Silicon carbide substrate ya kasu kashi Semi-insulating nau'in da conductive irin. A halin yanzu, ƙayyadaddun ƙayyadaddun ƙayyadaddun samfuran samfuran siliki-carbide mai sikandire mai ƙarancin inci 4 ne. A cikin kasuwar siliki carbide mai gudanarwa, ƙayyadaddun samfur na yau da kullun na yau da kullun shine inci 6.
Saboda aikace-aikacen da ke ƙasa a cikin filin RF, SiC substrates da kayan epitaxial suna ƙarƙashin ikon sarrafa fitarwa ta Ma'aikatar Kasuwancin Amurka. Semi-insulated SiC as substrate shine kayan da aka fi so don GaN heteroepitaxy kuma yana da mahimman abubuwan aikace-aikacen a filin microwave. Idan aka kwatanta da kristal rashin daidaituwa na sapphire 14% da Si 16.9%, rashin daidaituwar crystal na kayan SiC da GaN shine kawai 3.4%. Haɗe-haɗe tare da ultra-high thermal conductivity na SiC, Babban ƙarfin wutar lantarki LED da GaN babban mita da manyan na'urorin microwave da aka shirya ta hanyarsa suna da fa'ida sosai a cikin radar, kayan aikin microwave mai ƙarfi da tsarin sadarwa na 5G.
Bincike da ci gaban SiC substrate da aka keɓe shi koyaushe ya kasance abin da aka fi mayar da hankali kan bincike da haɓaka simin kristal guda ɗaya na SiC. Akwai manyan matsaloli guda biyu a cikin haɓaka kayan SiC da aka rufe da su:
1) Rage ƙazantattun masu ba da gudummawar da aka gabatar ta hanyar graphite crucible, adsorption na thermal insulation da doping a cikin foda;
2) Yayin da tabbatar da inganci da kaddarorin lantarki na crystal, an gabatar da cibiyar matakin zurfi don rama ƙarancin ƙarancin matakin ƙazanta tare da aikin lantarki.
A halin yanzu, masana'antun da Semi-insulated SiC samar iya aiki ne yafi SICC Co, Semic Crystal Co, Tanke Blue Co, Hebei Synlight Crystal Co., Ltd.
Ana samun kristal SiC mai gudanarwa ta hanyar allurar nitrogen cikin yanayin girma. Conductive silicon carbide substrate aka yafi amfani da samar da wutar lantarki na'urorin, silicon carbide ikon na'urorin tare da high ƙarfin lantarki, high halin yanzu, high zazzabi, high mita, low asara da sauran musamman abũbuwan amfãni, zai ƙwarai inganta data kasance amfani da silicon tushen ikon na'urorin makamashi. ingantaccen juzu'i, yana da tasiri mai mahimmanci kuma mai nisa a fagen ingantaccen canjin makamashi. Babban wuraren aikace-aikacen sune motocin lantarki / cajin caji, sabon makamashi na hoto, jigilar jirgin ƙasa, grid mai hankali da sauransu. Saboda abubuwan da ke ƙasa na samfuran sarrafawa galibi na'urorin wuta ne a cikin motocin lantarki, na'urar daukar hoto da sauran filayen, tsammanin aikace-aikacen ya fi girma, kuma masana'anta sun fi yawa.
Silicon carbide crystal nau'in: Ainihin tsarin na mafi kyau 4H crystalline silicon carbide za a iya raba kashi biyu, daya ne cubic silicon carbide crystal irin sphalerite tsarin, da aka sani da 3C-SiC ko β-SiC, da kuma sauran shi ne hexagonal. ko tsarin lu'u-lu'u na babban tsarin lokaci, wanda shine na al'ada na 6H-SiC, 4H-sic, 15R-SiC, da dai sauransu, wanda aka fi sani da α-SiC. 3C-SiC yana da fa'idar high resistivity a masana'antu na'urorin. Koyaya, babban rashin daidaituwa tsakanin Si da SiC lattice akai-akai da haɓakar haɓakar thermal na iya haifar da lahani mai yawa a cikin 3C-SiC epitaxial Layer. 4H-SiC yana da babban yuwuwar a masana'antar MOSFETs, saboda haɓakar kristal da haɓaka haɓakar haɓakar Layer na epitaxial sun fi kyau, kuma dangane da motsi na lantarki, 4H-SiC ya fi 3C-SiC da 6H-SiC, yana ba da mafi kyawun halaye na microwave don 4H -SIC MOSFETs.
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Lokacin aikawa: Yuli-16-2024