Tukwanen silicon carbide mai tsafta (SiC) sun zama kayan aiki masu kyau ga muhimman abubuwan da ke cikin masana'antar semiconductor, sararin samaniya, da sinadarai saboda kyawun tasirinsu na zafi, kwanciyar hankali na sinadarai, da ƙarfin injina. Tare da ƙaruwar buƙatun na'urorin yumbu masu aiki da ƙarancin gurɓatawa, haɓaka fasahar shiri mai inganci da sassauƙa don tukwanen SiC masu tsafta ya zama abin da aka mayar da hankali a kai a duk duniya. Wannan takarda ta yi bitar manyan hanyoyin shiri na yanzu don tukwanen SiC masu tsafta, gami da sake yin amfani da sintering, sintering mara matsin lamba (PS), matsi mai zafi (HP), sintering na plasma mai walƙiya (SPS), da masana'antar ƙari (AM), tare da mai da hankali kan tattauna hanyoyin sintering, mahimman sigogi, halayen kayan aiki, da ƙalubalen da ake fuskanta na kowane tsari.
Aikace-aikacen yumbu na SiC a fannin soja da injiniyanci
A halin yanzu, ana amfani da sassan yumbu na SiC masu tsafta sosai a cikin kayan aikin kera silicon wafer, suna shiga cikin manyan ayyuka kamar oxidation, lithography, etching, da dasa ion. Tare da ci gaban fasahar wafer, ƙaruwar girman wafer ya zama babban yanayi. Girman wafer na yau da kullun shine 300 mm, wanda ya cimma daidaito mai kyau tsakanin farashi da ƙarfin samarwa. Duk da haka, bisa ga Dokar Moore, yawan samar da wafers na 450 mm ya riga ya kasance a cikin ajanda. Manyan wafers yawanci suna buƙatar ƙarfin tsari mafi girma don tsayayya da warping da deformation, wanda ke ƙara haifar da ƙaruwar buƙatar kayan aikin yumbu na SiC masu girma, masu ƙarfi, da tsafta. A cikin 'yan shekarun nan, kera ƙarin abubuwa (buga 3D), a matsayin fasahar samfuri mai sauri wanda ba ya buƙatar ƙira, ya nuna babban yuwuwar ƙera sassan yumbu na SiC masu rikitarwa saboda ginin Layer-by-Layer da ƙwarewar ƙira mai sassauƙa, yana jawo hankali ga jama'a.
Wannan takarda za ta yi nazari kan hanyoyin shiri guda biyar masu wakilci don tukwane masu tsarki na SiC - sake yin amfani da sintering, sintering mara matsi, matsewa mai zafi, sintering na plasma mai walƙiya, da ƙera ƙari - tare da mai da hankali kan hanyoyin sintering ɗinsu, dabarun inganta tsari, halayen aikin kayan aiki, da kuma damar amfani da masana'antu.
Bukatun kayan albarkatun ƙasa na silicon carbide masu tsarki
I. Sake ...
An sake yin amfani da silicon carbide mai sake yin amfani da shi (RSiC) wani abu ne mai tsarki na SiC wanda aka shirya ba tare da yin sintering ba a yanayin zafi mai zafi na 2100–2500°C. Tun lokacin da Fredriksson ya fara gano abin da ke faruwa a ƙarshen ƙarni na 19, RSiC ta sami kulawa sosai saboda iyakokin hatsi masu tsabta da rashin matakan gilashi da ƙazanta. A yanayin zafi mai yawa, SiC yana nuna matsin lamba mai yawa na tururi, kuma tsarin sintering ɗinsa ya ƙunshi tsarin ƙafewa da danshi: ƙananan hatsi suna ƙafewa kuma suna sake ajiyewa a saman manyan hatsi, suna haɓaka girman wuya da haɗin kai tsaye tsakanin hatsi, ta haka suna ƙara ƙarfin abu.
A shekarar 1990, Kriegesmann ya shirya RSiC tare da kauri na 79.1% ta amfani da zamewar siminti a 2200°C, inda sashin giciye ya nuna ƙaramin tsari wanda ya ƙunshi hatsi masu kauri da ramuka. Daga baya, Yi da abokan aikinsa sun yi amfani da simintin gel don shirya jikin kore kuma suka niƙa su a 2450°C, inda suka sami yumbun RSiC mai kauri na 2.53 g/cm³ da ƙarfin lanƙwasa na 55.4 MPa.
Faɗin karyewar SEM na RSiC
Idan aka kwatanta da SiC mai yawa, RSiC yana da ƙarancin yawa (kimanin 2.5 g/cm³) da kuma kusan kashi 20% na buɗaɗɗen porosity, wanda ke iyakance aikinsa a aikace-aikacen ƙarfi mai yawa. Saboda haka, inganta yawan yawa da halayen injiniya na RSiC ya zama babban abin da aka mayar da hankali a kai. Sung da abokan aikinsa sun ba da shawarar shigar da silicon mai narkewa cikin gaurayen carbon/β-SiC da sake sake yin amfani da shi a 2200°C, inda suka yi nasarar gina tsarin hanyar sadarwa wanda ya ƙunshi hatsi masu kauri na α-SiC. Sakamakon RSiC ya sami yawan 2.7 g/cm³ da ƙarfin lanƙwasa na 134 MPa, yana kiyaye kyakkyawan kwanciyar hankali na injiniya a yanayin zafi mai yawa.
Don ƙara haɓaka yawan amfani da sinadarai, Guo da abokan aikinsa sun yi amfani da fasahar shigar da sinadarai da kuma pyrolysis (PIP) don magance RSiC da yawa. Ta amfani da mafita na PCS/xylene da kuma SiC/PCS/xylene slurries a matsayin masu shiga, bayan zagayowar PIP sau 3-6, an inganta yawan RSiC sosai (har zuwa 2.90 g/cm³), tare da ƙarfin lanƙwasa. Bugu da ƙari, sun gabatar da dabarun zagaye waɗanda suka haɗa PIP da sake yin amfani da sinadarai: pyrolysis a 1400°C sannan sake yin amfani da sinadarai a 2400°C, suna share toshewar ƙwayoyin cuta yadda ya kamata da kuma rage porosity. Kayan RSiC na ƙarshe ya sami yawan amfani na 2.99 g/cm³ da ƙarfin lanƙwasa na 162.3 MPa, wanda ya nuna kyakkyawan aiki mai kyau.
Hotunan SEM na juyin halittar ƙananan tsarin RSiC mai gogewa bayan da aka yi amfani da polymer impregnation da pyrolysis (PIP)-recrystallization: RSiC na farko (A), bayan zagayowar PIP-recrystallization na farko (B), da kuma bayan zagaye na uku (C)
II. Sintering ba tare da matsin lamba ba
Ana yin amfani da yumbu mai simintin silicon carbide (SiC) wanda ba shi da matsi, yawanci ta amfani da foda SiC mai tsabta, mai ƙarfi a matsayin kayan aiki, tare da ƙara ƙananan adadin kayan aikin simintin, sannan a saka shi a cikin yanayi mara motsi ko injin tsabtace iska a 1800–2150°C. Wannan hanyar ta dace da samar da manyan sassan yumbu masu tsari mai rikitarwa. Duk da haka, tunda SiC galibi yana da alaƙa da juna, yawan watsawar sa yana da ƙasa sosai, wanda hakan ke sa yawan danshi ya yi wahala ba tare da kayan aikin simintin ba.
Dangane da tsarin sintering, sintering mara matsi za a iya raba shi zuwa rukuni biyu: sintering mara matsi-lokaci na ruwa (PLS-SiC) da sintering mara matsi-tsaki (PSS-SiC).
1.1 PLS-SiC (Sintering na Ruwa-Mataki)
Yawanci ana yin sintiri a ƙasa da 2000°C ta hanyar ƙara kusan 10 wt.% na kayan aikin sintiri na eutectic (kamar Al₂O₃, CaO, MgO, TiO₂, da kuma oxides masu ƙarancin ƙasa RE₂O₃) don samar da yanayin ruwa, yana haɓaka sake fasalin barbashi da canja wurin taro don cimma yawan yawa. Wannan tsari ya dace da tukwanen SiC na masana'antu, amma babu rahotannin cewa an sami SiC mai tsabta sosai ta hanyar sintiri na ruwa-lokaci.
1.2 PSS-SiC (Sintering Mai Sauƙi)
PSS-SiC ya ƙunshi yawan sinadarin solid-state a yanayin zafi sama da 2000°C tare da kimanin kashi 1% na ƙarin sinadarai. Wannan tsari ya dogara ne akan yaduwar atomic da sake fasalin hatsi wanda yanayin zafi mai yawa ke haifarwa don rage kuzarin saman da kuma cimma yawan sinadarai. Tsarin BC (boron-carbon) haɗin ƙari ne na gama gari, wanda zai iya rage ƙarfin iyaka na hatsi da kuma cire SiO₂ daga saman SiC. Duk da haka, ƙarin sinadarai na BC na gargajiya galibi suna gabatar da gurɓatattun abubuwa, suna rage tsarkin SiC.
Ta hanyar sarrafa abubuwan da aka ƙara (B 0.4 wt.%, C 1.8 wt.%) da kuma niƙawa a 2150°C na tsawon awanni 0.5, an sami tukwanen SiC masu tsarki mai yawan tsarki na 99.6 wt.% da kuma yawan da ya kai 98.4%. Tsarin ya nuna hatsin ginshiƙai (wasu sun wuce 450 µm a tsawon), tare da ƙananan ramuka a iyakokin hatsi da barbashi na graphite a cikin hatsi. Tukwanen sun nuna ƙarfin lanƙwasa na 443 ± 27 MPa, modulus mai laushi na 420 ± 1 GPa, da kuma ma'aunin faɗaɗa zafi na 3.84 × 10⁻⁶ K⁻¹ a cikin zafin ɗaki zuwa 600°C, wanda ke nuna kyakkyawan aiki gabaɗaya.
Tsarin PSS-SiC mai zurfi: (A) Hoton SEM bayan gogewa da kuma goge NaOH; (BD) Hotunan BSD bayan gogewa da gogewa
III. Yin Sintering Mai Zafi
Yin amfani da zafi wajen matsewa (HP) wata dabara ce ta yawan danshi wadda ke amfani da zafi da matsin lamba na uniaxial a lokaci guda ga kayan foda a ƙarƙashin yanayin zafi mai yawa da matsin lamba mai yawa. Babban matsin lamba yana hana samuwar ramuka sosai kuma yana iyakance girman hatsi, yayin da babban zafin jiki yana haɓaka haɗakar hatsi da samuwar gine-gine masu yawa, wanda a ƙarshe ke samar da yumbu SiC mai yawan yawa da tsarki. Saboda yanayin matsewa, wannan tsari yana haifar da anisotropy na hatsi, yana shafar halayen injiniya da lalacewa.
Tukwanen SiC masu tsarki suna da wahalar narkewa ba tare da ƙarin abubuwa ba, suna buƙatar yin sintering mai matsin lamba mai yawa. Nadeau da abokan aikinsa sun shirya SiC mai kauri sosai ba tare da ƙarin abubuwa a 2500°C da 5000 MPa ba cikin nasara; Sun da abokan aikinsa sun sami kayan β-SiC masu yawa tare da taurin Vickers har zuwa 41.5 GPa a 25 GPa da 1400°C. Ta amfani da matsin lamba 4 GPa, an shirya tukwanen SiC masu kauri kusan 98% da 99%, taurin 35 GPa, da kuma modulus mai laushi na 450 GPa a 1500°C da 1900°C, bi da bi. Foda SiC mai girman micron a 5 GPa da 1500°C sun samar da tukwanen da taurin 31.3 GPa da kuma kauri kusan 98.4%.
Duk da cewa waɗannan sakamakon sun nuna cewa matsin lamba mai yawa na iya samun yawan da ba a ƙara ba, sarkakiya da tsadar kayan aikin da ake buƙata suna iyakance aikace-aikacen masana'antu. Saboda haka, a cikin shirye-shiryen aiki, ana amfani da ƙarin abubuwa ko foda granulation sau da yawa don haɓaka ƙarfin sintering.
Ta hanyar ƙara phenolic resin 4 wt.% a matsayin ƙari da kuma yin sintering a 2350°C da 50 MPa, an sami tukwanen SiC masu yawan nitsewa na 92% da tsarki na 99.998%. Ta amfani da ƙarancin adadin ƙari (boric acid da D-fructose) da kuma sintering a 2050°C da 40 MPa, an shirya SiC mai yawan tsarki tare da yawan dangi >99.5% da kuma ragowar abun ciki na B na 556 ppm kawai. Hotunan SEM sun nuna cewa, idan aka kwatanta da samfuran da ba su da matsi, samfuran da aka matse da zafi suna da ƙananan hatsi, ƙananan ramuka, da kuma yawan yawa mafi girma. Ƙarfin lanƙwasa shine 453.7 ± 44.9 MPa, kuma modulus masu laushi sun kai 444.3 ± 1.1 GPa.
Ta hanyar tsawaita lokacin riƙewa a 1900°C, girman hatsi ya karu daga 1.5 μm zuwa 1.8 μm, kuma ƙarfin wutar lantarki na thermal ya inganta daga 155 zuwa 167 W·m⁻¹·K⁻¹, yayin da kuma ke ƙara juriya ga tsatsa a cikin jini.
A ƙarƙashin yanayin zafi na 1850°C da 30 MPa, matsi mai zafi da kuma saurin matsi mai zafi na foda SiC da aka yi wa granulated da annealed sun samar da cikakken kauri na β-SiC ba tare da wani ƙari ba, tare da yawan 3.2 g/cm³ da zafin sintering 150–200°C ƙasa da tsarin gargajiya. Tukwanen sun nuna tauri na 2729 GPa, tauri na karyewa na 5.25–5.30 MPa·m^1/2, da kuma juriya mai kyau ga rarrafe (ƙimar rarrafe na 9.9 × 10⁻¹⁰ s⁻¹ da 3.8 × 10⁻⁹ s⁻¹ a 1400°C/1450°C da 100 MPa).
(A) Hoton SEM na saman da aka goge; (B) Hoton SEM na saman da aka goge; (C, D) Hoton BSD na saman da aka goge
A cikin binciken bugu na 3D don tukwanen piezoelectric, slurry na yumbu, a matsayin babban abin da ke tasiri ga tsari da aiki, ya zama babban abin da aka fi mayar da hankali a cikin gida da kuma na duniya. Nazarin da ake yi a yanzu ya nuna cewa sigogi kamar girman barbashi na foda, dankowar slurry, da abun ciki mai ƙarfi suna shafar ingancin tsari da halayen piezoelectric na samfurin ƙarshe.
Bincike ya gano cewa slurries na yumbu da aka shirya ta amfani da foda barium titanate mai girman micron-, submicron-, da nano-nano suna nuna bambance-bambance masu yawa a cikin tsarin stereolithography (misali, LCD-SLA). Yayin da girman barbashi ke raguwa, dankowar slurry yana ƙaruwa sosai, tare da foda mai girman nano yana samar da slurries tare da danko mai kaiwa biliyoyin mPa·s. Slurries masu girman micron suna da saurin wargazawa da barewa yayin bugawa, yayin da foda mai girman submicron da nano-nano suna nuna halayen samar da kwanciyar hankali. Bayan sintering mai zafi, samfuran yumbu da aka samu sun sami yawan 5.44 g/cm³, ma'aunin piezoelectric (d₃₃) na kimanin 200 pC/N, da ƙananan abubuwan asara, suna nuna kyawawan halayen amsawar lantarki.
Bugu da ƙari, a cikin hanyoyin micro-stereolithography, daidaita abun da ke cikin slurries na nau'in PZT (misali, 75 wt.%) ya samar da jikkunan da aka niƙa tare da yawan 7.35 g/cm³, wanda ya cimma daidaiton piezoelectric har zuwa 600 pC/N a ƙarƙashin filayen lantarki na poling. Bincike kan diyya na nakasassu na ƙananan sikelin ya inganta daidaiton tsari sosai, yana haɓaka daidaiton geometric har zuwa 80%.
Wani bincike kan tukwanen PMN-PT na piezoelectric ya nuna cewa abun da ke cikin tauri yana tasiri sosai ga tsarin yumbu da halayen lantarki. A kashi 80% na abun da ke cikin tauri, kayayyakin da ke cikin tauri suna bayyana cikin sauƙi a cikin tukwanen; yayin da abun da ke cikin tauri ya karu zuwa kashi 82% zuwa sama, kayayyakin da ke cikin tauri sun ɓace a hankali, kuma tsarin yumbu ya zama mafi tsabta, tare da ingantaccen aiki sosai. A kashi 82% na tukwanen, tukwanen sun nuna mafi kyawun kayan lantarki: madaidaitan piezoelectric na 730 pC/N, izinin dangi na 7226, da asarar dielectric na 0.07 kawai.
A taƙaice, girman barbashi, abun da ke cikinsa mai ƙarfi, da kuma halayen rheological na slurries na yumbu ba wai kawai suna shafar kwanciyar hankali da daidaiton tsarin bugawa ba, har ma suna ƙayyade yawan da amsawar piezoelectric na jikin da aka niƙa kai tsaye, wanda hakan ya sanya su manyan sigogi don cimma manyan ayyuka na yumbu na piezoelectric da aka buga ta hanyar 3D.
Babban tsari na buga samfuran BT/UV na LCD-SLA 3D
Kayayyakin yumbu na PMN-PT tare da abubuwan da ke ciki daban-daban masu ƙarfi
IV. Yin Sintering na Spark Plasma
Spark plasma sintering (SPS) wata fasaha ce ta zamani wadda ke amfani da matsin lamba na pulsed current da na inji a lokaci guda da ake amfani da su a kan foda don cimma saurin nisantar da abubuwa. A cikin wannan tsari, current yana dumama mold da foda kai tsaye, yana samar da zafi da plasma na Joule, wanda ke ba da damar yin sintering mai inganci cikin ɗan gajeren lokaci (yawanci cikin mintuna 10). Dumama mai sauri yana haɓaka yaɗuwar saman, yayin da fitar da walƙiya yana taimakawa wajen cire iskar gas da aka sha da yadudduka na oxide daga saman foda, yana inganta aikin sintering. Tasirin ƙaura ta lantarki da filayen lantarki ke haifarwa kuma yana ƙara haɓaka yaɗuwar atomic.
Idan aka kwatanta da na gargajiya na matsewa mai zafi, SPS tana amfani da ƙarin dumama kai tsaye, wanda ke ba da damar yin yawa a ƙananan yanayin zafi yayin da yake hana haɓakar hatsi don samun ƙananan tsari iri ɗaya. Misali:
- Ba tare da ƙarin ƙari ba, amfani da foda SiC da aka niƙa a matsayin kayan da aka yi amfani da su, yin siminti a 2100°C da 70 MPa na tsawon mintuna 30 ya samar da samfuran da ke da yawan 98%.
- Ana yin sintiri a zafin 1700°C da 40 MPa na tsawon mintuna 10 ana samar da cubic SiC mai yawan kashi 98% da girman hatsi na 30-50 nm kawai.
- Amfani da foda SiC mai girman µm da kuma sintering a zafin 1860°C da 50 MPa na tsawon mintuna 5 ya haifar da yumbun SiC mai inganci tare da yawan 98.5% na dangi, ƙarfin Vickers na 28.5 GPa, ƙarfin lanƙwasa na 395 MPa, da kuma ƙarfin karyewar ƙarfe na 4.5 MPa·m^1/2.
Binciken ƙananan abubuwa ya nuna cewa yayin da zafin sintering ya ƙaru daga 1600°C zuwa 1860°C, ramukan abu sun ragu sosai, suna kusantowa cikakken yawa a yanayin zafi mai yawa.
Tsarin ƙaramin tsarin tukwane na SiC da aka tace a yanayin zafi daban-daban: (A) 1600°C, (B) 1700°C, (C) 1790°C da (D) 1860°C
V. Masana'antar Ƙari
Masana'antar ƙari (AM) kwanan nan ta nuna babban ƙarfin ƙera sassan yumbu masu rikitarwa saboda tsarin ginin sa na layi-layi. Ga yumburan SiC, an haɓaka fasahohin AM da yawa, ciki har da jetting na binder (BJ), 3DP, sintering na laser selective (SLS), rubutun tawada kai tsaye (DIW), da stereolithography (SL, DLP). Duk da haka, 3DP da DIW suna da ƙarancin daidaito, yayin da SLS ke haifar da damuwa da fashewa. Akasin haka, BJ da SL suna ba da fa'idodi mafi girma wajen samar da yumbu masu rikitarwa masu tsabta da inganci.
- Jetting na Binder (BJ)
Fasahar BJ ta ƙunshi fesawa mai ɗaurewa zuwa foda mai ɗaurewa, sannan a cire shi da kuma yin sintering don samun samfurin yumbu na ƙarshe. Haɗa BJ da shigar tururin sinadarai (CVI), an shirya tukwane na SiC mai tsabta da cikakken kristal cikin nasara. Tsarin ya haɗa da:
① Samar da jikin kore na SiC na yumbu ta amfani da BJ.
② Ƙarfin narkewa ta hanyar CVI a 1000°C da 200 Torr.
③ Yumbu na ƙarshe na SiC yana da yawa na 2.95 g/cm³, ƙarfin wutar lantarki na 37 W/m·K, da ƙarfin lanƙwasa na 297 MPa.
Tsarin zane na buga manne jet (BJ). (A) Tsarin zane mai taimakon kwamfuta (CAD), (B) tsarin zane na ƙa'idar BJ, (C) buga SiC ta BJ, (D) yawan SiC ta hanyar shigar tururin sinadarai (CVI)
- Stereolithography (SL)
SL wata fasaha ce ta ƙirƙirar yumbu mai tushen UV wadda ke da matuƙar daidaito da kuma ƙarfin ƙera tsari mai sarkakiya. Wannan hanyar tana amfani da slurries na yumbu masu ɗaukar hoto tare da babban abun ciki mai ƙarfi da ƙarancin ɗanko don samar da jikin kore na yumbu na 3D ta hanyar amfani da hasken rana, sannan sai a cire su da kuma yin amfani da sintering mai zafi don samun samfurin ƙarshe.
An yi amfani da sinadarin SiC mai ƙarfin vol.% 35, an shirya ƙwayoyin kore masu inganci na 3D a ƙarƙashin hasken UV na 405 nm kuma an ƙara yawansu ta hanyar ƙonewar polymer a 800°C da maganin PIP. Sakamakon ya nuna cewa samfuran da aka shirya da sinadarin slurry mai ƙarfin vol.% 35 sun sami yawansu na 84.8%, suna yin aiki fiye da ƙungiyoyin sarrafawa na 30% da 40%.
Ta hanyar gabatar da SiO₂ mai lipophilic da phenolic epoxy resin (PEA) don gyara slurry, an inganta aikin photopolymerization yadda ya kamata. Bayan an yi niƙa a 1600°C na tsawon awanni 4, an cimma kusan cikakkiyar juyawa zuwa SiC, tare da matakin oxygen na ƙarshe na 0.12% kawai, wanda ke ba da damar ƙera yumbu mai tsari mai ƙarfi na SiC mai tsari mai rikitarwa ba tare da matakan oxidation ko matakan shigar da ruwa ba.
Zane na tsarin bugawa da tsarin sintering ɗinsa. Bayyanar samfurin bayan bushewa a (A) 25°C, pyrolysis a (B) 1000°C, da sintering a (C) 1600°C.
Ta hanyar tsara simintin simintin simintin simintin simintin simintin simintin sitiriyo don buga 3D na stereolithography da amfani da hanyoyin tsufa na debinding-presintering da kuma yawan zafin jiki mai yawa, an shirya tukwane na Si₃N₄ masu yawan ka'ida 93.3%, ƙarfin tauri na 279.8 MPa, da ƙarfin lankwasawa na 308.5–333.2 MPa. Bincike ya gano cewa a ƙarƙashin yanayin abun ciki mai ƙarfi na vol. 45% da lokacin fallasa na daƙiƙa 10, za a iya samun jikin kore mai layi ɗaya tare da daidaiton matsewa matakin IT77. Tsarin cire simintin simintin simintin simintin sitiriyo mai ƙarancin zafi tare da ƙimar dumama na 0.1 °C/min ya taimaka wajen samar da jikin kore mara fashewa.
Sintering muhimmin mataki ne da ke shafar aikin ƙarshe a cikin stereolithography. Bincike ya nuna cewa ƙara kayan taimakon sintering zai iya inganta yawan yumbu da halayen injiniya yadda ya kamata. Ta amfani da CeO₂ a matsayin taimakon sintering da fasahar sintering mai taimako ta lantarki don shirya tukwane Si₃N₄ masu yawa, an gano cewa CeO₂ yana raba kan iyakokin hatsi, yana haɓaka zamewar iyakar hatsi da yawa. Tukwanen da aka samu sun nuna taurin Vickers na HV10/10 (1347.9 ± 2.4) da taurin karyewa na (6.57 ± 0.07) MPa·m¹/². Tare da MgO–Y₂O₃ a matsayin ƙari, an inganta daidaiton tsarin yumbu, wanda ke haɓaka aiki sosai. A jimillar matakin doping na 8 wt.%, ƙarfin lankwasawa da ƙarfin thermal sun kai 915.54 MPa da 59.58 W·m⁻¹·K⁻¹, bi da bi.
VI. Kammalawa
A taƙaice, yumbu mai ƙarfi da silicon carbide (SiC), a matsayin wani abin da ya shahara a fannin yumbu na injiniya, ya nuna fa'idodi da dama na amfani a cikin semiconductors, sararin samaniya, da kayan aiki masu matuƙar yanayi. Wannan takarda ta yi nazari kan hanyoyi guda biyar na shiri na musamman don yumbu na SiC mai ƙarfi—sake yin siminti, simintin da ba shi da matsi, matsewa mai zafi, simintin plasma mai walƙiya, da ƙera ƙari—tare da cikakken bayani kan hanyoyin da suka fi yawa, inganta sigogi masu mahimmanci, aikin kayan, da fa'idodi da ƙuntatawa.
A bayyane yake cewa hanyoyi daban-daban kowannensu yana da halaye na musamman dangane da cimma babban tsarki, yawan aiki, tsarin abubuwa masu rikitarwa, da yuwuwar masana'antu. Fasahar kera kayayyaki ta ƙari, musamman, ta nuna ƙarfin iko wajen ƙera kayan aiki masu siffa mai rikitarwa da na musamman, tare da ci gaba a cikin ƙananan fannoni kamar stereolithography da binder jetting, wanda hakan ya sanya shi muhimmin alkiblar ci gaba don shirya yumbu na SiC mai tsabta.
Binciken da za a yi nan gaba kan shirye-shiryen yumbu na SiC mai tsafta yana buƙatar zurfafa bincike, yana haɓaka sauyawa daga sikelin dakin gwaje-gwaje zuwa manyan aikace-aikacen injiniya masu inganci, don haka yana ba da tallafin kayan aiki mai mahimmanci ga kera kayan aiki masu inganci da fasahar bayanai ta zamani.
XKH kamfani ne mai fasaha mai zurfi wanda ya ƙware a bincike da samar da kayan yumbu masu aiki sosai. An sadaukar da shi don samar da mafita na musamman ga abokan ciniki a cikin nau'in yumbu mai silicon carbide (SiC) mai tsarki. Kamfanin yana da fasahar shirya kayan aiki na zamani da ƙwarewar sarrafawa daidai. Kasuwancinsa ya ƙunshi bincike, samarwa, sarrafawa daidai, da kuma kula da saman yumbu mai tsarki na SiC, biyan buƙatun semiconductor, sabon makamashi, sararin samaniya da sauran fannoni don abubuwan da ke cikin yumbu masu aiki sosai. Ta hanyar amfani da hanyoyin sintering masu girma da fasahar kera ƙari, za mu iya ba wa abokan ciniki sabis na tsayawa ɗaya daga inganta tsarin kayan aiki, ƙirƙirar tsari mai rikitarwa zuwa ingantaccen sarrafawa, tabbatar da cewa samfuran suna da kyawawan halayen injiniya, kwanciyar hankali na zafi da juriya ga tsatsa.
Lokacin Saƙo: Yuli-30-2025