Kayayyakin Semiconductor sun samo asali ne ta hanyar tsararraki uku masu canzawa:
1st Gen (Si/Ge) ya aza harsashin samar da kayan lantarki na zamani.
Na 2nd Gen (GaAs/InP) ya karya ta hanyar optoelectronic da shinge mai tsayi don ikon juyin juya halin bayanai,
3rd Gen (SiC/GaN) yanzu yana magance makamashi da ƙalubalen muhalli, yana ba da damar tsaka tsaki na carbon da zamanin 6G.
Wannan ci gaban yana bayyana canjin yanayi daga iyawa zuwa ƙwarewa a kimiyyar abin duniya.
1. Semiconductors na Farko: Silicon (Si) da Germanium (Ge)
Bayanan Tarihi
A cikin 1947, Bell Labs ya ƙirƙira transistor germanium, wanda ke nuna alfijir na zamanin semiconductor. A cikin shekarun 1950s, a hankali silicon ya maye gurbin germanium a matsayin kafuwar hadedde da'irori (ICs) saboda bargawar oxide Layer (SiO₂) da kuma yawan tanadin halitta.
Kayayyakin Kayayyaki
ⅠBandgap:
Germanium: 0.67eV (ƙunƙuntaccen bandgap, mai yuwuwa zuwa yoyon halin yanzu, rashin kyawun yanayin zafi).
Silicon: 1.12eV (bandgap kai tsaye, wanda ya dace da da'irar dabaru amma ba zai iya fitar da haske ba).
Ⅱ,Amfanin Silicon:
A zahiri yana samar da oxide mai inganci (SiO₂), yana ba da damar ƙirƙira MOSFET.
Low cost da ƙasa-yawan (~ 28% na crustal abun da ke ciki).
Ⅲ,Iyakoki:
Ƙananan motsi na lantarki (kawai 1500 cm²/(V·s)), yana iyakance aikin mitoci mai girma.
Rashin ƙarfin lantarki / haƙurin zafin jiki (mafi yawan zafin aiki. ~ 150 ° C).
Maɓallin Aikace-aikace
Ⅰ,Haɗin kai (ICs):
CPUs, guntuwar ƙwaƙwalwar ajiya (misali, DRAM, NAND) sun dogara da silicon don girman haɗin kai.
Misali: Intel's 4004 (1971), microprocessor na farko na kasuwanci, yayi amfani da fasahar silicon 10μm.
Ⅱ,Na'urorin Wutar Lantarki:
Thyristors na farko da MOSFETs masu ƙarancin wuta (misali, kayan wutar lantarki na PC) sun kasance tushen silicon.
Kalubale & Yashewa
An cire Germanium saboda yatsa da rashin kwanciyar hankali. Koyaya, iyakancewar silicon a cikin optoelectronics da aikace-aikacen ƙarfi mai ƙarfi sun haɓaka haɓakar semiconductor na gaba.
2 Semiconductors na ƙarni na biyu: Gallium Arsenide (GaAs) da Indium Phosphide (InP)
Fagen Ci Gaba
A cikin 1970s-1980s, filaye masu tasowa kamar sadarwar wayar hannu, hanyoyin sadarwa na fiber na gani, da fasahar tauraron dan adam sun haifar da buƙatu mai mahimmanci da ingantaccen kayan optoelectronic. Wannan ya haifar da ci gaban na'urori masu sarrafa bandgap kai tsaye kamar GaAs da InP.
Kayayyakin Kayayyaki
Bandgap & Ayyukan Optoelectronic:
GaAs: 1.42eV (bandgap kai tsaye, yana ba da damar fitar da haske-mai kyau ga lasers/LEDs).
InP: 1.34eV (mafi dacewa don aikace-aikacen tsayi mai tsayi, misali, 1550nm fiber-optic sadarwa).
Motsin Wutar Lantarki:
GaAs ya cimma 8500 cm²/(V·s), wanda ya zarce silicon (1500 cm²/(V·s)), yana mai da shi mafi kyawu don sarrafa siginar kewayon GHz.
Rashin amfani
lBrittle substrates: Ya fi wuya a yi fiye da silicon; GaAs wafers farashin 10 × ƙari.
lBabu oxide na asali: Ba kamar SiO₂ na silicon, GaAs/InP ba su da tsayayyen oxides, yana hana ƙirƙirar IC mai girma.
Maɓallin Aikace-aikace
lRF Gaba-Ƙarshen:
Ƙarfin wutar lantarki ta hannu (PAs), masu ɗaukar tauraron dan adam (misali, transistor HEMT na tushen GaAs).
lOptoelectronics:
Laser diodes (CD/DVD drives), LEDs (ja / infrared), fiber-optic modules (InP Laser).
lKwayoyin Rana na Sararin Samaniya:
Kwayoyin GaAs sun sami nasarar 30% (vs. ~ 20% don silicon), mahimmanci ga tauraron dan adam.
lGilashin Fasaha
Babban farashi yana iyakance GaAs/InP zuwa manyan aikace-aikace na ƙarshe, yana hana su maye gurbin ikon silicon a cikin kwakwalwan kwamfuta.
Semiconductors na ƙarni na uku (Na'urori masu fa'ida-Bandgap): Silicon Carbide (SiC) da Gallium Nitride (GaN)
Direbobin Fasaha
Juyin juya halin Makamashi: Motocin lantarki da haɗin gwiwar grid makamashi mai sabuntawa suna buƙatar ingantattun na'urorin wuta.
Bukatun Maɗaukaki: 5G sadarwa da tsarin radar suna buƙatar mafi girman mitoci da ƙarfin ƙarfi.
Matsanancin Muhalli: sararin samaniya da aikace-aikacen injin masana'antu suna buƙatar kayan da za su iya jure yanayin zafi sama da 200°C.
Halayen Material
Fa'idodin Bandgap:
lSiC: Bandgap na 3.26eV, rushewar ƙarfin filin lantarki 10 × na silicon, mai iya jurewa ƙarfin lantarki akan 10kV.
lGaN: Bandgap na 3.4eV, motsin lantarki na 2200 cm²/(V·s), yayi fice a cikin babban aiki mai girma.
Gudanar da thermal:
SiC's thermal conductivity ya kai 4.9 W / (cm · K), sau uku fiye da silicon, yana mai da shi manufa don aikace-aikace masu ƙarfi.
Kalubalen kayan aiki
SiC: Slow ci gaban-crystal guda ɗaya yana buƙatar yanayin zafi sama da 2000 ° C, yana haifar da lahani na wafer da tsada mai tsada (wani 6-inch SiC wafer shine 20 × ya fi siliki tsada).
GaN: Ba shi da wani abu na halitta, galibi yana buƙatar heteroepitaxy akan sapphire, SiC, ko silicon substrates, yana haifar da matsalolin rashin daidaituwar lattice.
Maɓallin Aikace-aikace
Wutar Lantarki:
EV inverters (misali, Tesla Model 3 yana amfani da SiC MOSFETs, yana haɓaka aiki da 5-10%).
Tashoshin caji mai sauri/masu adaftan (na'urorin GaN suna ba da damar 100W+ caji cikin sauri yayin rage girman da 50%).
Na'urorin RF:
5G tushe ikon amplifiers (GaN-on-SiC PAs suna goyan bayan mitocin mmWave).
Radar soja (GaN yana ba da 5 × ƙarfin ƙarfin GaAs).
Optoelectronics:
UV LEDs (kayan AlGaN da aka yi amfani da su a cikin haifuwa da gano ingancin ruwa).
Matsayin Masana'antu da Hannun Gaba
SiC ta mamaye kasuwa mai karfin gaske, tare da na'urori masu daraja ta mota tuni suna samarwa da yawa, kodayake farashin ya kasance mai shinge.
GaN yana haɓaka cikin sauri a cikin kayan lantarki na mabukaci (cajin sauri) da aikace-aikacen RF, yana canzawa zuwa wafers 8-inch.
Abubuwan da ke fitowa kamar gallium oxide (Ga₂O₃, bandgap 4.8eV) da lu'u-lu'u (5.5eV) na iya samar da "ƙarni na huɗu" na semiconductor, tura iyakar ƙarfin lantarki fiye da 20kV.
Kasancewa tare da Haɗin kai na Ƙungiyoyin Semiconductor
Ƙarfafawa, Ba Sauyawa ba:
Silicon ya kasance babba a cikin kwakwalwan kwamfuta da na'urorin lantarki (95% na kasuwar semiconductor na duniya).
GaAs da InP sun ƙware a babban mitoci da niches na optoelectronic.
SiC/GaN ba za a iya maye gurbinsu da makamashi da aikace-aikacen masana'antu ba.
Misalan Haɗin Fasaha:
GaN-on-Si: Haɗa GaN tare da ƙananan siliki mai rahusa don caji mai sauri da aikace-aikacen RF.
SiC-IGBT na'urorin haɗin gwiwar: Inganta ingantaccen jujjuyawar grid.
Yanayin Gaba:
Haɗin kai dabam dabam: Haɗa kayan (misali, Si + GaN) akan guntu ɗaya don daidaita aiki da farashi.
Kayayyakin bandgap mai fa'ida (misali, Ga₂O₃, lu'u-lu'u) na iya ba da damar yin amfani da babban ƙarfin lantarki (> 20kV) da aikace-aikacen lissafin ƙididdigewa.
Samar da alaƙa
GaAs Laser epitaxial wafer 4 inch 6 inch
12 inch SIC substrate silicon carbide Firayim diamita 300mm babban girman 4H-N Ya dace da zubar da zafi na na'urar wuta mai ƙarfi
Lokacin aikawa: Mayu-07-2025