1. Gabatarwa
Duk da shekarun da suka gabata na bincike, heteroepitaxial 3C-SiC wanda aka girma akan siliki ba tukuna ya sami isassun ingancin kristal don aikace-aikacen lantarki na masana'antu. Yawanci ana yin girma akan Si(100) ko Si(111) substrates, kowanne yana gabatar da ƙalubale daban-daban: yankunan anti-lokaci don (100) da fashe don (111). Yayin da [111]-fina-finan da suka dace suna nuna halaye masu ban sha'awa kamar su rage yawan lahani, ingantaccen tsarin halittar jiki, da ƙananan damuwa, madadin daidaitawa kamar (110) da (211) ba a yi karatu ba. Bayanan da suka wanzu suna ba da shawarar cewa mafi kyawun yanayin girma na iya zama takamaiman-daidaitacce, mai rikitarwa bincike na tsari. Musamman ma, yin amfani da mafi girma-Miller-index Si substrates (misali, (311), (510)) don 3C-SiC heteroepitaxy ba a taɓa ba da rahoto ba, yana barin babban ɗaki don binciken bincike kan hanyoyin haɓaka masu dogaro da kai.
2. Gwaji
An adana yadudduka na 3C-SiC ta hanyar yanayin tururin tururi na yanayi (CVD) ta amfani da iskar gas na SiH4/C3H8/H2. Tushen sun kasance 1 cm² Si wafers tare da daidaitawa iri-iri: (100), (111), (110), (211), (311), (331), (510), (553), da (995). Duk abubuwan da ake amfani da su suna kan-axis ban da (100), inda aka kuma gwada wafer 2° da aka yanke. Pre-girma tsaftacewa hannu ultrasonic degreasing a methanol. Ka'idar girma ta ƙunshi cirewar oxide na asali ta hanyar H2 annealing a 1000 ° C, biye da daidaitattun matakai guda biyu: carburization na minti 10 a 1165 ° C tare da 12 sccm C3H8, sa'an nan kuma epitaxy na minti 60 a 1350 ° C (C / Si) rabo = 5 sc. Kowane gudu na haɓaka ya haɗa da daidaitawar Si huɗu zuwa biyar daban-daban, tare da aƙalla wafer (100).
3. Sakamako da Tattaunawa
Halin ilimin halittar jiki na 3C-SiC yadudduka da aka girma akan nau'ikan sifofin Si daban-daban (Fig. 1) ya nuna fassarori daban-daban da roughness. A gani, samfurori da aka girma akan Si (100), (211), (311), (553), da (995) sun bayyana kamar madubi, yayin da wasu sun kasance daga madara ((331), (510)) zuwa maras kyau ((110), (111)). Mafi santsi (yana nuna mafi kyawun microstructure) an samo su akan (100) 2° kashe da (995) substrates. Abin sha'awa, duk yadudduka sun kasance marasa fashe bayan sanyaya, gami da yawanci mai saurin damuwa 3C-SiC(111). Ƙayyadadden girman samfurin ƙila ya hana fashewa, kodayake wasu samfuran sun nuna ruku'u (30-60 μm karkata daga tsakiya zuwa gefe) ana iya gano su a ƙarƙashin microscopy na gani a 1000 × haɓakawa saboda tarin damuwa na thermal. Yadudduka masu ruku'u da yawa waɗanda aka girma akan Si(111), (211), da (553) guraben gyare-gyare sun nuna sifofi masu ɓarke da ke nuna nau'in juzu'i, suna buƙatar ƙarin gwaji da aikin ƙa'idar don daidaitawa tare da daidaitawar crystallographic.
Hoto na 1 yana taƙaita sakamakon XRD da AFM (bincike a 20 × 20 μ m2) sakamakon matakan 3C-SC da aka girma akan Si substrates tare da daidaitawa daban-daban.
Hotunan Hotuna na Ƙarfin Atom (AFM) (Fig. 2) ingantattun abubuwan lura na gani. Ƙimar tushen-ma'ana-square (RMS) sun tabbatar da mafi santsi a kan (100) 2° kashe da (995) ma'auni, yana nuna sifofi irin na hatsi tare da girman 400-800 nm na gefe. Layin (110) wanda ya girma shine mafi ƙanƙanta, yayin da elongated da/ko siffofi masu kama da juna tare da iyakoki na lokaci-lokaci sun bayyana a cikin wasu hanyoyin ((331), (510)). Diffraction X-ray (XRD) θ-2θ (wanda aka taƙaita a cikin Teburin 1) ya nuna nasarar heteroepitaxy don ƙananan ƙananan-Miller-index, sai dai Si (110) wanda ya nuna gauraye 3C-SiC (111) da (110) kololuwa suna nuna polycrystallinity. An ba da rahoton wannan haɗakarwa a baya don Si(110), kodayake wasu binciken sun lura da keɓancewar (111) 3C-SiC, yana ba da shawarar haɓaka yanayin haɓaka yana da mahimmanci. Don fihirisar Miller ≥5 ((510), (553), (995)), ba a gano kololuwar XRD a daidaitaccen tsarin θ-2θ ba tunda waɗannan manyan jiragen sama ba su da bambanci a cikin wannan lissafi. Rashin ƙananan ƙananan 3C-SiC kololuwa (misali, (111), (200)) yana nuna ci gaban-crystalline guda ɗaya, yana buƙatar karkatar da samfurin don gano rarrabuwa daga ƙananan jiragen sama.
Hoto 2 yana nuna lissafin kusurwar jirgin sama a cikin tsarin crystal CFC.
Ƙididdigar ƙididdiga na ƙididdiga tsakanin manyan ƙananan jiragen sama da ƙananan ƙananan jiragen sama (Table 2) sun nuna manyan ɓarna (> 10 °), suna bayanin rashin su a cikin daidaitattun θ-2θ. Saboda haka an gudanar da nazarin adadi na sandar sanda a kan samfurin (995) wanda ya dace saboda yanayin yanayin halittarsa wanda ba a saba gani ba (mai yiwuwa daga ci gaban shafi ko tagwaye) da ƙarancin rashin ƙarfi. Figures na (111) na sanda (Fig. 3) daga Si substrate da 3C-SiC Layer sun kusan zama iri ɗaya, suna tabbatar da ci gaban epitaxial ba tare da tagwaye ba. Tabo ta tsakiya ya bayyana a χ≈15°, yayi daidai da ka'idar (111)-(995) kwana. Tabobi guda uku masu daidai da sun bayyana a wuraren da ake tsammanin (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° da 33.6°), ko da yake raunin da ba a annabta ba a χ=62°/φ=93.3° yana bukatar karin bincike. Ingancin crystalline, wanda aka tantance ta hanyar faɗin tabo a cikin φ-scans, yana bayyana mai ban sha'awa, kodayake ana buƙatar ma'aunin lanƙwasa don ƙididdigewa. Ƙididdigar igiyoyi na (510) da (553) samfurori sun rage don kammala don tabbatar da yanayin da ake zaton su na epitaxial.
Hoto 3 yana nuna hoton kololuwar XRD da aka rubuta akan samfurin daidaitacce (995), wanda ke nuna (111) jirage na Si substrate (a) da 3C-SiC Layer (b).
4. Kammalawa
Ci gaban Heteroepitaxial 3C-SiC ya yi nasara akan mafi yawan matakan Si ban da (110), wanda ya haifar da kayan polycrystalline. Si (100) 2 ° kashe da (995) substrates sun samar da mafi kyawun yadudduka (RMS <1 nm), yayin da (111), (211), da (553) suka nuna babbar ruku'u (30-60 μm). Maɗaukakin maɗaukakin maɗaukaki yana buƙatar haɓaka halayen XRD (misali, alkaluman sandar sanda) don tabbatar da epitaxy saboda rashin kololuwar θ-2θ. Ayyukan da ke ci gaba sun haɗa da ma'aunin lanƙwasa, nazarin damuwa na Raman, da faɗaɗa zuwa ƙarin madaidaitan madaidaitan bayanai don kammala wannan binciken.
A matsayin masana'anta da aka haɗa a tsaye, XKH yana ba da sabis na ƙwararrun ƙwararrun sarrafawa tare da cikakkiyar fayil na silin carbide substrates, yana ba da daidaitattun nau'ikan nau'ikan nau'ikan 4H / 6H-N, 4H-Semi, 4H / 6H-P, da 3C-SiC, ana samun su a cikin diamita daga 2-inch zuwa 12-inch. Ƙwararrun mu na ƙarshen-zuwa-ƙarshe a cikin haɓakar kristal, ingantattun mashina, da tabbatar da inganci yana tabbatar da ingantattun hanyoyin magance wutar lantarki, RF, da aikace-aikace masu tasowa.
Lokacin aikawa: Agusta-08-2025