1. Gabatarwa
Duk da shekaru da dama na bincike, heteroepitaxial 3C-SiC da aka noma a kan silicon substrates bai cimma isasshen ingancin lu'ulu'u ba tukuna don aikace-aikacen lantarki na masana'antu. Yawanci ana yin girma akan Si(100) ko Si(111) substrates, kowannensu yana gabatar da ƙalubale daban-daban: yankunan anti-phase don (100) da fashewa don (111). Duk da cewa fina-finan da aka mayar da hankali kan [111] suna nuna halaye masu kyau kamar rage yawan lahani, ingantaccen yanayin saman, da ƙarancin damuwa, ba a yi nazarin wasu hanyoyin ba kamar (110) da (211). Bayanan da ke akwai sun nuna cewa yanayin girma mafi kyau na iya zama na musamman ga al'ada, wanda ke rikitar da bincike na tsari. Abin lura shi ne, ba a taɓa bayar da rahoton amfani da manyan nau'ikan Si na Miller-index (misali, (311), (510)) don heteroepitaxy na 3C-SiC ba, wanda ke barin babban sarari don binciken bincike kan hanyoyin girma da suka dogara da al'ada.
2. Gwaji
An ajiye layukan 3C-SiC ta hanyar ajiyar tururin sinadarai masu matsin lamba a yanayi (CVD) ta amfani da iskar gas mai suna SiH4/C3H8/H2. Substrates ɗin sune wafers Si cm² 1 tare da hanyoyi daban-daban: (100), (111), (110), (211), (311), (331), (510), (553), da (995). Duk substrates suna kan-axis sai dai (100), inda aka ƙara gwada wafers ɗin da aka yanke 2°. Tsaftace kafin girma ya haɗa da rage mai a cikin methanol. Tsarin girma ya ƙunshi cire oxide na asali ta hanyar annealing H2 a 1000°C, sannan aka bi tsarin matakai biyu na yau da kullun: carburization na minti 10 a 1165°C tare da 12 sccm C3H8, sannan epitaxy na minti 60 a 1350°C (rabo na C/Si = 4) ta amfani da 1.5 sccm SiH4 da 2 sccm C3H8. Kowace ci gaban da aka samu ya ƙunshi nau'ikan Si guda huɗu zuwa biyar daban-daban, tare da aƙalla wafer ɗaya (100) na tunani.
3. Sakamako da Tattaunawa
Siffar yadudduka na 3C-SiC da aka shuka a kan nau'ikan Si (Hoto na 1) ta nuna siffofi daban-daban na saman da kuma kauri. A gani, samfuran da aka shuka a kan Si(100), (211), (311), (553), da (995) sun yi kama da madubi, yayin da wasu suka kama daga mai madara ((331), (510)) zuwa mara laushi ((110), (111)). An samo saman da suka fi santsi (wanda ke nuna mafi kyawun tsarin) a kan (100)2° kashe da (995) substrates. Abin mamaki, duk yadudduka sun kasance ba su da tsagewa bayan sanyaya, gami da 3C-SiC(111) mai yawan kamuwa da damuwa. Iyakar girman samfurin na iya hana tsagewa, kodayake wasu samfuran sun nuna sunkuya (30-60 μm karkacewa daga tsakiya zuwa gefe) wanda za a iya gano shi a ƙarƙashin na'urar hangen nesa a girman 1000 × saboda matsin lamba mai tarin zafi. Layukan da aka yi wa ado da yawa a kan Si(111), (211), da (553) sun nuna siffofi masu siffar kunkuntar da ke nuna nau'in tensile, wanda ke buƙatar ƙarin aikin gwaji da na ka'ida don daidaitawa da yanayin kristal.
Siffa ta 1 ta taƙaita sakamakon XRD da AFM (ana duba su a 20×20 μ m2) na yadudduka 3C-SC da aka girma akan substrates Si tare da yanayi daban-daban.
Hotunan na'urar hangen nesa ta ƙarfin atomic (AFM) (Hoto na 2) sun tabbatar da abubuwan da aka lura da su. Ƙimar tushen-matsakaicin murabba'i (RMS) ta tabbatar da mafi santsi a saman (100)2° a ƙasa da (995) substrates, suna nuna tsarin kamar hatsi tare da girman gefe na 400-800 nm. Layer ɗin da aka girma (110) shine mafi tsauri, yayin da siffofi masu tsayi da/ko masu kama da juna tare da iyakoki masu kaifi lokaci-lokaci suka bayyana a wasu yanayin ((331), (510)). Binciken X-ray diffraction (XRD) θ-2θ (wanda aka taƙaita a cikin Tebur 1) ya nuna nasarar heteroepitaxy don ƙananan substrates na Miller, banda Si(110) wanda ya nuna gaurayen kololuwar 3C-SiC(111) da (110) waɗanda ke nuna polycrystallinity. An riga an ruwaito wannan haɗin kai na Si(110), kodayake wasu bincike sun lura da 3C-SiC na musamman (111) wanda ke da alaƙa da shi, yana nuna cewa inganta yanayin girma yana da mahimmanci. Ga ma'aunin Miller ≥5 ((510), (553), (995)), ba a gano kololuwar XRD a cikin tsarin θ-2θ na yau da kullun ba tunda waɗannan manyan ma'aunin ba su da bambanci a cikin wannan tsarin. Rashin ƙananan kololuwar 3C-SiC (misali, (111), (200)) yana nuna ci gaban lu'ulu'u ɗaya, yana buƙatar karkatar da samfurin don gano bambance-bambance daga ƙananan ma'aunin.
Siffa ta 2 tana nuna lissafin kusurwar jirgin sama a cikin tsarin lu'ulu'u na CFC.
Kusurwoyin kristal da aka ƙididdige tsakanin manyan fihirisa da ƙananan fihirisa (Tebur 2) sun nuna manyan karkacewa (>10°), suna bayyana rashinsu a cikin sikanin θ-2θ na yau da kullun. Saboda haka, an gudanar da nazarin siffar sandar akan samfurin (995) mai daidaitawa saboda yanayin granular da ba a saba gani ba (mai yiwuwa daga girma na ginshiƙi ko tagwaye) da ƙarancin kauri. Siffofin sandar (111) (Hoto na 3) daga substrate Si da Layer 3C-SiC kusan iri ɗaya ne, suna tabbatar da ci gaban epitaxial ba tare da tagwaye ba. Wurin tsakiya ya bayyana a χ≈15°, wanda ya dace da kusurwar ka'ida (111)-(995). Wurare uku masu daidaito-daidaitawa sun bayyana a wurare da ake tsammani (χ=56.2°/φ=269.4°, χ=79°/φ=146.7° da 33.6°), kodayake wani wuri mai rauni da ba a annabta ba a χ=62°/φ=93.3° yana buƙatar ƙarin bincike. Ingancin lu'ulu'u, wanda aka kimanta ta hanyar faɗin tabo a cikin φ-scans, ya bayyana mai kyau, kodayake ana buƙatar ma'aunin lanƙwasa mai girgiza don ƙididdigewa. Har yanzu ana ci gaba da kammala alkaluman sandunan (510) da (553) don tabbatar da yanayin da ake tsammani na epitaxial.
Siffa ta 3 ta nuna zane-zanen kololuwar XRD da aka rubuta akan samfurin da aka daidaita (995), wanda ke nuna layukan (111) na substrate Si (a) da Layer 3C-SiC (b).
4. Kammalawa
Girman Heteroepitaxial 3C-SiC ya yi nasara a kan yawancin hanyoyin Si banda (110), wanda ya samar da kayan polycrystalline. Si(100)2° a kashe kuma (995) substrates sun samar da mafi santsi yadudduka (RMS <1 nm), yayin da (111), (211), da (553) sun nuna sunkuyar da kai mai mahimmanci (30-60 μm). Substrates masu girman index suna buƙatar ingantaccen halayyar XRD (misali, alkaluman sanduna) don tabbatar da epitaxy saboda rashin kololuwar θ-2θ. Aikin da ake ci gaba da yi ya haɗa da ma'aunin lanƙwasa mai girgiza, nazarin damuwa na Raman, da faɗaɗawa zuwa ƙarin hanyoyin babban index don kammala wannan binciken bincike.
A matsayinta na masana'anta mai haɗakarwa a tsaye, XKH tana ba da ayyukan sarrafawa na ƙwararru tare da cikakken fayil na abubuwan silicon carbide, suna ba da nau'ikan daidaitattun da na musamman waɗanda suka haɗa da 4H/6H-N, 4H-Semi, 4H/6H-P, da 3C-SiC, waɗanda ake samu a diamita daga inci 2 zuwa inci 12. Ƙwarewarmu ta ƙarshe zuwa ƙarshe a cikin haɓakar lu'ulu'u, injinan daidaito, da tabbatar da inganci suna tabbatar da mafita na musamman don na'urorin lantarki masu amfani da wutar lantarki, RF, da aikace-aikacen da ke tasowa.
Lokacin Saƙo: Agusta-08-2025