar crystal zuwa gogewa. Bayan 4H-SEMI, muna kuma bayar da nau'in 4H-N, nau'in 4H/6H-P-nau'in, da 3C-SiC substrates, suna tallafawa nau'ikan semiconductor da sabbin abubuwa na optoelectronic.