Mabuɗin Mahimmanci don Babban Ingantacciyar Silicon Carbide Single Crystal Preparation

Babban hanyoyin don shirye-shiryen kristal guda ɗaya na silicon sun haɗa da: Jirgin Ruwa na Jiki (PVT), Ci gaban Magani Mai Girma (TSSG), da Tushen Tushen Ruwan Haɗaɗɗen Zazzabi (HT-CVD). Daga cikin waɗannan, ana amfani da hanyar PVT sosai a cikin samar da masana'antu saboda kayan aiki mai sauƙi, sauƙi na sarrafawa, da ƙananan kayan aiki da farashin aiki.

Mahimman Bayanan Fasaha don Ci gaban PVT na Silicon Carbide Crystals

Lokacin girma lu'ulu'u na silicon carbide ta amfani da hanyar Jirgin Jirgin Jiki (PVT), dole ne a yi la'akari da abubuwan fasaha masu zuwa:

1. Tsaftar Kayan Hotuna a cikin Gidan Girma: Abubuwan ƙazanta a cikin abubuwan graphite dole ne su kasance ƙasa da 5 × 10⁻⁶, yayin da ƙazantaccen abun ciki a cikin rufin da ake ji dole ne ya kasance ƙasa da 10 × 10⁻⁶. Abubuwan kamar B da Al yakamata a kiyaye su ƙasa da 0.1 × 10⁻⁶.
2. Madaidaicin Seed Crystal Polarity Selection: Nazarin ƙwaƙƙwara ya nuna cewa fuskar C (0001) ta dace da girma lu'ulu'u na 4H-SiC, yayin da ake amfani da fuskar Si (0001) don haɓaka lu'ulu'u na 6H-SiC.
3. Amfani da Kashe-Axis iri lu'ulu'u: Kashe-axis iri lu'ulu'u na iya canza yanayin girma na crystal, rage lahani a cikin crystal.
4. Tsari Tsari Mai Kyau Crystal Bonding.
5. Kiyaye Kwanciyar Hankali na Mutuwar Ci gaban Crystal Yayin Zagayowar Girma.

Mabuɗin Fasaha don Ci gaban Silicon Carbide Crystal

1. Fasahar Doping don Silicon Carbide Foda
   Doping da silicon carbide foda tare da adadin da ya dace na Ce zai iya daidaita ci gaban 4H-SiC guda lu'ulu'u. Sakamakon aiki ya nuna cewa Ce doping na iya:

• Ƙara yawan ci gaban siliki carbide lu'ulu'u.
• Sarrafa daidaitawar ci gaban kristal, yana sa ya zama mafi daidaituwa da na yau da kullun.
• Danne samuwar ƙazanta, rage lahani da sauƙaƙe samar da lu'ulu'u-ɗaya da inganci.
• Hana lalacewar kristal na baya da haɓaka yawan amfanin ƙasa-crystal.

• Fasahar Sarrafa Gradient na Axial da Radial
  Matsakaicin zafin jiki na axial da farko yana rinjayar nau'in girma da inganci. Ƙaramin ƙananan zafin jiki fiye da kima zai iya haifar da samuwar polycrystalline kuma ya rage yawan girma. Madaidaicin axial da radial zafin jiki gradients sauƙaƙe saurin ci gaban kristal na SiC yayin da yake riƙe ingantaccen ingancin crystal.
• Basal Plane Dislocation (BPD) Sarrafa Fasaha
  Lalacewar BPD galibi suna tasowa lokacin da damuwa mai ƙarfi a cikin kristal ya zarce matsananciyar damuwa na SiC, yana kunna tsarin zamewa. Tun da BPDs sun kasance daidai gwargwado ga jagorar ci gaban kristal, suna farawa da farko yayin girma da sanyaya.
• Fasahar Daidaita Matsayin Rubutu Rubutu
  Haɓaka rabon carbon-to-silicon a cikin yanayin haɓaka shine ma'auni mai tasiri don daidaita ci gaban-crystal guda ɗaya. Matsakaicin madaidaicin carbon-to-silicon yana rage babban bunching mataki, yana adana bayanan ci gaban kristal iri, kuma yana hana samuwar polytype.
• Fasahar Kula da Ƙananan Matsi
  Damuwa yayin ci gaban kristal na iya haifar da lankwasawa na jirage na kristal, wanda ke haifar da ƙarancin ingancin crystal ko ma fashewa. Babban damuwa kuma yana ƙara ɓarna jirgin saman basal, wanda zai iya yin illa ga ingancin Layer epitaxial da aikin na'urar.

Hoton SiC wafer 6-inch

Hanyoyi don Rage Damuwa a cikin Crystals:

• Daidaita rarraba filin zafin jiki da sigogin tsari don ba da damar haɓaka kusan daidaitattun lu'ulu'u na SiC guda ɗaya.
• Haɓaka tsarin ƙirƙira don ba da damar haɓakar kristal kyauta tare da ƙanƙantar takurawa.
• Gyara dabarun gyara kristal iri don rage rashin daidaituwar haɓakar zafi tsakanin kristal iri da mariƙin hoto. Hanyar gama gari ita ce barin tazarar mm 2 tsakanin kristal iri da mariƙin graphite.
• Haɓaka matakai na ɓarna ta hanyar aiwatar da murɗa wutar lantarki a cikin wurin, daidaita yanayin zafi da tsawon lokaci don sakin damuwa na ciki gabaɗaya.

Yanayin gaba a Fasahar Ci gaban Silicon Carbide Crystal

Duba gaba, fasahar shirye-shiryen kristal mai inganci SiC guda ɗaya za ta haɓaka a cikin waɗannan kwatance:

1. Babban Girman Girma
   Diamita na silicon carbide lu'ulu'u ɗaya ya samo asali daga ƴan milimita zuwa 6-inch, 8-inch, har ma da girma 12-inch girma. Babban diamita SiC lu'ulu'u yana haɓaka haɓakar samarwa, rage farashi, da biyan buƙatun na'urori masu ƙarfi.
2. Babban Ingantacciyar Girma
   Lu'ulu'u ɗaya na SiC masu inganci suna da mahimmanci ga na'urori masu ƙarfi. Kodayake an sami ci gaba mai mahimmanci, lahani irin su micropipes, rarrabuwa, da ƙazanta har yanzu suna wanzu, suna shafar aikin na'urar da amincin.
3. Rage Kuɗi
   Babban farashi na shirye-shiryen crystal na SiC yana iyakance aikace-aikacen sa a wasu fannoni. Haɓaka hanyoyin haɓaka haɓaka, haɓaka haɓakar samarwa, da rage farashin albarkatun ƙasa na iya taimakawa rage farashin samarwa.
4. Ci gaban Hankali
   Tare da ci gaba a cikin AI da manyan bayanai, fasahar haɓaka kristal SiC za ta ƙara ɗaukar mafita na hankali. Kulawa na ainihi da sarrafawa ta amfani da na'urori masu auna firikwensin da tsarin sarrafa kansa zai haɓaka kwanciyar hankali da sarrafawa. Bugu da ƙari, manyan ƙididdigar bayanai na iya haɓaka sigogin girma, haɓaka ingancin crystal da ingantaccen samarwa.

Ingantattun fasahar shirye-shiryen kristal guda ɗaya na silicon carbide shine mabuɗin mayar da hankali a cikin binciken kayan semiconductor. Kamar yadda fasaha ta ci gaba, dabarun ci gaban kristal na SiC za su ci gaba da haɓakawa, suna ba da tushe mai ƙarfi don aikace-aikace a cikin yanayin zafi, mai girma, da manyan iko.