An raba sinadarin silicon carbide zuwa nau'in semi-insulating da nau'in conductive. A halin yanzu, babban ƙayyadaddun kayan silicon carbide mai semi-insulating shine inci 4. A kasuwar silicon carbide mai conductive, ƙayyadaddun samfuran substrate na yanzu shine inci 6.
Saboda aikace-aikacen da ke ƙasa a cikin filin RF, ƙananan SiC da kayan epitaxial suna ƙarƙashin ikon fitarwa ta Ma'aikatar Kasuwanci ta Amurka. SiC mai rufi a matsayin substrate shine kayan da aka fi so don GaN heteroepitaxy kuma yana da mahimman damar amfani a cikin filin microwave. Idan aka kwatanta da rashin daidaiton lu'ulu'u na sapphire 14% da Si 16.9%, rashin daidaiton lu'ulu'u na kayan SiC da GaN shine kawai 3.4%. Idan aka haɗa shi da yanayin zafi mai yawa na SiC, LED mai inganci da ƙarfin kuzari da na'urorin microwave masu ƙarfi na GaN waɗanda aka shirya ta hanyarsu suna da manyan fa'idodi a cikin radar, kayan microwave masu ƙarfi da tsarin sadarwa na 5G.
Bincike da haɓaka substrate na SiC mai rufi da rabin rufi koyaushe shine babban abin da bincike da haɓaka substrate na siC mai rufi da silinda ɗaya ke mayar da hankali a kai. Akwai manyan matsaloli guda biyu wajen noman kayan SiC mai rufi da rabin rufi:
1) Rage ƙazantar mai bayarwa ta hanyar amfani da graphite crucible, shaƙar iskar thermal insulation da kuma yin amfani da foda.
2) Yayin da ake tabbatar da inganci da halayen lantarki na lu'ulu'u, ana shigar da cibiyar zurfi don rama sauran ƙazanta marasa zurfi ta hanyar amfani da wutar lantarki.
A halin yanzu, masana'antun da ke da ƙarfin samar da SiC mai rufi sune SICC Co，Semic Crystal Co，Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Ana samun lu'ulu'u mai sarrafa siC ta hanyar allurar nitrogen a cikin yanayin da ke tsiro. Ana amfani da substrate mai sarrafa silica carbide wajen kera na'urorin wutar lantarki, na'urorin wutar lantarki na silicon carbide masu ƙarfin lantarki, babban wutar lantarki, babban zafin jiki, yawan amfani, ƙarancin asara da sauran fa'idodi na musamman, zai inganta amfani da na'urorin wutar lantarki da ke dogara da silicon yadda ake canza makamashi, yana da tasiri mai mahimmanci a fannin ingantaccen canza makamashi. Manyan wuraren amfani sune motocin lantarki/tushen caji, sabon makamashi na photovoltaic, jigilar jirgin ƙasa, grid mai wayo da sauransu. Saboda abubuwan da ke haifar da samfuran mai sarrafawa galibi na'urorin wutar lantarki ne a cikin motocin lantarki, na'urorin wutar lantarki da sauran fannoni, damar amfani da su ta faɗaɗa, kuma masana'antun sun fi yawa.
Nau'in lu'ulu'u na silicon carbide: Tsarin da aka saba da shi na mafi kyawun lu'ulu'u na silicon carbide na 4H za a iya raba shi zuwa rukuni biyu, ɗaya shine lu'ulu'u na silicon carbide na tsarin sphalerite, wanda aka sani da 3C-SiC ko β-SiC, ɗayan kuma shine tsarin hexagonal ko lu'u-lu'u na babban tsarin lokaci, wanda yake kama da 6H-SiC, 4H-sic, 15R-SiC, da sauransu, waɗanda aka sani da α-SiC gaba ɗaya. 3C-SiC yana da fa'idar juriya mai yawa a cikin na'urorin kera. Duk da haka, babban rashin daidaito tsakanin madaidaitan lattice na Si da SiC da ma'aunin faɗaɗa zafi na iya haifar da adadi mai yawa na lahani a cikin layin epitaxial na 3C-SiC. 4H-SiC yana da babban damar kera MOSFETs, saboda tsarin girman kristal da kuma girman Layer na epitaxial sun fi kyau, kuma dangane da motsi na lantarki, 4H-SiC ya fi 3C-SiC da 6H-SiC girma, yana samar da ingantattun halaye na microwave ga 4H-SiC MOSFETs.
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Lokacin Saƙo: Yuli-16-2024