Takaitawa:Mun haɓaka lithium tantalate waveguide na tushen insulator na 1550 nm tare da asarar 0.28 dB/cm da ƙimar ingancin resonator na 1.1 miliyan. An yi nazarin aikace-aikacen χ(3) rashin layi a cikin hotuna marasa kan layi. Fa'idodin lithium niobate akan insulator (LNoI), wanda ke nuna kyawawan kaddarorin χ(2) da χ(3) mara kyau tare da ƙaƙƙarfan tsarewar gani saboda tsarin sa na "insulator-on", ya haifar da ci gaba mai mahimmanci a fasahar waveguide don ultrafast. masu daidaitawa da haɗe-haɗe na hotuna marasa kan layi [1-3]. Baya ga LN, an kuma bincika lithium tantalate (LT) azaman kayan hoto marasa kan layi. Idan aka kwatanta da LN, LT yana da babban kofa na lalacewar gani da kuma faffadar taga bayyananniyar gani [4, 5], kodayake sigoginsa na gani, kamar fihirisar da ba ta dace ba, suna kama da na LN [6, 7]. Don haka, LToI ya fice a matsayin wani ƙaƙƙarfan kayan ɗan takara don babban ikon gani mara amfani da aikace-aikacen hoto. Haka kuma, LToI yana zama abu na farko don na'urori masu tacewa (SAW), masu aiki a cikin fasahar wayar hannu mai sauri da mara waya. A cikin wannan mahallin, wafers na LToI na iya zama kayan aikin gama gari don aikace-aikacen hoto. Duk da haka, har zuwa yau, 'yan na'urorin photonic ne kawai bisa LToI aka ruwaito, kamar microdisk resonators [8] da electro-optic phases shifters [9]. A cikin wannan takarda, muna gabatar da jagorar raƙuman ruwa na LToI mai ƙarancin asara da aikace-aikacen sa a cikin resonator na zobe. Bugu da ƙari, muna samar da χ(3) halaye marasa kan layi na jagoran waveguide na LToI.
Mabuɗin Maɓalli:
• Bayar da wafers na 4-inch zuwa 6-inch LToI, sirara-fim lithium tantalate wafers, tare da kauri daga saman Layer daga 100 nm zuwa 1500 nm, ta yin amfani da fasahar cikin gida da manyan matakai.
• SINOI: Silicon nitride bakin ciki-fim wafers.
• SICOI: High-tsarki Semi-insulating silicon carbide bakin ciki-film substrates ga silicon carbide photonic hadedde da'irori.
• LTOI: Babban mai fafatawa ga lithium niobate, sirara-fim lithium tantalate wafers.
• LNOI: 8-inch LNOI yana goyan bayan yawan samar da samfuran lithium niobate mafi girma-fim.
Kera kan Insulator Waveguides:A cikin wannan binciken, mun yi amfani da wafers na 4-inch LToI. Babban LT Layer shine kasuwanci 42° juyawa Y-cut LT substrate don na'urorin SAW, wanda aka haɗa kai tsaye zuwa siginar Si mai kauri mai kauri na 3 µm, yana amfani da tsarin yanke wayo. Hoto 1 (a) yana nuna babban ra'ayi na wafer LToI, tare da kauri na saman LT na 200 nm. Mun yi la'akari da tarkace saman saman LT Layer ta amfani da microscopy mai ƙarfi na atomic (AFM).
Hoto 1.(a) Babban ra'ayi na wafer na LToI, (b) Hoton AFM na saman saman LT Layer, (c) Hoton PFM na saman saman LT Layer, (d) Tsarin giciye-tsayi na jagorar wave na LToI, (e) Ƙididdigar mahimmancin bayanin martabar yanayin TE, da (f) Hoton SEM na ainihin jagoran waveguide na LToI kafin jigon SiO2 mai rufi. Kamar yadda aka nuna a cikin Hoto 1 (b), rashin ƙarfi na saman bai wuce 1 nm ba, kuma ba a lura da layukan karce ba. Bugu da ƙari, mun bincika yanayin polarization na saman LT Layer ta amfani da microscopy na amsawar amsawar piezoelectric (PFM), kamar yadda aka nuna a hoto 1 (c). Mun tabbatar da cewa an kiyaye polarization iri ɗaya ko da bayan tsarin haɗin gwiwa.
Ta amfani da wannan substrate na LToI, mun ƙirƙira waveguide kamar haka. Da farko, an ajiye abin rufe fuska na ƙarfe don busasshen etching na LT na gaba. Bayan haka, an yi lithography na lantarki (EB) don ayyana ainihin ƙirar waveguide a saman Layer mashin ƙarfe. Na gaba, mun canja wurin EB tsayayya juna zuwa karfe abin rufe fuska Layer via bushe etching. Bayan haka, an ƙirƙiri core waveguide LToI ta amfani da resonance na electron cyclotron (ECR) plasma etching. A ƙarshe, an cire Layer abin rufe fuska na ƙarfe ta hanyar rigar tsari, kuma an ajiye abin rufe fuska na SiO2 ta amfani da ƙwayar tururin sinadarai mai haɓaka plasma. Hoto na 1 (d) yana nuna tsarin giciye-sashe na jagorar wave na LToI. Jimlar tsayin jigon, tsayin faranti, da faɗin ainihin su ne 200nm, 100nm, da 1000nm, bi da bi. Lura cewa ainihin nisa yana faɗaɗa zuwa 3 µm a gefen waveguide don haɗin fiber na gani.
Hoto 1 (e) yana nuna ƙididdigar ƙarfin gani mai ƙididdigewa na ainihin yanayin wutar lantarki (TE) a 1550 nm. Hoto 1 (f) yana nuna hoton microscope na lantarki (SEM) na core waveguide na LToI kafin a saka mai rufin SiO2.
Halayen Waveguide:Mun fara kimanta halayen asara na layi ta hanyar shigar da hasken TE-polarized daga madaidaicin raƙuman raƙuman ruwa na 1550nm wanda ya haɓaka tushen fitar da lokaci zuwa cikin jagororin raƙuman ruwa na LToI na tsayi daban-daban. An samu asarar yaduwa daga gangaren alakar da ke tsakanin tsayin waveguide da watsawa a kowane tsawon zango. Asarar yaɗuwar da aka auna shine 0.32, 0.28, da 0.26 dB/cm a 1530, 1550, da 1570 nm, bi da bi, kamar yadda aka nuna a Hoto 2 (a). Ƙirƙirar jagorar raƙuman ruwa na LToI sun nuna kwatankwacin ƙarancin asara zuwa jagororin naɗaɗɗen fasahar LNoI [10].
Na gaba, mun ƙididdige χ(3) rashin daidaituwa ta hanyar jujjuyawar tsayin raƙuman ruwa da aka samar ta hanyar haɗakar raƙuman ruwa huɗu. Muna shigar da hasken famfo mai ci gaba a 1550.0 nm da hasken sigina a 1550.6 nm cikin jagorar igiyar ruwa mai tsayi 12 mm. Kamar yadda aka nuna a Hoto na 2 (b), ƙarfin siginar haske na lokaci-conjugate (idler) ya ƙaru tare da ƙara ƙarfin shigarwa. Wurin da aka shigar a cikin Hoto 2 (b) yana nuna nau'in nau'in fitarwa na yau da kullun na hadakar raƙuman ruwa huɗu. Daga alakar da ke tsakanin ikon shigarwa da ingantaccen juzu'i, mun kiyasta ma'aunin da ba na kan layi ba (γ) ya zama kusan 11 W^-1m.
Hoto 3.(a) Hoton microscope na ƙirar zobe mai resonator. (b) Bakan watsawa na resonator na zobe tare da sigogi daban-daban. (c) Aunawa da Lorentzian-fitted watsa bakan watsawa na resonator na zobe tare da tazarar 1000 nm.
Bayan haka, mun ƙirƙiri resonator na zobe na LToI kuma mun kimanta halayen sa. Hoto na 3 (a) yana nuna hoton microscope na gani na resonator da aka ƙirƙira. Resonator na zobe yana da fasalin tsarin "tseren tsere", wanda ya ƙunshi yanki mai lanƙwasa tare da radius na 100 µm da madaidaiciyar yanki na 100 µm tsayin. Faɗin tazarar da ke tsakanin zobe da core waveguide bas ya bambanta da ƙarin 200 nm, musamman a 800, 1000, da 1200 nm. Hoto na 3 (b) yana nuna bakan watsawa ga kowane rata, yana nuna cewa rabon ɓarna yana canzawa tare da girman rata. Daga waɗannan bakan, mun ƙaddara cewa rata na 1000 nm yana samar da yanayin haɗakarwa kusan kusan mahimmanci, kamar yadda yake nuna mafi girman rabo na -26 dB.
Yin amfani da resonator mai mahimmanci, mun ƙididdige ma'aunin inganci (Q factor) ta hanyar dacewa da jigilar jigilar layi tare da lanƙwan Lorentzian, samun ma'aunin Q na ciki na 1.1 miliyan, kamar yadda aka nuna a cikin Hoto 3 (c). A iya saninmu, wannan shine farkon nunin na'urar mai sautin zoben LToI mai haɗe-haɗe. Musamman ma, ƙimar Q factor ɗin da muka samu yana da girma sosai fiye da na fiber-coupled LToI microdisk resonators [9].
Ƙarshe:Mun ɓullo da wani LToI waveguide tare da asarar 0.28 dB/cm a 1550 nm da zobe resonator Q factor na 1.1 miliyan. Ayyukan da aka samu yayi kwatankwacin na zamani na ƙananan asarar LNoI. Bugu da ƙari, mun bincika rashin daidaituwa na χ(3) na ƙera waveguide na LToI don aikace-aikace marasa kan-chip.
Lokacin aikawa: Nuwamba-20-2024