Gilashin AR na Silicon Carbide Waveguide: Shirye-shiryen Substrates Masu Tsabta Mai Tsafta

A bayan juyin juya halin AI, gilashin AR suna shiga cikin wayewar jama'a a hankali. A matsayin wani tsari wanda ke haɗa duniyoyin kama-da-wane da na gaske ba tare da wata matsala ba, gilashin AR ya bambanta da na'urorin VR ta hanyar ba masu amfani damar fahimtar hotunan da aka tsara ta hanyar dijital da hasken muhalli a lokaci guda. Don cimma wannan aiki biyu - nuna hotunan microdisplay a cikin idanu yayin da ake kiyaye watsa haske na waje - gilashin AR mai tushen silicon carbide (SiC) suna amfani da tsarin jagorar waveguide (littafi). Wannan ƙira tana amfani da cikakken tunani na ciki don aika hotuna, kamar watsa fiber na gani, kamar yadda aka nuna a cikin zane-zanen zane.

Yawanci, wani abu mai kauri inci 6 mai tsafta mai kauri zai iya samar da tabarau biyu, yayin da wani abu mai kauri inci 8 zai iya daukar nau'i 3-4. Amfani da kayan SiC yana ba da fa'idodi uku masu mahimmanci:

1. Ma'aunin haske na musamman (2.7): Yana kunna filin gani mai launi sama da 80° (FOV) tare da layin ruwan tabarau guda ɗaya, yana kawar da kayan tarihi na bakan gizo da aka saba gani a cikin ƙirar AR ta gargajiya.
2. Jagorar raƙuman ruwa mai launuka uku (RGB) mai haɗawa: Yana maye gurbin tarin jagororin raƙuman ruwa mai matakai da yawa, yana rage girman na'urar da nauyi.
3. Mafi kyawun yanayin zafi (490 W/m·K): Yana rage lalacewar gani da ke haifar da tarin zafi.

Waɗannan fa'idodi sun haifar da buƙatar kasuwa ga gilashin AR na SiC. SiC mai inganci da ake amfani da shi galibi ya ƙunshi lu'ulu'u masu tsafta (HPSI), waɗanda buƙatun shiri masu tsauri ke haifar da tsadar farashi a halin yanzu. Saboda haka, haɓaka abubuwan da aka yi amfani da su na HPSI SiC yana da matuƙar muhimmanci.

1. Haɗa Foda SiC Mai Rufewa
Samar da kayayyaki a sikelin masana'antu galibi yana amfani da haɗakar da ke yaɗuwa da kanta mai zafi (SHS), wani tsari da ke buƙatar kulawa mai kyau:

• Kayan da aka samar: 99.999% na foda mai tsabta na carbon/silicon tare da girman barbashi na 10-100 μm.
• Tsarkakakken Crucible: Ana yin tsarkakewar sinadaran graphite mai zafi sosai don rage yaɗuwar ƙazanta ta ƙarfe.
• Kula da Yanayi: Argon mai tsarki na 6N (tare da masu tsarkakewa a layi) yana hana shigar da nitrogen; ana iya shigar da iskar gas ta HCl/H₂ don rage yawan sinadarin boron da kuma rage sinadarin nitrogen, kodayake yawan H₂ yana buƙatar ingantawa don hana tsatsa graphite.
• Ka'idojin Kayan Aiki: Tanderun haɗaka dole ne su cimma injin tsabtace ƙasa mai nauyin ƙasa da 10⁻⁴, tare da tsauraran ka'idojin duba zubewa.

2. Kalubalen Ci gaban Crystal
Ci gaban HPSI SiC yana da irin waɗannan buƙatu na tsarki:

• Kayan Abinci: Foda mai tsarki na 6N+ tare da B/Al/N <10¹⁶ cm⁻³, Fe/Ti/O ƙasa da iyakokin iyaka, da ƙarancin ƙarfe na alkali (Na/K).
• Tsarin iskar gas: Haɗin argon/hydrogen na 6N yana ƙara juriya.
• Kayan Aiki: Famfon ƙwayoyin halitta suna tabbatar da injin tsabtace iska mai ƙarfi sosai (<10⁻⁶ Pa); kafin a fara amfani da maganin da kuma tsaftace sinadarin nitrogen suna da matuƙar muhimmanci.

2.1 Sabbin Dabaru Kan Sarrafa Substrate
Idan aka kwatanta da silicon, tsawon lokacin da SiC ke ɗauka na girma da damuwa (haifar da fashewa/ɓangaren gefuna) yana buƙatar ingantaccen aiki:

• Yankan Laser: Yana ƙara yawan amfanin ƙasa daga wafers 30 (350 μm, wayoyi masu yanke waya) zuwa wafers sama da 50 a kowace boule na 20-mm, tare da yuwuwar rage girman 200-μm. Lokacin sarrafawa yana raguwa daga kwanaki 10-15 (wayoyi masu yanke waya) zuwa ƙasa da minti 20 a kowace wafer ga lu'ulu'u masu inci 8.

3. Haɗin gwiwar Masana'antu

Ƙungiyar Orion ta Meta ta fara amfani da na'urar hangen nesa ta SiC, wadda ta haɓaka saka hannun jari a fannin bincike da ci gaba. Manyan haɗin gwiwa sun haɗa da:

• TankeBlue & MUDI Micro: Haɗakar haɗin gwiwar ruwan tabarau na AR diffractive waveguide.
• Jingsheng Mech, Longqi Tech, XREAL, & Kunyou Optoelectronics: Haɗin gwiwa mai mahimmanci don haɗa sarkar samar da kayayyaki ta AI/AR.

Hasashen kasuwa ya kiyasta cewa za a sami na'urorin AR guda 500,000 da ke amfani da SiC a kowace shekara nan da shekarar 2027, suna cinye na'urori masu girman inci 6 (ko inci 125,000) guda 250,000. Wannan yanayin yana nuna rawar da SiC ke takawa a cikin na'urorin AR na zamani.

XKH ta ƙware wajen samar da ƙananan sinadirai masu inganci na 4H-semi-insulating (4H-SEMI) SiC tare da diamita mai daidaitawa wanda aka tsara don biyan takamaiman buƙatun aikace-aikace a cikin RF, na'urorin lantarki masu ƙarfi, da na'urorin gani na AR/VR. Ƙarfinmu ya haɗa da wadatar girma mai inganci, keɓancewa daidai (kauri, daidaitawa, kammala saman), da kuma cikakken sarrafawa a cikin gida daga girma na lu'ulu'u zuwa gogewa. Bayan 4H-SEMI, muna kuma bayar da nau'ikan sinadirai masu nau'in 4H-N, nau'in 4H/6H-P, da 3C-SiC, suna tallafawa sabbin abubuwa na semiconductor da optoelectronic daban-daban.